Product Folder Sample & Buy Support & Community Tools & Software Technical Documents DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 DRV8881 2.5-A Dual H-Bridge Motor Driver 1 Features 2 Applications • • • • • • 1 • • • • • • • • • • Dual H-Bridge Motor Driver – Bipolar Stepper Motor Driver – Single or Dual Brushed-DC Motor Driver 6.5- to 45-V Operating Supply Voltage Range Two Control Interface Options – PHASE/ENABLE (DRV8881E) – PWM (DRV8881P) Multiple Decay Modes to Support Any Motor – AutoTune™ (DRV8881E Only) – Mixed Decay – Slow Decay – Fast Decay Adaptive Blanking Time for Smooth Motion Parallel Mode Operation (DRV8881P Only) Configurable Off-Time PWM Chopping – 10, 20, or 30 μs Off-Time 3.3-V, 10-mA LDO Regulator Low-Current Sleep Mode (28 µA) Small Package and Footprint – 28 HTSSOP (PowerPAD) – 28 WQFN (PowerPAD) SPACE Protection Features – VM Undervoltage Lockout (UVLO) – Charge Pump Undervoltage (CPUV) – Overcurrent Protection (OCP) – Automatic OCP Retry – Thermal Shutdown (TSD) – Fault Condition Indication Pin (nFAULT) Automatic Teller and Money Handling Machines Video Security Cameras Multi-Function Printers and Document Scanners Factory Automation and Robotics Stage Lighting Equipment 3 Description The DRV8881 is a bipolar stepper or brushed-DC motor driver for industrial applications. The device output stage consists of two N-channel power MOSFET H-bridge drivers. The DRV8881 is capable of driving up to 2.5-A peak current or 1.4-A rms current per H-bridge (with proper PCB ground plane for thermal dissipation and at 24 V and TA = 25°C). AutoTune™ automatically tunes motors for optimal current regulation performance and compensates for motor variation and aging effects. AutoTune is available on the DRV8881E. Additionally, slow, fast, and mixed decay modes are available. The PH/EN (DRV8881E) or PWM (DRV8881P) pins provide a simple control interface. An internal sense amplifier allows for adjustable current control. A lowpower sleep mode is provided for very-low quiescent current standby using a dedicated nSLEEP pin. Internal protection functions are provided for undervoltage, charge pump faults, overcurrent, shortcircuits, and overtemperature. Fault conditions are indicated by a nFAULT pin. Device Information(1) PART NUMBER DRV8881 PACKAGE BODY SIZE (NOM) HTSSOP (28) 9.70 mm × 6.40 mm WQFN (28) 5.50 mm × 3.50 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. DRV8881E Simplified System Diagram DRV8881P Simplified System Diagram 6.5 to 45 V 6.5 to 45 V + 2.5 A µ}dµv¡ - Controller Dual H-Bridge Motor Driver 2.5 A BIN1/BIN2 Current scalar Decay mode Dual H-Bridge Motor Driver + 2.5 A BDC BDC STEPPER BDC BDC - Decay mode STEPPER BDC BDC DRV8881P + 2.5 A BPH/BEN Current scalar AIN1/AIN2 - Controller DRV8881E + APH/AEN - BDC BDC Parallel Mode 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 5 6.1 6.2 6.3 6.4 6.5 6.6 5 5 6 6 7 9 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 Overview ................................................................. 11 7.2 Functional Block Diagrams ..................................... 12 7.3 Feature Description................................................. 14 7.4 Device Functional Modes........................................ 26 8 Application and Implementation ........................ 27 8.1 Application Information............................................ 27 8.2 Typical Applications ................................................ 27 9 Power Supply Recommendations...................... 33 9.1 Bulk Capacitance Sizing ......................................... 33 10 Layout................................................................... 34 10.1 Layout Guidelines ................................................. 34 10.2 Layout Example .................................................... 34 11 Device and Documentation Support ................. 35 11.1 11.2 11.3 11.4 11.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 35 35 35 35 35 12 Mechanical, Packaging, and Orderable Information ........................................................... 35 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (June 2015) to Revision A Page • Updated device status to production data ............................................................................................................................. 1 • Updated from "PowerPAD" to "thermal pad" ......................................................................................................................... 4 • Corrected ATE pin number for RHR package to 23............................................................................................................... 4 2 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 5 Pin Configuration and Functions PWP Package 28-Pin HTSSOP Top View DRV8881E 19 18 12 17 13 16 14 15 25 5 6 7 8 9 10 11 24 23 22 21 20 19 18 12 17 13 16 14 15 25 26 Thermal Pad - GND 20 19 18 17 9 16 10 15 RHR Package 28-Pin WQFN Top View DRV8881P GND TRQ0 TRQ1 PARA AIN1 AIN2 BIN1 BIN2 ADECAY BDECAY nFAULT nSLEEP TOFF V3P3 CPH CPL GND TRQ0 26 4 8 28 3 7 VCP VM AOUT1 AISEN AOUT2 BOUT2 BISEN BOUT1 VM GND 1 24 2 23 3 22 4 5 6 7 8 21 20 19 18 17 9 16 10 15 11 27 6 21 TRQ1 PARA AIN1 AIN2 BIN1 BIN2 ADECAY BDECAY nFAULT nSLEEP AVREF BVREF V3P3 TOFF 28 2 Thermal Pad - GND 1 27 CPH CPL GND TRQ0 PWP Package 28-Pin HTSSOP Top View DRV8881P CPL CPH VCP VM AOUT1 AISEN AOUT2 BOUT2 BISEN BOUT1 VM GND AVREF BVREF 5 14 11 20 22 4 13 10 21 3 TRQ1 ATE APH AEN BPH BEN ADECAY BDECAY nFAULT nSLEEP 25 9 22 23 26 8 23 24 2 Thermal Pad - GND 7 24 1 14 6 VCP VM AOUT1 AISEN AOUT2 BOUT2 BISEN BOUT1 VM GND 13 5 28 25 12 26 4 11 3 GND TRQ0 TRQ1 ATE APH AEN BPH BEN ADECAY BDECAY nFAULT nSLEEP TOFF V3P3 AVREF BVREF V3P3 TOFF 27 27 28 2 12 1 Thermal Pad - GND CPL CPH VCP VM AOUT1 AISEN AOUT2 BOUT2 BISEN BOUT1 VM GND AVREF BVREF RHR Package 28-Pin WQFN Top View DRV8881E Pin Functions PIN NAME PWP RHR CPL 1 27 CPH 2 28 VCP 3 VM TYPE DESCRIPTION PWR Charge pump output Connect a VM rated, 0.1-µF ceramic capacitor between CPH and CPL 1 O Charge pump output Connect a 16-V, 0.47-µF ceramic capacitor to VM 4, 11 2, 9 PWR Power supply Connect to motor supply voltage; bypass to GND with two 0.1 µF (for each pin) plus one bulk capacitor rated for VM AOUT1 5 3 AOUT2 7 5 AISEN 6 4 BOUT2 8 6 BOUT1 10 8 BISEN 9 12, 28 GND H-bridge outputs, drives one winding of a stepper motor O Winding A output O Winding A sense O Winding B output 7 O Winding B sense Requires sense resistor to GND; value sets peak current in winding B 10, 26 PWR Device ground Must be connected to ground Requires sense resistor to GND; value sets peak current in winding A H-bridge outputs, drives one winding of a stepper motor Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 3 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com Pin Functions (continued) PIN NAME TYPE PWP RHR AVREF 13 11 BVREF 14 12 V3P3 15 13 — TOFF 16 14 nSLEEP 17 nFAULT I DESCRIPTION Reference voltage input Voltage on this pin sets the full scale chopping current in Hbridge A Voltage on this pin sets the full scale chopping current in Hbridge B Internal regulator Internal supply voltage; bypass to GND with a 6.3-V, 0.47-µF ceramic capacitor; up to 10-mA external load I Decay mode off time set Sets the off-time during current chopping; tri-level pin 15 I Sleep mode input Logic high to enable device; logic low to enter low-power sleep mode; internal pulldown 18 16 O Fault indication pin Pulled logic low with fault condition; open-drain output requires an external pullup BDECAY 19 17 ADECAY 20 18 TRQ1 26 24 TRQ0 27 25 PAD PAD PAD Set the decay mode for bridge B; see Decay Modes ; tri-level pin I Decay mode setting pins I Torque DAC current scalar Scales the current by 100%, 75%, 50%, or 25%; internal pulldown Thermal pad Must be connected to ground PWR Set the decay mode for bridge A; see Decay Modes ; tri-level pin DRV8881E PH/EN Pin Functions PIN NAME TYPE DESCRIPTION PWP RHR BEN 21 19 I Bridge B enable input Logic high enables bridge B; logic low disables the bridge Hi-Z BPH 22 20 I Bridge B phase input Logic high drives current from BOUT1 → BOUT2 AEN 23 21 I Bridge A enable input Logic high enables bridge A; logic low disables the bridge Hi-Z APH 24 22 I Bridge A phase input Logic high drives current from AOUT1 → AOUT2 AutoTune enable pin Logic high enables AutoTune operation; when logic low, the decay mode is set through the DECAYx pins; AutoTune must be pulled high prior to power-up or coming out of sleep, or else tied to V3P3 in order to enable AutoTune; internal pulldown; see AutoTune ATE 25 23 I DRV8881P PWM Pin Functions PIN NAME PWP RHR BIN2 21 19 BIN1 22 20 AIN2 23 21 AIN1 24 22 PARA 25 23 4 TYPE DESCRIPTION I Bridge B PWM input Logic controls the state of H-bridge B; internal pulldown I Bridge A PWM input Logic controls the state of H-bridge A; internal pulldown I Parallel mode input Logic high enables parallel mode Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 External Components COMPONENT PIN 1 PIN 2 CVM1 VM GND 0.1-µF ceramic capacitor rated for VM per VM pin CVM1 VM GND Bulk electrolytic capacitor rated for VM, recommended value is 100 µF, see Bulk Capacitance Sizing CVCP VCP VM 16 V, 0.47 µF ceramic capacitor CSW CPH CPL 0.1-µF X7R capacitor rated for VM CV3P3 V3P3 GND 6.3 V, 0.47-µF ceramic capacitor RnFAULT (1) RECOMMENDED VMCU (1) nFAULT RAISEN AISEN GND RBISEN BISEN GND > 5 kΩ Optional sense resistor, see Sense Resistor VMCU is not a pin on the DRV8881, but a supply voltage pullup is required for open-drain output nFAULT; nFAULT may be pulled up to V3P3 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range referenced with respect to GND (unless otherwise noted) Power supply voltage (VM) Power supply voltage ramp rate (VM) (1) MIN MAX UNIT –0.3 50 V 0 2 V/µs Charge pump voltage (VCP, CPH) –0.3 VM + 12 V Charge pump negative switching pin (CPL) –0.3 VM V Internal regulator voltage (V3P3) –0.3 3.8 V 0 10 mA –0.3 7.0 V Internal regulator current output (V3P3) Control pin voltage (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT, ADECAY, BDECAY, TRQ0, TRQ1, ATE, PARA) Open drain output current (nFAULT) 0 10 mA Reference input pin voltage (AVREF, BVREF) –0.3 V3P3 + 0.5 V Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –0.7 VM + 0.7 V –0.55 0.55 V Continuous shunt amplifier input pin voltage (AISEN, BISEN) (2) Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2, AISEN, BISEN) Internally limited A Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Transients of ±1 V for less than 25 ns are acceptable 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) UNIT ±4000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 5 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VM Power supply voltage range VIN Digital pin voltage range VREF Reference rms voltage range (AVREF, BVREF) ƒPWM MAX UNIT 6.5 45 V 0 5.3 V (1) V3P3 Applied PWM signal (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2) 0 100 kHz IV3P3 V3P3 external load current 0 (2) mA Irms Motor rms current per H-bridge 0 1.4 A TA Operating ambient temperature –40 125 °C (1) (2) 0.3 10 V Operational at VREF ≈ 0 to 0.3 V, but accuracy is degraded Power dissipation and thermal limits must be observed 6.4 Thermal Information DRV8881 THERMAL METRIC (1) PWP (HTSSOP) RHR (WQFN) 28 PINS 28 PINS UNIT RθJA Junction-to-ambient thermal resistance 33.1 37.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 16.6 23.0 °C/W RθJB Junction-to-board thermal resistance 14.4 8.0 °C/W ψJT Junction-to-top characterization parameter 0.4 0.2 °C/W ψJB Junction-to-board characterization parameter 14.2 7.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.3 1.7 °C/W (1) 6 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (VM, V3P3) VM VM operating voltage IVM VM operating supply current IVMQ VM sleep mode supply current 6.5 nSLEEP high; ENABLE high; no motor load; VM = 24 V 8 nSLEEP low; VM = 24 V; TA = 25°C 45 V 18 mA 28 nSLEEP low; VM = 24 V; TA = 125°C 77 (1) μA tSLEEP Sleep time nSLEEP low to sleep mode 100 μs tWAKE Wake-up time nSLEEP high to output transition 1.5 ms tON Turn-on time VM > VUVLO to output transition 1.5 ms V3P3 Internal regulator voltage External load 0 to 10 mA 3.6 V 2.9 3.3 CHARGE PUMP (VCP, CPH, CPL) VCP VCP operating voltage ƒVCP (1) Charge pump switching frequency VM > 12 V VM + 11.5 VUVLO < VM < 12 V V 2×VM – 1.5 VM > VUVLO 175 715 kHz 0 0.6 V 5.3 LOGIC-LEVEL INPUTS (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP, TRQ0, TRQ1, PARA) VIL Input logic low voltage VIH Input logic high voltage 1.6 VHYS Input logic hysteresis 100 IIL Input logic low current VIN = 0 V IIH Input logic high current VIN = 5.0 V RPD Pulldown resistance Measured between the pin and GND 100 kΩ tPD Propagation delay xPH, xEN, xINx input to current change 450 ns V mV –1 1 50 100 μA μA TRI-LEVEL INPUTS (ADECAY, BDECAY, TOFF) VIL Tri-level input logic low voltage VIZ Tri-level input Hi-Z voltage 0 0.6 VIH Tri-level input logic high voltage 1.6 VHYS Tri-level input hysteresis 100 IIL Tri-level input logic low current VIN = 0 V IIZ Tri-level input Hi-Z current VIN = 1.3 V 15 IIH Tri-level input logic high current VIN = 3.3 V 85 μA RPD Tri-level pulldown resistance Measured between the pin and GND 40 kΩ RPU Tri-level pullup resistance Measured between V3P3 and the pin 45 kΩ 1.1 V V 5.3 V mV –55 –35 μA μA CONTROL OUTPUTS (nFAULT) VOL Output logic low voltage IO = 4 mA IOH Output logic high leakage External pullup resistor to 3.3 V –1 0.5 V 1 μA MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) VM = 24 V, I = 1 A, TA = 25°C RDS(ON) High-side FET on resistance VM = 24 V, I = 1 A, TA = 125°C 330 (1) VM = 6.5 V, I = 1 A, TA = 25°C VM = 6.5 V, I = 1 A, TA = 125°C Low-side FET on resistance VM = 24 V, I = 1 A, TA = 125°C (1) (1) 500 mΩ 560 300 (1) VM = 6.5 V, I = 1 A, TA = 25°C VM = 6.5 V, I = 1 A, TA = 125°C 440 430 VM = 24 V, I = 1 A, TA = 25°C RDS(ON) 400 370 400 370 (1) 450 mΩ 490 Specified by design and characterization data Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 7 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tRISE Output rise time VM = 24 V, 50 Ω load from xOUTx to GND 70 ns tFALL Output fall time VM = 24 V, 50 Ω load from VM to xOUTx 70 ns tDEAD Output dead time Vd Body diode forward voltage (2) 200 IOUT = 0.5 A 0.7 ns 1 V PWM CURRENT CONTROL (VREF, AISEN, BISEN) xISENSE trip voltage, full scale current step VTRIP TRQ at 100%, VREF = 3.3 V 500 TRQ at 75%, VREF = 3.3 V 375 TRQ at 50%, VREF = 3.3 V 250 TRQ at 25%, VREF = 3.3 V AV Amplifier attenuation tOFF PWM off-time mV 125 Torque = 100% (TRQ0 = 0, TRQ1 = 0) 6.25 6.58 6.91 Torque = 75% (TRQ0 = 1, TRQ1 = 0) 6.2 6.56 6.92 Torque = 50% (TRQ0 = 0, TRQ1 = 1) 6.09 6.51 6.94 Torque = 25% (TRQ0 = 1, TRQ1 = 1) 5.83 6.38 6.93 TOFF logic low 20 TOFF logic high 30 TOFF Hi-Z V/V μs 10 1.8 tBLANK PWM blanking time 1.5 See Table 6 for details µs 1.2 0.9 PROTECTION CIRCUITS VUVLO VM undervoltage lockout VUVLO,HYS Undervoltage hysteresis VM falling; UVLO report 5.8 6.4 VM rising; UVLO recovery 6.1 6.5 Rising to falling threshold 100 V mV VCP falling; CPUV report VM + 1.8 VCP rising; CPUV recovery VM + 1.9 VCPUV Charge pump undervoltage VCPUV,HYS CP undervoltage hysteresis Rising to falling threshold 50 IOCP Overcurrent protection trip level Current through any FET 2.5 3.6 VOCP Sense pin overcurrent trip level Voltage at AISEN or BISEN 0.9 1.25 V tOCP Overcurrent deglitch time 2 μs tRETRY Overcurrent retry time (2) Thermal shutdown temperature Die temperature TJ THYS (2) Thermal shutdown hysteresis Die temperature TJ (2) 8 mV 0.5 TTSD V A 2 150 ms °C 35 °C Specified by design and characterization data Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 6.6 Typical Characteristics 6.35 6.5 6.45 6.4 6.35 6.3 6.25 6.2 6.15 6.1 6.05 6 5.95 5.9 5.85 5.8 6.3 6.25 Supply Current IVM (mA) Supply Current IVM (mA) Over recommended operating conditions (unless otherwise noted) TA = +125°C TA = +85°C TA = +25°C TA = -40°C 5 10 15 20 25 30 Supply Voltage VM (V) 35 40 6.2 6.15 6.1 6.05 6 5.95 5.9 5.85 5.75 -40 45 Figure 1. Supply Current over VM 26 25 Sleep Current IVMQ (PA) Sleep Current IVMQ (PA) 24 22 20 18 16 14 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 8 9 12 15 18 21 24 27 Supply Voltage VM (V) 30 120 140 D002 33 24 23.5 23 22.5 22 21 -40 36 VM = 24 V VM = 12 V -20 0 D003 Figure 3. Sleep Current over VM 20 40 60 80 100 Ambient Temperature T A (qC) 120 140 D004 Figure 4. Sleep Current over Temperature 550 700 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 600 500 High-Side RDS(ON) (m:) 650 High-Side RDS(ON) (m:) 20 40 60 80 100 Ambient Temperature T A (qC) 24.5 21.5 6 6 0 Figure 2. Supply Current over Temperature 25.5 10 -20 D001 28 12 VM = 24 V VM = 12 V 5.8 550 500 450 400 350 450 400 350 300 300 250 250 200 5 10 15 20 25 30 35 Supply Voltage VM (V) 40 45 50 200 -40 D005 Figure 5. High-Side RDS(ON) over VM -20 0 20 40 60 80 100 Ambient Temperature T A (qC) 120 140 D006 Figure 6. High-Side RDS(ON) over Temperature (VM = 12 V) Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 9 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com Typical Characteristics (continued) Over recommended operating conditions (unless otherwise noted) 600 480 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 500 450 Low-Side RDS(ON) (m:) Low-Side RDS(ON) (m:) 550 450 400 350 300 250 5 10 15 20 25 30 35 Supply Voltage VM (V) 40 45 360 330 300 270 210 -40 50 -20 0 D007 Figure 7. Low-Side RDS(ON) over VM 20 40 60 80 100 Ambient Temperature T A (qC) 120 140 D008 Figure 8. Low-Side RDS(ON) over Temperature (VM = 12 V) 3.36 0.5 TRQ = 00 TRQ = 01 TRQ = 10 TRQ = 11 0.45 0.4 3.355 3.35 0.35 V3P3 Voltage (V) xISEN Full-Scale Trip Voltage (V) 390 240 200 0.3 0.25 0.2 0.15 3.345 3.34 3.335 3.33 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 0.1 3.325 0.05 3.32 0 0 0.5 1 1.5 2 2.5 VREF Pin Voltage (V) 3 3.5 0 D009 Figure 9. xISEN Trip Voltage over VREF Input 10 420 1 2 3 4 5 6 V3P3 Load (mA) 7 8 9 10 D010 Figure 10. V3P3 Regulator over Load (VM = 24 V) Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 7 Detailed Description 7.1 Overview The DRV8881 is an integrated motor driver solution for bipolar stepper motors or single/dual brushed-DC motors. The device integrates two NMOS H-bridges and current regulation circuitry. The DRV8881 can be powered with a supply voltage between 6.5 and 45 V, and is capable of providing an output current up to 2.5 A peak or 1.4 A rms per H-bridge. Actual operable rms current will depend on ambient temperature, supply voltage, and PCB ground plane size. A simple PH/EN (DRV8881E) or PWM (DRV8881P) interface allows easy interfacing to the controller circuit. The current regulation is highly configurable, with several decay modes of operation. The decay mode can be selected as a fixed slow, mixed, or fast decay. In addition, an AutoTune mode can be used which automatically adjusts the decay setting to minimize current ripple while still reacting quickly to step changes. This feature greatly simplifies stepper driver integration into a motor drive system. AutoTune is only available on the DRV8881E. The PWM off-time, tOFF, can be adjusted to 10, 20, or 30 μs. An adaptive blanking time feature automatically scales the minimum drive time with output current. This helps alleviate current waveform distortion by limiting the drive time at low-currents. A torque DAC feature allows the controller to scale the output current without needing to scale the analog reference voltage inputs AVREF and BVREF. The torque DAC is accessed using digital input pins. This allows the controller to save power by decreasing the current consumption when not required. In the DRV8881P, a parallel mode allows the user to parallel the two H-bridge outputs in order to double the current capacity. A low-power sleep mode is included which allows the system to save power when not driving the motor. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 11 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.2 Functional Block Diagrams VM 0.1 µF VM VM 0.1 µF + bulk VM 0.47 µF VM Power VCP AutoTune AOUT1 CPH 0.1 µF 10 mA Charge Pump OffGate time Drive PWM CPL + BDC AOUT2 V3P3 Step Motor VM - 3.3-V LDO 0.47 µF + APH AISEN + Core Logic AEN - TRQ[1:0] RSENSE BPH AVREF BEN - 1/Av nSLEEP Control Inputs ATE VM TRQ[1:0] V3P3 ADECAY BOUT1 V3P3 BDECAY OffGate time Drive PWM V3P3 TOFF AVREF Analog Inputs BVREF VM BDC BOUT2 Protection Overcurrent + Output nFAULT Undervoltage Thermal GND TRQ[1:0] BVREF BISEN RSENSE 1/Av GND PPAD Figure 11. DRV8881E Block Diagram 12 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 Functional Block Diagrams (continued) VM 0.1 µF VM VM 0.1 µF + bulk VM 0.47 µF VM Power VCP Parallel Mode AOUT1 CPH 0.1 µF 10 mA Charge Pump OffGate time Drive PWM CPL + BDC AOUT2 V3P3 Step Motor VM - 3.3-V LDO 0.47 µF + AIN1 AISEN + Core Logic AIN2 - TRQ[1:0] RSENSE BIN1 AVREF BIN2 - 1/Av nSLEEP Control Inputs PARA VM TRQ[1:0] V3P3 ADECAY BOUT1 V3P3 BDECAY OffGate time Drive PWM V3P3 TOFF AVREF Analog Inputs BVREF VM BDC BOUT2 Protection Overcurrent + Output nFAULT Undervoltage Thermal GND TRQ[1:0] BVREF BISEN RSENSE 1/Av GND PPAD Figure 12. DRV8881P Block Diagram Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 13 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.3 Feature Description 7.3.1 Motor Driver Current Ratings Brushed motor drivers can be classified using two different numbers to describe the output current: peak and rms. Stepper motor drivers can be described with three numbers: peak, rms, and full-scale. 7.3.1.1 Peak Current Rating The peak current in a motor driver is limited by the overcurrent protection trip threshold IOCP. The peak current describes any transient duration current pulse, for example when charging capacitance, when the overall duty cycle is very low. In general the minimum value of IOCP specifies the peak current rating of the motor driver. For the DRV8881, the peak current rating is 2.5 A per bridge. 7.3.1.2 RMS Current Rating The rms (average) current is determined by the thermal considerations of the IC. The rms current is calculated based on the RDS(ON), rise and fall time, PWM frequency, device quiescent current, and package thermal performance in a typical system at 25°C. The real operating rms current may be higher or lower depending on heatsinking and ambient temperature. For the DRV8881, the rms current rating is 1.4 A per bridge. In parallel mode, the DRV8881P is capable of double the rms output current, or 2.8 A. 7.3.1.3 Full-Scale Current Rating The full-scale current for a stepper motor describes the top of the sinusoid current waveform while stepping. Since the sineusoid amplitude is related to the rms current, the full-scale current is also determined by the thermal considerations of the IC. The full-scale current rating is approximately √2 × Irms. The full-scale current is set by xVREF, the sense resistor, and Torque DAC when configuring the DRV8881. For the DRV8881, the fullscale current rating is 2.0 A per bridge. full-scale current rms current Figure 13. Full-Scale and rms Current 14 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 Feature Description (continued) 7.3.2 PWM Motor Drivers The DRV8881 contains drivers for two full H-bridges. Figure 14 shows a block diagram of the circuitry. VM AOUT1 + PWM Logic Gate Drive VM Step Motor BDC Device Logic AOUT2 - AISEN + - TRQ[1:0] AVREF + RSENSE 1/Av Figure 14. PWM Motor Driver Block Diagram 7.3.3 Bridge Control The DRV8881E is controlled using a PH/EN interface. Table 1 gives the full H-bridge state. Note that this table does not take into account the current control built into the DRV8881E. Positive current is defined in the direction of xOUT1 → xOUT2. Table 1. DRV8881E (PH/EN) Control Interface nSLEEP ENx PHx xOUT1 xOUT2 V3P3 0 X X Hi-Z Hi-Z Disabled Sleep mode; H-bridge disabled Hi-Z DESCRIPTION 1 0 X Hi-Z Hi-Z Enabled H-bridge disabled Hi-Z 1 1 0 L H Enabled Reverse (current xOUT2 → xOUT1) 1 1 1 H L Enabled Forward (current xOUT1 → xOUT2) The DRV8881P is controlled using a PWM interface. Table 2 gives the full H-bridge state. Note that this table does not take into account the current control built into the DRV8881P. Positive current is defined in the direction of xOUT1 → xOUT2. Table 2. DRV8881P (PWM) Control Interface nSLEEP xIN1 xIN2 xOUT1 xOUT2 V3P3 DESCRIPTION 0 X X Hi-Z Hi-Z Disabled Sleep mode; H-bridge disabled Hi-Z 1 0 0 Hi-Z Hi-Z Enabled Coast; H-bridge disabled Hi-Z 1 0 1 L H Enabled Reverse (current xOUT2 → xOUT1) 1 1 0 H L Enabled Forward (current xOUT1 → xOUT2) 1 1 1 L L Enabled Brake; low-side slow decay Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 15 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.3.4 Current Regulation The current through the motor windings is regulated by an adjustable fixed-off-time PWM current regulation circuit. When an H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage, inductance of the winding, and the magnitude of the back EMF present. Once the current hits the current chopping threshold, the bridge enters a decay mode for a fixed period of time to decrease the current, which is configurable between 10 and 30 µs through the tri-level input TOFF. After the off time expires, the bridge is reenabled, starting another PWM cycle. Table 3. Off-Time Settings TOFF OFF-TIME tOFF 0 20 µs 1 30 µs Z 10 µs The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the xISEN pin with a reference voltage. To generate the reference voltage for the current chopping comparator, the xVREF input is attenuated by a factor of Av. In addition, the TRQx pins further scale the reference. VM AOUT1 + PWM Logic Gate Drive VM Step Motor BDC Device Logic AOUT2 + - AISEN - TRQ[1:0] AVREF + RSENSE 1/Av Figure 15. Current Regulation Block Diagram The chopping current is calculated as follows: I T R IP ( A ) V R E F ( V ) u T R Q (% ) A v u R SENSE (: ) V R E F ( V ) u T R Q (% ) 6 .6 u R S E N S E ( : ) (1) TRQ is a DAC used to scale the output current. The current scalar value for different inputs is shown in Table 4. Table 4. Torque DAC Settings 16 TRQ1 TRQ0 CURRENT SCALAR (TRQ) EFFECTIVE ATTENUATION 1 1 25% 26.4 V/V 1 0 50% 13.2 V/V 0 1 75% 8.8 V/V 0 0 100% 6.6 V/V Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 7.3.5 Decay Modes A fixed decay mode is selected by setting the tri-level ADECAY and BDECAY pins as shown in Table 5. Note that if the ATE pin is logic high, the ADECAY and BDECAY pins are ignored and AutoTune is used. Table 5. Decay Mode Settings xDECAY DECAY MODE 0 Slow decay Z Fast decay 1 Mixed decay: 30% fast The ADECAY pin sets the decay mode for H-bridge A (AOUT1, AOUT2), and the BDECAY pin sets the decay mode for H-bridge B (BOUT1, BOUT2). Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 17 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.3.5.1 Mode 1: Slow Decay Increasing Phase Current (A) To configure the DRV8881 into this mode, pull DECAY1 and DECAY0 logic low. ITRIP tBLANK Decreasing Phase Current (A) tDRIVE tBLANK tOFF tOFF tDRIVE ITRIP tBLANK tOFF tDRIVE tBLANK tDRIVE tOFF tBLANK tDRIVE Figure 16. Slow Decay Mode During slow decay, both of the low-side FETs of the H-bridge are turned on, allowing the current to be recirculated. Slow decay exhibits the least current ripple of the decay modes for a given tOFF. However, if the current trip level is decreasing, slow decay will take a long time to settle to the new ITRIP level because the current decreases very slowly. 18 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 7.3.5.2 Mode 2: Fast Decay Increasing Phase Current (A) To configure the DRV8881 into this mode, pull DECAY1 and DECAY0 logic high. ITRIP tBLANK tOFF tBLANK Decreasing Phase Current (A) tDRIVE tOFF tBLANK tDRIVE tDRIVE ITRIP tBLANK tOFF tDRIVE tBLANK tOFF tDRIVE tBLANK tOFF tDRIVE Figure 17. Fast Decay Mode During fast decay, the polarity of the H-bridge is reversed. The H-bridge will be turned off as current approaches zero in order to prevent current flow in the reverse direction. Fast decay exhibits the highest current ripple of the decay modes for a given tOFF. Transition time on decreasing current is much faster than slow decay since the current is allowed to decrease much faster. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 19 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.3.5.3 Mode 3: 30%/70% Mixed Decay To configure the DRV8881 into this mode, pull DECAY1 logic high and pull DECAY0 logic low. Increasing Phase Current (A) ITRIP tOFF tBLANK Decreasing Phase Current (A) tOFF tDRIVE tDRIVE tBLANK tDRIVE ITRIP tBLANK tDRIVE tFAST tBLANK tOFF tFAST tDRIVE tOFF Figure 18. Mixed Decay Mode (30% Fast, 70% Slow) Mixed decay begins as fast decay for 30% of tOFF, followed by slow decay for the remainder of tOFF. In this mode, mixed decay occurs for both increasing and decreasing current steps. This mode exhibits ripple larger than slow decay, but smaller than fast decay. Mixed decay will settle to the new ITRIP level faster than slow decay when dealing with decreasing current trip levels. In cases where current is held for a long time or at very-low stepping speeds, slow decay may not properly regulate current because no back-EMF is present across the motor windings. In this state, motor current can rise very quickly, and requires an excessively large off-time. Increasing/decreasing mixed decay mode allows the current level to stay in regulation when no back-EMF is present across the motor windings. 20 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 7.3.6 AutoTune AutoTune is available on DRV8881E only. To enable the AutoTune mode, pull the ATE pin logic high. Ensure the xDECAY pins are logic low. The AutoTune mode is registered internally when exiting from sleep mode or the power-up sequence. The ATE pin can be shorted to V3P3 to pull it logic high for this purpose. AutoTune greatly simplifies the decay mode selection by automatically configuring the decay mode between slow, mixed, and fast decay. In mixed decay, AutoTune dynamically adjusts the fast decay percentage of the total mixed decay time. This feature eliminates motor tuning by automatically determining the best decay setting that results in the lowest ripple for the motor. The decay mode setting is optimized iteratively each PWM cycle. If the motor current overshoots the target trip level, then the decay mode becomes more aggressive (add fast decay percentage) on the next cycle in order to prevent regulation loss. If there is a long drive time to reach the target trip level, the decay mode becomes less aggressive (remove fast decay percentage) on the next cycle in order to operate with less ripple and more efficiently. AutoTune will automatically adjust the decay scheme based on operating factors like: • Motor winding resistance and inductance • Motor aging effects • Motor dynamic speed and load • Motor supply voltage variation • Motor back-EMF difference on rising and falling steps • Low-current vs. high-current dI/dt 7.3.7 Adaptive Blanking Time After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a period of time before enabling the current sense circuitry. Note that the blanking time also sets the minimum drive time of the PWM. The time tBLANK is determined by VREF and the torque DAC setting. The timing information for tBLANK is given in Table 6. Table 6. Adaptive Blanking Time Settings over Torque DAC and xVREF Input Voltage xVREF TORQUE DAC TRQ[1:0] SETTING 00 - 100% 01 - 75% 10 - 50% 11 - 25% 2.475 → 3.300 V 1.80 µs 1.50 µs 1.20 µs 0.90 µs 1.650 → 2.475 V 1.50 µs 1.20 µs 0.90 µs 0.90 µs 0.825 → 1.650 V 1.20 µs 0.90 µs 0.90 µs 0.90 µs 0.000 → 0.825 V 0.90 µs 0.90 µs 0.90 µs 0.90 µs Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 21 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.3.8 Parallel Mode To enter parallel mode on the DRV8881P, the PARA pin must be logic high during device power-up or when exiting the sleep mode. The PARA pin can be shorted to V3P3 to pull it logic high for this purpose. In this mode, the AIN1 and AIN2 pins control the state of the outputs and the BIN1 and BIN2 pins are ignored. Similarly, the ADECAY pin controls the decay mode of the output and AVREF is used as the analog reference voltage. The BIN1, BIN2, BDECAY, and BVREF pins can be tied to GND or left Hi-Z. VM 0.1 µF VM VM 0.1 µF + bulk VM 0.47 µF VM Power VCP Parallel Mode AOUT1 CPH 0.1 µF 10 mA Charge Pump OffGate time Drive PWM CPL VM BDC AOUT2 V3P3 3.3-V LDO 0.47 µF AIN1 AISEN + Core Logic AIN2 - TRQ[1:0] BIN1 AVREF BIN2 1/Av nSLEEP Control Inputs PARA VM TRQ[1:0] V3P3 ADECAY BOUT1 V3P3 BDECAY OffGate time Drive PWM V3P3 TOFF AVREF Analog Inputs BVREF VM BOUT2 Protection Overcurrent BISEN Output nFAULT Undervoltage RSENSE Thermal GND GND PPAD Figure 19. Parallel Mode Diagram 22 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 7.3.9 Charge Pump A charge pump is integrated in order to supply a high-side NMOS gate drive voltage. The charge pump requires a capacitor between the VM and VCP pins. Additionally a low-ESR ceramic capacitor is required between pins CPH and CPL. VM 0.47 µF VCP VM CPH 0.1 µF VM CPL Charge Pump Figure 20. Charge Pump Diagram 7.3.10 LDO Voltage Regulator An LDO regulator is integrated into the DRV8881. It can be used to provide the supply voltage for a low-power microcontroller or other low-current devices. For proper operation, bypass V3P3 to GND using a ceramic capacitor. The V3P3 output is nominally 3.3 V. When the V3P3 LDO current load exceeds 10 mA, the LDO will behave like a constant current source. The output voltage will drop significantly with currents greater than 10 mA. VM + - 3.3 V V3P3 0.47 µF 10 mA max Figure 21. LDO Diagram If a digital input needs to be tied permanently high (that is, TOFF or ADECAY), it is preferable to tie the input to V3P3 instead of an external regulator. This will save power when VM is not applied or in sleep mode: V3P3 is disabled and current will not be flowing through the input pulldown resistors. For reference, logic level inputs have a typical pulldown of 100 kΩ, and tri-level inputs have a typical pulldown of 40 kΩ. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 23 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.3.11 Logic and Tri-Level Pin Diagrams Figure 22 gives the input structure for logic-level pins APH/AIN1, AEN/AIN2, BPH/BIN1, BEN/BIN2, nSLEEP, ATE/PARA, TRQ0, TRQ1: V3P3 100 k Figure 22. Logic-level Input Pin Diagram Tri-level logic pins TOFF, ADECAY, and BDECAY have the following structure as shown in Figure 23. V3P3 + V3P3 ± 45 k V3P3 40 k + ± Figure 23. Tri-Level Input Pin Diagram 24 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 7.3.12 Protection Circuits The DRV8881 is fully protected against VM undervoltage, charge pump undervoltage, overcurrent, and overtemperature events. 7.3.12.1 VM Undervoltage Lockout (UVLO) If at any time the voltage on the VM pin falls below the undervoltage lockout threshold voltage, all FETs in the Hbridge will be disabled, the charge pump will be disabled, and the nFAULT pin will be driven low. Operation will resume when VM rises above the UVLO threshold. The nFAULT pin will be released after operation has resumed. 7.3.12.2 VCP UVLO (CPUV) If at any time the voltage on the VCP pin falls below the undervoltage lockout threshold voltage, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. Operation will resume when VCP rises above the CPUV threshold. The nFAULT pin will be released after operation has resumed. 7.3.12.3 Overcurrent Protection (OCP) An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this analog current limit persists for longer than tOCP, all FETs in the H-bridge will be disabled and nFAULT will be driven low. In addition to this FET current limit, an overcurrent condition is also detected if the voltage at xISEN exceeds VOCP. For the DRV8881E (PH/EN), both H-bridges are shut down when either bridge encounters an overcurrent fault. For the DRV8881P (PWM), only the H-bridge driver experiencing the overcurrent fault is shut down, and the other bridge will remain active. The driver will be re-enabled after the OCP retry period (tRETRY) has passed. nFAULT becomes high again after the retry time. If the fault condition is still present, the cycle repeats. If the fault is no longer present, normal operation resumes and nFAULT remains deasserted. 7.3.12.4 Thermal Shutdown (TSD) If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. After the die temperature has fallen to a safe level, operation will automatically resume. The nFAULT pin will be released after operation has resumed. Table 7. Fault Condition Summary FAULT CONDITION ERROR REPORT H-BRIDGE CHARGE PUMP V3P3 RECOVERY VM undervoltage (UVLO) VM < VUVLO (max 6.4 V) nFAULT Disabled Disabled Operating VM > VUVLO (max 6.5 V) VCP < VCPUV (typ VM + 1.8 V) nFAULT Disabled Operating Operating VCP > VCPUV (typ VM + 1.9 V) TJ > TTSD (min 150°C) nFAULT Disabled Operating Operating TJ < TTSD- THYS (THYS typ 35°C) IOUT > IOCP (min 2.5 A) VxISEN > VOCP (min 0.9 V) nFAULT Disabled Operating Operating tRETRY VCP undervoltage (CPUV) Thermal shutdown (TSD) Overcurrent (OCP) Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 25 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 7.4 Device Functional Modes The DRV8881 is active unless the nSLEEP pin is brought logic low. In sleep mode the charge pump is disabled, the H-bridge FETs are disabled Hi-Z, and the V3P3 regulator is disabled. Note that tSLEEP must elapse after a falling edge on the nSLEEP pin before the device is in sleep mode. The DRV8881 is brought out of sleep mode automatically if nSLEEP is brought logic high. Note that tWAKE must elapse before the outputs change state after wake-up. Table 8. Functional Modes Summary FAULT H-BRIDGE CHARGE PUMP V3P3 Operating 6.5 V < VM < 45 V nSLEEP pin = 1 Operating Operating Operating Sleep mode 6.5 V < VM < 45 V nSLEEP pin = 0 Disabled Disabled Disabled VM undervoltage (UVLO) Disabled Disabled Operating VCP undervoltage (CPUV) Disabled Operating Operating Overcurrent (OCP) Disabled Operating Operating Thermal shutdown (TSD) Disabled Operating Operating Fault encountered 26 CONDITION Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The DRV8881 is used in stepper or brushed motor control. 8.2 Typical Applications 8.2.1 DRV8881P Typical Application The following design procedure can be used to configure the DRV8881. In this application, the DRV8881P will be used to drive a stepper motor. DRV8881PPWP 28 1 GND CPL TRQ0 CPH 27 26 VM 3 TRQ1 VCP 25 0.47 µF 4 PARA VM AIN1 AOUT1 AIN2 AISEN BIN1 AOUT2 BIN2 BOUT2 24 0.1 µF 5 250 m 6 7 21 Step Motor + 22 - 23 8 20 + ADECAY BISEN BDECAY BOUT1 nFAULT VM nSLEEP GND - 250 m 9 19 10 18 11 17 10 k 0.1 µF 2 VM 12 16 0.1 µF 13 TOFF AVREF V3P3 BVREF 15 + 100 µF 14 R1 0.47 µF R2 Figure 24. Typical Application Schematic Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 27 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com Typical Applications (continued) 8.2.1.1 Design Requirements Table 9 gives design input parameters for system design. Table 9. Design Parameters DESIGN PARAMETER REFERENCE EXAMPLE VALUE Supply voltage VM 24 V Motor winding resistance RL 4.5 Ω/phase Motor winding inductance LL 10.5 mH/phase Motor full step angle Target microstepping level Target motor speed Target full-scale current θstep 1.8°/step nm Non-circular 1/2 step v 120 rpm IFS 800 mA 8.2.1.2 Detailed Design Procedure 8.2.1.2.1 Current Regulation In a stepper motor, the full-scale current (IFS) is the maximum current driven through either winding. This quantity will depend on the TRQ pins, the xVREF analog voltage, and the sense resistor value (RSENSE). AVREF and BVREF can be configured to drive different currents, but in this example the same full-scale current is used in both coils. IF S ( A ) x V R E F ( V ) u T R Q (% ) A v x V R E F ( V ) u T R Q (% ) u R SENSE (: ) 6 .6 u R S E N S E ( : ) (2) TRQ is a DAC used to scale the output current. The current scalar value for different inputs is shown in Table 10. Table 10. Torque DAC Settings TRQ1 TRQ0 CURRENT SCALAR (TRQ) 1 1 25% 1 0 50% 0 1 75% 0 0 100% Example: If the desired full-scale current is 800 mA Set RSENSE = 250 mΩ, assume TRQ = 100%. xVREF would have to be 1.32 V. Create a resistor divider from V3P3 (3.3 V) to set AVREF and BVREF ≈ 1.32 V. Set R2 = 10 kΩ, set R1 = 15 kΩ Note that IFS must also follow Equation 3 in order to avoid saturating the motor. VM is the motor supply voltage, and RL is the motor winding resistance. VM (V) IFS (A) RL (:) 2 u RDS(ON) (:) RSENSE (:) (3) 8.2.1.2.2 Stepper Motor Speed Next, the driving waveform needs to be planned. In order to command the correct speed, determine the frequency of the input waveform. If the target motor speed is too high, the motor will not spin. Make sure that the motor can support the target speed. For a desired motor speed (v), microstepping level (nm), and motor full step angle (θstep), 28 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com ¦step VWHSV V SLVSD19A – JUNE 2015 – REVISED JULY 2015 v (rpm) u 360 (q / rot) Tstep (q / step) u nm (steps / microstep) u 60 (s / min) (4) θstep can be found in the stepper motor data sheet or written on the motor itself. The frequency ƒstep gives the frequency of input change on the DRV8881P. 1/ ƒstep = tSTEP on the diagram below. 120 rpm u 360q / rot ¦step VWHSV V +] 1.8q / step u 1/ 2 steps / microstep u 60 s / min (5) Figure 25. Example 1/2 Stepping Operation 8.2.1.2.3 Decay Modes The DRV8881 supports several different decay modes: slow decay, fast decay, mixed decay, and AutoTune (DRV8881E only). The current through the motor windings is regulated using an adjustable fixed-time-off scheme. This means that after any drive phase, when a motor winding current has hit the current chopping threshold (ITRIP), the DRV8881 will place the winding in one of the decay modes for TOFF. After TOFF, a new drive phase starts. 8.2.1.2.4 Sense Resistor For optimal performance, it is important for the sense resistor to be: • Surface-mount • Low inductance • Rated for high enough power • Placed closely to the motor driver The power dissipated by the sense resistor equals Irms 2 × R. For example, if the rms motor current is 1.4 A and a 250 mΩ sense resistor is used, the resistor will dissipate 1.4 A2 × 0.25 Ω = 0.49 W. The power quickly increases with higher current levels. Resistors typically have a rated power within some ambient temperature range, along with a derated power curve for high ambient temperatures. When a PCB is shared with other components generating heat, margin should be added. It is always best to measure the actual sense resistor temperature in a final system, along with the power MOSFETs, as those are often the hottest components. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 29 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com Because power resistors are larger and more expensive than standard resistors, it is common practice to use multiple standard resistors in parallel, between the sense node and ground. This distributes the current and heat dissipation. 8.2.1.3 Application Curve Figure 26. DRV8881P Inputs and Output Current Waveform 30 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 8.2.2 Alternate Application In this application, the DRV8881P will be operated in parallel mode in order to drive a single brushed-DC motor. DRV8881PPWP 28 1 GND CPL TRQ0 CPH 27 26 TRQ1 0.1 µF VCP 0.47 µF 4 PARA VM AIN1 AOUT1 AIN2 AISEN BIN1 AOUT2 24 5 23 100 m 6 7 21 BDC 22 BDC 8 BIN2 BOUT2 20 9 ADECAY BISEN BDECAY BOUT1 nFAULT VM nSLEEP GND 19 10 18 11 17 10 k VM 3 25 V3P3 0.1 µF 2 VM 12 16 0.1 µF 13 TOFF AVREF V3P3 BVREF 15 + 100 µF 14 R1 0.47 µF R2 Figure 27. Typical Application Schematic 8.2.2.1 Design Requirements Table 11 gives design input parameters for system design. Table 11. Design Parameters REFERENCE EXAMPLE VALUE Supply voltage DESIGN PARAMETER VM 24 V Motor winding resistance RL 6Ω LL 4.1 mH ITRIP 2A Motor winding inductance Target maximum motor current 8.2.2.2 Detailed Design Procedure 8.2.2.2.1 Current Regulation The maximum current (ITRIP) is set by the TRQ pins, the xVREF analog voltage, and the sense resistor value (RSENSE). In parallel mode the winding current is set by AVREF only and BVREF is ignored. When starting a brushed-DC motor, a large inrush current may occur because there is no back-EMF. Current regulation will act to limit this inrush current and prevent high current on startup. Example: If the desired regulation current is 2 A Set RSENSE = 100 mΩ, assume TRQ = 100%. AVREF would have to be 1.32 V. Create a resistor divider from V3P3 (3.3 V) to set AVREF ≈ 1.32 V: Set R2 = 10 kΩ, set R1 = 15 kΩ Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 31 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 8.2.2.3 Application Curves 32 Figure 28. DRV8881P Startup Current Waveform Without Current Regulation Figure 29. DRV8881P Startup Current Waveform Without Current Regulation (Zoomed In) Figure 30. DRV8881P Startup Current Waveform With 2-A Current Regulation Figure 31. DRV8881P Startup Current Waveform With 2-A Current Regulation (Zoomed In) Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 9 Power Supply Recommendations The DRV8881 is designed to operate from an input voltage supply (VM) range between 6.5 V and 45 V. THe device has an absolute maximum rating of 50 V. A 0.1 µF ceramic capacitor rated for VM must be placed at each VM pin as close to the DRV8881 as possible. In addition, a bulk capacitor must be included on VM. 9.1 Bulk Capacitance Sizing Having appropriate local bulk capacitance is an important factor in motor drive system design. It is generally beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size. The amount of local capacitance needed depends on a variety of factors, including: • The highest current required by the motor system • The power supply’s capacitance and ability to source current • The amount of parasitic inductance between the power supply and motor system • The acceptable voltage ripple • The type of motor used (brushed DC, brushless DC, stepper) • The motor braking method The inductance between the power supply and motor drive system will limit the rate current can change from the power supply. If the local bulk capacitance is too small, the system will respond to excessive current demands or dumps from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage remains stable and high current can be quickly supplied. The data sheet generally provides a recommended value, but system-level testing is required to determine the appropriate sized bulk capacitor. The voltage rating for bulk capacitors should be higher than the operating voltage, to provide margin for cases when the motor transfers energy to the supply. Power Supply Parasitic Wire Inductance Motor Drive System VM + ± + Motor Driver GND Local Bulk Capacitor IC Bypass Capacitor Figure 32. Setup of Motor Drive System With External Power Supply Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 33 DRV8881 SLVSD19A – JUNE 2015 – REVISED JULY 2015 www.ti.com 10 Layout 10.1 Layout Guidelines Each VM terminal must be bypassed to GND using a low-ESR ceramic bypass capacitors with recommended values of 0.1 μF rated for VM. These capacitors should be placed as close to the VM pins as possible with a thick trace or ground plane connection to the device GND pin. The VM pin must be bypassed to ground using a bulk capacitor rated for VM. This component may be an electrolytic. A low-ESR ceramic capacitor must be placed in between the CPL and CPH pins. A value of 0.1 μF rated for VM is recommended. Place this component as close to the pins as possible. A low-ESR ceramic capacitor must be placed in between the VM and VCP pins. A value of 0.47 μF rated for 16 V is recommended. Place this component as close to the pins as possible. Bypass V3P3 to ground with a ceramic capacitor rated 6.3 V. Place this bypassing capacitor as close to the pin as possible. The current sense resistors should be placed as close as possible to the device pins in order to minimize trace inductance between the pin and resistor. 10.2 Layout Example + 0.1 µF CPL GND CPH TRQ0 VCP TRQ1 0.1 µF RAISEN VM PARA AOUT1 AIN1 0.47 µF AISEN AIN2 AOUT2 BIN1 BOUT2 BIN2 RBISEN BISEN ADECAY BOUT1 BDECAY VM nFAULT GND nSLEEP BVREF TOFF AVREF V3P3 0.1 µF 0.1 µF Figure 33. Layout Recommendation 34 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 DRV8881 www.ti.com SLVSD19A – JUNE 2015 – REVISED JULY 2015 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation • PowerPAD™ Thermally Enhanced Package, SLMA002 • PowerPAD™ Made Easy, SLMA004 • Current Recirculation and Decay Modes, SLVA321 • Calculating Motor Driver Power Dissipation, SLVA504 • Understanding Motor Driver Current Ratings, SLVA505 • High Resolution Microstepping Driver With the DRV88xx Series, SLVA416 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8881 35 PACKAGE OPTION ADDENDUM www.ti.com 5-Oct-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) DRV8881EPWP ACTIVE HTSSOP PWP 28 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 125 DRV8881E DRV8881EPWPR ACTIVE HTSSOP PWP 28 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 125 DRV8881E DRV8881ERHRR ACTIVE WQFN RHR 28 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 DRV8881E DRV8881ERHRT ACTIVE WQFN RHR 28 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 DRV8881E DRV8881PPWP ACTIVE HTSSOP PWP 28 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 125 DRV8881P DRV8881PPWPR ACTIVE HTSSOP PWP 28 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 125 DRV8881P DRV8881PRHRR ACTIVE WQFN RHR 28 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 DRV8881P DRV8881PRHRT ACTIVE WQFN RHR 28 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 DRV8881P (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 5-Oct-2015 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 3-Oct-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DRV8881EPWPR HTSSOP PWP 28 2000 330.0 16.4 6.9 10.2 1.8 12.0 16.0 Q1 DRV8881ERHRR WQFN RHR 28 3000 330.0 DRV8881ERHRT WQFN RHR 28 250 180.0 12.4 3.8 5.8 1.2 8.0 12.0 Q1 12.4 3.8 5.8 1.2 8.0 12.0 DRV8881PPWPR HTSSOP PWP 28 2000 Q1 330.0 16.4 6.9 10.2 1.8 12.0 16.0 DRV8881PRHRR WQFN RHR 28 Q1 3000 330.0 12.4 3.8 5.8 1.2 8.0 12.0 Q1 DRV8881PRHRT WQFN RHR 28 250 180.0 12.4 3.8 5.8 1.2 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 3-Oct-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DRV8881EPWPR HTSSOP PWP 28 2000 367.0 367.0 38.0 DRV8881ERHRR WQFN RHR 28 3000 367.0 367.0 35.0 DRV8881ERHRT WQFN RHR 28 250 210.0 185.0 35.0 DRV8881PPWPR HTSSOP PWP 28 2000 367.0 367.0 38.0 DRV8881PRHRR WQFN RHR 28 3000 367.0 367.0 35.0 DRV8881PRHRT WQFN RHR 28 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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