Isahaya ISA1603AM1 For low frequency amplify application silicon pnp epitaxial type Datasheet

〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
For small type machine low frequency voltage
amplify application.
0.3
2.0
1.3
0.65 0.65
①
②
③
0.7
0.9
③
0.13
APPLICATION
①
②
2.1
0.425 1.25 0.425
0.65
0.8
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
2.8
1.5
ISA1603AM1
0.4
2.8
1.9
0.95 0.95
・Excellent linearity of DC forward current gain.
0.65
1.1
FEATURE
ISA1530AC1
0.15
ISA1530AC1 ISA1603AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
UNIT:mm
0~0.1
0~0.1
JEITA:SC-59
JEDEC:Similar to TO-236
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO
VEBO
VCEO
I C
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1530AC1 ISA1603AM1
-60
-6
-50
-150
200
+150
-55~+150
MARKING
UNIT
V
V
V
mA
mW
℃
℃
. TR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
V(BR)CEO
I CBO
I EBO
hFE*
hFE
VCE(sat)
fT
Cob
NF
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Test conditions
I C=-100μA,RBE=∞
VCB=-60V,I E =0
VEB=-4V,I C =0
VCE=-6V,I C =-1mA
VCE=-6V,I C =-0.1mA
I C =-100mA,I B =-10mA
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA
f=100Hz,RG=10kΩ
*:It shows hFE classification in below table.
hFE
Min
-50
-
-
120
70
-
-
-
Limits
Ave
-
-
-
-
-
-
200
4.0
Max
-
-0.1
-0.1
560
-
-0.3
-
-
-
-
20
Q
120~270
ISAHAYA ELECTRONICS CORPORATION
R
180~390
UNIT
V
μA
μA
-
-
V
MHz
pF
dB
S
270~560
〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
COLLECTOR DISSIPATION
VS AMBIENT TEMPERATURE
-50
250
IB=-0.18mA
IB=-0.2mA
IB=-0.14mA
COLLECTOR DISSIPATION Pc(mW)
IB=-0.16mA
COLLECTOR CURRENT IC(mA)
200
150
100
50
IB=-0.12mA
-40
IB=-0.10mA
-30
IB=-0.08mA
IB=-0.06mA
-20
IB=-0.04mA
-10
IB=-0.02mA
IB=0mA
0
0
50
100
150
-0
-1
-3
-4
COLLECTOR・EMITTER VOLTAGE VCE(V)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS COLLECTOR CURRENT
BASE TO EMITTER SATURATION VOLTAGE
VS COLLECTOR CURRENT
-5
-10.0
BASE TO EMITTER SATURATION VOLTAGE
VBE(sat)(V)
IC/IB=10
Ta=100℃
Ta=25℃
-100
Ta=-40℃
-10
-0.1
-1
-10
-100
IC/IB=10
Ta=100℃ Ta=25℃ Ta=-40℃
-1.0
-0.1
-0.1
-1000
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
COMMON EMITTER TRANSFER
COMMON EMITTER TRANSFER
-1
-1000
-100
VCE=-6V
VCE=-6V
-0.8
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
-2
AMBIENT TEMPERATURE Ta(℃)
-1000
COLLECTOR TO EMITTER SATURATION VOLTAGE
VCE(sat)(mV)
-0
Ta=100℃
-0.6
Ta=25℃
-0.4
Ta=-40℃
-0.2
-0
-0
-0.2
-0.4
-0.6
-0.8
BASE TO EMITTER VOLTAGE VBE(V)
-1
-80
-60
Ta=100℃
-40
Ta=25℃
Ta=-40℃
-20
-0
-0
-0.2
-0.4
-0.6
-0.8
BASE TO EMITTER VOLTAGE VBE(V)
ISAHAYA ELECTRONICS CORPORATION
-1
〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
-10000
400
VCE=-6V
GAIN BAND WIDTH PRODUCT fT[MHz]
DC FORWARD CURRENT GAIN hFE(-)
VCE=-6V
Ta=-40℃ Ta=25℃ Ta=100℃
-1000
-100
-10
-0.1
300
200
100
0
-1
-10
-100
-1000
0.1
1
EMITTER CURRENT IE[mA]
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS COLLECTOR TO BASE VOLTAGE
EMITTER INPUT CAPACITANCE
VS EMITTER TO BASE VOLTAGE
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
EMITTER INPUT CAPACITANCE Cib(pF)
100
Ta=25℃
f=1MHz
10
Cib
Cob
1
0.1
1
10
10
100
COLLECTOR TO BASE VOLTAGE VCB(V)
EMITTER TO BASE VOLTAGE VEB(V)
ISAHAYA ELECTRONICS CORPORATION
100
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jun.2013
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