〈SMALL-SIGNAL TRANSISTOR〉 ISA1530AC1 ISA1603AM1 . FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING For small type machine low frequency voltage amplify application. 0.3 2.0 1.3 0.65 0.65 ① ② ③ 0.7 0.9 ③ 0.13 APPLICATION ① ② 2.1 0.425 1.25 0.425 0.65 0.8 ・Small collector to emitter saturation voltage VCE(sat)=-0.3Vmax 2.8 1.5 ISA1603AM1 0.4 2.8 1.9 0.95 0.95 ・Excellent linearity of DC forward current gain. 0.65 1.1 FEATURE ISA1530AC1 0.15 ISA1530AC1 ISA1603AM1 is super mini package resin sealed silicon PNP epitaxial type transistor. These are designed for low frequency voltage amplify application . UNIT：mm 0～0.1 0～0.1 JEITA：SC-59 JEDEC：Similar to TO-236 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol Parameter ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings ISA1530AC1 ISA1603AM1 -60 -6 -50 -150 200 +150 -55～+150 MARKING UNIT V V V mA mW ℃ ℃ . TR ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ ｈＦＥ* ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ Cob NF Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Test conditions I C=-100μA，RBE=∞ VCB=-60V，I E =0 VEB=-4V，I C =0 VCE=-6V，I C =-1mA VCE=-6V，I C =-0.1mA I C =-100mA，I B =-10mA VCE=-6V，I E =10mA VCB=-6V，I E =0,f=1MHz VCE=-6V，I E =0.3mA f=100Hz，RG=10kΩ *：It shows hFE classification in below table. ｈFE Min -50 － － 120 70 － － － Limits Ave － － － － － － 200 4.0 Max － -0.1 -0.1 560 － -0.3 － － － － 20 Q 120～270 ISAHAYA ELECTRONICS CORPORATION R 180～390 UNIT V μA μA － － V MHz pF dB S 270～560 〈SMALL-SIGNAL TRANSISTOR〉 ISA1530AC1 ISA1603AM1 . FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COMMON EMITTER OUTPUT COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE -50 250 IB=-0.18mA IB=-0.2mA IB=-0.14mA COLLECTOR DISSIPATION Pc(mW) IB=-0.16mA COLLECTOR CURRENT IC(mA) 200 150 100 50 IB=-0.12mA -40 IB=-0.10mA -30 IB=-0.08mA IB=-0.06mA -20 IB=-0.04mA -10 IB=-0.02mA IB=0mA 0 0 50 100 150 -0 -1 -3 -4 COLLECTOR・EMITTER VOLTAGE VCE(V) COLLECTOR TO EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT BASE TO EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT -5 -10.0 BASE TO EMITTER SATURATION VOLTAGE VBE(sat)(V) IC/IB=10 Ta=100℃ Ta=25℃ -100 Ta=-40℃ -10 -0.1 -1 -10 -100 IC/IB=10 Ta=100℃ Ta=25℃ Ta=-40℃ -1.0 -0.1 -0.1 -1000 -1 -10 -100 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) COMMON EMITTER TRANSFER COMMON EMITTER TRANSFER -1 -1000 -100 VCE=-6V VCE=-6V -0.8 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) -2 AMBIENT TEMPERATURE Ta(℃) -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) -0 Ta=100℃ -0.6 Ta=25℃ -0.4 Ta=-40℃ -0.2 -0 -0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) -1 -80 -60 Ta=100℃ -40 Ta=25℃ Ta=-40℃ -20 -0 -0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) ISAHAYA ELECTRONICS CORPORATION -1 〈SMALL-SIGNAL TRANSISTOR〉 ISA1530AC1 ISA1603AM1 . FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DC FORWARD CURRENT GAIN VS COLLECTOR CURRENT GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT -10000 400 VCE=-6V GAIN BAND WIDTH PRODUCT fT[MHz] DC FORWARD CURRENT GAIN hFE(-) VCE=-6V Ta=-40℃ Ta=25℃ Ta=100℃ -1000 -100 -10 -0.1 300 200 100 0 -1 -10 -100 -1000 0.1 1 EMITTER CURRENT IE[mA] COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS COLLECTOR TO BASE VOLTAGE EMITTER INPUT CAPACITANCE VS EMITTER TO BASE VOLTAGE COLLECTOR OUTPUT CAPACITANCE Cob(pF) EMITTER INPUT CAPACITANCE Cib(pF) 100 Ta=25℃ f=1MHz 10 Cib Cob 1 0.1 1 10 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) EMITTER TO BASE VOLTAGE VEB(V) ISAHAYA ELECTRONICS CORPORATION 100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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