FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D G S D-PAK Absolute Maximum Ratings Symbol I-PAK G D G S S TC = 25oC unless otherwise noted. Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed FDD6N50TM / FDD6N50TM_WS / FDU6N50TU Unit 500 V 6 3.8 A A 24 A IDM Drain Current VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 89 0.71 W W/°C -55 to +150 °C 300 °C FDD6N50TM / FDD6N50TM_WS / FDU6N50TU Unit (Note 1) (TC = 25°C) - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds ±30 V 270 mJ Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case, Max. 1.4 RθJA Thermal Resistance, Junction-to-Ambient, Max. 83 ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 1 °C/W www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET November 2013 Part Number FDD6N50TM Top Mark FDD6N50 Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FDD6N50TM_WS FDD6N50S DPAK Tape and Reel 330 mm 16 mm 2500 units FDU6N50TU FDU6N50 IPAK Tube N/A N/A 75 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A -- 0.76 0.9 Ω gFS Forward Transconductance VDS = 40 V, ID = 3 A -- 2.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 720 940 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 95 190 pF -- 9 13.5 pF -- 6 20 ns -- 55 120 ns -- 25 60 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 6 A, VGS = 10 V, RG = 25 Ω (Note 4) VDS = 400 V, ID = 6 A, VGS = 10 V (Note 4) -- 35 80 ns -- 12.8 16.6 nC -- 3.7 -- nC -- 5.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time -- 275 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 6 A, dIF/dt =100 A/μs -- 1.7 -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 6 A, VDD = 50 V, L=13.5 mH, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 2 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Top : ID, Drain Current [A] 15 Bottom : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 10 ID , Drain Current [A] 20 Figure 2. Transfer Characteristics 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 5 0 0 10 20 30 40 150℃ 0 10 25℃ -55℃ -1 10 ※ Note 1. VDS = 40V 2. 250μ s Pulse Test -2 50 10 2 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.5 IDR , Reverse Drain Current [A] RDS(ON) [Ω ],Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0.5 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 -1 0 5 10 15 10 20 0.2 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 10 10 1.4 1.6 1.8 VDS = 400V 8 6 4 2 ※ Note : ID = 6A 0 5 10 15 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 1.2 VDS = 250V 10 0 1 10 1.0 VDS = 100V Coss 0 0.8 12 Ciss 100 0.6 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.4 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 4 3 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ♦ Notes : 0.9 1. VGS = 0 V 2. ID = 250 μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ♦ Notes : 0.5 1. VGS = 10 V 2. ID = 3 A 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 100 150 200 o Figure 9. Maximum Safe Operating Area 10 50 TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 8 Operation in This Area is Limited by R DS(on) 6 100 us ID, Drain Current [A] ID, Drain Current [A] 10 us 1 10 1 ms 10 ms DC 0 10 ※ Notes : -1 10 o 1. TC = 25 C 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 TC, Case Temperature [℃] ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 0 .2 ※ N o te s : 1 . Z θ J C(t) = 1 .4 ℃ /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z θ J C(t) 0 .1 10 -1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 4 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) 50KΩ 200nF 12V FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 5 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 6 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 7 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003 ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 9 www.fairchildsemi.com FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ AccuPower™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ CROSSVOLT™ QS™ Gmax™ TinyLogic® CTL™ GTO™ Quiet Series™ TINYOPTO™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyPower™ DEUXPEED® ISOPLANAR™ ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* MicroFET™ SMART START™ ® μSerDes™ MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™