BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 Peak collector current ICM f ≥ 10 MHz Values Unit V mA 50 Ptot Total power dissipation TS ≤ 93 °C mW 280 Junction temperature Tj Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 205 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Nov-28-1996 BFS 17W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics of any single Transistor Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current V 15 - - ICBO µA VCB = 10 V, IE = 0 - - 0.05 VCB = 25 V, IE = 0 - - 10 - - 100 Emitter-base cutoff current IEBO VEB = 2.5 V, IC = 0 DC current gain hFE - IC = 2 mA, VCE = 1 V 20 - 150 IC = 25 mA, VCE = 1 V 20 70 - Collector-emitter saturation voltage VCEsat IC = 10 mA, IB = 1 mA Semiconductor Group V - 2 0.1 0.4 Nov-28-1996 BFS 17W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics of any single Transistor Transition frequency fT GHz IC = 2 mA, VCE = 5 V, f = 200 MHz 1 1.4 - IC = 25 mA, VCE = 5 V, f = 200 MHz 1.3 2.5 - Collector-base capacitance Ccb VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance 0.8 - 0.26 - - 1.45 - - - 1.5 Cobs VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Noise figure 0.6 Cibo VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance - Cce VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Input capacitance pF F dB IC = 2 mA, VCE = 5 V, f = 800 MHz ZS = 0 Ω Transducer gain - 3.5 5 - 12.7 - |S21e|2 IC = 20 mA, VCE = 5 V, f = 500 MHz ZS = 50 Ω Linear output voltage V01=V02 mV IC = 14 mA, VCE = 5 V, dim = 60 dB f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω Third order intercept point - 100 - IP3 dBm IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω Semiconductor Group - 3 23 - Nov-28-1996 BFS 17W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 Semiconductor Group 10 -3 10 10 1 -2 -1 10 s 10 tp 0 4 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-28-1996 BFS 17W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.3 3.0 pF 1.1 Ccb GHz 10V 5V 3V fT 1.0 0.9 2.0 0.8 2V 0.7 1.5 0.6 0.5 1.0 0.4 0.3 1V 0.5 0.2 0.7V 0.1 0.0 0.0 0 4 8 Semiconductor Group 12 16 20 V 26 V CB 5 0 5 10 15 20 mA IC 30 Nov-28-1996