Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/14 CYStech Electronics Corp. N- AND P-Channel Enhancement Mode MOSFET MTD080C10H8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -100V -3.1A -8.8A 114mΩ 128mΩ Outline DFN5×6 MTD080C10H8 Pin 1 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTD080C10H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD080C10H8 CYStek Product Specification Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 2/14 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Gate-Source Voltage VGS TA=25 °C, VGS=10V (-10V) Continuous Drain Current TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) Pulsed Drain Current (Note 1 & 2) ID IDM TA=25 °C ±20 ±20 3.6 -3.1 2.9 -2.5 10.4 -8.8 6.6 -5.6 30 -28 TC=25 °C 1.6 (Note 3) 21 PD TC=100 °C Operating Junction and Storage Temperature Range Unit V A 2.5 (Note 3) PDSM TA=70 °C Power Dissipation IDSM Limits N-channel P-channel 100 -100 W 8.4 Tj; Tstg -55~+150 °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 6 50 (Note 3) Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. 100 1.5 - 74 82 5 2.5 ±100 1 25 98 123 - - 331 41 18 6.6 17 210.8 166.4 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf MTD080C10H8 S VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=80V, VGS=0V VDS=80V, VGS=0V, Tj=125°C ID=2A, VGS=10V ID=1.5A, VGS=5V VDS=10V, ID=2A pF VDS=50V, VGS=0V, f=1MHz ns VDS=50V, ID=2A, VGS=10V, RG=1Ω V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. *Qg *Qgs *Qgd Body Diode *IS - 9.1 1.5 2.6 - *ISM - - - - 3.6 14.4 1.2 - *VSD - *trr *Qrr - 0.78 20.8 19.9 nC Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 3/14 VDS=80V, ID=2A, VGS=10V A V VGS=0V, IS=2A ns nC IF=2A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions -100 -1.0 - 114 128 6.7 -2.6 ±10 -1 -25 145 179 - Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *IS - 749 66 36 7 18.8 45.8 19.4 18.2 2.3 4.2 - - - *ISM - - *VSD - V VGS=0V, IS=-2.5A *trr *Qrr - -0.78 17.9 15.4 -3.1 -12.4 -1.2 - ns nC IF=-2A, dIF/dt=100A/μs Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-80V, VGS=0V VDS=-80V, VGS=0V, Tj=125°C ID=-2A, VGS=-10V ID=-1.5A, VGS=-4.5V VDS=-10V, ID=-2A pF VDS=-50V, VGS=0V, f=1MHz ns VDS=-50V, ID=-2A, VGS=-10V, RG=1Ω nC VDS=-80V, ID=-2A, VGS=-10V V nA μA mΩ Dynamic A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 4/14 Recommended Soldering Footprint unit : mm MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 5/14 Recommended Stencil Design Note : 1. Stencil thickness 5 mil (0.127mm) 2. May need to be adjusted to specific requirements. MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 6/14 Typical Characteristics : Q1( N-channel ) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 5V ID, Drain Current(A) 25 20 BVDSS, Normalized Drain-Source Breakdown Voltage 30 4.5 V 4V 15 10 1.2 1 0.8 0.6 VGS=3.5V 5 ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=4.5V 100 VGS=10V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 0 100 R DS(ON), Normalized Static DrainSource On-State Resistance 1000 900 800 ID=2A 700 600 500 400 300 200 100 0 0 MTD080C10H8 2 4 6 8 VGS, Gate-Source Voltage(V) 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 VGS=10V, ID=2A RDS(ON) @Tj=25°C : 74mΩ typ. -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 7/14 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q1( N-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 1000 Ciss C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 -75 -50 -25 50 Forward Transfer Admittance vs Drain Current GFS , Forward Transfer Admittance(S) 25 50 75 100 125 150 175 Gate Charge Characteristics 10 10 VGS, Gate-Source Voltage(V) VDS=20V 1 VDS=10V Pulsed Ta=25°C 8 VDS=50V 6 4 VDS=80V 2 ID=2A 0 0.1 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 Qg, Total Gate Charge(nC) 10 Maximum Drain Current vs JunctionTemperature Maximum Safe Operating Area 4.5 RDS(ON) Limited 10 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 100μs 1ms 1 10ms 100ms 0.1 1s TA=25°C, Tj=150°C, VGS=10V RθJA=50°C/W, Single Pulse DC MTD080C10H8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 3.5 3 2.5 2 1.5 1 TA=25°C, VGS=10V RθJA=50°C/W 0.5 0 0.01 0.01 4 1000 25 50 75 100 125 150 TJ, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 8/14 Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics 30 300 VDS=10V 250 20 Power (W) ID, Drain Current (A) 25 15 150 100 5 50 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 6 TJ(MAX) =150°C TA=25°C RθJA=50°C/W 200 10 0 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 9/14 Typical Characteristics : Q2( P-channel) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 25 -I D, Drain Current (A) 1.4 -10V -9V -8V -7V -6V -5V 20 -BVDSS, Normalized Drain-Source Breakdown Voltage 30 -4.5V -4V 15 -3.5V 10 -3V 5 VGS=-2.5V 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 -75 -50 -25 10 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 1.2 -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V VGS=-4.5V 100 VGS=-10V 1 Tj=25°C 0.8 0.6 0.4 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance 1000 900 ID=-2A 800 2 4 6 -IS , Source Drain Current(A) 8 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source On-State Resistance(mΩ) Tj=150°C 700 600 500 400 300 200 100 2 1.8 VGS=-10V, ID=-2A 1.6 1.4 1.2 1 0.8 RDS(ON) @Tj=25°C : 114mΩ typ. 0.6 0.4 0 0 MTD080C10H8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 10/14 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q2(P-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 10 0 5 10 15 20 25 30 35 40 -VDS, Drain-Source Voltage(V) 45 -75 -50 -25 50 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics VDS=-20V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 10 100 10 1 VDS=-10V Pulsed TA=25°C 8 VDS=-50V 6 VDS=-80V 4 2 ID=-2A 0 0.1 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 10 12 14 16 Qg, Total Gate Charge(nC) 18 20 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 4 RDS(ON) Limited 10 -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 100μs 1ms 1 10ms 100ms 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=50°C/W, Single Pulse 1s DC MTD080C10H8 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 3 2.5 2 1.5 1 TA=25°C, VGS=-10V RθJA=50°C/W 0.5 0 0.01 0.01 3.5 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 11/14 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics 30 300 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 25 250 20 200 Power (W) -I D, Drain Current (A) VDS=-10V 15 150 10 100 5 50 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 6 TJ(MAX) =150°C TA=25°C RθJA=50°C/W 0 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 12/14 Reel Dimension Carrier Tape Dimension MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 13/14 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD080C10H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 14/14 DFN5×6 Dimension Marking: Device Name Date Code D080 C10 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.60 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.063 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 1.60 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.063 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD080C10H8 CYStek Product Specification