CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET MTN4003N3 BVDSS ID RDSON@VGS=10V, ID=500mA RDSON@VGS=4V, ID=100mA RDSON@VGS=2.5V, ID=100mA 30V 1.3A 305mΩ(typ) 450mΩ(typ) 810mΩ(typ) Features • Simple drive requirement • Small package outline • Pb-free package Symbol Outline MTN4003N3 SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=4V Continuous Drain Current @ TA=70°C, VGS=4V Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor ESD susceptibility Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Limits 30 ±20 1.3 1.0 3 1.38 (Note 3) 0.01 1000 (Note 4) -55~+150 Unit V A W W/°C V °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. 4. Human body model, 1.5kΩ in series with 100pF. MTN4003N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 2/8 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Limit Unit Rth,ja 90 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD Min. Typ. Max. Unit 30 1.0 - 1.3 305 450 810 435 1.8 ±10 1 10 450 600 1000 - V V - 43 13 8 22 26 72 55 1.34 0.1 0.57 - - 0.74 1.2 Test Conditions mS VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0 (Tj=70°C) VGS=10V, ID=500mA VGS=4V, ID=100mA VGS=2.5V, ID=100mA VDS=10V, ID=100mA pF VDS=5V, VGS=0, f=1MHz ns VDS=5V, ID=100mA, VGS=4.5V, RG=50Ω nC VDS=24V, ID=100mA, VGS=5V V VGS=0V, IS=100mA μA mΩ *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN4003N3 MTN4003N3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 4003 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 3/8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 2.5 ID, Drain Current (A) 1.4 10V 9V 8V 7V 6V 2.0 BVDSS, Normalized Drain-Source Breakdown Voltage 3.0 5V 4.5V 4V 3.5V 1.5 VGS=3V 1.0 VGS=2.5V 0.5 VGS=1.8V ID=250μA, VGS=0V 1.2 1 0.8 VGS=2V 0.6 0.0 0 0.5 1 1.5 VDS, Drain-Source Voltage(V) -75 -50 -25 2 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1 Tj=25°C 1800 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 2000 1600 1400 1200 VGS=2V 1000 800 VGS=4V 600 400 200 VGS=10V 0 0.001 0.01 0.1 ID, Drain Current(A) VGS=0V 0.8 0.6 Tj=150°C 0.4 0.2 0 0 1 1000 1 2 R DS(ON) , Normalized Static DrainSource On-State Resistance 900 800 700 600 ID=500mA 500 400 300 ID=100mA 200 100 1.8 VGS=4V, ID=100mA 1.6 1.4 1.2 VGS=2.5V, ID=100mA 1 0.8 VGS=10V, ID=500mA 0.6 0 0 MTN4003N3 0.2 0.4 0.6 0.8 IDR, Reverse Drain Current (A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th) , Normalized Threshold Voltage 100 Capacitance---(pF) Ciss C oss 10 Crss 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 60 80 100 120 140 160 Forward Transfer Admittance vs Drain Current 10 GFS, Forward Transfer Admittance(S) 5 VGS, Gate-Source Voltage(V) 20 40 Tj, Junction Temperature(°C) Gate Charge Characteristics 4 3 2 VDS=24V ID=0.1A 1 0 0 0.2 0.4 0.6 0.8 1 Qg, Total Gate Charge(nC) 1.2 VDS=5V 1 VDS=10V 0.1 Ta=25°C Pulsed 0.01 0.001 1.4 Maximum Safe Operating Area 0.01 0.1 ID, Drain Current(A) 1 Maximum Drain Current vs JunctionTemperature 10 1.6 1ms 1 10ms 100ms 1s 0.1 DC 0.01 TA=25°C, Tj=150°C, VGS=4V, RθJA=90°C/W Single Pulse 0.001 ID, Maximum Drain Current(A) 100μs ID, Drain Current (A) 0 1.4 1.2 1 0.8 0.6 0.4 TA=25°C, VGS=4V, RθJA=90°C/W 0.2 0 0.01 MTN4003N3 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 1.6 1000 VDS=10V PD, Power Dissipation(W) 1.4 ID, Drain Current (mA) 100 10 150°C 25°C, 0°C 1 -40°C 0.1 Mounted on FR-4 board 1.2 1 0.8 0.6 0.4 0.2 0 0.01 0 0.5 1 1.5 2 2.5 VGS, Gate-Source Voltage(V) 3 0 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=90 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN4003N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTN4003N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN4003N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C567N3 Issued Date : 2012.07.24 Revised Date : Page No. : 8/8 SOT-23 Dimension Marking: A L TE 4003 3 B S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D H K Style: Pin 1.Gate 2.Source 3.Drain J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN4003N3 CYStek Product Specification