M MCP6141/2/3/4 600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps Features Description • • • • The MCP6141/2/3/4 family of non-unity gain stable operational amplifiers (op amps) from Microchip Technology, Inc. operate with a single supply voltage as low as 1.4V, while drawing less than 1 µA (max.) of quiescent current per amplifier. These devices are also designed to support rail-to-rail input and output swing. • • • • Low Quiescent Current: 600 nA/Amplifier (typ.) Stable for gains of 10 V/V or higher Rail-to-Rail Input: -0.3V (min.) to VDD + 0.3V (max.) Rail-to-Rail Output: - VSS+10 mV (min.) to V DD-10 mV (max.) Gain Bandwidth Product: 100 kHz (typ.) Wide Supply Voltage Range: 1.4V to 5.5V (max.) Available in Single, Dual and Quad Chip Select (CS) with MCP6143 Applications • • • • The MCP6141/2/3/4 op amps have a gain bandwidth product of 100 kHz (typ.) and are stable for gains of 10 V/V or higher. This specification makes these devices appropriate for battery-powered applications where higher frequency responses from the amplifier are required. The MCP6141/2/3/4 family of op amps are offered in single (MCP6141), single with a Chip Select (CS) feature (MCP6143), dual (MCP6142) and quad (MCP6144) configurations. Toll Booth Tags Wearable Products Temperature Measurement Battery-Powered Typical Applications Available Tools VDD • Spice macro models (at www.microchip.com) • FilterLab® Software (at www.microchip.com) Package Types MCP6141 PDIP, SOIC, MSOP NC 1 -IN 2 +IN 3 VSS 4 8 NC + MCP6142 PDIP, SOIC, MSOP OUTA 1 7 VDD -INA 2 6 OUT +INA 3 5 NC -IN 2 +IN 3 VSS 4 8 CS + 7 VDD 6 OUT 5 NC - A+ +1.4V to 5.5V 7 OUTB +B - VSS 4 MCP6143 PDIP, SOIC, MSOP NC 1 8 VDD 1k Ω 5 +INB 14 OUTD A D -INA1 2 - + + - 13 -IND 12 +IND +INA1 3 VDD 4 +INB 5 -INB 6 - B+ +COUTB1 7 IDD 11 VSS 10 +INC 9 -INC MCP614X VSS RI 100 kΩ RF = 1 MΩ 6 -INB High Side Battery Current Sensor RF G n = 1 + ------ ≥ 10V/V RI MCP6144 PDIP, SOIC, TSSOP OUTA 1 VDD V1 V2 V3 R1 R2 R3 I1 I2 I3 RF IF 8 OUTC VOUT VREF MCP614X Summing Amplifier 1 1 1 G n = 1 + R F ------ + ------ + ------ ≥ 10V/V R 1 R 2 R 3 2002 Microchip Technology Inc. 21668A-page 1 MCP6141/2/3/4 1.0 1.1 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE Name Maximum Ratings† VDD - VSS .........................................................................7.0V All inputs and outputs........................ VSS -0.3V to V DD +0.3V Difference Input voltage ....................................... |VDD - VSS| Function +IN/+INA/+INB/+INC/+IND Non-inverting Inputs -IN/-INA/-INB/-INC/-IND Inverting Inputs VDD Positive Power Supply VSS Negative Power Supply OUT/OUTA/OUTB/OUTC/OUTD Outputs Output Short Circuit Current ..................................continuous Current at Input Pins ....................................................±2 mA CS Chip Select Current at Output and Supply Pins ............................±30 mA NC No internal connection Storage temperature .....................................-65°C to +150°C Junction Temperature, TJ ............................................ +150°C ESD protection on all pins (HBM:MM).................. ≥ 4 kV:200 V †Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2, R L = 1 MΩ to VDD /2, and VOUT ~ VDD/2. Parameters Sym Min Typ Max Units VOS -3.0 — +3.0 mV ∆VOS/∆T — ±1.5 — µV/°C PSRR 70 85 — dB Input Bias Current IB — 1.0 — pA Input Bias Current Over-Temperature IB — — 100 pA Input Offset Current IOS — 1.0 — pA Common Mode Input Impedance ZCM — 1013||6 — Ω||pF ZDIFF — 13 10 ||6 — Ω||pF Common-Mode Input Range VCMR VSS − 0.3 — VDD + 0.3 V Common-Mode Rejection Ratio CMRR 62 80 — dB VDD = 5V, VCM = -0.3V to 5.3V 60 75 — dB VDD = 5V, VCM = 2.5V to 5.3V 60 80 — dB VDD = 5V, VCM = -0.3V to 2.5V 95 115 — dB RL = 50 kΩ to VDD /2, 100 mV < VOUT < (V DD − 100 mV) — VDD − 10 mV RL = 50 kΩ to VDD /2 21 — mA VOUT = 2.5V, VDD = 5 V Input Offset Input Offset Voltage Drift with Temperature Power Supply Rejection Conditions VCM = VSS TA= -40°C to +85°C Input Bias Current and Impedance Differential Input Impedance TA= -40°C to +85°C Common Mode Open Loop Gain DC Open Loop Gain (large signal) AOL Output Maximum Output Voltage Swing Output Short Circuit Current VOL, VOH VSS + 10 IO — V DD 1.4 — 5.5 V IQ 0.3 0.6 1.0 µA Power Supply Supply Voltage Quiescent Current per amplifier 21668A-page 2 IO = 0 2002 Microchip Technology Inc. MCP6141/2/3/4 AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +5V, VSS = GND, TA = 25 °C, VCM = VDD/2, R L = 1 MΩ to VDD /2, CL = 60 pF, and VOUT ~ VDD /2. Parameters Sym Min Typ Max Units GBWP — 100 — kHz Slew Rate SR — 24 — V/ms Phase Margin PM — 60 — ° Input Voltage Noise En — 5.0 — µVp-p Input Voltage Noise Density en — 170 — nV/√Hz f = 1 kHz Input Current Noise Density in — 0.6 — fA/√Hz f = 1 kHz Gain Bandwidth Product Conditions G = +10 f = 0.1 Hz to 10 Hz SPECIFICATIONS FOR MCP6143 CHIP SELECT FEATURE Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +1.4V to +5.5V, VSS = GND, TA = 25 °C, VCM = VDD/2, R L = 1 MΩ to VDD /2, CL = 60 pF, and VOUT ~ VDD /2. Parameters Sym Min Typ Max Units Conditions CS Logic Threshold, Low VIL VSS — VSS + 0.3 V For entire VDD range CS Input Current, Low ICSL — 5.0 — pA CS = VSS CS Logic Threshold, High VIH VDD - 0.3 — V DD V For entire VDD range CS Input Current, High ICSH — 5.0 — pA CS = VDD IQ — 20 — pA CS = VDD — 20 — pA CS = VDD tON — 2.0 50 ms CS low = VSS + 0.3V, G = +1 V/V, VOUT = 0.9 VDD/2 tOFF — 10 — µs CS high = VDD - 0.3V, G = +1 V/V VOUT = 0.1 VDD/2 VHYST — 0.6 — V VDD = 5V CS Low Specifications CS High Specifications CS Input High, GND Current Amplifier Output Leakage, CS High Dynamic Specifications CS Low to Amplifier Output High Turn-on Time CS High to Amplifier Output High Z Hysteresis TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +1.4V to +5.5V, VSS = GND. Parameters Symbol Min Typ Max Units Specified Temperature Range TA -40 — +85 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C θJA — 85 — °C/W Conditions Temperature Ranges Note 1 Thermal Package Resistances Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC θJA — 163 — °C/W Thermal Resistance, 8L-MSOP θJA — 206 — °C/W Thermal Resistance, 14L-PDIP θJA — 70 — °C/W Thermal Resistance, 14L-SOIC θJA — 108 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W Note 1: The MCP6141/2/3/4 family of op amps operates over this extended range, but with reduced performance. 2002 Microchip Technology Inc. 21668A-page 3 MCP6141/2/3/4 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 16% 14% 1200 Samples VDD = 5.5 V Percentage of Occurrences Percentage of Occurrences Note: Unless otherwise indicated, VDD = +5V, VSS = GND, TA = 25°C, VCM = VDD/2, RL = 1 MΩ to VDD/2, CL = 60 pF, and VOUT ~ V DD/2. 12% 10% 8% 6% 4% 2% 0% -3 -2 -1 0 1 2 35% 30% 1200 Samples VDD = 1.4 V 25% 20% 15% 10% 5% 0% 3 -10 Input Offset Voltage (mV) 14% 600 1200 Samples VDD = 1.4 V 12% 10% 8% 6% 4% 2% 0% -3 -2 -1 0 1 2 200 0 -200 TA = +85°C TA = +25°C TA = -40°C -400 Input Offset Voltage (µV) Percentage of Occurrences 25% 20% 15% 10% 5% 0% -5 0 5 10 Input Offset Voltage Drift (µV/°C) FIGURE 2-3: Histogram of Input Offset Voltage Drift with VDD = 5.5V. 21668A-page 4 0.0 0.5 1.0 1.5 Common Mode Input Voltage (V) 2.0 FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage vs. Temperature with VDD = 1.4V. 600 1200 Samples VDD = 5.5 V -10 10 VDD = 1.4 V -600 -0.5 3 FIGURE 2-2: Histogram of Input Offset Voltage with VDD = 1.4V. 30% 5 400 Input Offset Voltage (mV) 35% 0 FIGURE 2-4: Histogram of Input Offset Voltage Drift with VDD = 1.4V. Input Offset Voltage (µV) Percentage of Occurrences FIGURE 2-1: Histogram of Input Offset Voltage with VDD = 5.5V. 16% -5 Input Offset Voltage Drift (µV/°C) VDD = 5.5 V TA = +85°C TA = +25°C TA = -40°C 400 200 0 -200 -400 -600 -0.5 TA = +85°C TA = +25°C TA = -40°C 0.5 1.5 2.5 3.5 4.5 Common Mode Input Voltage (V) 5.5 FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage vs. Temperature with VDD = 5.5V. 2002 Microchip Technology Inc. MCP6141/2/3/4 Input Offset Voltage (µV) 500 RL = 50 k: 450 VDD = 1.4 V 400 350 VDD = 5.5 V 300 250 Input Bias, Offset Currents (pA) Note: Unless otherwise indicated, VDD = +5V, VSS = GND, TA = 25°C, VCM = VDD/2, RL = 1 MΩ to VDD/2, CL = 60 pF, and VOUT ~ V DD/2. 50 40 Input Bias Current 30 20 10 Input Offset Current 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) FIGURE 2-7: Input Offset Voltage vs. Output Voltage vs. Power Supply Voltage. TA = 85°C VDD = 5.5 V Common Mode Input Voltage (V) FIGURE 2-10: Input Bias, Offset Currents vs. Common Mode Input Voltage with Temperature = 85°C. 300 Eni = 4.7 µVP-P, f = 0.1 to 10 Hz eni = 167 nV/Hz, f = 1 kHz Input Noise Voltage Density (nV/Hz) Input Noise Voltage Density (nV/Hz) 1,000 200 150 100 50 0 -0.5 100 FIGURE 2-8: vs. Frequency. 100 10 100 Frequency (Hz) 1000 70 CMRR 50 40 30 20 1 10 100 100 1000 Frequency (Hz) FIGURE 2-9: Common Mode Rejection Ratio, Power Supply Rejection Ratio vs. Frequency. 2002 Microchip Technology Inc. 1.5 2.5 3.5 4.5 5.5 FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage. 100 VDD = 5.0 V PSRR+ Referred to Input 80 60 0.5 Common Mode Input Voltage (V) Input Noise Voltage Density PSRR- 90 CMRR, PSRR (dB) 1 CMRR, PSRR (dB) 0.1 f = 1 kHz VDD = 5.0 V 250 95 90 PSRR (VCM = VSS) 85 80 CMRR (VDD = 5.0 V, VCM = -0.3 V to +5.3 V) 75 70 -40 -20 0 20 40 60 Ambient Temperature (°C) 80 FIGURE 2-12: Common Mode Rejection Ratio, Power Supply Rejection Ratio vs. Ambient Temperature. 21668A-page 5 MCP6141/2/3/4 50 VCM = VDD VDD = 5.5 V 40 30 Input Bias Current 20 10 Input Offset Current 0 25 35 45 55 65 75 Quiescent Current per amplifier (mA) Input Bias and Offset Currents (pA) Note: Unless otherwise indicated, VDD = +5V, VSS = GND, TA = 25°C, VCM = VDD/2, RL = 1 MΩ to VDD/2, CL = 60 pF, and VOUT ~ V DD/2. 0.7 0.6 0.5 0.4 TA = 85°C 0.3 TA = 25°C TA = -40°C 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 85 Ambient Temperature (°C) Power Supply Voltage (V) FIGURE 2-16: Quiescent Current Vs. Power Supply Voltage vs. Temperature. -30 Gain 80 -60 60 -90 Phase 140 40 -120 20 -150 0 -180 130 120 110 100 90 RL = 50 k: VOUT = 100 mV to VDD - 100 mV 60 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Power Supply Voltage (V) 5.0 5.5 FIGURE 2-15: DC Open Loop Gain vs. Power Supply Voltage. 21668A-page 6 110 100 VDD = 1.4 V VOUT = 0.5 V to 0.9 V 90 80 70 1k 10k Load Resistance (:) 100k FIGURE 2-17: DC Open Loop Gain vs. Load Resistance vs. Power Supply Voltage. Small Signal DC Open Loop Gain (dB) DC Open Loop Gain (dB) 140 70 120 60 100 FIGURE 2-14: Open Loop Gain, Phase vs. Frequency with VDD = 5.5V. 80 VDD = 5.5 V VOUT = 0.5 V to 5.0 V 130 100k 100000 Frequency (Hz) 10k 10000 1k 1000 100 -210 10 0.01 1 VDD = 5.5 V -20 DC Open-Loop Gain (dB) 0 100 Open-Loop Phase (°) 120 0.1 Open-Loop Gain (dB) FIGURE 2-13: Input Bias and Offset Currents vs. Ambient Temperature. 140 130 RL = 50 k: VDD = 5.5 V 120 110 VDD = 1.4 V 100 90 80 70 60 0.00 0.05 0.10 0.15 0.20 0.25 0.30 Output Voltage Headroom; VDD-VOUT or VOUT-VSS (V) FIGURE 2-18: Small Signal DC Open Loop Gain vs. Output Voltage Headroom vs. Power Supply. 2002 Microchip Technology Inc. MCP6141/2/3/4 FIGURE 2-19: Channel to Channel Separation vs. Frequency (MCP6142 and MCP6144 only). 60 Phase Margin 60 45 40 30 20 100 15 VDD = 5.5 V 0 -20 0 20 40 60 60 -20 8 60 Phase Margin 2 0 45 30 G = +10 V/V VDD = 5.5 V 0.00 10p 15 0 0.00 100p 0.00 1n Load Capacitance (F) FIGURE 2-21: Closed Loop Gain Frequency, Phase Margin vs. Load Capacitance with VDD = 5.5V. 2002 Microchip Technology Inc. Phase Margin (°) 0 0 20 40 60 Ambient Temperature (°C) 80 FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature with VDD = 1.4V. Output Short Circuit Current (pA) 75 Phase Margin (°) Closed Loop Gain Frequency (kHz) 90 15 VDD = 1.4 V CL = 60 pF -40 10 4 5.5 30 0 80 Closed Loop Gain Frequency 45 40 20 FIGURE 2-20: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature with VDD = 5.5V. 6 5.0 60 Phase Margin Ambient Temperature (°C) 12 4.5 80 0 -40 75 Phase Margin (°) 75 90 Gain Bandwidth Product Gain Bandwidth Product (kHz) 100 120 Phase Margin (°) Gain Bandwidth Product (kHz) FIGURE 2-22: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage. 90 Gain Bandwidth Product 80 4.0 Common Mode Input Voltage (V) Frequency (Hz) 120 3.5 10 0 -0.5 10k 10000 20 20 0 3.0 90 1k 1000 30 40 2.5 Input-Referred Gain Bandwidth Product 2.0 100 60 50 40 60 1.5 110 1.0 120 90 80 70 Phase Margin 120 100 80 0.5 130 180 160 140 0.0 140 Gain Bandwidth Product (kHz) Channel-to-Channel Separation (dB) Note: Unless otherwise indicated, VDD = +5V, VSS = GND, TA = 25°C, VCM = VDD/2, RL = 1 MΩ to VDD/2, CL = 60 pF, and VOUT ~ V DD/2. 40 35 -ISC, VDD = 5.5 V 30 +ISC, VDD = 5.5 V 25 20 15 10 5 +ISC, VDD = 1.4 V -ISC, VDD = 1.4 V 0 -40 -20 0 20 40 60 80 Ambient Temperature (°C) FIGURE 2-24: Output Short Circuit Current vs. Ambient Temperature vs. Power Supply Voltage. 21668A-page 7 MCP6141/2/3/4 Falling Edge Rising Edge -40 -20 0 20 40 60 Ambient Temperature (°C) FIGURE 2-25: Temperature. Output Voltage Headroom (mV) Output Voltage Swing (VP-P) 50 45 40 35 30 25 20 15 10 5 0 80 Slew Rate vs. Ambient VOL-VSS, VDD = 5.5 V 1 1.E-05 10µ 1.E-04 100µ 1.E-03 1m VDD = 1.4 V 1 0.1 100 100 1k 1000 10k 10000 FIGURE 2-28: Output Voltage Swing vs. Frequency vs. Power Supply Voltage. VOL-VSS, VDD = 1.4 V 10 VDD = 5.5 V Frequency (Hz) 1,000 100 10 Output Voltage Headroom (mV) Slew Rate (V/ms) Note: Unless otherwise indicated, VDD = +5V, VSS = GND, TA = 25°C, VCM = VDD/2, RL = 1 MΩ to VDD/2, CL = 60 pF, and VOUT ~ V DD/2. 1.E-02 10m 4.0 VDD = 5.5 V RL = 50 k: 3.5 3.0 2.5 VOL - VSS 2.0 1.5 1.0 VDD - VOH 0.5 0.0 -40 -20 Output Current Magnitude (A) FIGURE 2-26: Output Voltage Headroom vs. Output Current Magnitude vs. Power Supply Voltage. 0 20 40 60 Ambient Temperature (°C) 80 FIGURE 2-29: Output Voltage Headroom vs. Ambient Temperature with VDD = 5.5V. 0.08 0.06 Output Voltage (20 mV/div) Output Voltage (20 mV/div) 0.08 G = +11 V/V RL = 50 k: 0.04 0.02 0.00 -0.02 -0.04 -0.06 -0.08 0.E+00 1.E-04 2.E-04 3.E-04 4.E-04 5.E-04 6.E-04 7.E-04 8.E-04 9.E-04 1.E-03 Time (100 µs/div) FIGURE 2-27: Small Signal Non-Inverting Pulse Response vs. Time. 21668A-page 8 G = -10 V/V RF = 50 k: 0.06 0.04 0.02 0.00 -0.02 -0.04 -0.06 -0.08 0.E+00 1.E-04 2.E-04 3.E-04 4.E-04 5.E-04 6.E-04 7.E-04 8.E-04 9.E-04 1.E-03 Time (100 µs/div) FIGURE 2-30: Small Signal Inverting Pulse Response vs. Time. 2002 Microchip Technology Inc. MCP6141/2/3/4 Note: Unless otherwise indicated, VDD = +5V, VSS = GND, TA = 25°C, VCM = VDD/2, RL = 1 MΩ to VDD/2, CL = 60 pF, and VOUT ~ V DD/2. 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 G = -10 V/V RF = 50 k: 4.5 Output Voltage (V) Output Voltage (V) 5.0 G = +11 V/V RL = 50 k: 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.E+00 2.E-04 4.E-04 6.E-04 8.E-04 1.E-03 1.E-03 1.E-03 2.E-03 2.E-03 0.0 2.E-03 0.E+00 2.E-04 4.E-04 Time (200 µs/div) VOUT on VOUT Hi-Z CS Voltage 0.E+00 1.E-03 2.E-03 3.E-03 4.E-03 5.E-03 6.E-03 7.E-03 8.E-03 9.E-03 1.E-02 FIGURE 2-32: Chip Select (CS) to Amplifier Output Response Time (MCP6143 only). Input, Output Voltages (V) 1.E-03 1.E-03 2.E-03 2.E-03 2.E-03 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VOUT on Hysteresis CS swept high to low CS swept low to high VOUT HI-Z G = +11 V/V VIN = 3.0 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Chip Select Voltage (V) Time (1 ms/div) 6 1.E-03 FIGURE 2-34: Large Signal Inverting Pulse Response vs. Time. Output Voltage (V) VOUT on 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Output Voltage (V) Chip Select Voltage (V) G = +11 V/V V IN = 3.0 V 8.E-04 Time (200 µs/div) FIGURE 2-31: Large Signal Non-Inverting Pulse Response vs. Time. 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 6.E-04 FIGURE 2-35: Output Voltage vs. Chip Select (CS) Voltage (MCP6143 only). G = +11 V/V 5 4 3 2 VIN 1 VOUT 0 -1 0.E+00 5.E-03 1.E-02 2.E-02 2.E-02 3.E-02 Time (5 ms/div) FIGURE 2-33: The MCP6141/2/3/4 family shows no phase reversal (for information only– the Maximum Absolute Input Voltage is still VSS - 0.3V and VDD + 0.3V). 2002 Microchip Technology Inc. 21668A-page 9 MCP6141/2/3/4 3.0 APPLICATIONS INFORMATION 3.3 Rail-to-Rail Output The MCP6141/2/3/4 family of operational amplifiers are fabricated on Microchip’s state-of-the-art CMOS process. They are stable for noise gain of 10 V/V or higher. Microchip also produces a unity gain stable product, the MCP6041/2/3/4 family, which has similar specifications. The MCP6041/2/3/4 family has a bandwidth of 1.4 kHz at a noise gain of 10 V/V, while the MCP6141/2/3/4 family has a bandwidth of 10 kHz at a noise gain of 10 V/V. These devices are suitable for a wide range of applications requiring very low power consumption. With these op amps, the power supply pin needs to be bypassed with a 0.1 µF capacitor. The MCP6141/2/3/4 family Maximum Output Voltage Swing defines the maximum swing possible under a particular output load. According to the specification table, the output can reach up to 10 mV of either supply rail with a 50 kΩ load. 3.1 The maximum operating VCM that can be applied to the inputs is VSS -0.3V and VDD + 0.3V. Voltage on the input that exceeds this absolute maximum rating can cause excessive current to flow in or out of the input pins. Current beyond ±2 mA can cause possible reliability problems. Applications that exceed this rating must be externally limited with an input resistor, as shown in Figure 3-1. Rail-to-Rail Input The input stage of these devices uses two differential input stages in parallel; one operates at low VCM (common mode input voltage) and the other at high V CM. With this topology, the MCP6141/2/3/4 family operates with VCM up to 300 mV past either supply rail. The Input Offset Voltage is measured at both VCM = VSS - 0.3V and VDD + 0.3V to ensure proper operation. 3.2 3.4 Input Voltage and Phase Reversal The MCP6141/2/3/4 op amp family uses CMOS transistors at the input. It is designed to prevent phase reversal when the input pins exceed the supply voltages. Figure 2-33 shows an input voltage exceeding both supplies without output phase reversal. Output Loads and Battery Life The MCP6141/2/3/4 op amp family has low quiescent current, which supports battery-powered applications. There is minimal quiescent current glitch when chip select (CS) is raised or lowered. This prevents excessive current draw and reduced battery life when the part is turned off or on. Heavy resistive loads at the output can cause excessive battery drain. Driving a DC voltage of 2.5V across a 100 kΩ load resistor will cause the supply current to increase by 25 µA, depleting the battery 43 times as fast as IQ (0.6 µA typ) alone. High frequency signals (fast edge rate) across capacitive loads will also significantly increase supply current. For instance, a 0.1 µF capacitor at the output presents an AC impedance of 15.9 kΩ (1/2πfC) to a 100 Hz sinewave. It can be shown that the average power drawn from the battery by a 5.0 Vp-p sinewave (1.77 Vrms) under these conditions is: EQUATION P SUPPLY = ( V DD – V SS ) ( I Q + V L ( p – p ) fC L ) = ( 5V ) ( 0.6µA + 5.0V p – p ⋅ 100Hz ⋅ 0.1µF ) = 3.0µW + 50µW This will drain the battery 18 times as fast as IQ alone. 21668A-page 10 RIN MCP614X VOUT VIN ( Maximum expected V IN ) – V DD R IN ≥ -----------------------------------------------------------------------------2 mA V SS – ( Minimum expected V IN ) R IN ≥ --------------------------------------------------------------------------2 mA FIGURE 3-1: An input resistor, RIN, should be used to limit excessive input current if the inputs exceed the absolute maximum specification. 3.5 Stability The MCP6141/2/3/4 op amp family is designed to give high bandwidth and faster slew rate for circuits with high noise (Gn) or signal gain. The related unity-gain stable MCP6041/2/3/4 op amp family has lower AC performance, but it is preferable for low noise gain applications. Noise gain is defined to be the gain from a voltage source at the non-inverting input to the output when all other voltage sources are zeroed (shorted out). Noise gain is independent of signal gain and depends only on components in the feedback loop. 2002 Microchip Technology Inc. MCP6141/2/3/4 RG Note that the integrator circuit in Figure 3-3 becomes unity gain at high frequencies because of the capacitor. Therefore, this circuit is unstable for the MCP6141/2/3/4. RF MCP614X VOUT VIN Non-inverting noise gain: 1 + RF/RG ≥ +10 V/V RG VIN RF MCP614X VOUT Inverting noise gain: 1 + RF/R G ≥ +10 V/V FIGURE 3-2: Noise gain for inverting and non-inverting amplifier configuration. Figure 3-2 shows non-inverting and inverting amplifier circuits. In order for the amplifiers to be stable, the noise gain should meet the specified requirement: 3.6 Capacitive Load and Stability Driving capacitive loads can cause stability problems with voltage feedback op amps. Figure 2-21 shows how increasing the load capacitance will decrease the phase margin. While a phase margin above 60° is ideal, 45° is on the verge of instability. As can be seen, up to CL = 150 pF can be placed on the MCP6141/2/3/4 op amp outputs without any problems, while 250 pF creates a 45° phase margin. When the op amp is required to drive large capacitive loads (CL >150 pF), a small series resistor (RISO in Figure 3-4) at the output of the amplifier improves the phase margin. This resistor makes the output load resistive at higher frequencies, which improves the phase margin. The bandwidth reduction caused by the capacitive load, however, is not changed. To select RISO, start with 1 kΩ, then use the MCP6141 SPICE macro model and bench testing to adjust RISO until there is a minimum frequency response peaking. EQUATION R2 R1 RF G n = 1 + ------- ≥ 10V/V RG RISO Note that an inverting signal gain of G = -9 V/V corresponds to a noise gain G n = +10 V/V. Figure 3-3 shows a unity gain buffer and integrator that are unstable when used with the MCP6141/2/3/4 family. However, they are suitable for the MCP6041/2/3/4 family. VIN VOUT VIN R Unity gain buffer: Unstable for MCP614X C VIN MCP604X CL FIGURE 3-4: capacitive loads. 3.7 MCP604X VOUT MCP614X Amplifier circuit for heavy The MCP6143 Chip Select (CS) Option The MCP6143 is a single amplifier with a chip select (CS) option. When CS is pulled high, the supply current drops to 20 pA (typ.) and goes through the CS pin to VSS. When this happens, the amplifier is put into a high impedance state. By pulling CS low, the amplifier is enabled. If the CS pin is left floating, the amplifier will not operate properly. Figure 3-5 shows the output voltage and supply current response to a CS pulse. VOUT Integrator: Unstable for MCP614X FIGURE 3-3: Typical Circuits that are not suitable for the MCP6141/2/3/4 family. 2002 Microchip Technology Inc. 21668A-page 11 MCP6141/2/3/4 CS VIL VIH tOFF tON VOUT Hi-Z Hi-Z 0.6 µA, typ IVDD Circuit schematics for different guard ring implementations are shown in Figure 3-7. Figure 3-7A biases the guard ring to the input common mode voltage, which is most effective for non-inverting gains. Figure 3-7B biases the guard ring to a reference voltage (VREF, which can be ground), which is useful for inverting gains and precision photo sensing circuits. Figure 3-7A 5 pA, typ 5 pA, typ VDD 0.6 µA, typ 20 pA, typ IVSS 20 pA, typ ICS 5 pA, typ 5 pA, typ FIGURE 3-5: Timing Diagram for the CS function on the MCP6143 op amp. 3.8 MCP614X VREF Figure 3-7B VDD Layout Considerations Good PC board layout techniques will help you achieve the performance shown in the specifications and typical performance curves. It will also assist in minimizing Electro-Magnetic Compatibility (EMC) issues. 3.8.1 SURFACE LEAKAGE In applications where low input bias current is critical, PC board surface leakage effects and signal coupling from trace to trace need to be considered. Surface leakage is caused by a difference in voltage between traces, combined with high humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012Ω. A 5V difference would cause 5 pA of current to flow, which is greater than the input current of the MCP6141/2/3/4 family at 25°C (1 pA, typ). The simplest technique to reduce surface leakage is using a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin or trace. Figure 3-6 shows an example of a typical layout. IN- IN+ MCP614X VREF FIGURE 3-7: Two possible guard ring connection strategies to reduce surface leakage effects. 3.8.2 COMPONENT PLACEMENT In order to help prevent crosstalk: • Separate digital components from analog components, and low speed devices from high speed devices. • Keep sensitive traces short and straight. Separate them from interfering components and traces. This is especially important for high frequency (low rise time) signals. • Use a 0.1 µF supply bypass capacitor within 0.1” (2.5 mm) of the VDD pin. It must connect directly to the ground plane. VSS Guard Ring FIGURE 3-6: layout. 21668A-page 12 Example of Guard Ring 2002 Microchip Technology Inc. MCP6141/2/3/4 3.8.3 3.9 SIGNAL COUPLING The input pins of the MCP6141/2/3/4 family of op amps are high impedance, which allows noise injection. This noise can be capacitively or magnetically coupled. In either case, using a ground plane helps reduce noise injection. When noise is coupled capacitively, the ground plane provides shunt capacitance to ground for high frequency signals (Figure 3-8 shows the equivalent circuit). The coupled current, IM, produces a lower voltage (VTRACE 2) on the victim trace when the trace to ground plane capacitance (C SH2) is large and the terminating resistor (RT2) is small. Increasing the distance between traces and using wider traces also helps. CM IM VTRACE 1 CSH1 VTRACE 2 CSH2 Typical Applications 3.9.1 BATTERY CURRENT SENSING The MCP6141/2/3/4 op amps’ Common Mode Input Range, which goes 300 mV beyond both supply rails, supports their use in high side and low side battery current sensing applications. The very low quiescent current (0.6 µA, typ.) help prolong battery life, while the rail-to-rail output allows you to detect low currents. Figure 3-9 shows a high side battery current sensor circuit. The feedback and input resistors are sized to minimize power losses. The battery current (IDD) through the 1 kΩ resistor causes its top terminal to be more negative than the bottom terminal. This keeps the common mode input voltage of the op amp ≤ VDD, which is within its allowed range. The output of the op amp can reach VDD - 0.1 mV (see Figure 2-26), which is a smaller error than the offset voltage. RT2 VDD FIGURE 3-8: Equivalent circuit for capacitive coupling between traces on a PC board (with ground plane). When noise is coupled magnetically, the ground plane reduces the mutual inductance between traces. This occurs because the ground return current at high frequencies will follow a path directly beneath the signal trace. Increasing the separation between traces makes a significant difference. Changing the direction of one of the traces can also reduce magnetic coupling. If these techniques are not enough, it may help to place guard traces next to the victim trace. They should be on both sides of the victim trace and be as close as possible. Connect the guard traces to ground plane at both ends and in the middle for long traces. VDD IDD 1k Ω +1.4 V to 5.5 V MCP614X VSS 100 kΩ 1 MΩ FIGURE 3-9: Sensor. 3.9.2 High Side Battery Current SUMMING AMPLIFIER The rail-to-rail input and output, the 600 nA (typ.) quiescent current and the wide bandwidth make the MCP6141/2/3/4 family of operational amplifiers fit well in a summing amplifier circuit, as shown in Figure 3-10. V1 V2 V3 R1 I R2 1 I R3 2 I3 VREF RF - IF + VOUT MCP614X FIGURE 3-10: 2002 Microchip Technology Inc. Summing amplifier circuit. 21668A-page 13 MCP6141/2/3/4 In this configuration, the amplifier outputs the sum of the three input voltages. The ratio of the sum and the output voltage is defined using the feedback and input resistors. V REF is used to offset the output voltage. This family of amplifiers is stable for noise gain (G n) of 10 V/ V or higher. The Gn and the signal gain of the summing amplifier is calculated as shown below: EQUATION Noise Gain: 1 1 1 G n = 1 + R F ------ + ------ + ------ ≥ 10 V/V R 1 R 2 R 3 Signal Gain: –R V 01 = ---------F × V 1 R1 –R V 02 = ---------F × V 2 R2 –R V 03 = ---------F × V 3 R3 RF RF RF V 04 = 1 + ------ + ------ + ------ × V REF R 1 R 2 R 3 V OUT = V 01 + V 02 + V 03 + V 04 VOUT V – V 1 V REF – V 2 V REF – V 3 REF = R F ---------------------- + ---------------------- + ---------------------- + V REF R R R 1 2 3 At a noise gain of 10 V/V, the amplifier bandwidth is approximately 10 kHz. The bandwidth to quiescent current ratio of MCP6141/2/3/4 makes this device an appropriate choice for battery-powered applications. 21668A-page 14 2002 Microchip Technology Inc. MCP6141/2/3/4 4.0 SPICE MACRO MODEL The Spice macro model for the MCP6141, MCP6142, MCP6143 and MCP6144 simulates the typical amplifier performance of offset voltage, DC power supply rejection, input capacitance, DC common mode rejection, open loop gain over frequency, phase margin, output swing, DC power supply current, power supply current change with supply voltage, input common mode range, output voltage range vs. load and input voltage noise. The characteristics of the MCP6141, MCP6142, MCP6143 and MCP6144 amplifiers are similar in terms of performance and behavior. This single op amp macro model supports all four devices, with the exception of the chip select function of the MCP6143, which is not modeled. The listing for this macro model is shown on the next page. The most recent revision of the model can be downloaded from Microchip’s web site at www.microchip.com. 2002 Microchip Technology Inc. 21668A-page 15 MCP6141/2/3/4 Software License Agreement The software supplied herewith by Microchip Technology Incorporated (the “Company”) is intended and supplied to you, the Company’s customer, for use solely and exclusively on Microchip products. The software is owned by the Company and/or its supplier, and is protected under applicable copyright laws. All rights are reserved. Any use in violation of the foregoing restrictions may subject the user to criminal sanctions under applicable laws, as well as to civil liability for the breach of the terms and conditions of this license. THIS SOFTWARE IS PROVIDED IN AN “AS IS” CONDITION. NO WARRANTIES, WHETHER EXPRESS, IMPLIED OR STATUTORY, INCLUDING, BUT NOT LIMITED TO, IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE APPLY TO THIS SOFTWARE. THE COMPANY SHALL NOT, IN ANY CIRCUMSTANCES, BE LIABLE FOR SPECIAL, INCIDENTAL OR CONSEQUENTIAL DAMAGES, FOR ANY REASON WHATSOEVER. .SUBCKT MCP6141 1 2 3 4 5 * | | | | | * | | | | Output * | | | Negative Supply * | | Positive Supply * | Inverting Input * Non-inverting Input * * Macromodel for the MCP6141/2/3/4 op amp family: * MCP6141 (single) * MCP6142 (dual) * MCP6143 (single w/ CS; chip select is not modeled) * MCP6144 (quad) * * Revision History: * REV A: 06-Sep-02, KEB (created model) * * Recommendations: * Use PSPICE (or SPICE 2G6; other simulators may require translation) * For a quick, effective design, use a combination of: data sheet * specs, bench testing, and simulations with this macromodel * For high impedance circuits, set GMIN=100F in the .OPTIONS * statement * * Supported: * Typical performance at room temperature (25 degrees C) * DC, AC, Transient, and Noise analyses. * Most specs, including: offsets, DC PSRR, DC CMRR, input impedance, * open loop gain, voltage ranges, supply current, ... , etc. * * Not Supported: * Chip select (MCP6143) * Variation in specs vs. Power Supply Voltage * Distortion (detailed non-linear behavior) * Temperature analysis * Process variation * Behavior outside normal operating region * * Input Stage V10 3 10 -300M R10 10 11 258K R11 10 12 258K C11 11 12 3.53P C12 1 0 6.00P E12 1 14 POLY(4) 20 0 21 0 26 0 27 0 1.00M 117 117 1 1 I12 14 0 1.50P M12 11 14 15 15 NMI L=2.00U W=5.00U C13 14 2 6.00P M14 12 2 15 15 NMI L=2.00U W=5.00U I14 2 0 500E-15 C14 2 0 6.00P 2002 Microchip Technology Inc. 21668A-page 16 MCP6141/2/3/4 I15 15 4 300N V16 16 4 200M D16 16 15 DL V13 3 13 50.0M D13 14 13 DL * * Noise, PSRR, and CMRR I20 21 20 423U D20 20 0 DN1 D21 0 21 DN1 G26 0 26 POLY(1) 3 4 308U -56.0U R26 26 0 1 G27 0 27 POLY(2) 1 3 2 4 -979U 178U 178U R27 27 0 1 * * Open Loop Gain, Slew Rate G30 0 30 POLY(1) 12 11 0 1.00K R30 30 0 1 E31 31 0 POLY(1) 3 4 29.3 1.05 D31 30 31 DL E32 0 32 POLY(1) 3 4 57.0 2.04 D32 32 30 DL G33 0 33 POLY(1) 30 0 0 562 R33 33 0 1 C33 33 0 838M G34 0 34 POLY(1) 33 0 0 1.00 R34 34 0 1.00 C34 34 0 8.53U G35 0 35 POLY(2) 34 0 33 34 0 1.00 1.22 R35 35 0 1.00 * * Output Stage G50 0 50 POLY(1) 57 5 0 1.00 D51 50 51 DL R51 51 0 1K D52 52 50 DL R52 52 0 1K G53 3 0 POLY(1) 51 0 300N 1M G54 0 4 POLY(1) 52 0 300N -1M E55 55 0 POLY(2) 3 0 51 0 -10M 1 -100M D55 57 55 DLS E56 56 0 POLY(2) 4 0 52 0 10M 1 -100M D56 56 57 DLS G57 0 57 POLY(3) 3 0 4 0 35 0 0 17.8U 17.8U 35.5U R57 57 0 28.2K R58 57 5 1.00 C58 5 0 2.00P * * Models .MODEL NMI NMOS .MODEL DL D N=1 IS=1F .MODEL DLS D N=10M IS=1F .MODEL DN1 D IS=1F KF=1.17E-18 AF=1 * .ENDS MCP6141 2002 Microchip Technology Inc. 21668A-page 17 MCP6141/2/3/4 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX XXXXXNNN YYWW MCP6141 I/P058 0223 8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW MCP6142 I/SN0223 NNN 058 8-Lead MSOP Note: Example: XXXXXX 6143I YWWNNN 223058 Legend: * Example: XX...X YY WW NNN Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard marking consists of Microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office. 21668A-page 18 2002 Microchip Technology Inc. MCP6141/2/3/4 5.1 Package Marking Information (Continued) 14-Lead PDIP (300 mil) (MCP6144) XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN 14-Lead SOIC (150 mil) (MCP6144) Example: MCP6144-I/P 0223058 Example: MCP6144ISL XXXXXXXXXX XXXXXXXXXX YYWWNNN 14-Lead TSSOP (MCP6144) 0223058 Example: XXXXXX YYWW 6144ST 0223 NNN 058 2002 Microchip Technology Inc. 21668A-page 19 MCP6141/2/3/4 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A2 A L c A1 β B1 p eB B Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D L c § B1 B eB α β MIN .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 INCHES* NOM MAX 8 .100 .155 .130 .170 .145 .313 .250 .373 .130 .012 .058 .018 .370 10 10 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 21668A-page 20 2002 Microchip Technology Inc. MCP6141/2/3/4 8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 h α 45° c A2 A φ β L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 A1 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MIN MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 2002 Microchip Technology Inc. 21668A-page 21 MCP6141/2/3/4 8-Lead Plastic Micro Small Outline Package (MS) (MSOP) E p E1 D 2 B n 1 α A2 A c φ A1 (F) L β Units Number of Pins Pitch Dimension Limits n p Overall Height NOM MAX 8 0.65 .026 A .044 .030 Standoff A1 .002 E .184 Molded Package Width MIN 8 A2 Overall Width MAX NOM Molded Package Thickness § MILLIMETERS* INCHES MIN 1.18 .038 0.76 .006 0.05 .193 .200 .034 0.86 0.97 4.67 4.90 .5.08 0.15 E1 .114 .118 .122 2.90 3.00 3.10 Overall Length D .114 .118 .122 2.90 3.00 3.10 Foot Length L .016 .022 .028 0.40 0.55 0.70 Footprint (Reference) .035 .037 .039 0.90 0.95 1.00 Foot Angle F φ 6 0 Lead Thickness c .004 .006 .008 0.10 0.15 0.20 Lead Width B α .010 .012 .016 0.25 0.30 0.40 Mold Draft Angle Top Mold Draft Angle Bottom β 0 6 7 7 7 7 *Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. Drawing No. C04-111 21668A-page 22 2002 Microchip Technology Inc. MCP6141/2/3/4 14-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A2 A L c A1 β eB B1 p B Units Dimension Limits n p MIN INCHES* NOM 14 .100 .155 .130 MAX MILLIMETERS NOM 14 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 18.80 19.05 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN Number of Pins Pitch Top to Seating Plane A .140 .170 Molded Package Thickness A2 .115 .145 Base to Seating Plane A1 .015 Shoulder to Shoulder Width E .300 .313 .325 Molded Package Width E1 .240 .250 .260 Overall Length D .740 .750 .760 Tip to Seating Plane L .125 .130 .135 c Lead Thickness .008 .012 .015 Upper Lead Width B1 .045 .058 .070 Lower Lead Width B .014 .018 .022 Overall Row Spacing § eB .310 .370 .430 α Mold Draft Angle Top 5 10 15 β Mold Draft Angle Bottom 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-005 2002 Microchip Technology Inc. MAX 4.32 3.68 8.26 6.60 19.30 3.43 0.38 1.78 0.56 10.92 15 15 21668A-page 23 MCP6141/2/3/4 14-Lead Plastic Small Outline (SL) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 α h 45° c A2 A φ A1 L β Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .150 .337 .010 .016 0 .008 .014 0 0 INCHES* NOM 14 .050 .061 .056 .007 .236 .154 .342 .015 .033 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .347 .020 .050 8 .010 .020 15 15 MILLIMETERS NOM 14 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 5.99 3.81 3.90 8.56 8.69 0.25 0.38 0.41 0.84 0 4 0.20 0.23 0.36 0.42 0 12 0 12 MIN MAX 1.75 1.55 0.25 6.20 3.99 8.81 0.51 1.27 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-065 21668A-page 24 2002 Microchip Technology Inc. MCP6141/2/3/4 14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP) E E1 p D 2 1 n B α A c φ β A1 L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Molded Package Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D L φ c B1 α β MIN .033 .002 .246 .169 .193 .020 0 .004 .007 0 0 INCHES NOM 14 .026 .035 .004 .251 .173 .197 .024 4 .006 .010 5 5 A2 MAX .043 .037 .006 .256 .177 .201 .028 8 .008 .012 10 10 MILLIMETERS* NOM MAX 14 0.65 1.10 0.85 0.90 0.95 0.05 0.10 0.15 6.25 6.38 6.50 4.30 4.40 4.50 4.90 5.00 5.10 0.50 0.60 0.70 0 4 8 0.09 0.15 0.20 0.19 0.25 0.30 0 5 10 0 5 10 MIN Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005” (0.127mm) per side. JEDEC Equivalent: MO-153 Drawing No. C04-087 2002 Microchip Technology Inc. 21668A-page 25 MCP6141/2/3/4 NOTES: 21668A-page 26 2002 Microchip Technology Inc. MCP6141/2/3/4 ON-LINE SUPPORT Microchip provides on-line support on the Microchip World Wide Web site. The web site is used by Microchip as a means to make files and information easily available to customers. To view the site, the user must have access to the Internet and a web browser, such as Netscape® or Microsoft® Internet Explorer. Files are also available for FTP download from our FTP site. Connecting to the Microchip Internet Web Site The Microchip web site is available at the following URL: www.microchip.com SYSTEMS INFORMATION AND UPGRADE HOT LINE The Systems Information and Upgrade Line provides system users a listing of the latest versions of all of Microchip's development systems software products. Plus, this line provides information on how customers can receive the most current upgrade kits.The Hot Line Numbers are: 1-800-755-2345 for U.S. and most of Canada, and 1-480-792-7302 for the rest of the world. 092002 The file transfer site is available by using an FTP service to connect to: ftp://ftp.microchip.com The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is: • Latest Microchip Press Releases • Technical Support Section with Frequently Asked Questions • Design Tips • Device Errata • Job Postings • Microchip Consultant Program Member Listing • Links to other useful web sites related to Microchip Products • Conferences for products, Development Systems, technical information and more • Listing of seminars and events 2002 Microchip Technology Inc. DS21668A-page 27 MCP6141/2/3/4 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. To: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Device: MCP6141/2/3/4 Y N Literature Number: DS21668A Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21668A-page 28 2002 Microchip Technology Inc. MCP6141/2/3/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device Device: X /XX Temperature Range Package MCP6141: CMOS Single Op Amp MCP6141T: CMOS Single Op Amp (Tape and Reel for SOIC, MSOP) MCP6142: CMOS Dual Op Amp MCP6142T: CMOS Dual Op Amp (Tape and Reel for SOIC and TSSOP) MCP6143: CMOS Single Op Amp w/CS Function MCP6143T: CMOS Single Op Amp w/CS Function (Tape and Reel for SOIC and MSOP) MCP6144: CMOS Quad Op Amp MCP6144T: CMOS Quad Op Amp (Tape and Reel for SOIC and TSSOP) Temperature Range: I = -40°C to +85°C Package: MS P SN SL ST = = = = = Plastic MSOP, 8-lead Plastic DIP (300 mil Body), 8-lead, 14-lead Plastic SOIC (150 mil Body), 8-lead Plastic SOIC (150 mil Body), 14-lead Plastic TSSOP (4.4mm Body), 14-lead Examples: a) MCP6141-I/P: PDIP package. Industrial temperature, b) MCP6141T-I/SN: Tape and Reel, Industrial temperature, SOIC package. a) MCP6142-I/SN: SOIC package. Industrial temperature, b) MCP6142-I/MS: MSOP package. Industrial temperature, a) MCP6143-I/MS: MSOP package. Industrial temperature, b) MCP6143-I/P: PDIP package. Industrial temperature, a) MCP6144-I/SL: SIOC package. Industrial temperature, b) MCP6144T-I/ST: Tape and Reel, Industrial temperature, TSSOP package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21668A-page 29 MCP6141/2/3/4 NOTES: DS21668A-page 30 2002 Microchip Technology Inc. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, K EELOQ, MPLAB, PIC, PICmicro, PICSTART and PRO MATE are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21668A - page 31 M WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 San Jose China - Hong Kong SAR Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 New York Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 08/01/02 DS21668A-page 32 2002 Microchip Technology Inc.