BC807-25W, BC807-40W General Purpose Transistors PNP Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage VCBO −50 V Emitter − Base Voltage VEBO −5.0 V IC −500 mAdc 2 Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD SC−70 CASE 419 STYLE 3 460 mW RqJA 272 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 3 1 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM 5x M G G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm2. 1 5x M G = Device Code x = B or C = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 4 1 Publication Order Number: BC807−25W/D BC807−25W, BC807−40W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −50 − − V Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA mA 160 250 40 − − − 400 600 − OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS hFE DC Current Gain (IC = −100 mA, VCE = −1.0 V) BC807−25, SBC807−25 BC807−40, SBC807−40 (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, VCE = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping† SC−70 (Pb−Free) 3000 / Tape & Reel 5B BC807−25WT1G SBC807−25T1G* BC807−25WT3G 10,000 / Tape & Reel BC807−40WT1G SBC807−40WT1G* SC−70 (Pb−Free) 5C 3000 / Tape & Reel 10,000 / Tape & Reel BC807−40WT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 2 BC807−25W, BC807−40W TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W 500 1 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 400 25°C 300 200 −55°C 100 0 150°C 25°C −55°C 0.1 0.01 0.001 0.01 1 0.1 0.001 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) Figure 5. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 3 1 BC807−25W, BC807−40W VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 6. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 7. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitances http://onsemi.com 4 -100 BC807−25W, BC807−40W TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W 1000 1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 900 150°C 800 700 600 500 25°C 400 300 −55°C 200 100 0 150°C 25°C −55°C 0.1 0.01 0.001 0.01 1 0.1 0.001 0.1 1 IC, COLLECTOR CURRENT (A) Figure 9. DC Current Gain vs. Collector Current Figure 10. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 13. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 1000 1 BC807−25W, BC807−40W VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 14. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 15. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 16. Capacitances http://onsemi.com 6 -100 BC807−25W, BC807−40W TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W IC, COLLECTOR CURRENT (A) 1 1 mS 1S 100 mS 0.1 10 mS Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Rthja(t), TRANSIENT THERMAL RESPONSE (°C/W) Figure 17. Safe Operating Area 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 18. Thermal Response http://onsemi.com 7 1 10 100 1000 BC807−25W, BC807−40W PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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