Anachip ASB0340BD Smd schottky barrier diode Datasheet

ASB0320/30/40
SMD Schottky Barrier Diode
Features
General Description
IO = 350mA
0603(1608)
VR = 20V to 40V
0.071(1.80)
0.063(1.60)
- Low forward voltage
0.039(1.00)
0.031(0.80)
- Designed for mounting on small surface.
- Extremely thin package.
0.033(0.85)
0.027(0.70)
- Majority carrier conduction.
- Lead-free device
0.010(0.25)Typ.
0.012(0.30)Typ.
0.014(0.35)Typ.
Dimensions in inches and (millimeter)
P+
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Mechanical Data
- Case : 0603(1608) 1005(2512) standard package,
0.035(0.90)
0.027(0.70)
molded plastic.
0.014(0.35)Typ.
- Terminals : Gold plated, solderable per
MIL-STD-750, method 2026.
0.012(0.30)Typ.
- Polarity : Indicated by cathode band.
0.014(0.35)Typ.
- Mounting position : Any.
- Weight : BD:0.003gram (approximately)
Dimensions in inches and (millimeter)
BF:0.006gram (approximately)
Ordering information
A
Feature
SB : Schottky Barrier
XX 03X0 XX
Part No.
2: ASB0320
3: ASB0330
4: ASB0340
Package type
BD-0603
BF-1005
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 2, 2004
1/3
ASB0320/30/40
SMD Schottky Barrier Diode
Maximum Rating (at TA=25ºC unless otherwise noted)
Symbol
Parameter
ASB0320
ASB0330
ASB0340
Unit
VRRM, VR
Repetitive peak reverse voltage
Reverse voltage
20
30
40
V
VR(RMS)
RMS reverse voltage
14
21
28
V
IO
Average forward rectified current
350
mA
IFRM
Repetitive peak forward current
450
mA
IFSM
Forward current, surge peak 8.3 ms
single half sine-wave
1.5
A
TSTG
Storage temperature
-40 to +125
ºC
Tj
Junction temperature
-40 to +125
ºC
Electrical Characteristics (at TA=25ºC unless otherwise noted)
Symbol
Parameter
VF
Forward voltage
IR
Reverse current
CT
Capacitance between terminals
Trr
Reverse recovery time
ASB0320
ASB0330
ASB0340
Conditions
Min.
Typ.
Max.
IF=20mA
-
-
0.37
IF=200mA
-
-
0.6
VR=10V
VR=20V
VR=30V
-
-
5
5
5
uA
-
50
-
pF
-
6.4
-
nS
f=1MHz, and 0 VDC
reverse voltage
IF=IR=10mA, Irr=0.1 × IR,
RL=100 ohm
Anachip Corp.
www.anachip.com.tw
Unit
V
Rev. 1.0 Aug 2, 2004
2/3
ASB0320/30/40
SMD Schottky Barrier Diode
Rating And Characteristic Curves
Fig. 1 – Forward characteristics
Fig. 2 – Capacitance between terminals
characteristics
Fig. 3 – Current derating curve
Marking Information
BH
ASB0320
BJ
ASB0330
BK
ASB0340
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 2, 2004
3/3
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