EMF20/UMF20N Transistors Power management (dual transistors) EMF20/UMF20N 2SC4617and DTC144E are housed independently in a EMT6 or UMT6 package. zApplication Power management circuit zExternal dimensions (Units : mm) 0.22 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (4) (3) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 EMF20 ROHM : EMT6 zStructure Silicon epitaxial planar transistor Each lead has same dimensions Abbreviated symbol : F20 1.3 0.65 (1) 2.0 (3) (2) (4) (6) (5) 0.2 zEquivalent circuits 0.65 UMF20N 1.25 (3) (2) (1) 0.1Min. R2 (4) ROHM : UMT6 EIAJ : SC-88 (5) 0.9 Tr1 R1 0∼0.1 DTr2 0.7 0.15 2.1 Each lead has same dimensions (6) Abbreviated symbol :F20 R1=47kΩ R2=47kΩ zPackage, marking, and packaging specifications Type EMF20 UMF20N Package EMT6 UMT6 Marking F20 F20 Code T2R TR Basic ordering unit (pieces) 8000 3000 1/4 EMF20/UMF20N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Parameter Collector current IC 150 mA Power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C ∗ ∗ 120mW per element must not be exceeded. DTr2 Limits Parameter Symbol 50 VCC Supply voltage −10~+40 VIN Input voltage 100 IC Collector current 30 IO Output current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55 to +150 Range of storage temperature Unit V V mA mA mW C C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA ICBO − − 0.1 µA VCB=60V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IEBO − − 0.1 µA VEB=7V VCE (sat) − − 0.4 V IC/IB=50mA/5mA hFE 180 − 390 − VCE=6V, IC=1mA fT − 180 − Cob − 2 3.5 MHz VCE=12V, IE=−2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 20 Typ. − − 100 − − − Max. 0.5 − 300 180 500 − Unit V V mV µA nA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA fT − 250 − MHz VCE=10V, IE=−5mA, f=100MHz ∗ R1 R2/R1 32.9 0.8 47 1.0 61.1 1.2 kΩ − − − ∗Characteristics of built-in transistor. 2/4 EMF20/UMF20N Transistors zElectrical characteristic curves Tr1 COLLECTOR CURRENT : IC (mA) 2 1 25˚C −55˚C 5 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA 0 BASE TO EMITTER VOLTAGE : VBE (V) 1.2 500 Ta=100˚C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.8 Ta=25˚C VCE=5V 3V 1V 200 100 50 10 0.2 VCE=5V −55˚C 100 50 1 2 5 10 20 10 0.2 50 100 200 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( I ) 2 5 10 20 50 100 200 0.5 IC/IB=10 0.2 0.1 Ta=100˚C 25˚C −55˚C 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current ( II ) 12µA 4 9µA 6µA 2 3µA IB=0A 0 0 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II ) Ta=25˚C 0.5 0.2 0.1 IC/IB=50 0.05 20 10 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( II ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C 1 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) 0.5 0.5 18µA 15µA 2.0 25˚C 200 COLLECTOR CURRENT : IC (mA) 0.01 0.2 1.6 20 0.5 21µA Fig.2 Grounded emitter output characteristics ( I ) 20 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.4 24µA 6 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 27µA IB=0A 0 1.6 30µA Ta=25˚C 8 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 80 10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 20 0.50mA mA 0.45mA 0.40 0.35mA Ta=25˚C COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=100˚C COLLECTOR CURRENT : IC (mA) 50 0.5 IC/IB=50 Ta=100˚C 25˚C −55˚C 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.9 Collector-emitter saturation voltage vs. collector current ( III ) 3/4 EMF20/UMF20N 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current 20 10 Ta=25˚C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.11 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) Ta=25˚C VCE=6V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) Transistors Ta=25˚C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.12 Base-collector time constant vs. emitter current DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0