Foshan MPS751 Silicon pnp transistor in a to-92 plastic package Datasheet

MPS751
Rev.E Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.
特征
/ Features
耐压高,饱和压降低,与 MPS651 互补。
High VCEO, low VCE(sat), Complementary pair with MPS651.
用途
/
Applications
用于一般放大电路。
General amplifier applications.
内部等效电路
引脚排列
12
/ Equivalent Circuit
/ Pinning
3
PIN1:Collector
放大及印章代码
PIN 2:Base
PIN 3:Emitter
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MPS751
Rev.E Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-80
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-1.0
A
Collector Current – Continuous(Pulse)
ICP
-2.0
A
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=-100μA
IE=0
-80
V
VCEO
IC=-10mA
IB=0
-60
V
VEBO
IE=-10μA
IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-50V
IE=0
-100
nA
Emitter Cut-Off Current
IEBO
VEB=-4V
IC=0
-100
nA
hFE(1)
VCE=-2V
IC=-50mA
100
hFE(2)
VCE=-2V
IC=-1A
30
VCE(sat)
IC=-500mA
IB=-50mA
-0.15
-0.5
V
Base to Emitter Saturation Voltage VBE(sat)
IC=-500mA
IB=-50mA
-0.85
-1.2
V
Base to Emitter On Voltage
IC=-1A
IC=-50mA
f=100MHz
VCE=-2V
VCE=-10V
-1.0
V
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
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VBE(on)
fT
320
150
MHz
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MPS751
Rev.E Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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MPS751
Rev.E Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MPS751
Rev.E Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
751
****
说明:
BR:  

为公司代码
751:

为型号代码
****:

为生产批号代码,随生产批号变化。
Note:
BR:
Company Code.
751:
Product Type.
****:
Lot No. Code,code change with Lot No.
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MPS751
Rev.E Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
散件包装
Units 包装数量
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Dimension
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
包装尺寸
Inner Box 盒
(unit:mm3)
Outer Box 箱
1,000
10
10,000
5
50,000
135×190
237×172×102
560×245×195
1,000
10
10,000
10
100,000
135×190
237×172×102
560×245×375
Units/tape
只/纸带
Tape/Inner Box
纸带/盒
Rows/Inner Box
纸带层/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Inner Box 盒
3,000
1
120
10
30,000
328×230×42
/ AMMO
Package Type
封装形式
使用说明
Time:10±1 sec
/ BULK
TO-92
TO-92
Temp:270±5℃
/ Packaging SPEC.
Package Type
封装形式
编带包装
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
(unit:mm3)
Outer Box 箱
小箱 480×346×235,
大箱 547×407×268
/ Notices
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