MBR20L60CT MBRF20L60CT SWITCHMODE] Power Rectifier 60 V, 20 A http://onsemi.com Features and Benefits • • • • • SCHOTTKY BARRIER RECTIFIER 20 AMPERES 60 VOLTS Low Power Loss/High Efficiency High Surge Capacity 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection These are Pb−Free Devices 1 Applications 2, 4 • Power Supply − Output Rectification • Power Management • Instrumentation 3 MARKING DIAGRAM 4 Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube TO−220AB CASE 221A PLASTIC 1 2 AYWW B20L60G AKA 3 MAXIMUM RATINGS TO−220 FULLPAK] CASE 221D STYLE 3 Please See the Table on the Following Page 1 2 AYWW B20L60G AKA 3 A Y WW B20L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Package Shipping MBR20L60CTG TO−220AB (Pb−Free) 50 Units / Rail MBRF20L60CTG TO−220FP (Pb−Free) 50 Units / Rail Publication Order Number: MBR20L60CT/D MBR20L60CT MBRF20L60CT MAXIMUM RATINGS (Per Diode Leg) Symbol Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Value VRRM VRWM VR Average Rectified Forward Current MBR20L60CT (Rated VR) TC = 138°C MBRF20L60CT (Rated VR) TC = 123°C Per Diode Per Device Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 60 IF(AV) Unit V A 10 20 IFSM 240 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg *65 to +175 °C > 400 > 8000 V ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance MBR20L60CT − Junction−to−Case − Junction−to−Ambient − Junction−to−Case − Junction−to−Ambient MBRF20L60CT °C/W 2.3 70 5.2 75 RqJC RqJA RqJC RqJA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Typ Max 0.53 0.49 0.68 0.64 0.57 0.54 0.73 0.69 118 52 380 96 Unit V mA mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBR20L60CT MBRF20L60CT IF, AVERAGE FORWARD CURRENT (A) 100 10 125°C 150°C 85°C 1 TJ = 25°C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 85°C 150°C 1 TJ = 25°C 0.1 0 0.8 1 1.2 1.4 1.6 1.8 1.0E+00 150°C 150°C 1.0E−01 125°C 125°C 1.0E−02 1.0E−03 85°C 1.0E−03 1.0E−04 1.0E−04 TJ = 25°C 1.0E−05 TJ = 25°C 1.0E−05 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 1.0E−06 0 Figure 3. Typical Reverse Current 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 60 Figure 4. Maximum Reverse Current 6 dc IF, AVERAGE FORWARD CURRENT (A) 20 IF, AVERAGE FORWARD CURRENT (A) 0.6 Figure 2. Maximum Forward Voltage 85°C RqJC = 2.3°C/W 14 12 10 0.4 Figure 1. Typical Forward Voltage 1.0E−02 16 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E−01 18 125°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E+00 1.0E−06 10 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 100 SQUARE WAVE 8 6 4 2 0 110 115 120 125 130 135 140 145 150 155 160 RqJA = 70°C/W 5 dc 4 3 SQUARE WAVE 2 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg MBR20L60CT Figure 6. Current Derating, Ambient per Leg MBR20L60CT http://onsemi.com 3 MBR20L60CT MBRF20L60CT 6 18 RqJC = 5.2°C/W dc 16 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 20 14 12 10 SQUARE WAVE 8 6 4 2 0 80 90 100 110 120 130 140 TC, CASE TEMPERATURE (°C) 150 RqJA = 75°C/W 5 4 dc 3 2 SQUARE WAVE 1 0 160 0 40 60 80 100 120 140 TA, AMBIENT TEMPERATURE (°C) 160 Figure 8. Current Derating, Ambient per Leg MBRF20L60CT 10000 18 TJ = 150°C 16 TJ = 25°C 14 C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) Figure 7. Current Derating, Case per Leg MBRF20L60CT 20 SQUARE WAVE 12 10 8 dc 6 4 1000 100 2 0 0 2 4 6 8 10 12 14 16 18 10 20 0 10 20 30 40 50 IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 9. Forward Power Dissipation Figure 10. Capacitance 60 R(t), TRANSIENT THERMAL RESISTANCE 10 1 D= 0.5 0.2 0.1 0.05 0.1 P(pk) t1 0.01 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.01 0.1 t1, TIME (sec) 1 10 Figure 11. Thermal Response Junction−to−Case, per Leg for MBR20L60CT http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR20L60CT MBRF20L60CT 100 10 0.1 D= 0.5 0.2 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 12. Thermal Response Junction−to−Ambient, per Leg for MBR20L60CT 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 13. Thermal Response Junction−to−Case, per Leg for MBRF20L60CT 100 D= 0.5 0.2 0.1 10 1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 14. Thermal Response Junction−to−Ambient, per Leg for MBRF20L60CT http://onsemi.com 5 100 1000 MBR20L60CT MBRF20L60CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR20L60CT MBRF20L60CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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