CL03-20 120mA 20kV 100nS High Voltage Medium Current Fast Recovery Diode ----------------------------------------------------------------------------------------------------------------------------- ------INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Avalanche characteristic. 2. High current, low forward voltage. 3. High frequency, Fast recovery. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave SIZE: (Unit:mm) HVGT NAME: DO-721 anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier. 4. X-ray power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 2.10 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 20 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C -- kV Average Forward Current Maximum IFAVM TA=55°C 120 mA TOIL=55°C -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 50Hz Half-Sine Wave; 8.3mS 20 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -40~+150 °C TSTG -40~+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance TA=25°C (Unless Otherwise Specified) Symbols Condition Data value Units VFM at 25°C; at IFAVM 38 V IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 10 uA TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR 100 nS CJ at 25°C; VR=0V; f=1MHz 2.8 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2 CL03-20 120mA 20kV 100nS High Voltage Medium Current Fast Recovery Diode ----------------------------------------------------------------------------------------------------------------------------- ------Fig 1 Fig 2 Forward Current Derating Curve Reverse Recovery Measurement Waveform Typical data capture points: IF =0.5IR , IR,IRR =0.25IR IR is typically the rated average forward current maximum (IFAVM) of the D.U.T Fig 3 Non-Repetitive Surge Current Cycles (50Hz) Type Marking CL03-20 Code Cathode Mark CL03-20 HVGT GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 2 / 2