ON MBR60L45CTG Switchmodeâ ¢ power rectifier Datasheet

MBR60L45CTG,
MBR60L45WTG
SWITCHMODE™
Power Rectifier
45 V, 60 A
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Features and Benefits
•
•
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIERS
60 AMPERES, 45 VOLTS
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
60 A Total (30 A Per Diode Leg)
Guard−Ring for Stress Protection
This is a Pb−Free Device
1
2, 4
3
MARKING
DIAGRAMS
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
4
TO−220
CASE 221A
PLASTIC
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately): 1.9 Grams (TO−220)
1
2
AYWW
B60L45G
AKA
3
Weight (Approximately): 4.3 Grams (TO−247)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube for TO−220
and 30 Units Per Plastic Tube for TO−247
AYWWG
B60L45
AKA
TO−247
CASE 340L
PLASTIC
MAXIMUM RATINGS
B60L45
A
Y
WW
AKA
G
Please See the Table on the Following Page
= Device Code
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Device
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 2
1
Package
Shipping
MBR60L45CTG
TO−220
(Pb−Free)
50 Units/Rail
MBR60L45WTG
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MBR60L45CT/D
MBR60L45CTG, MBR60L45WTG
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR) TC = 145°C for MBR60L45CTG
(Rated VR) TC = 165°C for MBR60L45WTG
IF(AV)
30
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Storage Temperature
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
> 400
> 8000
V
Rating
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR60L45CTG)
(MBR60L45WTG)
− Junction−to−Case
− Junction−to−Case
RqJC
RqJC
1.9
0.59
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
(IF = 60 A, TC = 25°C)
(IF = 60 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
V
0.55
0.53
0.73
0.76
mA
1.2
275
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR60L45CTG, MBR60L45WTG
TYPICAL CHARACTERISTICS
1000
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
1000
100
100
150°C
10
25°C
125°C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
125°C
0
0.2
1.0
1.2
1.4
Figure 2. Maximum Forward Voltage
1.6
1E+00
IR, MAXIMUM REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
150°C
1E−01
125°C
1E−02
125°C
1E−02
1E−03
1E−03
1E−04
0
5
10
25°C
1E−04
25°C
15
20
25
30
35
40
45
50
1E−05
0
5
10
VR, REVERSE VOLTAGE (V)
IF, AVERAGE FORWARD CURRENT (A)
dc
40
Square Wave
30
25
20
15
10
80 90
100 110
20
25
30
35
40
45
50
Figure 4. Maximum Reverse Current
50
45
15
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
IF, AVERAGE FORWARD CURRENT (A)
0.8
Figure 1. Typical Forward Voltage
150°C
5
0
0.6
VF, MAXIMUM FORWARD VOLTAGE (V)
1E−01
35
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1E+00
1E−05
25°C
1
0.1
1.6
150°C
10
120 130 140 150 160 170 180
50
45
dc
40
Square Wave
35
30
25
20
15
10
5
0
80 90
100 110 120 130 140 150 160 170 180
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 5. Current Derating for MBR60L45CTG
Figure 6. Current Derating for MBR60L45WTG
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3
MBR60L45CTG, MBR60L45WTG
R(t) TRANSIENT THERMAL RESISTANCE
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10000
C, CAPACITANCE (pF)
PFO, AVERAGE POWER
DISSIPATION (W)
TYPICAL CHARACTERISTICS
Square Wave
dc
0
5
10
15
20
25
30
35
25°C
1000
100
40
0
5
10
15
20
25
30
35
Io, AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
40
45
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
0.01
P(pk)
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
T1, TIME (sec)
R(t) TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response
Junction−to−Case for MBR60L45CTG
1
D = 0.5
0.2
0.1
0.1
0.05
0.01
P(pk)
0.01
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
T1, TIME (sec)
Figure 10. Thermal Response
Junction−to−Case for MBR60L45WTG
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4
1
10
100
1000
MBR60L45CTG, MBR60L45WTG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
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5
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR60L45CTG, MBR60L45WTG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MBR60L45CT/D
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