MBR60L45CTG, MBR60L45WTG SWITCHMODE™ Power Rectifier 45 V, 60 A http://onsemi.com Features and Benefits • • • • • • • SCHOTTKY BARRIER RECTIFIERS 60 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device 1 2, 4 3 MARKING DIAGRAMS Applications • Power Supply − Output Rectification • Power Management • Instrumentation 4 TO−220 CASE 221A PLASTIC Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) 1 2 AYWW B60L45G AKA 3 Weight (Approximately): 4.3 Grams (TO−247) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO−220 and 30 Units Per Plastic Tube for TO−247 AYWWG B60L45 AKA TO−247 CASE 340L PLASTIC MAXIMUM RATINGS B60L45 A Y WW AKA G Please See the Table on the Following Page = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION Device © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 2 1 Package Shipping MBR60L45CTG TO−220 (Pb−Free) 50 Units/Rail MBR60L45WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR60L45CT/D MBR60L45CTG, MBR60L45WTG MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 145°C for MBR60L45CTG (Rated VR) TC = 165°C for MBR60L45WTG IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V Rating ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBR60L45CTG) (MBR60L45WTG) − Junction−to−Case − Junction−to−Case RqJC RqJC 1.9 0.59 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) (IF = 60 A, TC = 25°C) (IF = 60 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.55 0.53 0.73 0.76 mA 1.2 275 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBR60L45CTG, MBR60L45WTG TYPICAL CHARACTERISTICS 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 100 100 150°C 10 25°C 125°C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 125°C 0 0.2 1.0 1.2 1.4 Figure 2. Maximum Forward Voltage 1.6 1E+00 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 1E−01 125°C 1E−02 125°C 1E−02 1E−03 1E−03 1E−04 0 5 10 25°C 1E−04 25°C 15 20 25 30 35 40 45 50 1E−05 0 5 10 VR, REVERSE VOLTAGE (V) IF, AVERAGE FORWARD CURRENT (A) dc 40 Square Wave 30 25 20 15 10 80 90 100 110 20 25 30 35 40 45 50 Figure 4. Maximum Reverse Current 50 45 15 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 0.8 Figure 1. Typical Forward Voltage 150°C 5 0 0.6 VF, MAXIMUM FORWARD VOLTAGE (V) 1E−01 35 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1E+00 1E−05 25°C 1 0.1 1.6 150°C 10 120 130 140 150 160 170 180 50 45 dc 40 Square Wave 35 30 25 20 15 10 5 0 80 90 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 5. Current Derating for MBR60L45CTG Figure 6. Current Derating for MBR60L45WTG http://onsemi.com 3 MBR60L45CTG, MBR60L45WTG R(t) TRANSIENT THERMAL RESISTANCE 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) TYPICAL CHARACTERISTICS Square Wave dc 0 5 10 15 20 25 30 35 25°C 1000 100 40 0 5 10 15 20 25 30 35 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 7. Forward Power Dissipation Figure 8. Capacitance 40 45 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T1, TIME (sec) R(t) TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Case for MBR60L45CTG 1 D = 0.5 0.2 0.1 0.1 0.05 0.01 P(pk) 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 T1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBR60L45WTG http://onsemi.com 4 1 10 100 1000 MBR60L45CTG, MBR60L45WTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 5 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR60L45CTG, MBR60L45WTG PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE E −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 H G D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W S SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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