Kexin BAS678 High-speed diode Datasheet

Diodes
SMD Type
High-speed diode
BAS678
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High switching speed: max. 6ns
0.55
Small plastic SMD package
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Continuous reverse voltage: max. 80 V
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Repetitive peak forward current: max. 600 mA.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
repetitive peak reverse voltage
Symbol
Continuous reverse voltage
VR
IF
Note 1
IFRM
square wave; Tj =25
Non-repetitive peak forward current
Min
VRRM
Continuous forward current
Repetitive peak forward current
Conditions
IFSM
Ptot
Tstg
Junction temperature
Tj
Tmab = 25
100
V
80
V
250
mA
600
mA
9
s
A
3
s
t = 10 ms
Total power dissipation
Unit
prior to surge;
t=1
t = 100
Storage temperature
Max
1.7
250
; Note 1
-65
mW
+150
150
Note
1. Device mounted on an FR4 printed-circuit board.
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1
Diodes
SMD Type
High-speed diode
BAS678
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Symbol
Conditions
VF
IF = 200 mA;d.c. ; Note 1
1.0
V
VR = 10 V;
15
nA
VR = 75 V;
100
nA
IR
VR = 75 V; Tj = 150
Diode capacitance
Cd
Reverse recovery time
trr
f = 1 MHz; VR = 0;
when switched from IF = 400 mA to IR = 400 mA;
RL = 100
Max
Unit
50
A
2
pF
6
ns
;measured at IR = 40 mA;
2
V
thermal resistance from junction to tie-point
Rth j-tp
330
K/W
thermal resistance from junction to ambient
Rth j-a
500
K/W
Forward recovery voltage
Vf r
when switched from IF = 10 mA;tr = 20 ns;
Note
1. Tamb = 25
; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
Marking
Marking
2
Min
L52
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