GaAs Varactor Diodes Hyperabrupt ® TM MV30011 – MV34010 Features ● High Q Values for Higher Frequency Performance ● Large Tuning Ratios ● Low Reverse Current ● Gamma Values to 1.5 ● Available as Bondable Chips and as Packaged Diodes ● Available in Chip-on-Board Packaging ● Custom Designs Available Applications Description ● VCOs ● Phase-Locked Oscillators ● High Q Tunable Filters ● Phase Shifters ● Pre-Selectors Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical Vapor Deposition technique. The layers are processed at using proprietary techniques resulting in varactors with constant gamma, high Q factor and repeatable tuning curves. These varactors are available in a variety of microwave ceramic packages or bondable chips for operation from UHF to millimeter wave frequencies. Maximum Ratings Reverse Voltage Breakdown Voltage Forward Current 50 mA @ 25°C Incident Power +20 dBm @ 25°C Operating Temperature -55°C to +175°C Storage Temperature -55°C to +200°C IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. 1 The MS3000 Series of products are supplied with a RoHS complaint Gold finish . These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 – MV34010 High Q Constant Gamma Tuning Varactors (Specifications @ 25°C) Gamma = 1.25 Gamma = 0.75 Part Number CT @ 4 V ± 10% (pF)1, 3, 4 Typ. CT @2V / CT @20V5 Min. VBR @ 10 A (V) Typ. Q @ -4 V2 Part Number MV32001 0.6 2.8 22 4000 MV31001 MV32002 1.0 3.1 22 3000 MV32003 1.2 3.2 22 3000 MV32004 1.5 3.3 22 MV32005 1.8 3.4 MV32006 2.2 MV32007 2.5 MV32008 Typ. CT @2V / CT @12V5 Min. VBR @ 10 A (V) Typ. Q @ -4 V2 0.6 4.2 15 4000 MV31002 1.0 5.1 15 3000 MV31003 1.2 5.4 15 3000 3000 MV31004 1.5 5.7 15 3000 22 3000 MV31005 1.8 5.9 15 3000 3.5 22 3000 MV31006 2.2 6.2 15 3000 3.6 22 2500 MV31007 2.5 6.3 15 2000 3.0 3.6 22 2500 MV31008 3.0 6.5 15 2000 MV32009 3.6 3.7 22 2000 MV31009 3.6 6.7 15 2000 MV32010 4.5 3.8 22 1500 MV31010 4.5 6.8 15 1500 Typ. CT @2V / CT @20V5 Min. VBR @ 10 A (V) Typ. Q @ -4V2 Part Number Gamma = 1.00 Part Number MV30001 CT @4 V ± 10% (pF)1, 3, 4 0.6 Typ. CT @2V / CT @12V5 Min. VBR @ 10 A (V) Typ. Q @ -4V2 3.2 15 4000 CT @4V ± 10% (pF)1, 3, 4 CT @4 V ± 10% (pF)1, 3, 4 MV31011 0.5 5.5 22 4000 MV31012 0.7 6.5 22 4000 MV31013 1.0 7.7 22 3000 1.2 8.3 22 3000 MV30002 1.0 3.7 15 3000 MV31014 MV30003 1.2 3.8 15 3000 MV31015 1.5 9.1 22 3000 MV30004 1.5 4.0 15 3000 MV31016 1.8 9.6 22 3000 MV30005 1.8 4.1 15 3000 MV31017 2.0 9.9 22 3000 MV30006 2.2 4.2 15 3000 MV31018 2.2 10.2 22 3000 MV30007 2.5 4.3 15 2500 MV30008 3.0 4.4 15 2500 MV31019 2.7 10.8 22 2000 MV30009 3.6 4.5 15 2000 MV31020 3.3 11.3 22 2000 MV30010 4.5 4.5 15 1500 MV31021 3.7 11.5 22 2000 MV31022 4.7 12.0 22 1500 Typ. CT @2V / CT @20V5 Min. VBR @ 10 A (V) MV31023 5.6 12.3 22 1500 Typ. Q @ -4V2 MV31024 6.8 12.6 22 1500 MV31025 8.2 12.9 22 1500 MV31026 10.0 13.1 22 1500 Part Number CT @4 V ± 10% (pF)1, 3, 4 MV30011 0.6 3.9 22 4000 MV30012 1.0 4.6 22 3000 MV30013 1.2 4.9 22 3000 MV30014 1.5 5.2 22 3000 MV30015 1.8 5.4 22 3000 MV30016 2.2 5.6 22 3000 MV30017 2.5 5.8 22 2500 MV30018 3.0 6.0 22 2500 MV30019 3.6 6.1 22 2000 MV30020 4.5 6.3 22 1500 Copyright 2008 Rev: 2009-05-11 Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. Tightened tolerances available upon request. 4 Package capacitance is 0.15 pF is included in the above specification. 5 The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon package selection. 1 2 3 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GaAs Varactor Diodes Hyperabrupt ® TM MV30011 – MV34010 High Q Constant Gamma Tuning Varactors (Specifications @ 25°) Gamma = 1.50 Part Number CT @ 4 V ± 10% (pF)1, 3, 4 Typ. CT @ 2 V CT @ 12V5 Min. VBR @ 10 A (V) Typ. Q @ -4 V2 MV34001 0.5 4.5 15 3000 MV34002 1.0 5.9 15 2500 MV34003 1.8 7.1 15 2500 MV34004 2.8 7.3 15 2500 MV34005 2.2 7.4 15 1800 MV34006 2.5 7.6 15 1800 MV34007 3.0 7.9 15 1800 MV34008 3.8 8.1 15 1800 MV34009 4.5 8.3 15 1200 MV34010 10.0 8.9 15 1200 Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. Tightened tolerances available upon request. 4 Package capacitance is 0.15 pF is included in the above specification. 5 The capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon package selection. 1 2 3 Copyright 2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GaAs Varactor Diodes Hyperabrupt TM Copyright 2008 Rev: 2009-05-11 ® MV30011 – MV34010 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4