ON NYC222STT1G Sensitive gate triac Datasheet

NYC222, NYC226, NYC228
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
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SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
Features
•
•
•
•
•
Blocking Voltage to 600 V
High Surge Current − 15 A
Very Low Forward “On” Voltage at High Current
Low-Cost Surface Mount SOT−223 Package
These are Pb−Free Devices
G
A
K
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open)
NYC222
NYC226
NYC228
VDRM,
VRRM
On-State Current RMS
(180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
A
Average On−State Current,
(TC = 65°C, f = 60 Hz, Time = 1 sec)
IT(RMS)
2.0
A
ITSM
15
A
I2t
0.9
A2s
PGM
0.5
W
PG(AV)
0.1
W
IFGM
0.2
A
Peak Non-repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TA = 25°C)
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TA = 25°C)
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, TA = 25°C)
Value
Unit
V
SOT−223
CASE 318E
STYLE 11
50
400
600
AYW
22xSTG
G
1
VRGM
5.0
V
Operating Junction Temperature Range
@ Rated VRRM and VDRM
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
A
Y
W
22xST
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
x = 2, 6 or 8
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
K (Cathode)
2
A (Anode)
3
G (Gate)
4
A (Anode)
ORDERING INFORMATION
Shipping†
Device
Package
NYC222STT1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
NYC226STT1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
NYC228STT1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 1
1
Publication Order Number:
NYC222/D
NYC222, NYC226, NYC228
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted
Characteristic
RqJA
156
°C/W
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy
RqJT
25
°C/W
TL
260
°C
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
200
mA
mA
VTM
−
1.2
1.7
V
OFF CHARACTERISTICS
IDRM, IRRM
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM/VRRM; RGK = 1000 W)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(ITM = 2.2 A Peak)
Gate Trigger Current (dc) (Note 3)
(VAK = 7 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
IGT
−
−
30
−
200
500
mA
Gate Trigger Voltage (dc) (Note 3)
(VAK = 7 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
VGT
−
−
−
−
0.8
1.2
V
Gate Non−Trigger Voltage
(VAK = VDRM , RL = 100 W)
VGD
0.1
−
−
V
TC = 110°C
Holding Current
(VAK = 12 V, RGK = 1000 W)
Initiating Current = 200 mA
TC = 25°C
TC = −40°C
−
−
2.0
−
5.0
10
−
25
−
IH
mA
DYNAMIC CHARACTERISTICS
dv/dt
Critical Rate of Rise of Off−State Voltage
(TC = 110°C)
V/ms
2. Pulse Width = 1.0 ms, Duty Cycle v 1%.
3. RGK Current not included in measurement.
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
Anode +
VTM
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
on state
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
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2
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
NYC222, NYC226, NYC228
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
CURRENT DERATING
140
100
a = 180°
a = CONDUCTION
ANGLE
60
dc
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
120
100
80
60
dc
40
a = 180°
a = CONDUCTION ANGLE
20
0
0
0.2
0.4
3.0
TJ = 110°C
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
0.8
Figure 2. Maximum Ambient Temperature
5.0
2.0
0.6
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 1. Maximum Case Temperature
I T , INSTANTANEOUS ON‐STATE CURRENT (AMP)
0
140
1.5
1.0
2.0
VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
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3
2.5
1.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
NYC222, NYC226, NYC228
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
2000
5000
1000
t, TIME (ms)
Figure 4. Thermal Response
TYPICAL CHARACTERISTICS
100
I GT GATE TRIGGER CURRENT ( μA)
VAK = 7.0 V
RL = 100
0.7
0.6
0.5
0.4
0.3
-75
-50
-25
0
25
50
100 110
75
50
30
20
10
5.0
3.0
2.0
1.0
-40
-20
0
20
60
80
100 110
TJ JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage
Figure 6. Typical Gate Trigger Current
2.0
10
1.8
I H , HOLDING CURRENT (mA)
40
TJ, JUNCTION TEMPERATURE (°C)
P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.8
1.6
VAK = 12 V
RL = 100 W
30°
1.4
5.0
60°
90°
120
°
180°
1.2
1.0
dc
0.8
0.6
2.0
0.4
0.2
1.0
-40
-20
0
20
40
60
80
100 110
0
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ, JUNCTION TEMPERATURE (°C)
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
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4
1.4
1.6
NYC222, NYC226, NYC228
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
q
L
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
L1
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
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