ISSI IS61LPS51236A-200B3 256kx72,512kx36,1024kx18 18mb synchronous pipelined,single cycle deselect static ram Datasheet

IS61VPS25672A IS61LPS25672A
IS61VPS51236A IS61LPS51236A
IS61VPS102418A IS61LPS102418A
256K x 72, 512K x 36, 1024K x 18
18Mb SYNCHRONOUS PIPELINED,
SINGLE CYCLE DESELECT STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth
expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LPS: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VPS: VDD 2.5V + 5%, VDDQ 2.5V + 5%
• JEDEC 100-Pin TQFP, 119-ball PBGA, 165-ball
PBGA, and 209-ball (x72) packages
• Lead-free available
MAY 2010
DESCRIPTION
The ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,
and IS61LPS/VPS25672A are high-speed, low-power synchronous static RAMs designed to provide burstable, highperformance memory for communication and networking
applications. The IS61LPS/VPS51236A is organized as
524,288 words by 36 bits, the IS61LPS/VPS102418A is
organized as 1,048,576 words by 18 bits, and the IS61LPS/
VPS25672A is organized as 262,144 words by 72 bits.
Fabricated with ISSI's advanced CMOS technology, the
device integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). In addition, Global
Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
tKQ
t KC
Parameter
Clock Access Time
Cycle Time
Frequency
250
2.6
4
250
200
3.1
5
200
Units
ns
ns
MHz
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
1
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
BLOCK DIAGRAM
MODE
Q0
CLK
CLK
A0
A0'
BINARY
COUNTER
CE
ADV
ADSC
ADSP
Q1
A1'
256Kx72;
512Kx36;
1024Kx18
MEMORY ARRAY
A1
CLR
19/20
17/18
D
A
19/20
Q
ADDRESS
REGISTER
CE
CLK
36,
or 18
or 72
GW
BWE
BW(a-h)
x18: a,b
x36: a-d
x72: a-h
D
36,
or 18
or 72
Q
DQ(a-h)
BYTE WRITE
REGISTERS
CLK
CE
36,
or 18
or 72
2/4/8
D
CE2
CE2
Q
ENABLE
REGISTER
INPUT
REGISTERS
CLK
OUTPUT
REGISTERS
CLK
DQa - DQd
OE
CE
CLK
D
ZZ
POWER
DOWN
Q
ENABLE
DELAY
REGISTER
CLK
OE
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
165-PIN BGA
119-PIN BGA
165-Ball, 13x15 mm BGA
1mm Ball Pitch, 11x15 Ball Array
119-Ball, 14x22 mm BGA
1mm Ball Pitch, 7x17 Ball Array
BOTTOM VIEW
BOTTOM VIEW
209-BALL BGA
209-Ball, 14 mm x 22 mm BGA
1 mm Ball Pitch, 11 x 19 Ball Array
BOTTOM VIEW
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
3
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
PIN CONFIGURATION — 256K X 72, 209-Ball PBGA (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
DQg
DQg
A
CE2
ADSP
ADSC
ADV
CE2
A
DQb
DQb
B
DQg
DQg
BWc
BWg
NC
BWE
A
BWb
BWf
DQb
DQb
C
DQg
DQg
BWh
BWd
NC
CE
NC
BWe
BWa
DQb
DQb
D
DQg
DQg
VSS
NC
NC
OE
GW
NC
VSS
DQb
DQb
E
DQPg
DQPc
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPf
DQPb
F
DQc
DQc
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQf
DQf
G
DQc
DQc
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQf
DQf
H
DQc
DQc
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQf
DQf
J
DQc
DQc
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQf
DQf
K
NC
NC
CLK
NC
VSS
NC
VSS
NC
NC
NC
NC
L
DQh
DQh
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQa
DQa
M
DQh
DQh
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQa
DQa
N
DQh
DQh
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQa
DQa
P
DQh
DQh
VSS
VSS
VSS
ZZ
VSS
VSS
VSS
DQa
DQa
R
DQPd
DQPh
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPa
DQPe
T
DQd
DQd
VSS
NC
NC
MODE
NC
NC
VSS
DQe
DQe
U
DQd
DQd
NC
A
A
A
A
A
NC
DQe
DQe
V
DQd
DQd
A
A
A
A1
A
A
A
DQe
DQe
W
DQd
DQd
TMS
TDI
A
A0
A
TDO
TCK
DQe
DQe
11 x 19 Ball BGA—14 x 22 mm2 Body—1 mm Ball Pitch
PIN DESCRIPTIONS
4
Symbol
A
Pin Name
Address Inputs
Symbol
Pin Name
BWE
Byte Write Enable
A0, A1
Synchronous Burst Address Inputs
ADV
OE
Output Enable
ZZ
Power Sleep Mode
ADSP
Synchronous Burst Address
Advance
Address Status Processor
MODE
Burst Sequence Selection
ADSC
Address Status Controller
JTAG Pins
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2
Synchronous Chip Select
BWx (x=a,b,c,d
e,f,g,h)
Synchronous Byte Write
Controls
TCK, TDO
TMS, TDI
NC
DQx
DQPx
VDD
VDDQ
Vss
Ground
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V/2.5V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
119 BGA PACKAGE PIN CONFIGURATION-512K X 36 (TOP VIEW)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
2
3
4
5
6
7
VDDQ
NC
NC
DQc
DQc
VDDQ
DQc
DQc
VDDQ
DQd
DQd
VDDQ
DQd
DQd
NC
NC
VDDQ
A
A
A
DQPc
DQc
DQc
DQc
DQc
VDD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
A
A
A
Vss
Vss
Vss
BWc
Vss
NC
Vss
BWd
Vss
Vss
Vss
MODE
A
TDI
ADSP
ADSC
VDD
NC
CE
OE
ADV
GW
VDD
CLK
NC
BWE
A1*
A0*
VDD
A
TCK
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
A
A
A
DQPb
DQb
DQb
DQb
DQb
VDD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
VDDQ
NC
NC
DQb
DQb
VDDQ
DQb
DQb
VDDQ
DQa
DQa
VDDQ
DQa
DQa
NC
ZZ
VDDQ
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
OE
Pin Name
Output Enable
A0, A1
Synchronous Burst Address Inputs
ZZ
Power Sleep Mode
ADV
MODE
Burst Sequence Selection
ADSP
Synchronous Burst Address
Advance
Address Status Processor
TCK, TDO
JTAG Pins
ADSC
Address Status Controller
GW
Global Write Enable
CLK
Synchronous Clock
TMS, TDI
NC
No Connect
DQa-DQd
Data Inputs/Outputs
Output Power Supply
CE
Synchronous Chip Select
DQPa-Pd
BWx (x=a-d)
Synchronous Byte Write Controls
VDD
Power Supply
BWE
Byte Write Enable
VDDQ
Output Power Supply
Vss
Ground
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
5
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
119 BGA PACKAGE PIN CONFIGURATION
1MX18 (TOP VIEW)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
2
3
4
5
6
7
VDDQ
NC
NC
DQb
NC
VDDQ
NC
DQb
VDDQ
NC
DQb
VDDQ
DQb
NC
NC
NC
VDDQ
A
A
A
NC
DQb
NC
DQb
NC
VDD
DQb
NC
DQb
NC
DQPb
A
A
TMS
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
Vss
Vss
Vss
Vss
MODE
A
TDI
ADSP
ADSC
VDD
NC
CE
OE
ADV
GW
VDD
CLK
NC
BWE
A1*
A0*
VDD
NC
TCK
A
A
A
Vss
Vss
Vss
Vss
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
A
A
A
DQPa
NC
DQa
NC
DQa
VDD
NC
DQa
NC
DQa
NC
A
A
NC
VDDQ
NC
NC
NC
DQa
VDDQ
DQa
NC
VDDQ
DQa
NC
VDDQ
NC
DQa
NC
ZZ
VDDQ
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
OE
Pin Name
Output Enable
A0, A1
Synchronous Burst Address Inputs
ZZ
Power Sleep Mode
ADV
MODE
Burst Sequence Selection
ADSP
Synchronous Burst Address
Advance
Address Status Processor
TCK, TDO
JTAG Pins
ADSC
Address Status Controller
GW
Global Write Enable
CLK
Synchronous Clock
CE
Synchronous Chip Select
BWx (x=a,b)
Synchronous Byte Write Controls
BWE
Byte Write Enable
6
TMS, TDI
NC
No Connect
DQa-DQb
Data Inputs/Outputs
DQPa-Pb
Output Power Supply
VDD
Power Supply
VDDQ
Output Power Supply
Vss
Ground
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
165 PBGA PACKAGE PIN CONFIGURATION
512K X 36 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
B
NC
A
CE
BWc
BWb
CE2
BWE
ADSC
ADV
A
NC
CE2
BWd
BWa
CLK
GW
OE
ADSP
A
NC
C
DQPc
NC
VDDQ
Vss
Vss
Vss
Vss
Vss
VDDQ
NC
D
E
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
F
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
G
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
H
NC
Vss
NC
VDD
Vss
Vss
Vss
VDD
NC
NC
ZZ
J
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
K
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
L
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
M
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
N
DQPd
NC
VDDQ
Vss
NC
A
Vss
Vss
VDDQ
NC
DQPa
P
NC
NC
A
A
TDI
A1*
TDO
A
A
A
A
R
MODE
NC
A
A
TMS
A0*
TCK
A
A
A
A
DQPb
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
Pin Name
BWE
Byte Write Enable
A0, A1
Synchronous Burst Address Inputs
ADV
OE
Output Enable
ZZ
Power Sleep Mode
ADSP
Synchronous Burst Address
Advance
Address Status Processor
MODE
Burst Sequence Selection
ADSC
Address Status Controller
JTAG Pins
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2
Synchronous Chip Select
TCK, TDO
TMS, TDI
NC
DQx
DQPx
VDD
VDDQ
Vss
Ground
BWx (x=a,b,c,d) Synchronous Byte Write
Controls
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V/2.5V
7
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
165 PBGA PACKAGE PIN CONFIGURATION
1M X 18 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWb
NC
CE2
BWE
ADSC
ADV
A
A
B
NC
A
CE2
NC
BWa
CLK
GW
OE
ADSP
A
NC
C
NC
NC
VDDQ
Vss
Vss
Vss
Vss
Vss
VDDQ
NC
DQPa
D
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
E
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
F
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
G
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
H
NC
Vss
NC
VDD
Vss
Vss
Vss
VDD
NC
NC
ZZ
J
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
K
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
L
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
M
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
N
DQPb
NC
VDDQ
Vss
NC
A
Vss
Vss
VDDQ
NC
NC
P
NC
NC
A
A
TDI
A1*
TDO
A
A
A
A
R
MODE
NC
A
A
TMS
A0*
TCK
A
A
A
A
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
8
Symbol
A
Pin Name
Address Inputs
Symbol
BWE
Byte Write Enable
A0, A1
Synchronous Burst Address Inputs
ADV
OE
Output Enable
ZZ
Power Sleep Mode
ADSP
Synchronous Burst Address
Advance
Address Status Processor
MODE
Burst Sequence Selection
ADSC
Address Status Controller
JTAG Pins
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2
Synchronous Chip Select
BWx (x=a,b)
Synchronous Byte Write
Controls
TCK, TDO
TMS, TDI
NC
DQx
DQPx
VDD
VDDQ
Vss
Ground
Pin Name
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V/2.5V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
PIN CONFIGURATION
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-PIN TQFP
DQPc
DQPb
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
DQPa
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
A
A
A
A
A
A
A
A
A
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQPd
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
512K x 36
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
DQa-DQd
Synchronous Data Input/Output
DQPa-DQPd
Parity Data Input/Output
GW
Synchronous Global Write Enable
A
Synchronous Address Inputs
ADSC
Synchronous Controller Address
Status
MODE
Burst Sequence Mode Selection
OE
Output Enable
ADSP
Synchronous Processor Address
Status
VDD
3.3V/2.5V Power Supply
ADV
VDDQ
Synchronous Burst Address Advance
Isolated Output Buffer Supply:
3.3V/2.5V
BWa-BWd
Synchronous Byte Write Enable
Vss
Ground
BWE
Synchronous Byte Write Enable
ZZ
Snooze Enable
CE, CE2, CE2 Synchronous Chip Enable
CLK
Synchronous Clock
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
9
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
PIN CONFIGURATION
A
A
CE
CE2
NC
NC
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-PIN TQFP
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
A
A
A
A
A
A
A
A
A
NC
NC
NC
VDDQ
VSS
NC
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
NC
VDD
NC
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQPb
NC
VSS
VDDQ
NC
NC
NC
1024K x 18
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A
Synchronous Address Inputs
ADSC
Synchronous Controller Address Status
ADSP
Synchronous Processor Address Status
ADV
Synchronous Burst Address Advance
BWa-BWb
Synchronous Byte Write Enable
BWE
Synchronous Byte Write Enable
CE, CE2, CE2 Synchronous Chip Enable
CLK
Synchronous Clock
DQa-DQb
Synchronous Data Input/Output
10
DQPa-DQPb
Parity Data I/O; DQPa is parity for
DQa1-8; DQPb is parity for DQb1-8
GW
Synchronous Global Write Enable
MODE
Burst Sequence Mode Selection
OE
Output Enable
VDD
3.3V/2.5V Power Supply
VDDQ
Isolated Output Buffer Supply:
3.3V/2.5V
Vss
Ground
ZZ
Snooze Enable
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
TRUTH TABLE(1-8) (3CE option)
ADDRESS
CE
CE2
CE2
ZZ
OE
CLK
DQ
Deselect Cycle, Power-Down
None
H
X
X
L
X
L
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
L
L
X
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
L
X
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
L
H
L
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
H
L
X
X
X
L-H
High-Z
Snooze Mode, Power-Down
None
X
X
X
H
X
X
X
X
X
X
High-Z
Read Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
H
L-H
High-Z
Write Cycle, Begin Burst
External
L
L
H
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
L
L-H
Read Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
H
L-H
High-Z
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
High-Z
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
High-Z
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
High-Z
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
High-Z
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
OPERATION
ADSP ADSC
ADV WRITE
Q
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For WRITE, L means one or more byte write enable signals (BWa-h) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3. BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc. BWd enables WRITEs to DQd’s and DQPd. BWe enables WRITEs to DQe’s and DQPe. BWf enables WRITEs to DQf’s
and DQPf. BWg enables WRITEs to DQg’s and DQPg. BWh enables WRITEs to DQh’s and DQPh. DQPa-DQPh are available on the x72 version. DQPa and DQPb are available on the x18 version. DQPa-DQPd are available on the x36 version.
4. All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during the
input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
11
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
TRUTH TABLE(1-8) (1CE option)
ADDRESS CE
NEXT CYCLE
Deselected
ADSP
ADSC
ADV
WRITE
OE
DQ
None
H
X
L
X
X
X
High-Z
Read, Begin Burst
External
L
L
X
X
X
L
Q
Read, Begin Burst
External
L
L
X
X
X
H
High-Z
Write, Begin Burst
External
L
H
L
X
L
X
D
Read, Begin Burst
External
L
H
L
X
H
L
Q
Read, Begin Burst
External
L
H
L
X
H
H
High-Z
Read, Continue Burst
Next
X
H
H
L
H
L
Q
Read, Continue Burst
Next
X
H
H
L
H
H
High-Z
Read, Continue Burst
Next
H
X
H
L
H
L
Q
Read, Continue Burst
Next
H
X
H
L
H
H
High-Z
Write, Continue Burst
Next
X
H
H
L
L
X
D
Write, Continue Burst
Next
H
X
H
L
L
X
D
Read, Suspend Burst
Current
X
H
H
H
H
L
Q
Read, Suspend Burst
Current
X
H
H
H
H
H
High-Z
Read, Suspend Burst
Current
H
X
H
H
H
L
Q
Read, Suspend Burst
Current
H
X
H
H
H
H
High-Z
Write, Suspend Burst
Current
X
H
H
H
L
X
D
Write, Suspend Burst
Current
H
X
H
H
L
X
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For WRITE, L means one or more byte write enable signals (BWa-h) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3. BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc. BWd enables WRITEs to DQd’s and DQPd. BWe enables WRITEs to DQe’s and DQPe. BWf enables WRITEs to DQf’s
and DQPf. BWg enables WRITEs to DQg’s and DQPg. BWh enables WRITEs to DQh’s and DQPh. DQPa-DQPh are available on the x72 version. DQPa and DQPb are available on the x18 version. DQPa-DQPd are available on the x36 version.
4. All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during the
input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
PARTIAL TRUTH TABLE
Function
Read
Read
Write Byte 1
Write All Bytes
Write All Bytes
12
GW
BWE
BWa
BWb
BWc
BWd
BWe
BWf
BWg
BWh
H
H
H
H
L
H
L
L
L
X
X
H
L
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
TSTG
PD
IOUT
VIN, VOUT
VIN
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to Vss for I/O Pins
Voltage Relative to Vss for
for Address and Control Inputs
VDD
Voltage on VDD Supply Relative to Vss
Value
Unit
–55 to +150
°C
1.6
W
100
mA
–0.5 to VDDQ + 0.5
V
–0.5 to VDD + 0.5
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher than
maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
13
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
OPERATING RANGE (IS61LPSXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
VDD
3.3V + 5%
VDDQ
3.3V / 2.5V + 5%
–40°C to +85°C
3.3V + 5%
3.3V / 2.5V + 5%
Ambient Temperature
0°C to +70°C
VDD
2.5V + 5%
VDDQ
2.5V + 5%
–40°C to +85°C
2.5V + 5%
2.5V + 5%
Industrial
OPERATING RANGE (IS61VPSXXXXX)
Range
Commercial
Industrial
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
Symbol
Parameter
Test Conditions
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
2.5V
Min.
Max.
Min.
Max.
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
2.4
—
2.0
—
V
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
—
0.4
—
0.4
V
2.0
VDD + 0.3
1.7
VDD + 0.3
V
-0.3
0.8
-0.3
0.7
V
-5
5
-5
5
µA
-5
5
-5
5
µA
Vss ≤ VIN ≤ VDD
(1)
ILI
Input Leakage Current
ILO
Output Leakage Current Vss ≤ VOUT ≤ VDDQ,
OE = VIH
Unit
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Temp. range x18
-250
MAX
x36
x72
x18
-200
MAX
x36
x72
Unit
Symbol Parameter
Test Conditions
ICC
AC Operating
Supply Current
Device Selected,
Com.
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
450
500
450
500
600
650
425
475
425
475
550
600
mA
ISB
Standby Current
TTL Input
Device Deselected,
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
Ind.
150
150
150
150
150
150
150
150
150
150
150
150
mA
ISBI
Standby Current
CMOS Input
Device Deselected,
Com.
VDD = Max.,
Ind.
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V
f=0
110
125
110
125
110
125
110
125
110
125
110
125
mA
ISB2
Sleep Mode
ZZ>VIH
60
75
60
75
60
75
60
75
60
75
60
75
mA
Com.
Ind.
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
317 Ω
3.3V
ZO = 50Ω
Output
50Ω
1.5V
Figure 1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
OUTPUT
5 pF
Including
jig and
scope
351 Ω
Figure 2
15
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
2.5V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 2.5V
1.5 ns
1.25V
See Figures 3 and 4
2.5 I/O OUTPUT LOAD EQUIVALENT
317 Ω
2.5V
ZO = 50Ω
Output
50Ω
1.25V
Figure 3
16
OUTPUT
5 pF
Including
jig and
scope
351 Ω
Figure 4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-250
Symbol
Parameter
Min.
Max.
-200
Min.
Max.
Unit
fMAX
Clock Frequency
—
250
—
200
MHz
tKC
Cycle Time
4.0
—
5
—
ns
tKH
Clock High Time
1.7
—
2
—
ns
tKL
Clock Low Time
1.7
—
2
—
ns
Clock Access Time
—
2.6
—
3.1
ns
tKQ
(2)
tKQX
Clock High to Output Invalid
0.8
—
1.5
—
ns
(2,3)
tKQLZ
Clock High to Output Low-Z
0.8
—
1
—
ns
tKQHZ(2,3)
Clock High to Output High-Z
—
2.6
—
3.0
ns
tOEQ
Output Enable to Output Valid
—
2.8
—
3.1
ns
(2,3)
Output Enable to Output Low-Z
0
—
0
—
ns
(2,3)
tOEHZ
Output Disable to Output High-Z
—
2.6
—
3.0
ns
tAS
Address Setup Time
1.2
—
1.4
—
ns
tWS
Read/Write Setup Time
1.2
—
1.4
—
ns
tCES
Chip Enable Setup Time
1.2
—
1.4
—
ns
tAVS
Address Advance Setup Time
1.2
—
1.4
—
ns
tDS
Data Setup Time
1.2
—
1.4
—
ns
tAH
Address Hold Time
0.3
—
0.4
—
ns
tWH
Write Hold Time
0.3
—
0.4
—
ns
tCEH
Chip Enable Hold Time
0.3
—
0.4
—
ns
tAVH
Address Advance Hold Time
0.3
—
0.4
—
ns
tDH
Data Hold Time
0.3
—
0.4
—
ns
tPDS
ZZ High to Power Down
—
2
—
2
cyc
tPUS
ZZ Low to Power Down
—
2
—
2
cyc
tOELZ
Note:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
17
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
READ/WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE inactive
ADSP
tSS
tSH
ADSC initiate read
ADSC
tAVH
tAVS
Suspend Burst
ADV
tAS
Address
tAH
RD1
RD3
RD2
tWS
tWH
tWS
tWH
GW
BWE
BWx
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE Masks ADSP
CE
Unselected with CE2
CE2 and CE2 only sampled with ADSP or ADSC
CE2
CE2
tOEHZ
tOEQ
OE
DATAOUT
tKQX
tOEQX
tOELZ
High-Z
1a
2a
2b
2c
tKQLZ
2d
tKQHZ
tKQ
DATAIN
High-Z
Pipelined Read
Single Read
18
Burst Read
Unselected
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE inactive
ADSP
ADSC initiate Write
ADSC
ADV must be inactive for ADSP Write tAVS
tAVH
ADV
tAS
Address
tAH
WR1
WR3
WR2
tWS
tWH
tWS
tWH
tWS
tWH
GW
BWE
BWx
WR1
tCES
tCEH
tCES
tCEH
tCES
tCEH
tWS
tWH
WR2
WR3
CE Masks ADSP
CE
Unselected with CE2
CE2 and CE2 only sampled with ADSP or ADSC
CE2
CE2
OE
DATAOUT
High-Z
tDS
DATAIN
High-Z
Single Write
tDH
1a
BW4-BW1 only are applied to first cycle of WR2
2a
2b
2c
2d
Burst Write
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
3a
Write
Unselected
19
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Unit
ISB2
Current during SNOOZE MODE
ZZ ≥ Vih
—
60
mA
tPDS
ZZ active to input ignored
—
2
cycle
tPUS
ZZ inactive to input sampled
2
—
cycle
tZZI
ZZ active to SNOOZE current
—
2
cycle
tRZZI
ZZ inactive to exit SNOOZE current
0
—
ns
SNOOZE MODE TIMING
CLK
tPDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All Inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
Don't Care
20
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG)
TEST ACCESS PORT (TAP) - TEST CLOCK
The IS61LPS/VPSxxxxxx products have a serial boundary
scan Test Access Port (TAP) in the PBGA package only.
(The TQFP package not available.) This port operates in
accordance with IEEE Standard 1149.1-1900, but does not
include all functions required for full 1149.1 compliance.
These functions from the IEEE specification are excluded
because they place added delay in the critical speed path
of the SRAM. The TAP controller operates in a manner that
does not conflict with the performance of other devices
using 1149.1 fully compliant TAPs. The TAP operates using
JEDEC standard 2.5V I/O logic levels.
The test clock is only used with the TAP controller. All
inputs are captured on the rising edge of TCK and outputs
are driven from the falling edge of TCK.
DISABLING THE JTAG FEATURE
The SRAM can operate without using the JTAG feature. To
disable the TAP controller, TCK must be tied LOW (Vss) to
prevent clocking of the device. TDI and TMS are internally
pulled up and may be disconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left disconnected. On power-up, the device will start in a
reset state which will not interfere with the device operation.
TEST MODE SELECT (TMS)
The TMS input is used to send commands to the TAP
controller and is sampled on the rising edge of TCK. This
pin may be left disconnected if the TAP is not used. The
pin is internally pulled up, resulting in a logic HIGH level.
TEST DATA-IN (TDI)
The TDI pin is used to serially input information to the
registers and can be connected to the input of any
register. The register between TDI and TDO is chosen by
the instruction loaded into the TAP instruction register.
For information on instruction register loading, see the
TAP Controller State Diagram. TDI is internally pulled up
and can be disconnected if the TAP is unused in an
application. TDI is connected to the Most Significant Bit
(MSB) on any register.
TAP CONTROLLER BLOCK DIAGRAM
0
Bypass Register
2
1
0
Instruction Register
TDI
Selection Circuitry
Selection Circuitry
31 30 29
. . .
2
1
0
2
1
0
TDO
Identification Register
x
. . . . .
Boundary Scan Register*
TCK
TMS
TAP CONTROLLER
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
21
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
TEST DATA OUT (TDO)
The TDO output pin is used to serially clock data-out from
the registers. The output is active depending on the current
state of the TAP state machine (see TAP Controller State
Diagram). The output changes on the falling edge of TCK
and TDO is connected to the Least Significant Bit (LSB) of
any register.
PERFORMING A TAP RESET
A Reset is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. RESET may be performed while the
SRAM is operating and does not affect its operation. At
power-up, the TAP is internally reset to ensure that TDO
comes up in a high-Z state.
TAP REGISTERS
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI
pin on the rising edge of TCK and output on the TDO pin on
the falling edge of TCK.
is set LOW (VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices. The x36 configuration has a 75-bit-long
register and the x18 configuration also has a 75-bit-long
register. The boundary scan register is loaded with the
contents of the RAM Input and Output ring when the TAP
controller is in the Capture-DR state and then placed
between the TDI and TDO pins when the controller is moved
to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD
and SAMPLE-Z instructions can be used to capture the
contents of the Input and Output ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the
bumps on the SRAM package. The MSB of the register is
connected to TDI, and the LSB is connected to TDO.
Scan Register Sizes
Instruction Register
Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed
between the TDI and TDO pins. (See TAP Controller Block
Diagram) At power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the
IDCODE instruction if the controller is placed in a reset state
as previously described.
When the TAP controller is in the CaptureIR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers,
it is sometimes advantageous to skip certain states. The
bypass register is a single-bit register that can be placed
between TDI and TDO pins. This allows data to be shifted
through the SRAM with minimal delay. The bypass register
Register
Name
Bit Size
(x18)
Bit Size
(x36)
Bit Size
(x72)
Instruction
3
3
3
Bypass
1
1
1
ID
32
32
32
Boundary Scan
75
75
TBD
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded to the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP
controller is in the Shift-DR state. The ID register has vendor
code and other information described in the Identification
Register Definitions table.
IDENTIFICATION REGISTER DEFINITIONS
Instruction Field
Description
256K x 72
512K x 36
1M x 18
Revision Number (31:28)
Reserved for version number.
xxxx
xxxx
xxxx
Device Depth (27:23)
Defines depth of SRAM. 512K, 1M or 256K
00110
00111
01000
Device Width (22:18)
Defines width of the SRAM. x72, x36 or x18
00101
00100
00011
ISSI Device ID (17:12)
Reserved for future use.
xxxx
xxxxx
xxxxx
ISSI JEDEC ID (11:1)
Allows unique identification of SRAM vendor.
0011010101
00011010101
00011010101
ID Register Presence (0)
Indicate the presence of an ID register.
1
1
1
22
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
TAP INSTRUCTION SET
SAMPLE/PRELOAD
Eight instructions are possible with the three-bit instruction
register and all combinations are listed in the Instruction Code
table. Three instructions are listed as RESERVED and should
not be used and the other five instructions are described
below. The TAP controller used in this SRAM is not fully
compliant with the 1149.1 convention because some mandatory instructions are not fully implemented. The TAP
controller cannot be used to load address, data or control
signals and cannot preload the Input or Output buffers. The
SRAM does not implement the 1149.1 commands EXTEST or
INTEST or the PRELOAD portion of SAMPLE/PRELOAD; instead
it performs a capture of the Inputs and Output ring when these
instructions are executed. Instructions are loaded into the
TAP controller during the Shift-IR state when the instruction
register is placed between TDI and TDO. During this state,
instructions are shifted from the instruction register through
the TDI and TDO pins. To execute an instruction once it is
shifted in, the TAP controller must be moved into the
Update-IR state.
SAMPLE/PRELOAD is a 1149.1 mandatory instruction.
The PRELOAD portion of this instruction is not implemented, so the TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded to the
instruction register and the TAP controller is in the CaptureDR state, a snapshot of data on the inputs and output pins
is captured in the boundary scan register.
It is important to realize that the TAP controller clock
operates at a frequency up to 10 MHz, while the SRAM
clock runs more than an order of magnitude faster. Because
of the clock frequency differences, it is possible that during
the Capture-DR state, an input or output will under-go a
transition. The TAP may attempt a signal capture while in
transition (metastable state). The device will not be harmed,
but there is no guarantee of the value that will be captured
or repeatable results.
To guarantee that the boundary scan register will capture
the correct signal value, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold times (tCS and tCH). To insure that the SRAM
clock input is captured correctly, designs need a way to stop
(or slow) the clock during a SAMPLE/PRELOAD instruction. If this is not an issue, it is possible to capture all other
signals and simply ignore the value of the CLK captured in
the boundary scan register.
Once the data is captured, it is possible to shift out the data
by putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP into the Update to the Update-DR
state while performing a SAMPLE/PRELOAD instruction will
have the same effect as the Pause-DR command.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. Because EXTEST is not implemented in the TAP
controller, this device is not 1149.1 standard compliant. The
TAP controller recognizes an all-0 instruction. When an
EXTEST instruction is loaded into the instruction register,
the SRAM responds as if a SAMPLE/PRELOAD instruction
has been loaded. There is a difference between the instructions, unlike the SAMPLE/PRELOAD instruction, EXTEST
places the SRAM outputs in a High-Z state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit
code to be loaded into the instruction register. It also places
the instruction register between the TDI and TDO pins and
allows the IDCODE to be shifted out of the device when the
TAP controller enters the Shift-DR state. The IDCODE
instruction is loaded into the instruction register upon powerup or whenever the TAP controller is given a test logic reset
state.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the
bypass register is placed between the TDI and TDO pins.
The advantage of the BYPASS instruction is that it shortens
the boundary scan path when multiple devices are connected together on a board.
SAMPLE-Z
RESERVED
The SAMPLE-Z instruction causes the boundary scan
register to be connected between the TDI and TDO pins
when the TAP controller is in a Shift-DR state. It also places
all SRAM outputs into a High-Z state.
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
23
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
INSTRUCTION CODES
Code
Instruction
Description
000
EXTEST
Captures the Input/Output ring contents. Places the boundary scan register between
the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1 compliant.
001
IDCODE
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
010
SAMPLE-Z
Captures the Input/Output contents. Places the boundary scan register between TDI
and TDO. Forces all SRAM output drivers to a High-Z state.
011
RESERVED
Do Not Use: This instruction is reserved for future use.
100
SAMPLE/PRELOAD
101
RESERVED
Do Not Use: This instruction is reserved for future use.
110
RESERVED
Do Not Use: This instruction is reserved for future use.
111
BYPASS
Captures the Input/Output ring contents. Places the boundary scan register between
TDI and TDO. Does not affect the SRAM operation. This instruction does not
implement 1149.1 preload function and is therefore not 1149.1 compliant.
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
TAP CONTROLLER STATE DIAGRAM
Test Logic Reset
1
0
Run Test/Idle
1
Select DR
0
0
1
1
1
Capture DR
0
Shift DR
1
Exit1 DR
0
Select IR
0
1
Exit1 IR
0
Pause DR
0
1
0
1
24
Exit2 DR
1
Update DR
0
Capture IR
0
Shift IR
1
0
Pause IR
1
0
1
1
0
1
0
Exit2 IR
1
Update IR
0
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
TAP Electrical Characteristics Over the Operating Range(1,2)
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VOH1
Output HIGH Voltage
IOH = –2.0 mA
1.7
—
V
VOH2
Output HIGH Voltage
IOH = –100 µA
2.1
—
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
—
0.7
V
VOL2
Output LOW Voltage
IOL = 100 µA
—
0.2
V
VIH
Input HIGH Voltage
1.7
VDD +0.3
V
VIL
Input LOW Voltage
–0.3
0.7
V
IX
Input Leakage Current
–10
10
µA
VSS ≤ V I ≤ VDDQ
Notes:
1. All Voltage referenced to Ground.
2. Overshoot: VIH (AC) ≤ VDD +1.5V for t ≤ tTCYC/2,
Undershoot: VIL (AC) ≤ 0.5V for t ≤ tTCYC/2,
Power-up: VIH < 2.6V and VDD < 2.4V and VDDQ < 1.4V for t < 200 ms.
TAP AC ELECTRICAL CHARACTERISTICS(1,2) (OVER OPERATING RANGE)
Symbol Parameter
Min.
Max.
Unit
tTCYC
TCK Clock cycle time
100
—
ns
fTF
TCK Clock frequency
—
10
MHz
tTH
TCK Clock HIGH
40
—
ns
tTL
TCK Clock LOW
40
—
ns
tTMSS
TMS setup to TCK Clock Rise
10
—
ns
tTDIS
TDI setup to TCK Clock Rise
10
—
ns
tCS
Capture setup to TCK Rise
10
—
ns
tTMSH
TMS hold after TCK Clock Rise
10
—
ns
tTDIH
TDI Hold after Clock Rise
10
—
ns
tCH
Capture hold after Clock Rise
10
—
ns
tTDOV
TCK LOW to TDO valid
—
20
ns
tTDOX
TCK LOW to TDO invalid
0
—
ns
Notes:
1. Both tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
25
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
TAP AC TEST CONDITIONS (2.5V/3.3V)
Input pulse levels
TAP Output Load Equivalent
0 to 2.5V/0 to 3.0V
Input rise and fall times
1ns
Input timing reference levels
1.25V/1.5V
Output reference levels
1.25V/1.5V
Test load termination supply voltage
1.25V/1.5V
Vtrig
1.25V/1.5V
50Ω
Vtrig
TDO
Z0 = 50Ω
20 pF
GND
TAP TIMING
1
2
tTHTH
3
4
5
6
tTLTH
TCK
tTHTL
tMVTH tTHMX
TMS
tDVTH tTHDX
TDI
tTLOV
TDO
tTLOX
DON'T CARE
UNDEFINED
26
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
209 BOUNDARY SCAN ORDER (256K X 72)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
27
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
165 PBGA BOUNDARY SCAN ORDER (x 36)
Bit #
Signal Bump
Name
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
1
MODE
1R
21
DQb
11G
41
NC
1A
61
DQd
1J
2
A
6N
22
DQb
11F
42
CE2
6A
62
DQd
1K
3
A
11P
23
DQb
11E
43
BWa
5B
63
DQd
1L
4
A
8P
24
DQb
11D
44
BWb
5A
64
DQd
1M
5
A
8R
25
DQb
10G
45
BWc
4A
65
DQd
2J
6
A
9R
26
DQb
10F
46
BWd
4B
66
DQd
2K
7
A
9P
27
DQb
10E
47
CE2
3B
67
DQd
2L
8
A
10P
28
DQb
10D
48
CE
3A
68
DQd
2M
9
A
10R
29
DQb
11C
49
A
2A
69
DQd
1N
10
A
11R
30
NC
11A
50
A
2B
70
A
3P
11
ZZ
11H
31
A
10A
51
NC
1B
71
A
3R
12
DQa
11N
32
A
10B
52
DQc
1C
72
A
4R
13
DQa
11M
33
ADV
9A
53
DQc
1D
73
A
4P
14
DQa
11L
34
ADSP
9B
54
DQc
1E
74
A1
6P
15
DQa
11K
35
ADSC
8A
55
DQc
1F
75
A0
6R
16
DQa
11J
36
OE
8B
56
DQc
1G
17
DQa
10M
37
BWE
7A
57
DQc
2D
18
DQa
10L
38
GW
7B
58
DQc
2E
19
DQa
10K
39
CLK
6B
59
DQc
2F
20
DQa
10J
40
NC
11B
60
DQc
2G
28
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
165 PBGA BOUNDARY SCAN ORDER (x 18)
Bit #
Signal Bump
Name
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
1
MODE
1R
21
DQa
11G
41
NC
1A
61
DQb
1J
2
A
6N
22
DQa
11F
42
CE2
6A
62
DQb
1K
3
A
11P
23
DQa
11E
43
BWa
5B
63
DQb
1L
4
A
8P
24
DQa
11D
44
NC
5A
64
DQb
1M
5
A
8R
25
DQa
11C
45
BWb
4A
65
DQb
1N
6
A
9R
26
NC
10F
46
NC
4B
66
NC
2K
7
A
9P
27
NC
10E
47
CE2
3B
67
NC
2L
8
A
10P
28
NC
10D
48
CE
3A
68
NC
2M
9
A
10R
29
NC
10G
49
A
2A
69
NC
2J
10
A
11R
30
A
11A
50
A
2B
70
A
3P
11
ZZ
11H
31
A
10A
51
NC
1B
71
A
3R
12
NC
11N
32
A
10B
52
NC
1C
72
A
4R
13
NC
11M
33
ADV
9A
53
NC
1D
73
A
4P
14
NC
11L
34
ADSP
9B
54
NC
1E
74
A1
6P
15
NC
11K
35
ADSC
8A
55
NC
1F
75
A0
6R
16
NC
11J
36
OE
8B
56
NC
1G
17
DQa
10M
37
BWE
7A
57
DQb
2D
18
DQa
10L
38
GW
7B
58
DQb
2E
19
DQa
10K
39
CLK
6B
59
DQb
2F
20
DQa
10J
40
NC
11B
60
DQb
2G
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
29
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
ORDERING INFORMATION (3.3V core/2.5V-3.3V I/O)
Commercial Range: 0°C to +70°C
Configuration
Frequency
Order Part Number
Package
IS61LPS51236A-250TQ
IS61LPS51236A-250TQL
IS61LPS51236A-250B2
100 TQFP
100 TQFP, Lead-free
119 PBGA
IS61LPS51236A-250B3
165 PBGA
200
IS61LPS51236A-200TQ
IS61LPS51236A-200B2
IS61LPS51236A-200B3
100 TQFP
119 PBGA
165 PBGA
250
IS61LPS102418A-250TQ
IS61LPS102418A-250B2
100 TQFP
119 PBGA
IS61LPS102418A-250B3
165 PBGA
200
IS61LPS102418A-200TQ
IS61LPS102418A-200B2
IS61LPS102418A-200B3
100 TQFP
119 PBGA
165 PBGA
250
IS61LPS25672A-250B1
IS61LPS25672A-250B1L
209 PBGA
209 PBGA, Lead-free
Order Part Number
Package
250
IS61LPS51236A-250TQI
IS61LPS51236A-250B2I
IS61LPS51236A-250B3I
IS61LPS51236A-250B3LI
100 TQFP
119 PBGA
165 PBGA
165 PBGA, Lead-free
200
IS61LPS51236A-200TQI
IS61LPS51236A-200TQLI
IS61LPS51236A-200B2I
IS61LPS51236A-200B2LI
IS61LPS51236A-200B3I
IS61LPS51236A-200B3LI
100 TQFP
100 TQFP, Lead-free
119 PBGA
119 PBGA, Lead-free
165 PBGA
165 PBGA, Lead-free
250
IS61LPS102418A-250TQI
IS61LPS102418A-250TQLI
IS61LPS102418A-250B2I
IS61LPS102418A-250B3I
100 TQFP
100 TQFP, Lead-free
119 PBGA
165 PBGA
200
IS61LPS102418A-200TQI
IS61LPS102418A-200TQLI
IS61LPS102418A-200B2I
IS61LPS102418A-200B3I
100 TQFP
100 TQFP, Lead-free
119 PBGA
165 PBGA
250
IS61LPS25672A-250B1I
209 PBGA
512Kx36
250
1Mx18
256Kx72
Industrial Range: -40°C to +85°C
Configuration
Frequency
512Kx36
1Mx18
256Kx72
30
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
ORDERING INFORMATION (2.5V core/2.5V I/O)
Commercial Range: 0°C to +70°C
Configuration
Frequency
Order Part Number
Package
250
IS61VPS51236A-250TQ
IS61VPS51236A-250B2
IS61VPS51236A-250B3
IS61VPS51236A-250B3L
100 TQFP
119 PBGA
165 PBGA
165 PBGA, Lead-free
200
IS61VPS51236A-200TQ
IS61VPS51236A-200B2
IS61VPS51236A-200B3
100 TQFP
119 PBGA
165 PBGA
250
IS61VPS102418A-250TQ
IS61VPS102418A-250TQL
IS61VPS102418A-250B2
100 TQFP
100 TQFP, Lead-free
119 PBGA
IS61VPS102418A-250B3
165 PBGA
200
IS61VPS102418A-200TQ
IS61VPS102418A-200B2
IS61VPS102418A-200B3
100 TQFP
119 PBGA
165 PBGA
250
IS61VPS25672A-250B1
209 PBGA
Order Part Number
Package
250
IS61VPS51236A-250TQI
IS61VPS51236A-250B2I
IS61VPS51236A-250B3I
100 TQFP
119 PBGA
165 PBGA
200
IS61VPS51236A-200TQI
IS61VPS51236A-200TQLI
IS61VPS51236A-200B2I
IS61VPS51236A-200B3I
100 TQFP
100 TQFP, Lead-free
119 PBGA
165 PBGA
250
IS61VPS102418A-250TQI
IS61VPS102418A-250B2I
IS61VPS102418A-250B3I
100 TQFP
119 PBGA
165 PBGA
200
IS61VPS102418A-200TQI
IS61VPS102418A-200B2I
IS61VPS102418A-200B3I
100 TQFP
119 PBGA
165 PBGA
250
IS61VPS25672A-250B1I
209 PBGA
512Kx36
1Mx18
256Kx72
Industrial Range: -40°C to +85°C
Configuration
Frequency
512Kx36
1Mx18
256Kx72
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
31
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
32
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
1. CONTROLLING DIMENSION : MM .
2. Reference document : JEDEC MS-028
NOTE :
Package Outline
10/02/2008
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
33
34
Package Outline
1. CONTROLLING DIMENSION : MM .
NOTE :
08/28/2008
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
12/10/2007
Package Outline
1. Controlling dimension : mm
NOTE :
IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
35
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