IRFZ44N
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 17.5mΩ
G
ID = 49A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Units
49
35
160
94
0.63
± 20
25
9.4
5.0
-55 to + 175
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
2014-8-10
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1
Typ.
Max.
Units
–––
0.50
–––
1.5
–––
62
°C/W
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IRFZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
IGSS
Min. Typ. Max. Units
Conditions
55
––– –––
V
VGS = 0V, I D = 250µA
––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 17.5 mΩ VGS = 10V, ID = 25A
2.0
––– 4.0
V
VDS = VGS , ID = 250µA
19
––– –––
S
VDS = 25V, ID = 25A
––– ––– 25
VDS = 55V, VGS = 0V
µA
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
––– ––– 63
ID = 25A
––– ––– 14
nC
VDS = 44V
––– ––– 23
VGS = 10V, See Fig. 6 and 13
–––
12 –––
VDD = 28V
–––
60 –––
ID = 25A
ns
–––
44 –––
RG = 12Ω
–––
45 –––
VGS = 10V, See Fig. 10
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
––– 1470 –––
VGS = 0V
––– 360 –––
VDS = 25V
–––
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 530 150 mJ IAS = 25A, L = 0.47mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
49
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 25A, VGS = 0V
––– 63
95
ns
TJ = 25°C, IF = 25A
––– 170 260
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, I AS = 25A. (See Figure 12)
2014-8-10
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
2
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IRFZ44N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
100
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS = 25V
20µs PULSE WIDTH
5
6
7
8
9
10
11
100
ID = 49A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-10
10
Fig 2. Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRFZ44N
2500
VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1500
1000
Coss
500
ID = 25A
VDS = 44V
VDS = 27V
VDS = 11V
16
12
8
4
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
20
Q G , Total Gate Charge (nC)
100
100
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.6
1.2
1.8
VSD ,Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-10
1msec
0.1
2.4
100µsec
10
4
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IRFZ44N
50
VDS
VGS
40
RD
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
30
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-10
5
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IRFZ44N
300
L
VD S
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
ID
10A
18A
25A
TOP
240
BOTTOM
180
120
60
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
QG
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
2014-8-10
ID
Current Sampling Resistors
6
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IRFZ44N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
2014-8-10
7
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IRFZ44N
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
2014-8-10
8
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
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