isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS11/A DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUS11 850 BUS11A 1000 BUS11 400 BUS11A 450 UNIT V V Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS11/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUS11 VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= 0.1A ; IB= 0; L= 25mH BUS11 VBE(sat) TYP. UNIT 400 BUS11A VCE(sat) MIN V 450 IC= 3A; IB= 0.6A 1.5 B Collector-Emitter Saturation Voltage V BUS11A IC= 2.5A; IB= 0.5A 1.5 BUS11 IC= 3A; IB= 0.6A 1.4 B Base-Emitter Saturation Voltage V BUS11A IC= 2.5A; IB= 0.5A 1.4 ICES Collector Cutoff Current VCE=VCESMmax; VBE= 0 VCE= VCESMmax;VBE= 0;TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE DC Current Gain IC= 1A ; VCE= 5V 15 50 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time 1.0 μs 4.0 μs 0.8 μs For BUS11 IC= 3A ;IB1= -IB2= 0.6A For BUS11A IC= 2.5A ;IB1= -IB2= 0.5A tf Fall Time isc Website：www.iscsemi.cn