EIC FBR5004W Fast recovery bridge rectifier Datasheet

FBR5000W - FBR5010W
FAST RECOVERY
BRIDGE RECTIFIERS
BR50W
PRV : 50 - 1000 Volts
Io : 50 Amperes
0.732 (18.6)
0.692 (17.5)
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
MECHANICAL DATA :
0.042 (1.06)
0.038 (0.96)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
1.2 (30.5)
MIN.
0.310 (7.87)
0.280(7.11)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ° C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
FBR
FBR
FBR
FBR
FBR
FBR
FBR
5000W 5001W 5002W 5004W 5006W 5008W 5010W
Maximum Recurrent Peak Reverse Voltage
V RRM
50
Maximum RMS Voltage
V RMS
Maximum DC Blocking Voltage
V DC
Maximum Average Forward Current Tc = 55 °C
IF(AV)
50
A
IFSM
400
A
I t
2
664
A2S
VF
1.3
V
IR
10
µA
IR(H)
1.0
mA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at I F = 25 A
Maximum DC Reverse Current
Ta = 25 ° C
at Rated DC Blocking Voltage
Ta = 100 ° C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
T rr
RθJC
100
200
400
600
800
35
70
140
280
420
50
100
200
400
600
UNIT
200
300
1000
V
560
700
V
800
1000
V
500
TJ
- 50 to + 150
T STG
- 50 to + 150
ns
°C/W
°C
°C
1
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 01 : April 2, 2002
RATING AND CHARACTERISTIC CURVES ( FBR5000W - FBR5010W )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/200 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
50
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
40
30
20
10
Tc = 55 °C
400
300
200
100
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
CASE TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
FORWARD CURRENT, AMPERES
4
6
10
20
40
60
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
10
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
2
NUMBER OF CYCLES AT 60Hz
TJ = 25 °C
PER DIODE
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : April 2, 2002
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