BAV23CL, NSVBAV23CL Dual High Voltage Common Cathode Switching Diode Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 2 • • • • www.onsemi.com ESD Rating − Machine Model: Class C Fast Switching Speed Switching Application NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 ANODE 3 1 2 Typical Applications SOT−23 CASE 318 STYLE 9 • LCD TV • Power Supply • Industrial MARKING DIAGRAM MAXIMUM RATINGS 3 Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Non−Repetitive Peak Forward Surge Current @ t = 1.0 s @ t = 100 s @ t = 10 ms Peak Forward Surge Current Non−Repetitive Peak Per Human Body Model Per Machine Model Symbol Value Unit VR 250 V VRRM 250 V IF 400 mA IFSM 9.0 3.0 1.7 A IFM(surge) 625 mAdc HBM MM 4.0 400 kV V AA MG G 1 2 AA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping† BAV23CLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAV23CLT3G SOT−23 (Pb−Free) 10000 / Tape & Reel NSVBAV23CLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 October, 2016 − Rev. 3 1 Publication Order Number: BAV23CLT1/D BAV23CL, NSVBAV23CL THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 265 2.1 mW mW/°C SINGLE HEATED Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) RJA 472 °C/W Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 263 °C/W Thermal Reference, Junction−to−Case (Note 1) R_ψJC 289 °C/W PD 345 2.7 mW mW/°C RJA 362 °C/W Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 251 °C/W Thermal Reference, Junction−to−Case (Note 2) R_ψJC 250 °C/W PD 390 3.1 mW mW/°C RJA 321 °C/W Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 159 °C/W Thermal Reference, Junction−to−Case (Note 1) R_ψJC 138 °C/W PD 540 4.3 mW mW/°C RJA 231 °C/W Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 148 °C/W Thermal Reference, Junction−to−Case (Note 2) R_ψJC 119 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) 1. FR-4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR-4 @ 500 mm2, 2 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − 0.1 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS IR Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CT − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr − 150 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BAV23CL, NSVBAV23CL 100 Ir, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 1 −40°C 0.1 0°C 25°C 0.01 75°C 125°C 150°C 0.001 0.2 0.6 0.4 0.8 1.0 1.2 125°C 1 75°C 0.1 25°C 0.01 0°C 0.001 0.0001 1.4 150°C 10 −40°C 0 50 100 150 200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Reverse Current 250 CT, TOTAL CAPACITANCE (pF) 3.0 TA = 25°C f = 1 MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 30 25 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 4. Recovery Time Equivalent Test Circuit www.onsemi.com 3 BAV23CL, NSVBAV23CL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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