Order this document by MJE15032/D SEMICONDUCTOR TECHNICAL DATA ! . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 250 Vdc (Min) — MJE15032, MJE15033 • High Current Gain — Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc • TO–220AB Compact Package *Motorola Preferred Device 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating MJE15032 MJE15033 Unit VCEO VCB 250 Vdc 250 Vdc VEB IC 5.0 Vdc 8.0 16 Adc IB PD 2.0 Adc 50 0.40 Watts W/_C PD 2.0 0.016 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous — Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range CASE 221A–06 TO–220AB THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2.5 _C/W Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 250 — — 10 — 10 50 50 10 — — — Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) MJE15032, MJE15033 VCEO(sus) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) MJE15032, MJE15033 Vdc µAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) µAdc IEBO ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) — 0.5 Vdc Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) — 1.0 Vdc fT 30 — MHz DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) (1) Pulse Test: Pulse Width (2) fT = hfe• ftest. 1.0 0.7 0.5 2.0%. D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 300 µs, Duty Cycle 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 Figure 2. Thermal Response 2 Motorola Bipolar Power Transistor Device Data 1.0 k IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 µs 10 50 ms 250 ms 10 ms 1.0 0.1 0.01 1.0 10 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 Figure 3. MJE15032 & MJE15033 Safe Operating Area NPN — MJE15032 PNP — MJE15033 1000 1000 h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN 150°C 25°C 100 –55°C 10 1.0 150°C 100 25°C –55°C 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 Figure 5. PNP — MJE15033 VCE = 5 V DC Current Gain Figure 4. NPN — MJE15032 VCE = 5 V DC Current Gain 10 V, VOLTAGE (VOLTS) 10 V, VOLTAGE (VOLTS) 10 1.0 IC, COLLECTOR CURRENT (AMPS) –55°C 1.0 25°C 150°C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 6. NPN — MJE15032 VCE = 5 V VBE(on) Curve Motorola Bipolar Power Transistor Device Data 10 –55°C 1.0 25°C 150°C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. PNP — MJE15033 VCE = 5 V VBE(on) Curve 3 NPN — MJE15032 PNP — MJE15033 100 150°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 10 25°C 1.0 –55°C 0.1 10 25°C 1.0 –55°C 150°C 0.1 0.01 0.01 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 9. PNP — MJE15033 VCE(sat) IC/IB = 10 Figure 8. NPN — MJE15032 VCE(sat) IC/IB = 10 100 150°C 150°C 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 100 25°C 1.0 –55°C 0.1 25°C 10 –55°C 1.0 0.1 0.01 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 0.1 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 10. NPN — MJE15032 VCE(sat) IC/IB = 20 V BE, BASE EMITTER VOLTAGE (VOLTS) V BE, BASE EMITTER VOLTAGE (VOLTS) 10 –55°C 25°C 150°C 0.1 1.0 –55°C 25°C 150°C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 12. NPN — MJE15032 VBE(sat) IC/IB = 10 4 10 Figure 11. PNP — MJE15033 VCE(sat) IC/IB = 20 10 1.0 10 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 13. PNP — MJE15033 VBE(sat) IC/IB = 10 Motorola Bipolar Power Transistor Device Data 10 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data MJE15032/D