Cypress CY7C1393BV18 18-mbit ddr-ii sio sram 2-word burst architecture Datasheet

CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
18-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Features
Functional Description
• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
• 300-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Synchronous internally self-timed writes
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V - VDD)
• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
• Offered in lead-free and non lead-free packages
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configuration
The CY7C1392BV18, CY7C1992BV18, CY7C1393BV18, and
CY7C1394BV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II SIO (Double Data Rate Separate I/O)
architecture. The DDR-II SIO consists of two separate ports to
access the memory array. The Read port has dedicated Data
outputs and the Write port has dedicated Data inputs to
completely eliminate the need to “turn around’ the data bus
required with common I/O devices. Access to each port is
accomplished using a common address bus. Addresses for
Read and Write are latched on alternate rising edges of the
input (K) clock. Write data is registered on the rising edges of
both K and K. Read data is driven on the rising edges of C and
C if provided, or on the rising edge of K and K if C/C are not
provided. Each address location is associated with two 8-bit
words in the case of CY7C1392BV18, two 9-bit words in the
case of CY7C1992BV18, two 18-bit words in the case of
CY7C1393BV18, and two 36-bit words in the case of
CY7C1394BV18, that burst sequentially into or out of the
device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to
the two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR-II SIO
SRAM in the system design. Output data clocks (C/C) enable
maximum system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K/K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
CY7C1392BV18 – 2M x 8
CY7C1992BV18 – 2M x 9
CY7C1393BV18 – 1M x18
CY7C1394BV18 – 512K x 36
Selection Guide
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
Unit
Maximum Operating Frequency
300
278
250
200
167
MHz
Maximum Operating Current
600
580
550
500
450
mA
Cypress Semiconductor Corporation
Document Number: 38-05623 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 27, 2006
[+] Feedback
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Logic Block Diagram (CY7C1392BV18)
D[7:0]
8
K
CLK
Gen.
K
DOFF
1M x 8
Memory
Array
Write
Data Reg
Read Add. Decode
20
Write Add. Decode
Address
Register
A(19:0)
Write
Data Reg
1M x 8
Memory
Array
Control
Logic
Read Data Reg.
R/W
VREF
LD
NWS0
16
8
Reg.
Control
Logic
8
Reg. 8
LD
R/W
C
C
CQ
8
Reg.
NWS1
CQ
Q[7:0]
8
Logic Block Diagram (CY7C1992BV18)
D[8:0]
9
K
K
CLK
Gen.
DOFF
R/W
VREF
LD
BWS0
1M x 9
Memory
Array
Write
Data Reg
1M x 9
Memory
Array
Read Add. Decode
20
Write Add. Decode
Address
Register
A(19:0)
Write
Data Reg
Control
Logic
Read Data Reg.
18
Control
Logic
9
Reg.
9
Reg. 9
Reg.
9
Document Number: 38-05623 Rev. *C
LD
R/W
C
C
CQ
CQ
9
Q[8:0]
Page 2 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Logic Block Diagram (CY7C1393BV18)
18
19
K
CLK
Gen.
K
DOFF
R/W
VREF
LD
BWS0
Write
Data Reg
512K x 18 512K x 18
Memory
Memory
Array
Array
Read Add. Decode
Address
Register
A(18:0)
Write
Data Reg
Write Add. Decode
D[17:0]
Control
Logic
Read Data Reg.
36
CQ
CQ
18
Reg.
Control
Logic
LD
R/W
C
C
18
Reg. 18
18
Reg.
BWS1
Q[17:0]
18
Logic Block Diagram (CY7C1394BV18)
36
18
K
K
CLK
Gen.
DOFF
R/W
VREF
LD
BWS[3:0]
Write
Data Reg
128K x 36 128K x 36
Memory
Memory
Array
Array
Read Add. Decode
Address
Register
A(17:0)
Write
Data Reg
Write Add. Decode
D[35:0]
Control
Logic
Read Data Reg.
72
Control
Logic
Reg.
Reg. 36
Reg.
36
Document Number: 38-05623 Rev. *C
CQ
CQ
36
36
LD
R/W
C
C
36
Q[35:0]
Page 3 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Pin Configurations
165-ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1392BV18 (2M x 8)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/72M
A
R/W
NWS1
K
NC/144M
LD
A
NC/36M
CQ
NC
NC
NC
A
NC/288M
K
NWS0
A
NC
NC
Q3
NC
NC
NC
D4
NC
VSS
VSS
A
A
VSS
VSS
VSS
NC
VSS
A
VSS
NC
NC
D3
NC
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
NC
NC
NC
NC
VDDQ
VDD
VSS
VDDQ
D5
VREF
NC
Q5
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
NC
NC
DOFF
NC
VDD
VDD
VDD
VDD
NC
VREF
Q1
NC
NC
ZQ
D1
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
NC
NC
NC
D7
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D0
NC
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
NC
NC
CY7C1992BV18 (2M x 9)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/72M
A
R/W
NC
K
NC/144M
LD
A
NC/36M
CQ
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q3
NC
NC
NC
D4
NC
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
VSS
NC
NC
NC
NC
D3
NC
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
DOFF
NC
D5
VREF
NC
Q5
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
Q1
NC
ZQ
D1
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
NC
NC
NC
D7
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D0
NC
NC
NC
Q7
A
A
C
A
A
NC
D8
Q8
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document Number: 38-05623 Rev. *C
NC
Page 4 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Pin Configurations (continued)
165-ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1393BV18 (1M x 18)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
2
3
NC/144M NC/36M
4
5
6
7
8
9
10
11
K
NC/288M
LD
A
A
NC/72M
CQ
K
NC
NC
Q8
Q9
D9
R/W
A
BWS1
NC
NC
NC
NC
D11
D10
Q10
VSS
VSS
VSS
NC
NC
Q11
VDDQ
NC
Q12
D12
NC
D13
VREF
NC
Q13
VDDQ
D14
NC
NC
Q14
NC
Q15
D15
NC
NC
NC
D17
NC
TDO
DOFF
NC
A
VSS
BWS0
A
VSS
VSS
VSS
NC
NC
Q7
NC
D8
D7
VSS
VSS
VSS
VDDQ
NC
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
Q4
D5
ZQ
D4
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
D16
Q16
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
Q1
NC
D2
D1
NC
Q17
A
A
C
A
A
NC
D0
Q0
TCK
A
A
A
C
A
A
A
TMS
TDI
9
10
A
CY7C1394BV18 (512K x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
2
3
NC/288M NC/72M
4
5
6
7
BWS2
K
BWS1
BWS3
A
VSS
K
A
VSS
BWS0
A
VSS
Q27
Q18
D18
R/W
A
D27
D28
Q28
D20
D19
Q19
VSS
VSS
Q29
D29
Q20
VDDQ
VSS
VSS
Q30
D30
Q21
D21
VDDQ
VDD
VSS
DOFF
D31
D22
VREF
Q31
Q22
VDDQ
D23
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
Q32
D32
Q23
VDDQ
VDD
Q33
Q24
D24
VDDQ
D33
D34
Q34
D26
D25
Q25
VSS
VSS
Q35
D35
Q26
TDO
TCK
A
Document Number: 38-05623 Rev. *C
8
LD
A
11
NC/36M NC/144M
CQ
D17
Q17
Q8
VSS
VSS
D16
Q16
Q7
D15
D8
D7
VSS
VDDQ
Q15
D6
Q6
VDDQ
VDDQ
VDDQ
VDDQ
D14
Q13
VDDQ
D12
Q14
VSS
VSS
VSS
VDD
VDD
VDD
VDD
D13
VREF
Q4
Q5
D5
ZQ
D4
VSS
VDD
VDDQ
Q12
D3
Q3
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
VSS
A
VSS
A
VSS
A
VSS
VSS
D10
Q10
Q1
D9
D2
D1
A
A
C
A
A
Q9
D0
Q0
A
A
C
A
A
A
TMS
TDI
Page 5 of 27
[+] Feedback
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
InputData Input signals, sampled on the rising edge of K and K clocks during valid Write operaSynchronous tions.
CY7C1392BV18 − D[7:0]
CY7C1992BV18 − D[8:0]
CY7C1393BV18 − D[17:0]
CY7C1394BV18 − D[35:0]
LD
InputSynchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This
Synchronous definition includes address and Read/Write direction. All transactions operate on a burst of 2 data
(one period of bus activity).
NWS[1:0]
InputNibble Write Select 0, 1 − active LOW (CY7C1392BV18 only). Sampled on the rising edge of
Synchronous the K and K clocks during Write operations. Used to select which nibble is written into the device
during the current portion of the Write operations. Nibbles not written remain unaltered.
NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write
Select will cause the corresponding nibble of data to be ignored and not written into the device.
BWS[3:0]
InputByte Write Select 0, 1, 2, and 3 − active LOW. Sampled on the rising edge of the K and K clocks
Synchronous during Write operations. Used to select which byte is written into the device during the current
portion of the Write operations. Bytes not written remain unaltered.
CY7C1992BV18 − BWS0 controls D[8:0].
CY7C1393BV18 − BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1394BV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27]
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write
Select will cause the corresponding byte of data to be ignored and not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock during active Read and Write operaSynchronous tions. These address inputs are multiplexed for both Read and Write operations. Internally, the
device is organized as 2M x 8 (2 arrays each of 1M x 8) for CY7C1392BV18, 2M x 9 (2 arrays
each of 1M x 9) for CY7C1992BV18, 1M x 18 (two arrays each of 512K x 18) for CY7C1393BV18
and 1M x 36 (2 arrays each of 128K x 36) for CY7C1394BV18. Therefore only 20 address inputs
are needed to access the entire memory array of CY7C1392BV18 and CY7C1992BV18, 19
address inputs for CY7C1393BV18, and 18 address inputs for CY7C1394BV18. These inputs are
ignored when the appropriate port is deselected.
Q[x:0]
OutputData Output signals. These pins drive out the requested data during a Read operation. Valid
Synchronous data is driven out on the rising edge of both the C and C clocks during Read operations or K and
K when in single clock mode. When Read access is deselected, Q[x:0] are automatically tri-stated.
CY7C1392BV18 − Q[7:0]
CY7C1393BV18 − Q[17:0]
CY7C1394BV18 − Q[35:0]
R/W
InputSynchronous Read/Write Input: When LD is LOW, this input designates the access type (Read
Synchronous when R/W is HIGH, Write when R/W is LOW) for loaded address. R/W must meet the set-up and
hold times around edge of K.
C
InputClock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the Read data
from the device. C and C can be used together to deskew the flight times of various devices on
the board back to the controller. See application example for further details.
C
InputClock
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the Read
data from the device. C and C can be used together to deskew the flight times of various devices
on the board back to the controller. See application example for further details.
K
InputClock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the
device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated
on the rising edge of K.
K
InputClock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the
device and to drive out data through Q[x:0] when in single clock mode.
CQ
Echo Clock
CQ is referenced with respect to C. This is a free-running clock and is synchronized to the input
clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to
K. The timings for the echo clocks are shown in the AC Timing table.
Document Number: 38-05623 Rev. *C
Page 6 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Pin Definitions (continued)
Pin Name
I/O
Pin Description
CQ
Echo Clock
ZQ
Input
CQ is referenced with respect to C. This is a free-running clock and is synchronized to the input
clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to
K. The timings for the echo clocks are shown in the AC Timing table.
Output Impedance Matching Input. This input is used to tune the device outputs to the system
data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a
resistor connected between ZQ and ground. Alternately, this pin can be connected directly to
VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to
GND or left unconnected.
DOFF
Input
DLL Turn Off, active LOW. Connecting this pin to ground will turn off the DLL inside the device. The
timings in the DLL turned off operation will be different from those listed in this data sheet.
TDO
Output
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
InputReference
TDO for JTAG.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs
as well as AC measurement points.
Power Supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power Supply Power supply inputs for the outputs of the device.
Functional Overview
The CY7C1392BV18, CY7C1992BV18, CY7C1393BV18,
CY7C1394BV18 are synchronous pipelined Burst SRAMs
equipped with a DDR-II Separate I/O interface.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing
is referenced to the rising edge of the output clocks, C/C (or
K/K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input
registers controlled by the rising edge of input clocks (K and
K). All synchronous data outputs (Q[x:0]) pass through output
registers controlled by the rising edge of the output clocks, C/C
(or K/K when in single clock mode). All synchronous control
(R/W, LD, BWS[x:0]) inputs pass through input registers
controlled by the rising edge of the input clock (K).
CY7C1393BV18 is described in the following sections. The
same basic descriptions apply to CY7C1392BV18,
CY7C1992BV18, and CY7C1394BV18.
Read Operations
The CY7C1393BV18 is organized internally as two arrays of
1M x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
R/W HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to the Address inputs is
stored in the Read address register. Following the next K clock
Document Number: 38-05623 Rev. *C
rise the corresponding lowest-order 18-bit word of data is
driven onto the Q[17:0] using C as the output timing reference.
On the subsequent rising edge of C the next 18-bit data word
is driven onto the Q[17:0]. The requested data will be valid
0.45 ns from the rising edge of the output clock (C or C, or K
or K when in single clock mode, for 250-MHz and 200-MHz
devices). Read accesses can be initiated on every K clock
rise. Doing so will pipeline the data flow such that data is transferred out of the device on every rising edge of the output
clocks, C/C (or K/K when in single clock mode).
When Read access is deselected, the CY7C1393BV18 will
first complete the pending Read transactions. Synchronous
internal circuitry will automatically tri-state the outputs
following the next rising edge of the positive output clock (C).
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). On the
following K clock rise the data presented to D[17:0] is latched
and stored into the lower 18-bit Write Data register provided
BWS[1:0] are both asserted active. On the subsequent rising
edge of the negative input clock (K), the information presented
to D[17:0] is also stored into the Write Data register provided
BWS[1:0] are both asserted active. Write accesses can be
initiated on every rising edge of input clock (K). Doing so
pipelines the data flow so that 18 bits of data are written into
the device on every rising edge of both input clocks (K and K).
Page 7 of 27
[+] Feedback
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
When Write access is deselected, the device will ignore all
data inputs after the pending Write operations have been
completed.
Byte Write Operations
Byte Write operations are supported by the CY7C1393BV18.
A Write operation is initiated as described in the Write Operations section above. The bytes that are written are determined
by BWS0 and BWS1, which are sampled with each set of 18-bit
data words. Asserting the appropriate Byte Write Select input
during the data portion of a Write will allow the data being
presented to be latched and written into the device.
Deasserting the Byte Write Select input during the data portion
of a write will allow the data stored in the device for that byte
to remain unaltered. This feature can be used to simplify
Read/Modify/Write operations to a Byte Write operation.
Single Clock Mode
The CY7C1393BV18 can be used with a single clock that
controls both the input and output registers. In this mode the
device will recognize only a single pair of input clocks (K and
K) that control both the input and output registers. This
operation is identical to the operation if the device had zero
skew between the K/K and C/C clocks. All timing parameters
remain the same in this mode. To use this mode of operation,
the user must tie C and C HIGH at power-on. This function is
a strap option and not alterable during device operation. The
echo clocks are synchronized to input clocks K/K in this mode.
DDR Operation
The CY7C1393BV18 enables high-performance operation
through high clock frequencies (achieved through pipelining)
and double DDR mode of operation. If a Read occurs after a
Write cycle, address and data for the Write are stored in
registers. The write information must be stored because the
SRAM can not perform the last word Write to the array without
conflicting with the Read. The data stays in this register until
the next Write cycle occurs. On the first Write cycle after the
Read(s), the stored data from the earlier Write will be written
into the SRAM array. This is called a Posted Write.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and VSS to allow the SRAM to adjust its
output driver impedance. The value of RQ must be 5X the
value of the intended line impedance driven by the SRAM. The
allowable range of RQ to guarantee impedance matching with
a tolerance of ±15% is between 175Ω and 350Ω, with
VDDQ = 1.5V. The output impedance is adjusted every 1024
cycles upon power-up to account for drifts in supply voltage
and temperature.
Echo Clocks
Echo clocks are provided on the DDR-II to simplify data
capture on high-speed systems. Two echo clocks are
generated by the DDR-II. CQ is referenced with respect to C
and CQ is referenced with respect to C. These are
free-running clocks and are synchronized to the output clock
of the Separate I/O DDR. In the single clock mode, CQ is
generated with respect to K and CQ is generated with respect
to K. The timings for the echo clocks are shown in the AC
Timing table.
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed
to function between 80 MHz and the specified maximum clock
frequency. During power-up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K
for a minimum of 30 ns. However, it is not necessary for the
DLL to be specifically reset in order to lock the DLL to the
desired frequency. The DLL will automatically lock 1024 clock
cycles after a stable clock is presented.the DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note “DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+”.
Application Example[1]
SRAM 1
Vt
D
R
A
B
W
B
S
LD
R/W W
LDR/W
## ## ##
ZQ
Q
CQ
CQ#
C C# K K#
DATA IN
DATA OUT
Address
LD#
R/W#
BWS#
SRAM 4
R = 250 Ohms
B
W
LD R/W S
# # #
D
A
R
ZQ
Q
CQ
CQ#
C C# K K#
R = 250 Ohms
Vt
Vt
BUS
MASTER SRAM 1 Input CQ
(CPU SRAM 1 Input CQ#
SRAM 4 Input CQ
or
ASIC) SRAM 4 Input CQ#
Source K
Source K#
Delayed K
Delayed K#
R
R = 50 Ohms
Vt = VREF
Note:
1. The above application shows four DDR-II SIO being used.
Document Number: 38-05623 Rev. *C
Page 8 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Truth Table[2, 3, 4, 5, 6, 7]
Operation
K
LD
R/W
Write Cycle:
Load address; wait one cycle; input write data on
consecutive K and K rising edges.
L-H
L
L
D(A + 0) at K(t + 1) ↑
D(A + 1) at K(t + 1) ↑
Read Cycle:
Load address; wait one and a half cycle; read data
on consecutive C and C rising edges.
L-H
L
H
Q(A + 0) at C(t + 1) ↑
Q(A + 1) at C(t + 2) ↑
NOP: No Operation
L-H
H
X
High-Z
High-Z
Stopped
X
X
Previous State
Previous State
Standby: Clock Stopped
DQ
DQ
Write Cycle Descriptions (CY7C1392BV18 and CY7C1393BV18) [2, 8]
BWS0/NWS0
BWS1/NWS1
K
K
L
L
L-H
-
L
L
-
L
H
L-H
L
H
-
H
L
L-H
H
L
–
H
H
L-H
H
H
–
Comments
During the Data portion of a Write sequence:
CY7C1392BV18 − both nibbles (D[7:0]) are written into the device,
CY7C1393BV18 − both bytes (D[17:0]) are written into the device.
L-H During the Data portion of a Write sequence:
CY7C1392BV18 − both nibbles (D[7:0]) are written into the device,
CY7C1393BV18 − both bytes (D[17:0]) are written into the device.
-
During the Data portion of a Write sequence:
CY7C1392BV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
will remain unaltered,
CY7C1393BV18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
will remain unaltered.
L-H During the Data portion of a Write sequence:
CY7C1392BV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
will remain unaltered,
CY7C1393BV18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
will remain unaltered.
–
During the Data portion of a Write sequence:
CY7C1392BV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
will remain unaltered,
CY7C1393BV18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
will remain unaltered.
L-H During the Data portion of a Write sequence:
CY7C1392BV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
will remain unaltered,
CY7C1393BV18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
will remain unaltered.
–
No data is written into the devices during this portion of a Write operation.
L-H No data is written into the devices during this portion of a Write operation.
Notes:
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.
3. Device will power-up deselected and the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t+1, t + 2 and t +3 are the first, second and third clock cycles succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line
charging symmetrically.
8. Assumes a Write cycle was initiated per the Write Cycle Description Truth Table. BWS0, BWS1 in the case of CY7C1392BV18 and CY7C1393BV18 and also
BWS2, BWS3 in the case of CY7C1394BV18 can be altered on different portions of a write cycle, as long as the set-up and hold requirements are achieved.
Document Number: 38-05623 Rev. *C
Page 9 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Write Cycle Descriptions (CY7C1394BV18)[2, 8]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L-H
–
During the Data portion of a Write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L-H
L
H
H
H
–
H
L
H
H
L-H
H
L
H
H
–
H
H
L
H
L-H
H
H
L
H
–
H
H
H
L
L-H
H
H
H
L
–
H
H
H
H
L-H
H
H
H
H
–
L-H During the Data portion of a Write sequence, all four bytes (D[35:0]) are written into
the device.
-
During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] will remain unaltered.
L-H During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] will remain unaltered.
–
During the Data portion of a Write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] will remain unaltered.
L-H During the Data portion of a Write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] will remain unaltered.
–
During the Data portion of a Write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] will remain unaltered.
L-H During the Data portion of a Write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] will remain unaltered.
During the Data portion of a Write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] will remain unaltered.
L-H During the Data portion of a Write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] will remain unaltered.
–
No data is written into the device during this portion of a Write operation.
L-H No data is written into the device during this portion of a Write operation.
Write Cycle Descriptions (CY7C1992BV18)[2, 8]
BWS0
K
K
L
L-H
–
L
–
H
L-H
H
–
Comments
During the Data portion of a Write sequence, the single byte (D[8:0]) is written into the device.
L-H During the Data portion of a Write sequence, the single byte (D[8:0]) is written into the device.
–
No data is written into the device during this portion of a Write operation.
L-H No data is written into the device during this portion of a Write operation.
Document Number: 38-05623 Rev. *C
Page 10 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 1.8V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VSS) for five rising
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.
TAP Registers
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
Document Number: 38-05623 Rev. *C
TDI and TDO pins as shown in TAP Controller Block Diagram.
Upon power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices.
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and
Output ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
Page 11 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
is loaded into the instruction register upon power-up or
whenever the TAP controller is given a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
given during the “Update IR” state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will
undergo a transition. The TAP may then try to capture a signal
while in transition (metastable state). This will not harm the
device, but there is no guarantee as to the value that will be
captured. Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
EXTEST Output Bus Tri-State
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus tri-state”, is
latched into the preload register during the “Update-DR” state
in the TAP controller, it will directly control the state of the
output (Q-bus) pins, when the EXTEST is entered as the
current instruction. When HIGH, it will enable the output
buffers to drive the output bus. When LOW, this bit will place
the output bus into a High-Z condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR”, the value
loaded into that shift-register cell will latch into the preload
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
pre-set HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
Document Number: 38-05623 Rev. *C
Page 12 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
TAP Controller State Diagram[9]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
1
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
0
SHIFT-DR
0
SHIFT-IR
1
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
1
0
UPDATE-IR
1
0
Note:
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 38-05623 Rev. *C
Page 13 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
TAP Controller Block Diagram
0
Bypass Register
Selection
Circuitry
2
TDI
1
0
1
0
Selection
Circuitry
TDO
Instruction Register
31 30 29
.
.
2
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics Over the Operating Range[10, 13, 14]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 µA
1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
0.2
V
VIH
Input HIGH Voltage
0.65VDD
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.35VDD
V
IX
Input and OutputLoad Current
–5
5
µA
GND ≤ VI ≤ VDD
TAP AC Switching Characteristics Over the Operating Range [11, 12]
Parameter
Description
Min.
Max.
Unit
20
MHz
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
50
ns
Set-up Times
tTMSS
TMS Set-up to TCK Clock Rise
5
ns
tTDIS
TDI Set-up to TCK Clock Rise
5
ns
Notes:
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
11. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
12. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
13. Overshoot: VIH(AC) < VDD+0.85V (Pulse width less than tTCYC/2); Undershoot VIL(AC) > –1.5V (Pulse width less than tTCYC/2).
14. All voltage referenced to ground.
Document Number: 38-05623 Rev. *C
Page 14 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
TAP AC Switching Characteristics Over the Operating Range (continued)[11, 12]
Parameter
tCS
Description
Min.
Max.
Unit
Capture Set-up to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
0
ns
ns
TAP Timing and Test Conditions[12]
0.9V
50Ω
ALL INPUT PULSES
TDO
1.8V
Z0 = 50Ω
0.9V
CL = 20 pF
0V
(a)
GND
tTH
tTL
Test Clock
TCK
tTCYC
tTMSS
tTMSH
Test Mode Select
TMS
tTDIS
tTDIH
Test Data-In
TDI
Test Data-Out
TDO
tTDOV
Document Number: 38-05623 Rev. *C
tTDOX
Page 15 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Identification Register Definitions
Value
Instruction Field
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Description
Revision Number
(31:29)
000
000
000
000
Version number.
Cypress Device
ID (28:12)
11010100010000101
Cypress JEDEC
ID (11:1)
00000110100
00000110100
00000110100
00000110100
Allows unique
identification of
SRAM vendor.
1
1
1
1
Indicate the
presence of an
ID register.
ID Register
Presence (0)
11010100010001101 11010100010010101 11010100010100101 Defines the type
of SRAM.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the Input/Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input/Output contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the Input/Output ring contents. Places the boundary scan register between TDI and
TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM operation.
Document Number: 38-05623 Rev. *C
Page 16 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
27
11H
54
7B
81
3G
1
6P
28
10G
55
6B
82
2G
2
6N
29
9G
56
6A
83
1J
3
7P
30
11F
57
5B
84
2J
4
7N
31
11G
58
5A
85
3K
5
7R
32
9F
59
4A
86
3J
6
8R
33
10F
60
5C
87
2K
7
8P
34
11E
61
4B
88
1K
8
9R
35
10E
62
3A
89
2L
9
11P
36
10D
63
1H
90
3L
10
10P
37
9E
64
1A
91
1M
11
10N
38
10C
65
2B
92
1L
12
9P
39
11D
66
3B
93
3N
13
10M
40
9C
67
1C
94
3M
14
11N
41
9D
68
1B
95
1N
15
9M
42
11B
69
3D
96
2M
16
9N
43
11C
70
3C
97
3P
17
11L
44
9B
71
1D
98
2N
18
11M
45
10B
72
2C
99
2P
19
9L
46
11A
73
3E
100
1P
20
10L
47
Internal
74
2D
101
3R
21
11K
48
9A
75
2E
102
4R
22
10K
49
8B
76
1E
103
4P
23
9J
50
7C
77
2F
104
5P
24
9K
51
6C
78
3F
105
5N
25
10J
52
8A
79
1G
106
5R
26
11J
53
7A
80
1F
Document Number: 38-05623 Rev. *C
Page 17 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Power-Up Sequence in DDR-II SRAM[15, 16]
DDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
Power-Up Sequence
• Apply power and drive DOFF LOW (All other inputs can be
HIGH or LOW)
— Apply VDD before VDDQ
— Apply VDDQ before VREF or at the same time as VREF
DLL Constraints
• DLL uses either K or C clock as its synchronizing input.The
input should have low phase jitter, which is specified as
tKC Var
• The DLL will function at frequencies down to 80 MHz
• If the input clock is unstable and the DLL is enabled, then
the DLL may lock to an incorrect frequency, causing
unstable SRAM behavior
• After the power and clock (K, K, C, C) are stable take DOFF
HIGH
• The additional 1024 cycles of clocks are required for the
DLL to lock
~
~
Power-up Waveforms
K
K
~
~
Unstable Clock
> 1024 Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix High (or tied to VDDQ)
Notes:
15. It is recommended that the DOFF pin be pulled HIGH via a pull up resistor of 1Kohm.
16. During Power-Up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock.
Document Number: 38-05623 Rev. *C
Page 18 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015)... > 2001V
(Above which the useful life may be impaired.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied .. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +2.9V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in High-Z State .................................... –0.5V to VDDQ + 0.3V
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature
VDD[17]
VDDQ[17]
0°C to +70°C
1.8 ± 0.1V
1.4V to VDD
–40°C to +85°C
DC Input Voltage[13] ............................ –0.5V to VDDQ + 0.3V
Electrical Characteristics Over the Operating Range[14]
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Power Supply Voltage
1.7
1.8
1.9
V
VDDQ
I/O Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 18
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 19
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = −0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
VIH
Input HIGH Voltage[13]
VREF + 0.1
VDDQ + 0.3
V
VIL
Input LOW Voltage[13]
–0.3
VREF – 0.1
V
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
–5
5
µA
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
–5
5
µA
VREF
Input Reference Voltage[20]
Typical Value = 0.75V
IDD
VDD Operating Supply
VDD = Max.,IOUT = 0
mA, f = fMAX = 1/tCYC
ISB1
Automatic Power-down
Current
0.95
V
167 MHz
0.68
0.75
450
mA
200 MHz
500
mA
250 MHz
550
mA
278 MHz
580
mA
300 MHz
600
mA
Max. VDD, Both Ports 167 MHz
Deselected, VIN ≥ VIH 200 MHz
or VIN ≤ VIL,f = fMAX =
250 MHz
1/tCYC, Inputs Static
278 MHz
200
mA
220
mA
240
mA
250
mA
300 MHz
260
mA
Max.
Unit
AC Input Requirements Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
VIH
Input HIGH Voltage
VREF + 0.2
–
–
V
VIL
Input LOW Voltage
–
–
VREF – 0.2
V
Notes:
17. Power-up: Assumes a linear ramp from 0V to VDD(Min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
18. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
19. Outputs are impedance controlled. IOL=(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
20. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.
Document Number: 38-05623 Rev. *C
Page 19 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Capacitance[21]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VDD = 1.8V
VDDQ = 1.5V
165 FBGA Package
Unit
5
pF
6
pF
7
pF
Thermal Resistance[21]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Max.
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
28.51
°C/W
5.91
°C/W
AC Test Loads and Waveforms
VREF = 0.75V
VREF
0.75V
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
RL = 50Ω
VREF = 0.75V
ZQ
RQ =
250Ω
0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under
Test ZQ
5 pF
[22]
0.25V
Slew Rate = 2 V/ns
RQ =
250Ω
(a)
(b)
Notes:
21. Tested initially and after any design or process change that may affect these parameters.
22. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.
Document Number: 38-05623 Rev. *C
Page 20 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Switching Characteristics Over the Operating Range[22,23]
Cypress Consortium
Parameter Parameter
tPOWER
300 MHz
Description
VDD(Typical) to the first
Access[24]
tCYC
tKHKH
tKH
tKHKL
tKL
tKLKH
tKHKH
tKHKH
tKHCH
tKHCH
278 MHz
250 MHz
200 MHz
167 MHz
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
1
1
1
1
1
Unit
ms
K Clock and C Clock Cycle 3.30 5.25
Time
–
Input Clock (K/K and C/C) 1.32
HIGH
–
Input Clock (K/K and C/C) 1.32
LOW
1.49
–
K Clock Rise to K Clock
Rise and C to C Rise
(rising edge to rising edge)
0.0 1.45
K/K Clock Rise to C/C
Clock Rise (rising edge to
rising edge)
3.4
5.25
4.0
6.3
5.0
7.9
6.0
8.4
ns
1.4
–
1.6
–
2.0
–
2.4
–
ns
1.4
–
1.6
–
2.0
–
2.4
–
ns
1.6
–
1.8
–
2.2
–
2.7
–
ns
0.0
1.55
0.0
1.8
0.0
2.2
0.0
2.7
ns
Set-up Times
tSA
tAVKH
Address Set-up to K Clock
Rise
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tSC
tIVKH
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tSCDDR
tIVKH
Control Set-up to K Clock
Rise (LD, R/W)
Double Data Rate Control
Set-up to Clock (K, K) Rise
(BWS0, BWS1, BWS2,
BWS3)
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
tSD[25]
tDVKH
D[X:0] Set-up to Clock
(K/K) Rise
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
Hold Times
tHA
tKHAX
Address Hold after K Clock
Rise
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tHC
tKHIX
Control Hold after K Clock
Rise (LD, R/W)
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tHCDDR
tKHIX
Double Data Rate Control
Hold after Clock (K, K)
Rise (BWS0, BWS1,
BWS2, BWS3)
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
tHD
tKHDX
D[X:0] Hold after Clock
(K/K) Rise
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
Output Times
tCO
tCHQV
tDOH
tCHQX
tCCQO
tCHCQV
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
C/C Clock Rise (or K/K in
single clock mode) to Data
Valid
–0.45 – –0.45 – –0.45 – –0.45 – –0.50 –
Data Output Hold after
Output C/C Clock Rise
(Active to Active)
C/C Clock Rise to Echo
Clock Valid
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
ns
ns
ns
Notes:
23. All devices can operate at clock frequencies as low as 119 MHz. When a part with a maximum frequency above 133 MHz is operating at a lower clock frequency,
it requires the input timings of the frequency range in which it is being operated and will output data with the output timings of that frequency range.
24. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation
can be initiated.
25. For D2 data signal on CY7C1992BV18 device, tSD is 0.5 ns for 200 MHz, 250 MHz, 278 MHz and 300 MHz frequencies.
Document Number: 38-05623 Rev. *C
Page 21 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Switching Characteristics Over the Operating Range[22,23] (continued)
Cypress Consortium
Parameter Parameter
300 MHz
Description
278 MHz
250 MHz
200 MHz
167 MHz
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
Echo Clock Hold after C/C –0.45 – –0.45 – –0.45 – –0.45 – –0.50 –
Clock Rise
Echo Clock High to Data
–
0.27
–
0.27
–
0.30
–
0.35
–
0.40
Change
Unit
ns
tCQOH
tCHCQX
tCQD
tCQHQV
tCQDOH
tCQHQX
Echo Clock High to Data
Change
tCHZ
tCHQZ
ns
tCLZ
tCHQX1
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
Clock (C/C) Rise to High-Z
(Active to High-Z)[26, 27]
Clock (C/C) Rise to
–0.45 – –0.45 – –0.45 – –0.45 – –0.50 –
Low-Z[26, 27]
–0.27
–
–0.27
–
–0.30
–
–0.35
–
–0.40
–
ns
ns
ns
DLL Timing
tKC Var
tKC Var
Clock Phase Jitter
–
0.20
–
0.20
–
0.20
–
0.20
–
0.20
ns
tKC lock
tKC lock
tKC Reset
tKC Reset
DLL Lock Time (K, C)
1024
–
1024
–
1024
–
1024
–
1024
–
Cycles
K Static to DLL Reset
30
30
30
30
30
ns
Notes:
26. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
27. At any given voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
Document Number: 38-05623 Rev. *C
Page 22 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Switching Waveforms[28, 29, 30]
NOP
READ
(burst of 2)
2
1
READ
(burst of 2)
3
WRITE
(burst of 2)
5
WRITE
(burst of 2)
4
READ
(burst of 2)
6
NOP
7
8
K
tKH
tCYC
tKL
tKHKH
K
LD
t SC
tHC
R/W
A
A0
tSA
A1
A2
A3
A4
tHD
tHD
tHA
tSD
tSD
D
D20
Q00
Q
t KHCH
t
Q01
tCQD
t CLZ
Q10
D21
D31
Q11
Q40
Q41
tDOH
KHCH
tCO
D30
t CHZ
tCQDOH
C
tKH
tKL
tCYC
tKHKH
C#
tCQOH
tCCQO
CQ
tCQOH
tCCQO
CQ#
DON’T CARE
UNDEFINED
Notes:
28. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0 + 1.
29. Output are disabled (High-Z) one clock cycle after a NOP.
30. In this example, if address A2 = A1,then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram
Document Number: 38-05623 Rev. *C
Page 23 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
167
Ordering Code
CY7C1392BV18-167BZC
Package
Diagram
Operating
Range
Package Type
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1992BV18-167BZC
CY7C1393BV18-167BZC
CY7C1394BV18-167BZC
CY7C1392BV18-167BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-167BZXC
CY7C1393BV18-167BZXC
CY7C1394BV18-167BZXC
CY7C1392BV18-167BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1992BV18-167BZI
CY7C1393BV18-167BZI
CY7C1394BV18-167BZI
CY7C1392BV18-167BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-167BZXI
CY7C1393BV18-167BZXI
CY7C1394BV18-167BZXI
200
CY7C1392BV18-200BZC
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1992BV18-200BZC
CY7C1393BV18-200BZC
CY7C1394BV18-200BZC
CY7C1392BV18-200BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-200BZXC
CY7C1393BV18-200BZXC
CY7C1394BV18-200BZXC
CY7C1392BV18-200BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1992BV18-200BZI
CY7C1393BV18-200BZI
CY7C1394BV18-200BZI
CY7C1392BV18-200BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-200BZXI
CY7C1393BV18-200BZXI
CY7C1394BV18-200BZXI
250
CY7C1392BV18-250BZC
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1992BV18-250BZC
CY7C1393BV18-250BZC
CY7C1394BV18-250BZC
CY7C1392BV18-250BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-250BZXC
CY7C1393BV18-250BZXC
CY7C1394BV18-250BZXC
Document Number: 38-05623 Rev. *C
Page 24 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
250
Ordering Code
CY7C1392BV18-250BZI
Package
Diagram
Operating
Range
Package Type
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1992BV18-250BZI
CY7C1393BV18-250BZI
CY7C1394BV18-250BZI
CY7C1392BV18-250BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-250BZXI
CY7C1393BV18-250BZXI
CY7C1394BV18-250BZXI
278
CY7C1392BV18-278BZC
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1992BV18-278BZC
CY7C1393BV18-278BZC
CY7C1394BV18-278BZC
CY7C1392BV18-278BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-278BZXC
CY7C1393BV18-278BZXC
CY7C1394BV18-278BZXC
CY7C1392BV18-278BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1992BV18-278BZI
CY7C1393BV18-278BZI
CY7C1394BV18-278BZI
CY7C1392BV18-278BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-278BZXI
CY7C1393BV18-278BZXI
CY7C1394BV18-278BZXI
300
CY7C1392BV18-300BZC
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1992BV18-300BZC
CY7C1393BV18-300BZC
CY7C1394BV18-300BZC
CY7C1392BV18-300BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-300BZXC
CY7C1393BV18-300BZXC
CY7C1394BV18-300BZXC
CY7C1392BV18-300BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1992BV18-300BZI
CY7C1393BV18-300BZI
CY7C1394BV18-300BZI
CY7C1392BV18-300BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-300BZXI
CY7C1393BV18-300BZXI
CY7C1394BV18-300BZXI
Document Number: 38-05623 Rev. *C
Page 25 of 27
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CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Package Diagram
165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D
165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 MØ0.05
CAB MC
PIN 1 CORNER
Ø0.25 M C A B
Ø0.50 -0.06
(165X)
PIN 1 CORNER
1
2
1
+0.14
4
2
5
3
6
4
7
5
8
6
9
7
10
11
8
9
11
10
11
10
9
11
8
10
7
9
6
8
5
7
Ø0.50 -0.06 (165X)
4
6
1
3 +0.14
2
5
4
3
2
1A
B
A
C
B
C
B
D
C
D
C
E
D
F
1.00
A
1.00
B
F
E
G
F
G
F
H
G
H
G
J
H
K
J
L
K
M
L
N
M
P
N
P
N
R
P
R
P
7.00
7.00
14.00
D
E
14.00
15.00±0.10
E
15.00±0.10
15.00±0.10
A
15.00±0.10
3
J
H
K
J
L
K
M
L
N
M
R
R
A
A
A
1.00
5.00
A
1.00
5.00
10.00
10.00
B
B
13.00±0.10
B
13.00±0.10
B
13.00±0.10
13.00±0.10
0.15 C
1.40 MAX.
SEATING PLANE
NOTES :
NOTES
:
SOLDER
PAD TYPE
: NON-SOLDER MASK DEFINED (NSMD)
PACKAGE
WEIGHT
SOLDER
PAD: 0.475g
TYPE : NON-SOLDER MASK DEFINED (NSMD)
JEDEC REFERENCE
: MO-216
/ DESIGN 4.6C
PACKAGE WEIGHT
: 0.475g
PACKAGE
CODE
: BB0AC : MO-216 / DESIGN 4.6C
JEDEC
REFERENCE
PACKAGE CODE : BB0AC
51-85180-*A
0.35±0.06
C
0.35±0.06
0.36
0.36
SEATING PLANE
C
0.15 C
0.15(4X)
1.40 MAX.
0.53±0.05
0.53±0.05
0.25
C
0.25 C
0.15(4X)
51-85180-*A
QDR™ SRAMs and Quad Data Rate™ SRAMs comprise a new family of products developed by Cypress, Hitachi, IDT, Micron,
NEC and Samsung technology. All product and company names mentioned in this document are the trademarks of their respective
holders.
Document Number: 38-05623 Rev. *C
Page 26 of 27
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CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document History Page
Document Title: CY7C1392BV18/CY7C1992BV18/CY7C1393BV18/CY7C1394BV18 18-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
Document Number: 38-05623
REV.
ECN No.
Issue Date
Orig. of
Change
Description of Change
**
252474
See ECN
SYT
New data sheet
*A
325581
See ECN
SYT
Removed CY7C1992BV18 from the title
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for IDD and ISB1 specs
Replaced the TBDs on the Thermal Characteristics Table to ΘJA = 28.51°C/W
and ΘJC = 5.91°C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
*B
413997
See ECN
NXR
Converted from Preliminary to Final
Added CY7C1992BV18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #15, 16, 17 on page# 18
Replaced Three-state with Tri-state
Changed the description of IX from Input Load Current to Input Leakage
Current on page# 19
Modified the IDD and ISB values
Modified test condition in Footnote #18 on page# 19 from VDDQ < VDD to
VDDQ < VDD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information
*C
472384
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin can be connected directly
to VDD to Alternately, this pin can be connected directly to VDDQ
Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH,
tTDIH, tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC
Switching Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
Document Number: 38-05623 Rev. *C
Page 27 of 27
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