CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTD07N04H8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=11A RDS(ON)@VGS=4.5V, ID=9A 40V 67A 42.4A 14A 11.2A 4.7mΩ(typ) 8.0mΩ(typ) Outline DFN5×6 MTD07N04H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTD07N04H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTD07N04H8 CYStek Product Specification Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.5mH, ID=20Amps, VDD=50V (Note 2) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAS 40 ±20 67 42.4 14 11.2 200 20 EAS 100 EAR 5.7 57 36.5 2.5 1.6 -55~+150 ID IDSM PD PDSM Tj, Tstg Unit V A mJ W °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA (Note 4) Value 2.2 50 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. . 2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. . Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS MTD07N04H8 Min. Typ. Max. Unit Test Conditions 40 1.5 - 0.03 24 - 2.5 ±100 1 25 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=11A VGS=±20V VDS =40V, VGS =0V VDS =40V, VGS =0V, Tj=125°C μA CYStek Product Specification Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 3/ 9 CYStech Electronics Corp. *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 4.7 8 6 11 30.2 6.5 7.0 15.6 19.6 49.6 12.4 1514 188 119 1.7 45 24 30 75 19 1895 235 150 - 0.81 12 6.5 67 200 1.1 - mΩ VGS =10V, ID=11A VGS =4.5V, ID=9A nC VDS=20V, ID=16A, VGS=10V ns VDS=20V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=20V, f=1MHz Ω f=1MHz A V ns nC IS=10A, VGS=0V VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTD07N04H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 200 10V 9V 8V VGS=7V BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 160 VGS=6V 120 VGS=5V 80 VGS=3.5V 40 VGS=4.5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=4V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V 10 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3 R DS(ON) , Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=11A 80 60 40 20 2.5 VGS=10V, ID=11A 2 1.5 1 0.5 RDS(ON) @Tj=25°C :4.7mΩ typ 0 0 0 MTD07N04H8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C os 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 8 6 4 2 VDS=20V ID=16A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 20 24 Total Gate Charge---Qg(nC) 28 32 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 70 RDS(ON) Limit ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100μ s 100 1ms 10ms 10 100ms 1s DC 1 TC=25°C, Tj=150°, VGS=10V RθJC=2.2°C/W, Single Pulse 60 50 40 30 20 10 VGS=10V, RθJC=2.2°C/W 0 0.1 0.1 MTD07N04H8 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 3000 200 VDS=10V 2000 Power (W) ID, Drain Current (A) TJ(MAX) =150°C TC=25°C θ JC=2.2°C/W 2500 160 120 80 1500 1000 40 500 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=2.2 ° C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTD07N04H8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension Pin #1 MTD07N04H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD07N04H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 9/ 9 DFN5×6 Dimension Marking: Device Name Date Code D07 N04 8-L8-Lead ead power pakPlastic PlasticPackage Package DFN5×6 CYCYS StekPackage Package Code: Code : H8H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.40 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.055 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 4.00 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.157 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD07N04H8 CYStek Product Specification