APT10078BFLL
APT10078SFLL
1000V
POWER MOS 7
R
FREDFET
FREDFET
14A
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-247
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
0.780Ω
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10078BFLL_SFLL
UNIT
1000
Volts
Drain-Source Voltage
14
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
1
56
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
14
(Repetitive and Non-Repetitive)
1
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 7A)
TYP
MAX
UNIT
Volts
0.780
Ohms
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2006
Characteristic / Test Conditions
050-7040 Rev D
Symbol
APT10078BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 500V
tf
ID = 14A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
355
VDD = 667V VGS = 15V
75
ID = 14A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
9
RG = 1.6Ω
Eon
UNIT
pF
75
95
12
60
9
8
30
ID = 14A @ 25°C
Turn-off Delay Time
MAX
2525
430
VDD = 500V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
740
VDD = 667V VGS = 15V
ID = 14A, RG = 3Ω
95
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
14
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
56
Diode Forward Voltage
2
(VGS = 0V, IS = ID -14A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dt
UNIT
dv/
dt
5
t rr
Reverse Recovery Time
(IS = ID -14A, di/dt = 100A/µs)
Tj = 25°C
210
Tj = 125°C
710
Q rr
Reverse Recovery Charge
(IS = ID -14A, di/dt = 100A/µs)
Tj = 25°C
1.0
Tj = 125°C
3.6
IRRM
Peak Recovery Current
(IS = ID -14A, di/dt = 100A/µs)
Tj = 25°C
9.8
Tj = 125°C
14
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.25
0.7
0.20
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7040 Rev D
4-2006
0.35
0.15
0.3
0.10
t1
t2
0.05
0
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 13.27mH, RG = 25Ω, Peak IL = 14A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-14A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.30
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10078BFLL_SFLL
30
VGS =15 & 8V
Power
(watts)
0.0258
0.00295F
0.107
0.0114F
0.177
0.174F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
25
7V
6.5V
20
6V
15
10
5.5V
5
5V
Case temperature. (°C)
0
40
30
20
TJ = +125°C
10
0
TJ = +25°C
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
12
10
8
6
4
2
0
25
NORMALIZED TO
= 10V @ 0.5 I = 7A
D
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
5
10
15
20
25
30
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
I
D
= 0.5 I
D
V
GS
= 7A
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
0.0
-50
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
14
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2006
50
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7040 Rev D
ID, DRAIN CURRENT (AMPERES)
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
56
APT10078BFLL_SFLL
10,000
Ciss
10
100µS
5
1mS
1
10mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
I
D
= 14A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
60
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
td(off)
50
40
tf
V
DD
R
G
= 667V
tr and tf (ns)
40
= 3Ω
T = 125°C
J
30
L = 100µH
30
V
G
20
td(on)
0
1400
5
T = 125°C
J
DD
R
G
0
10
0
15
20
25
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
Eon
Eon
L = 100µH
E ON includes
diode reverse recovery.
800
600
400
200
800
600
400
Eoff
200
10
V
I
DD
D
= 667V
= 14A
T = 125°C
J
L = 100µH
E ON includes
Eoff
5
10
1000
= 667V
J
0
5
= 3Ω
T = 125°C
1000
tr
10
15
20
25
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
1200
0
= 667V
= 3Ω
L = 100µH
10
0
DD
R
20
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
Crss
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
20
40
60
80 100
120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
SWITCHING ENERGY (µJ)
100
10
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
4-2006
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
050-7040 Rev D
1000
15
20
25
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
diode reverse recovery.
0
5
10
15
20
25
30
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10078BFLL_SFLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
td(off)
td(on)
T 125°C
J
Drain Voltage
90%
tr
Drain Current
5%
90%
tf
10%
0
5%
10%
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7040 Rev D
0.46 (.018)
0.56 (.022) {3 Plcs}
4-2006
3.50 (.138)
3.81 (.150)