Tak Cheong MBRF10200CT 10a schottky barrier diode full pack high voltage schottky rectifier Datasheet

®
SEM ICON DU CTO R
10A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
1
Specification Features:
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
2
3
TO-220FP
High Voltage Wide Range Selection, 100V, 150V & 200V
DEVICE MARKING DIAGRAM
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBRF
Line 3 = 10xxxCT
Line 4 = Polarity
L xxyy
Line 2
Line 3
Line 4
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
POLARITY CONFIGURATION
1. Anode
2. Cathode
3. Anode
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol
VRRM
VRWM
VR
IF(AV)
Parameter
IFSM
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
TSTG
Storage Temperature Range
TJ
MBRF10100CT
MBRF10150CT
MBRF10200CT
Units
100
150
200
V
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Per Leg
Per Package
5
10
A
80
A
-65 to +150
°C
+150
°C
Operating Junction Temperature
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Parameter
Symbol
Value
Units
RθJC
Maximum Thermal Resistance, Junction-to-Case
1.5
°C/W
RθJA
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
62.5
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Symbol
Parameter
IR
Reverse Current
VF
Forward Voltage
TA = 25°C unless otherwise noted
MBRF10100CT
MBRF10150CT
MBRF10200CT
(Note 1)
Min
Max
Min
Max
Min
Max
@ rated VR
---
100
---
100
---
100
Test Condition
IF = 5A
IF = 10A
0.85
---
0.92
---
0.95
μA
1.00
---
1.00
Units
V
1.25
Note/s:
1. Tested under pulse condition of 300μS.
Number: DB-150
March 2010, Revision D
Page 1
MBRF10100CT through MBRF10200CT
TAK CHEONG
TAK CHEONG
®
SEM ICON DU CTO R
TYPICAL CHARACTERISTICS
Figure 2. Junction Capacitance (Per Diode)
Figure 1. Forward Current Derating Curve (Per Diode)
1000.0
f = 1MHz
Ta = 25℃
Typical Junction Capacitance
[pF]
Average Forward Current [A]
10
8
6
4
2
MBRF10100CT
MBRF10200CT
10.0
0
0
25
50
75
100
125
0
150
5
10
Tc - Case Tem perature [℃ ]
15
20
25
35
40
Figure 4. MBRF10150CTTypical Reverse Current (Per Diode)
10000.000
1000.000
IR - Reverse Current [uA])
1000.000
Ta= 150℃
Ta=125℃
100.000
10.000
Ta=75℃
1.000
0.100
Ta= 150℃
100.000
Ta=125℃
10.000
1.000
Ta=75℃
0.100
0.010
Ta=25℃
Ta=25℃
0.010
0.001
0
10
20
30
40
50
60
70
80
90
100
0
15
VR - Reverse Voltage [V]
30
45
60
75
90
105
120
135
150
VR - Reverse Voltage [V]
Figure 5. MBRF10200CTTypical Reverse Current (Per Diode)
Figure 6. MBRF10100CT Typical Forward Voltage (Per Diode)
10
100.000
IF - Forward Current [mA]
1000.000
IR - Reverse Current [uA])
30
Reverse Voltage [V]
Figure 3. MBRF10100CTTypical Reverse Current (Per Diode)
IR - Reverse Curretn [uA]
MBRF10150CT
100.0
Ta= 150℃
Ta=125℃
10.000
1.000
Ta=75℃
0.100
0.010
Ta=150℃
1
Ta=125℃
Ta=75
0.1
Ta=25℃
Ta=25℃
0.001
0
10
20
30
40
50
60
70
VR - Reverse Voltage [V]
80
90
100
0.01
0
0.2
0.4
0.6
0.8
1
VF - Instantaneous Forward Voltage [V]
Number: DB-150
March 2010, Revision D
Page 2
TAK CHEONG
®
SEM ICON DU CTO R
Figure 8. MBRF10200CT Typical Forward Voltage (Per Diode)
Figure 7. MBRF10150CT Typical Forward Voltage (Per Diode)
10
1
IF - Forward Current [mA]
IF - Forward Current [mA]
10
Ta=150℃
Ta=125℃
Ta=75℃
0.1
Ta=25℃
1
Ta=150℃
Ta=125℃
Ta=75℃
0.1
Ta=25℃
0.01
0.01
0
0.2
0.4
0.6
0.8
0
1
0.2
VF - Instantaneous Forward Voltage [V]
0.4
0.6
0.8
1
VF - Instantaneous Forward Voltage [V]
TO220FP SINGLE GAUGE PACKAGE OUTLINE
DIM
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
A1
2.7
3.3
0.106
0.130
A2
15.0
15.7
0.591
0.618
A4
6.2
6.6
0.244
0.260
b
0.5
0.9
0.020
0.035
b1
0.9
1.2
0.035
0.047
b2
1.0
1.2
0.039
0.047
c
0.4
0.6
0.016
0.024
D
9.8
10.3
0.386
0.406
e
2.34
2.74
0.092
0.108
E
4.3
4.6
0.169
0.181
E1
2.5
2.9
0.098
0.114
F
2.6
3.0
0.102
0.118
L
10.3
10.7
0.406
0.421
ØP
3.0
3.4
0.118
0.134
Q
2.3
2.7
0.091
0.106
Number: DB-150
March 2010, Revision D
Page 3
TAK CHEONG
®
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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