Eon EN39SL160AH-90NAP 16 megabit (1024k x 16-bit) flash memory with 4kbytes uniform sector, cmos 1.8 volt-only Datasheet

EN39SL160AH/L
EN39SL160AH/L
16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform
Sector, CMOS 1.8 Volt-only
FEATURES
•
-
• Single power supply operation
- Full voltage range:1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
• High performance
- Access times as fast as 70 ns
High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 90ms typical
Block erase time: 180ms typical
Chip erase time: 4s typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2 μA typical standby current
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector, Block and Chip Erase
• Chip Unprotect Mode
• Uniform Sector Architecture:
- 512 sectors of 2-Kword
- 32 blocks of 32-Kword
- Any sector or block can be erased individually
• Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
• Low Vcc write inhibit < 1.2V
• WP#/ACC Input pin:
- Write protect (WP#) function allows protection
the first or last blocks, regardless of block
protect status
- Acceleration (ACC) function acceleration
program timing.
• Minimum 100K endurance cycle
• Package Options
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
• Block Group protection:
- Hardware locking of blocks to prevent
program or erase operations within individual
blocks
- Additionally, temporary Block Unprotect
allows code changes in previously locked
blocks.
• Industrial temperature Range
GENERAL DESCRIPTION
The EN39SL160AH/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 words. Any word can be programmed typically in 8µs.The EN39SL160AH/L
features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for
WAIT statements in high-performance microprocessor systems.
The EN39SL160AH/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block
or full chip erase operation, where each block can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
CONNECTION DIAGRAMS
TFBGA
Top View, Balls Facing Down
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
WFBGA
Top View, Balls Facing Down
A6
A2
A5
A1
A4
A0
A3
CE#
A2
VSS
B6
A4
B5
A3
B4
A5
B3
DQ8
B2
OE#
B1
DQ0
C6
A6
C5
A7
D6
E6
A17
NC
F6
NC
G6
WE#
H6
Reset#
H5
D5
WP
WP#/ACC
#/A
NC
C4
DQ1
A10
J3
DQ10
C1
J5
A8
C3
DQ9
A9
J4
A18
C2
J6
DQ4
H2
D2
NC
A19
D1
E1
DQ2
DQ3
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
F1
VDD
3
G1
DQ12
H1
DQ13
J2
DQ5
J1
DQ14
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
K6
A11
K5
A13
K4
A12
K3
DQ11
K2
DQ6
K1
DQ15
L5
A14
L4
A15
L3
A16
L2
DQ7
L1
VSS
www.eonssi.com
EN39SL160AH/L
Table 1. PIN DESCRIPTION
Pin Name
Figure 1. LOGIC DIAGRAM
EN39SL160AH/L
Function
A0-A19
Addresses
DQ0-DQ15
16 Data Inputs/Outputs
CE#
Chip Enable
OE#
Output Enable
RESET#
Hardware Reset Pin
WE#
Write Enable
WP#/ACC
Hardware write protect/acceleration pin
Vcc
Supply Voltage
(1.65-1.95V)
Vss
Ground
NC
Not Connected to anything
DQ0 – DQ15
A0 - A19
CE#
OE#
WE#
RESET#
WP#/ACC
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 2. Uniform Sector / Block Architecture (Block 24 ~ 31)
A13
A12
A11
511
510
509
508
507
506
505
504
503
502
501
500
499
498
497
0FF800h-0FFFFFh
0FF000h-0FF7FFh
0FE800h-0FEFFFh
0FE000h-0FE7FFh
0FD800h-0FDFFFh
0FD000h-0FD7FFh
0FC800h-0FCFFFh
0FC000h-0FC7FFh
0FB800h-0FBFFFh
0FB000h-0FB7FFh
0FA800h-0FAFFFh
0FA000h-0FA7FFh
0F9800h-0F9FFFh
0F9000h-0F97FFh
0F8800h-0F8FFFh
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
496
0F8000h-0F87FFh
2
1
1
1
1
1
0
0
0
0
495
0F7800h-0F7FFFh
2
1
1
1
1
0
1
1
1
1
….
….
….
….
….
….
….
….
….
….
480
0F0000h-0F07FFh
2
1
1
1
1
0
0
0
0
0
479
0EF800h-0EFFFFh
2
1
1
1
0
1
1
1
1
1
….
….
….
….
….
….
….
….
….
1
1
1
0
1
0
0
0
0
….
….
….
448
0E0000h-0E07FFh
2
1
1
1
0
0
0
0
0
0
447
0DF800h-0DFFFFh
2
1
1
0
1
1
1
1
1
1
2
….
….
1
….
1
….
1
….
1
….
0
….
0
….
1
….
1
….
1
….
2
2
….
0E7800h-0E7FFFh
….
463
….
2
….
….
0E8000h-0E87FFh
….
2
464
….
….
….
2
432
0D8000h-0D87FFh
2
1
1
0
1
1
0
0
0
0
431
0D7800h-0D7FFFh
2
1
1
0
1
0
1
1
1
1
….
2
….
….
….
….
….
….
….
….
….
416
0D0000h-0D07FFh
2
1
1
0
1
0
0
0
0
0
415
0CF800h-0CFFFFh
2
1
1
0
0
1
1
1
1
1
2
….
….
….
….
….
….
….
….
….
400
0C8000h-0C87FFh
2
1
1
0
0
1
0
0
0
0
399
398
397
0C7800h-0C7FFFh
0C7000h-0C77FFh
0C6800h-0C6FFFh
2
2
2
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
1
0
1
2
….
….
….
….
….
….
….
….
24
A14
….
25
A15
….
26
A16
….
27
A17
….
28
A18
….
29
A19
….
30
Sector Size
(Kwords)
….
31
Address Range
(X16)
Sector
….
Block
386
0C1000h-0C17FFh
2
1
1
0
0
0
0
0
1
0
385
0C0800h-0C0FFFh
2
1
1
0
0
0
0
0
0
1
384
0C0000h-0C07FFh
2
1
1
0
0
0
0
0
0
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 2. Uniform Sector / Block Architecture (Block 16 ~ 23)
Block
Sector
1
1
1
1
1
1
1
1
0
1
0
1
0
0
0
0
367
0B7800h-0B7FFFh
2
1
0
1
1
0
1
1
1
1
352
0B0000h-0B07FFh
2
1
0
1
1
0
0
0
0
0
351
0AF800h-0AFFFFh
2
1
0
1
0
1
1
1
1
1
1
0
1
0
1
0
0
0
0
….
2
336
0A8000h-0A87FFh
2
335
0A7800h-0A7FFFh
2
1
0
1
0
0
1
1
1
1
2
….
….
….
….
….
….
….
….
….
0
0
0
1
1
1
1
2
….
0
1
….
0
1
….
0
0
….
1
0
….
0
1
….
1
2
….
2
09F800h-09FFFFh
….
0A0000h-0A07FFh
….
320
319
….
….
….
….
2
….
1
….
1
….
1
….
0
….
1
….
2
….
0B8000h-0B87FFh
….
368
….
0
1
….
1
0
….
0
0
….
0
0
….
1
1
….
1
1
….
1
1
….
0
0
….
1
1
….
2
2
….
….
1
1
1
….
1
1
1
….
1
1
1
….
0
0
0
….
1
1
1
….
2
2
2
….
0BF800h-0BFFFFh
0BF000h-0BF7FFh
0BE800h-0BEFFFh
….
A11
….
A12
….
A13
304
098000h-0987FFh
2
1
0
0
1
1
0
0
0
0
303
097800h-097FFFh
2
1
0
0
1
0
1
1
1
1
2
….
….
….
….
….
….
….
….
….
288
090000h-0907FFh
2
1
0
0
1
0
0
0
0
0
287
08F800h-08FFFFh
2
1
0
0
0
1
1
1
1
1
2
….
….
….
….
….
….
….
….
16
A14
….
17
A15
….
18
A16
….
19
A17
….
20
A18
0B9000h-0B97FFh
0B8800h-0B8FFFh
….
21
A19
370
369
….
22
Sector Size
(Kwords)
2
272
088000h-0887FFh
2
1
0
0
0
1
0
0
0
0
271
270
269
268
267
266
265
264
263
262
261
260
259
258
257
087800h-087FFFh
087000h-0877FFh
086800h-086FFFh
086000h-0867FFh
085800h-085FFFh
085000h-0857FFh
084800h-084FFFh
084000h-0847FFh
083800h-083FFFh
083000h-0837FFh
082800h-082FFFh
082000h-0827FFh
081800h-081FFFh
081000h-0817FFh
080800h-080FFFh
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
256
080000h-0807FFh
2
1
0
0
0
0
0
0
0
0
….
23
(X16)
….
383
382
381
Address Range
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 2. Uniform Sector / Block Architecture (Block 8 ~ 15)
Sector Size
(Kwords)
A19
A18
A17
A16
A15
A14
A13
A12
A11
255
254
253
252
251
250
249
248
247
246
245
244
243
242
241
240
07F800h-07FFFFh
07F000h-07F7FFh
07E800h-07EFFFh
07E000h-07E7FFh
07D800h-07DFFFh
07D000h-07D7FFh
07C800h-07CFFFh
07C000h-07C7FFh
07B800h-07BFFFh
07B000h-07B7FFh
07A800h-07AFFFh
07A000h-07A7FFh
079800h-079FFFh
079000h-0797FFh
078800h-078FFFh
078000h-0787FFh
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
239
077800h-077FFFh
2
0
1
1
1
0
1
1
1
1
….
….
….
….
….
….
….
….
1
0
0
0
0
0
1
0
1
1
1
1
1
….
0
0
0
207
067800h-067FFFh
2
0
1
1
0
0
1
1
1
1
192
060000h-0607FFh
2
0
1
1
0
0
0
0
0
0
191
05F800h-05FFFFh
2
0
1
0
1
1
1
1
1
1
….
0
0
0
175
057800h-057FFFh
2
0
1
0
1
0
1
1
1
1
2
….
….
0
….
….
1
….
….
1
….
….
0
….
….
1
….
….
0
….
….
2
….
….
058000h-0587FFh
….
….
2
176
….
….
….
2
….
….
0
….
….
1
….
….
0
….
….
1
….
….
1
….
….
0
….
….
2
….
….
068000h-0687FFh
….
….
2
208
….
….
….
1
1
160
050000h-0507FFh
2
0
1
0
1
0
0
0
0
0
159
04F800h-04FFFFh
2
0
1
0
0
1
1
1
1
1
2
….
….
….
….
….
….
….
….
….
144
048000h-0487FFh
2
0
1
0
0
1
0
0
0
0
143
142
141
047800h-047FFFh
047000h-0477FFh
046800h-046FFFh
2
2
2
0
0
0
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
1
0
1
2
….
….
….
….
….
….
….
….
….
8
1
0
….
9
0
2
….
10
2
….
11
070000h-0707FFh
06F800h-06FFFFh
….
12
224
223
….
13
2
….
15
….
Sector
14
Address Range
(X16)
Block
130
129
041000h-0417FFh
040800h-040FFFh
2
2
0
0
1
1
0
0
0
0
0
0
0
0
0
0
1
0
0
1
128
040000h-0407FFh
2
0
1
0
0
0
0
0
0
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 2. Uniform Sector / Block Architecture (Block 0 ~ 7)
Sector
1
1
1
1
1
1
1
1
0
1
0
1
112
038000h-0387FFh
2
0
0
1
1
1
0
0
0
0
111
037800h-037FFFh
2
0
0
1
1
0
1
1
1
1
0
0
0
1
1
1
1
0
0
027800h-027FFFh
2
0
0
1
0
0
1
1
1
1
2
….
0
….
0
….
1
….
0
….
1
….
0
….
0
….
2
….
79
2
028000h-0287FFh
….
….
80
….
0
1
….
0
0
….
1
1
….
1
0
….
0
0
….
0
2
….
2
02F800h-02FFFFh
….
030000h-0307FFh
95
….
96
….
2
….
0
1
….
1
0
….
0
0
….
0
0
….
1
1
….
1
1
….
1
1
….
0
0
….
0
0
….
….
1
1
1
….
1
1
1
….
1
1
1
….
0
0
0
….
0
0
0
….
2
2
2
….
03F800h-03FFFFh
03F000h-03F7FFh
03E800h-03EFFFh
….
A11
….
A12
….
A13
64
020000h-0207FFh
2
0
0
1
0
0
0
0
0
0
63
01F800h-01FFFFh
2
0
0
0
1
1
1
1
1
1
….
2
….
….
….
….
….
….
….
….
….
48
018000h-0187FFh
2
0
0
0
1
1
0
0
0
0
47
017800h-017FFFh
2
0
0
0
1
0
1
1
1
1
2
….
….
….
….
….
….
….
….
….
32
010000h-0107FFh
2
0
0
0
1
0
0
0
0
0
31
00F800h-00FFFFh
2
0
0
0
0
1
1
1
1
1
2
….
….
….
….
….
….
….
….
0
A14
….
1
A15
….
2
A16
….
3
A17
2
2
….
4
A18
039000h-0397FFh
038800h-038FFFh
….
5
A19
114
113
….
6
Sector Size
(Kwords)
2
16
008000h-0087FFh
2
0
0
0
0
1
0
0
0
0
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
007800h-007FFFh
007000h-0077FFh
006800h-006FFFh
006000h-0067FFh
005800h-005FFFh
005000h-0057FFh
004800h-004FFFh
004000h-0047FFh
003800h-003FFFh
003000h-0037FFh
002800h-002FFFh
002000h-0027FFh
001800h-001FFFh
001000h-0017FFh
000800h-000FFFh
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
000000h-0007FFh
2
0
0
0
0
0
0
0
0
0
….
7
(X16)
….
127
126
125
Address Range
….
Block
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
PRODUCT SELECTOR GUIDE
Product Number
Speed Option
EN39SL160AH/L
Full Voltage Range: Vcc=1.65 – 1.95 V
-70
-90
Max Access Time, ns (tacc)
70
90
Max CE# Access, ns (tce)
70
90
Max OE# Access, ns (toe)
30
35
BLOCK DIAGRAM
Vcc
Vss
DQ0 -DQ15
Block Protect Switches
Erase Voltage Generator
Input/Output Buffers
State
Contro l
WE#
WP#/ACC
RESET#
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
Vcc Detector
Timer
Address Latch
STB
STB
Data Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0-A19
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 3. OPERATING MODES
16M FLASH USER MODE TABLE
Operation
Read
Write
CMOS Standby
Output Disable
Hardware Reset
Temporary Block
Unprotect
Block Group Protect
(Note 2)
Chip Unprotect
(Note 2)
WP#/
ACC
A0-A19
(Note 1)
CE#
OE#
WE#
Reset#
L
L
Vcc ±
0.2V
L
X
L
H
H
L
L/H
(Note 1)
AIN
AIN
DOUT
DIN
X
H
X
X
H
X
H
H
Vcc±
0.2V
H
L
X
X
High-Z
X
X
X
X
High-Z
High-Z
X
X
X
VID
(Note 1)
AIN
DIN
L
H
L
VID
X
L
H
L
VID
(Note 1)
Block Address,
A6 =L, A1 = H,
A0 = L
Block Address,
A6 =L, A1 = H,
A0 = L
DQ0-DQ15
DIN
DIN
L=logic low= VIL, H=Logic High= VIH, VID = VHH =10.0 ± 1.0V, X=Don’t Care (either L or H, but not floating!),
DIN=Data In, DOUT=Data Out, AIN=Address In,
Notes:
1. If WP#/ACC = VIL , the first or last blocks are protected. If WP#/ACC = VIH the first or last block protection depends on whether
they were last protected or unprotected. If WP#/ACC = VHH, all blocks will be unprotected.
2. Please refer to “Block Group Protection and Chip Unprotection “, Flowchart 7a and Flowchart 7b.
Table 4. DEVICE IDENTIFICTION (Autoselect Codes)
16M FLASH MANUFACTURER/DEVICE ID TABLE
Description
Manufacturer ID:
Eon
Device ID
(top boot block)
Device ID
(bottom boot block)
Block Protection
Verification
CE# OE#
WE#
A19
to
A12
A11
to
A10
A9
A8
2
A7
A6
A5
to
A2
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
1
1Ch
L
L
H
X
X
VID
H
L
X
L
X
L
L
X
L
L
H
X
X
VID
X
X
L
X
L
H
27h
4Ah
L
L
H
X
X
VID
X
X
L
X
L
H
27h
4Bh
L
L
H
SA
X
VID
X
X
L
X
H
L
X
X
7Fh
01h
(Protected)
00h
(Unprotected)
Note:
1. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh. A further Manufacturing ID must be
read with A8=H.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be ≤ Vcc (CMOS logic level) for Command Autoselect Mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
USER MODE DEFINITIONS
Standby Mode
The EN39SL160AH/L has a CMOS-compatible standby mode, which reduces the current to < 0.2µA
(typical). It is placed in CMOS-compatible standby when the CE# pin is at VCC ± 0.2. RESET# pin must
also be at CMOS input levels. If CE# and RESET# are held at VIH, but not within VCC ± 0.2V, the device will
be in the standby modes, but the standby current will be greater. The outputs are in a high-impedance state
independent of the OE# input.
Read Mode
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings, except that if it reads at an address within
erase-suspended sectors/blocks, the device outputs status data. After completing a programming operation
in the Erase Suspend mode, the system may once again read array data with the same exception. See
“Erase Suspend/Erase Resume Commands” for more additional information.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Command” additional details.
Output Disable Mode
When the OE# pin is at a logic high level (VIH), the output from the EN39SL160AH/L is disabled. The
output pins are placed in a high impedance state.
Auto Select Identification Mode
The autoselect mode provides manufacturer and device identification, and block protection verification,
through identifier codes output on DQ15–DQ0. This mode is primarily intended for programming equipment
to automatically match a device to be programmed with its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID ( 9.0 V to 11.0 V) on address pin
A9. Address pins A8, A6, A1, and A0 must be as shown in Autoselect Codes table. In addition, when
verifying block protection, the block address must appear on the appropriate highest order address bits.
Refer to the corresponding block Address Tables. The Command Definitions table shows the remaining
address bits that are don’t-care. When all necessary bits have been set as required, the programming
equipment may then read the corresponding identifier code on DQ15–DQ0.
To access the autoselect codes in-system; the host system can issue the autoselect command via the
command register, as shown in the Command Definitions table. This method does not require VID. See
“Command Definitions” for details on using the autoselect mode.
Write Mode
Write operations, including programming data and erasing sectors/blocks of memory, require the host
system to write a command or command sequence to the device. Write cycles are initiated by placing the
word address on the device’s address inputs while the data to be written is input on DQ[15:0] in Word Mode.
The host system must drive the CE# and WE# pins Low and the OE# pin High for a valid write operation to
take place. All addresses are latched on the falling edge of WE# and CE#, whichever happens later. All
data is latched on the rising edge of WE# or CE#, whichever happens first. The system is not required to
provide further controls or timings. The device automatically provides internally generated program / erase
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
pulses and verifies the programmed /erased cells’ margin. The host system can detect completion of a
program or erase operation by reading the DQ[7] (Data# Polling) and DQ[6] (Toggle) status bits.
The ‘Command Definitions’ section of this document provides details on the specific device commands
implemented in the EN39SL160AH/L.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in
progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was
interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure
data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at Vss±0.3 V, the device
draws CMOS standby current (Icc2). If RESET# is held at VIL but not within Vss±0.3 V, the standby current
will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm- ware from the Flash memory.
Block Group Protection and Chip Unprotection
The hardware block group protection feature disables both program and erase operations in any block. The
hardware chip unprotection feature re-enables both program and erase operations in previously protected
blocks. A block group implies three or four adjacent blocks that would be protected at the same time.
Please see the following tables which show the organization of block groups.
There are two methods to enable this hardware protection circuitry. The first one requires only that the
RESET# pin be at VID and then standard microprocessor timings can be used to enable or disable this
feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings. When doing Chip
Unprotect, all the other blocks should be protected first.
The second method is meant for programming equipment. This method requires VID be applied to both
OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a
separate document called EN39SL160AH/L Supplement, which can be obtained by contacting a
representative of Eon Silicon Solution, Inc.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 5. Block Group Organization for (Un)Protection (Block Group 5~9)
Block Group
Block
Address range
Sector
(X16)
20
19
18
5
17
16
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
….
….
384
383
0C0000h-0C07FFh
0BF800h-0BFFFFh
368
367
0B8000h-0B87FFh
0B7800h-0B7FFFh
352
351
0B0000h-0B07FFh
0AF800h-0AFFFFh
….
….
….
….
….
….
….
….
….
….
….
….
….
….
0C8000h-0C87FFh
0C7800h-0C7FFFh
336
335
0A8000h-0A87FFh
0A7800h-0A7FFFh
….
21
400
399
320
319
0A0000h-0A07FFh
09F800h-09FFFFh
….
6
0D0000h-0D07FFh
0CF800h-0CFFFFh
304
303
098000h-0987FFh
097800h-097FFFh
….
22
416
415
288
287
090000h-0907FFh
08F800h-08FFFFh
….
23
0D8000h-0D87FFh
0D7800h-0D7FFFh
272
271
088000h-0887FFh
087800h-087FFFh
….
24
432
431
….
25
0E0000h-0E07FFh
0DF800h-0DFFFFh
….
7
448
447
….
26
0E8000h-0E87FFh
0E7800h-0E7FFFh
….
27
464
463
….
28
0F0000h-0F07FFh
0EF800h-0EFFFFh
….
29
480
479
….
8
0F8000h-0F87FFh
0F7800h-0F7FFFh
….
30
496
495
….
31
….
9
0FF800h-0FFFFFh
….
511
256
080000h-0807FFh
13
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 5. Block Group Organization for (Un)Protection (Block Group 0~4)
Block Group
Block
Address range
Sector
(X16)
4
3
1
2
1
0
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
….
….
128
127
040000h-0407FFh
03F800h-03FFFFh
112
111
038000h-0387FFh
037800h-037FFFh
96
95
030000h-0307FFh
02F800h-02FFFFh
….
….
….
….
….
….
….
….
….
….
….
….
….
….
….
048000h-0487FFh
047800h-047FFFh
80
79
028000h-0287FFh
027800h-027FFFh
….
5
144
143
64
63
020000h-0207FFh
01F800h-01FFFFh
….
2
050000h-0507FFh
04F800h-04FFFFh
48
47
018000h-0187FFh
017800h-017FFFh
….
6
160
159
32
31
010000h-0107FFh
00F800h-00FFFFh
….
7
058000h-0587FFh
057800h-057FFFh
16
15
008000h-0087FFh
007800h-007FFFh
….
8
176
175
….
9
060000h-0607FFh
05F800h-05FFFFh
….
3
192
191
….
10
068000h-0687FFh
067800h-067FFFh
….
11
208
207
….
12
070000h-0707FFh
06F800h-06FFFFh
….
13
224
223
….
4
078000h-0787FFh
077800h-077FFFh
….
14
240
239
….
15
07F800h-07FFFFh
….
255
0
000000h-0007FFh
14
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Write Protect / Accelerated Program (WP# / ACC)
The WP#/ACC pin provides two functions. The Write Protect (WP#) function provides a hardware method
of protecting the first or last 64K-byte Block. The ACC function allows faster manufacturing throughput at
the factory, using an external high voltage.
When WP#/ACC is Low, the device protects the first or last 64K-byte Block; no matter the blocks are
protected or unprotected using the method described in “Block/Block Group Protection & Chip
Unprotection”, Program and Erase operations in these blocks are ignored.
When WP#/ACC is High, the device reverts to the previous protection status of the first or last 64K-byte
Block. Program and Erase operations can now modify the data in the first or last 64K-byte Block unless the
block is protected using Block Protection.
When WP#/ACC is raised to VHH the memory automatically enters the Accelerated Program mode, this
mode permit the system to skip the normal command unlock sequences and program byte/word locations
directly to reduces the time required for program operation. When WP#/ACC returns to VIH or VIL normal
operation resumes. The transitions from VIH or VIL to VHH and from VHH to VIH or VIL must be slower than tVHH,
see Figure 14
Note that the WP#/ACC pin must not be left floating or unconnected. In addition, WP#/ACC pin must
not be at VHH for operations other than accelerated programming. It could cause the device to be damaged.
Never raise this pin to VHH from any mode except Read mode. Otherwise the memory may be left in an
indeterminate state.
A 0.1µF capacitor should be connected between the WP#/ACC pin and the VSS Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the currents
required during Accelerated Program mode.
Temporary Block Unprotect
Start
This feature allows temporary unprotection of previously protected
block groups to change data while in-system. The Block Unprotect
mode is activated by setting the RESET# pin to VID. During this
mode, formerly protected blocks can be programmed or erased by
simply selecting the Block addresses. Once is removed from the
RESET# pin, all the previously protected blocks are protected
again. See accompanying figure and timing diagrams for more
details.
Notes:
1. All protected blocks unprotected.
2. Previously protected blocks protected
again.
Reset#=VID (note 1)
Perform Erase or Program
Operations
Reset#=VIH
Temporary Block
Unprotect Completed (note 2)
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is independent of the
CE#, WE# and OE# control signals. Standard address access timings provide new data when addresses
are changed. While in sleep mode, output is latched and always available to the system. Icc5 in the DC
Characteristics table represents the automatic sleep mode current specification.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
COMMON FLASH INTERFACE (CFI)
The Common Flash Interface (CFI) specification outlines device and host systems software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data.
The system can read CFI information at the addresses given in Tables 6-8. In word mode, the upper
address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset
command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode and the system can read CFI data at the addresses given in Tables 6–8. The
system must write the reset command to return the device to the autoselect mode.
Table 6. CFI Query Identification String (1)
Adresses
(Word Mode)
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Adresses
(Byte Mode)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
1. Refer to CFI publication 100 for more details.
Table 7. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
1Bh
36h
0016h
1Ch
38h
0020h
1Dh
1Eh
1Fh
3Ah
3Ch
3Eh
0000h
0000h
0004h
20h
40h
0000h
21h
22h
23h
24h
25h
42h
44h
46h
48h
4Ah
000Ah
0000h
0005h
0000h
0004h
26h
4Ch
0000h
Data
Description
Vcc Min (write /erase)
DQ7-DQ4: volts, DQ3 –DQ0: 100 millivolts
Vcc Max (write /erase)
DQ7-DQ4: volts, DQ3 –DQ0: 100 millivolts
Vpp Min. voltage (00h = no Vpp pin present)
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word program 2^N μs
Typical timeout for Min, size buffer write 2^N μs (00h = not
supported)
Typical timeout per individual sector/block erase 2^N ms
Typical timeout for full chip erase 2^N ms (00h = not supported)
Max. timeout for byte/word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual sector/block erase 2^N times typical
Max timeout for full chip erase 2^N times typical (00h = not
supported)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 8. Device Geometry Definition
Addresses
(Word mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
Addresses
(Byte Mode)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
Data
0015h
0002h
0000h
0000h
0000h
0002h
00FFh
0001h
0010h
0000h
001Fh
0000h
0000h
0001h
Description
Device Size = 2^N byte
Flash Device Interface description;
0002h = x8/x16 asynchronous interface.
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Sector/Block Regions within device
Erase Sector Region 1 Information
(y+1 = Number of sectors; z x 256B = sector size)
y = 511 + 1 = 512 sectors (01FFh = 511)
z = 16 x 256 Bytes = 4 KByte/sector (0010h = 16)
Erase Block Region 2 Information
(y+1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001Fh = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100h = 256)
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which might
otherwise be caused by false system level signals during Vcc power up and power down transitions, or
from system noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc
power up and power down. The command register and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must
provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than VLKO.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH, or WE# = VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while OE# is a logical one. If CE#, WE#, and OE# are all
logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even with
CE# = VIL, WE# = VIL and OE# = VIH, the device will not accept commands on the rising edge of WE#.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
17
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
COMMAND DEFINITIONS
The operations of EN39SL160AH/L are selected by one or more commands written into the command
register to perform Read/Reset Memory, Read ID, Read Block Protection, Program, Sector/Block Erase,
Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at
specific addresses via the command register. The sequences for the specified operation are defined in the
Command Definitions table (Table 9). Incorrect addresses, incorrect data values or improper sequences
will reset the device to Read Mode.
Table 9. EN39SL160AH/L Command Definitions
Cycles
Bus Cycles
Command
Sequence
Read
Reset
Autoselect
Manufacturer
ID
Device ID
Top Boot
Device ID
Bottom Boot
Block Protect
Verify
Program
Chip Erase
Block Erase
Sector Erase
1
1
Word
RA
xxx
4
Word
Byte
Word
Byte
4
4
Byte
6
6
6
1
1
Word
Byte
AA
AA
1
555
AAA
555
AAA
555
AAA
555
AAA
xxx
xxx
55
AA
th
6
Cycle
Addr Data
Cycle
Addr Data
2AA
555
2AA
555
2AA
555
2AA
555
55
555
AAA
10
55
BA
50
55
SA
30
55
2AA
555
2AA
555
55
55
AA
AA
AA
555
AAA
555
AAA
2AA
555
2AA
555
2AA
555
2AA
555
90
90
555
55
555
AA
90
AAA
2AA
AA
AAA
4
th
5
Cycle
Addr Data
555
555
4
th
4
Cycle
Addr
Data
AA
555
AAA
555
AAA
rd
3
Cycle
Addr Data
RD
F0
AAA
Word
Word
Byte
Word
Byte
Word
Byte
Word
Byte
nd
2
555
Byte
Erase Suspend
Erase Resume
CFI Query
st
1
Cycle
Addr Data
90
AAA
55
55
55
55
555
AAA
555
AAA
555
AAA
555
AAA
A0
80
80
80
000
100
000
200
X01
X02
X01
X02
(BA)
X02
(BA)
X04
7F
1C
7F
1C
274A
4A
274B
4B
XX00
XX01
00
01
PA
PD
555
AAA
555
AAA
555
AAA
AA
AA
AA
B0
30
98
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
BA = Block Address: address of the Block to be erased or verified. Address bits A19-A15 uniquely select any Block
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A11 uniquely select any Sector
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
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EN39SL160AH/L
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors/blocks, the device outputs status data. After completing a programming operation in
the Erase Suspend mode, the system may once again read array data with the same exception.
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or
while in the autoselect mode. See next section for details on Reset.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’tcare for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data. Once erasure begins, however, the device
ignores reset commands until the operation is complete. The reset command may be written between the
sequence cycles in a program command sequence before programming begins. This resets the device to
reading array data (also applies to programming in Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices
codes, and determine whether or not a block is protected. The Command Definitions table shows the
address and data requirements. This is an alternative to the method that requires VID on address bit A9
and is intended for PROM programmers.
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.
Autoselect mode is then entered and the system may read at addresses shown in Table 4 any number of
times, without needing another command sequence.
The system must write the reset command to exit the autoselect mode and return to reading array data.
Programming Command
Programming the EN39SL160AH/L is performed by using a four bus-cycle operation (two unlock write
cycles followed by the Program Setup command and Program Data Write cycle). When the program
command is executed, no additional CPU controls or timings are necessary. An internal timer terminates
the program operation automatically. Address is latched on the falling edge of CE# or WE#, whichever is
last; data is latched on the rising edge of CE# or WE#, whichever is first.
Programming status may be checked by sampling data on DQ7 (DATA# polling) or on DQ6 (toggle bit).
When the program operation is successfully completed, the device returns to read mode and the user can
read the data programmed to the device at that address. Note that data can not be programmed from a 0
to a 1. Only an erase operation can change a data from 0 to 1. When programming time limit is exceeded,
DQ5 will produce a logical “1” and a Reset command can return the device to Read mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
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EN39SL160AH/L
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations. The Command Definitions table shows the
address and data requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded Chip Erase algorithm are ignored.
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete,
the device returns to reading array data and addresses are no longer latched.
Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in
“AC Characteristics” for parameters, and to the Chip, Sector/Block Erase Operation Timings for timing
waveforms.
Sector/Block Erase Command Sequence
Sector/Block erase is a six bus cycle operation. The sector/block erase command sequence is initiated by
writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the address of the sector/block to be erased, and the sector/block erase command. The
Command Definitions table shows the address and data requirements for the sector/block erase
command sequence.
Once the sector/block erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored.
When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by using
DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4
illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC
Characteristics” section for parameters, and to the Sector/Block Erase Operations Timing diagram for
timing waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector/block erase operation and then
read data from, or program data to, any sector/block not selected for erasure. This command is valid only
during the sector/block erase operation. The Erase Suspend command is ignored if written during the chip
erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase
Suspend command.
When the Erase Suspend command is written during a sector/block erase operation, the device requires
a maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program data to
any sector/block not selected for erasure. (The device “erase suspends” all sector/blocks selected for
erasure.) Normal read and write timings and command definitions apply. Reading at any address within
erase-suspended sectors/blocks produces status data on DQ7–DQ0. The system can use DQ7, or DQ6
and DQ2 together, to determine if a sector/block is actively erasing or is erase-suspended. See “Write
Operation Status” for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors/blocks. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation
Status” for more information. The Autoselect command is not supported during Erase Suspend Mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
20
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
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EN39SL160AH/L
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector/block erase operation. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7: DATA# Polling
The EN39SL160AH/L provides DATA# polling on DQ7 to indicate the status of the embedded operations.
The DATA# Polling feature is active during the embedded Programming, Sector/Block Erase, Chip Erase,
and Erase Suspend. (See Table 6)
When the embedded Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the embedded Programming, an
attempt to read the device will produce the true data written to DQ7. For the embedded Programming,
DATA# polling is valid after the rising edge of the fourth WE# or CE# pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the DQ7
output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7 output
during the read cycles. For Chip Erase, the DATA# polling is valid after the rising edge of the sixth WE# or
CE# pulse in the six-cycle sequence. DATA# polling is valid after the last rising edge of the WE# or CE#
pulse for chip erase or sector/block erase.
DATA# Polling must be performed at any address within a sector/block that is being programmed or
erased and not a protected sector/block. Otherwise, DATA# polling may give an inaccurate result if the
address used is in a protected block.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when the
output enable (OE#) is low. This means that the device is driving status information on DQ7 at one instant
of time and valid data at the next instant of time. Depending on when the system samples the DQ7 output,
it may read the status of valid data. Even if the device has completed the embedded operations and DQ7
has a valid data, the data output on DQ0-DQ6 may be still invalid. The valid data on DQ0-DQ7 will be
read on the subsequent read attempts.
The flowchart for DATA# Polling (DQ7) is shown on Flowchart 5. The DATA# Polling (DQ7) timing
diagram is shown in Figure 8.
DQ6: Toggle Bit I
The EN39SL160AH/L provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device at
any address (by active OE# or CE#) will result in DQ6 toggling between “zero” and “one”. Once the
embedded Program or Erase operation is completed, DQ6 will stop toggling and valid data will be read on
the next successive attempts. During embedded Programming, the Toggle Bit is valid after the rising edge
of the fourth WE# pulse in the four-cycle sequence. During Erase operation, the Toggle Bit is valid after
the rising edge of the sixth WE# pulse for sector/block erase or chip erase.
In embedded Programming, if the block being written to is protected, DQ6 will toggles for about 2 μs, then
stop toggling without the data in the block having changed. In Sector/Block Erase or Chip Erase, if all
selected blocks are protected, DQ6 will toggle for about 100 μs. The chip will then return to the read mode
without changing data in all protected blocks.
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is shown in
Figure 9.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
21
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
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EN39SL160AH/L
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase
cycle was not successfully completed. Since it is possible that DQ5 can become a 1 when the device has
successfully completed its operation and has returned to read mode, the user must check again to see if
the DQ6 is toggling after detecting a “1” on DQ5.
The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the reset command to return the device to reading
array data.
DQ3: Sector/Block Erase Timer
After writing a sector/block erase command sequence, the output on DQ3 can be used to determine
whether or not an erase operation has begun. (The sector/block erase timer does not apply to the chip
erase command.) When sector/block erase starts, DQ3 switches from “0” to “1.” This device does not
support multiple sector/block erase command sequences so it is not very meaningful since it immediately
shows as a “1” after the first 30h command. Future devices may support this feature.
DQ2: Erase Toggle Bit II
The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector/block is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector/block is erasesuspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors/blocks that have been selected for
erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector/block is actively erasing or is erase-suspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors/blocks are selected for erasure. Thus, both status bits are required for sector/block and mode
information. Refer to the following table to compare outputs for DQ2 and DQ6.
Flowchart 6 shows the toggle bit algorithm, and the section “DQ2: Toggle Bit” explains the algorithm. See
also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing
diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling.
Typically, a system would note and store the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or erase operation. The system can read array data on
DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped
toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is still toggling, the device did not complete the operation
successfully, and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read
cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
22
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
perform other system tasks. In this case, the system must start at the beginning of the algorithm when it
returns to determine the status of the operation (top of Flowchart 6).
Write Operation Status
Standar
d Mode
Erase
Suspend
Mode
Operation
DQ7
(note2)
DQ6
DQ5
(note1)
DQ3
DQ2
(note2)
Embedded Program
Algorithm
DQ7#
Toggle
0
N/A
No
toggle
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
1
No
Toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
Reading within Erase
Suspended Sector/Block
Reading within Non-Erase
Suspended Sector/Block
Erase-Suspend Program
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See
“DQ5:Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
23
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 10. Status Register Bits
DQ
Name
Logic Level
DQ7#
Definition
Erase Complete or
erase Sector/Block in Erase suspend
Erase On-Going
Program Complete or
data of non-erase Sector/Block during
Erase Suspend
Program On-Going
‘-1-0-1-0-1-0-1-’
Erase or Program On-going
‘1’
7
6
DATA#
POLLING
TOGGLE
BIT
5
TIME OUT BIT
3
ERASE TIME
OUT BIT
2
TOGGLE
BIT
‘0’
DQ7
DQ6
Read during Erase Suspend
‘-1-1-1-1-1-1-1-‘
Erase Complete
‘1’
‘0’
‘1’
‘0’
Program or Erase Error
Program or Erase On-going
Erase operation start
Erase timeout period on-going
Chip Erase, Sector/Block Erase or
Erase suspend on currently addressed
Sector/Block. (When DQ5=1, Erase
Error due to currently addressed
Sector/Block. Program during Erase
Suspend on-going at current address
‘-1-0-1-0-1-0-1-’
Erase Suspend read on
non Erase Suspend Sector/Block
DQ2
Notes:
DQ7 DATA# Polling: indicates the P/E C status check during Program or Erase, and on completion before checking bits DQ5 for
Program or Erase Success.
DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged. Successive
reads output complementary data on DQ6 while programming or Erase operation are on-going.
DQ5 Time Out Bit: set to “1” if failure in programming or erase
DQ3 Sector/Block Erase Command Timeout Bit :Operation has started. Only possible command is Erase suspend (ES).
DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector/Block
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
24
©2004 Eon Silicon Solution, Inc.,
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EN39SL160AH/L
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
START
Write Program
Comma nd Sequence
(shown below)
Data# P oll Device
No
Verify Data?
Yes
Increment
Address
Last
No
Address?
Yes
Programming Done
Flowchart 2. Embedded Program Command Sequence
See the Command Definitions section for more information on WORD mode.
555H / AAH
2AAH / 55H
555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
©2004 Eon Silicon Solution, Inc.,
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EN39SL160AH/L
Flowchart 3. Embedded Erase
START
Write Erase
Command Sequence
Data Poll from
System or Toggle Bit
successfully
completed
Data =FFh?
No
Yes
Erase Done
Flowchart 4. Embedded Erase Command Sequence
See the Command Definitions section for more information on WORD mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
26
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
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EN39SL160AH/L
Flowchart 5. DATA# Polling
Algorithm
Start
Read Data
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Data (1)
Notes:
(1) This second read is necessary in case the
first read was done at the exact instant when
the status data was in transition.
DQ7 = Data?
Yes
No
Fail
Pass
Start
Flowchart 6. Toggle Bit Algorithm
Read Data twice
DQ6 = Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read Data twice (2)
DQ6 = Toggle?
Notes:
(2) This second set of reads is necessary in case
the first set of reads was done at the exact
instant when the status data was in transition.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
No
Yes
Fail
27
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
Pass
www.eonssi.com
EN39SL160AH/L
Flowchart 7a. In-System Block Group Protect Flowchart
START
PLSCNT = 1
RESET# = VID
Wait 1 μs
No
First Write
Cycle =
60h?
Temporary Block
Unprotect Mode
Yes
Set up block
group address
To Protect: Write 60h to
block addr with
A6 = 0, A1 = 1, A0 = 0
Wait 150 μs
To Verify: Write 40h to
block group address with
A6 = 0, A1 = 1, A0 = 0
Increment
PLSCNT
Reset
PLSCNT = 1
Wait 0.4 μs
Read from block
address with
A6 = 0, A1 = 1, A0 = 0
No
PLSCNT = 25?
No
Data = 01h?
Yes
Yes
Device failed
Protect another
block?
Yes
No
Remove VID
from RESET#
Write reset
command
Block Group Protect
Algorithm
Block Protect
complete
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
28
©2004 Eon Silicon Solution, Inc.,
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EN39SL160AH/L
Flowchart 7b. In-System Chip Unprotect Flowchart
START
PLSCNT = 1
Protect all blocks:
The indicated portion
of the block protect
algorithm must be
performed for all
unprotected blocks
prior to issuing the
first block unprotect
address (see
Diagram 7a.)
RESET# = VID
Wait 1 μs
No
Temporary Block
Unprotect Mode
First Write
Cycle = 60h?
Yes
No
All blocks
protected?
Yes
Set up first block
address
Chip Unprotect: Write 60H to
block address with A6 = 1,
A1 = 1, A0 = 0
Wait 15 ms
Increment
PLSCNT
Verify Chip Unprotect: Write
40h to block address with
A6 = 1, A1 = 1, A0 =0
Wait 0.4 μs
No
PLSCNT =
1000?
Read from block address with
A6 = 1, A1 = 1, A0 = 0
No
Yes
Yes
Device failed
Set up next block
address
Data = 00h?
No
Last block
verified?
Yes
Chip Unprotect Algorithm
Remove VID from
RESET#
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
29
Write reset
command
Chip Unprotect
complete
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
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EN39SL160AH/L
Table 11. DC Characteristics
(Ta = - 40°C to 85°C or - 45°C to 125°C; VCC = 1.65-1.95V)
Symbol
Parameter
Test Conditions
ILI
Input Leakage Current
ILO
ICC1
Max
Unit
0V≤ VIN ≤ Vcc
±3
µA
Output Leakage Current
0V≤ VOUT ≤ Vcc
±3
µA
Active Read Current (Byte mode)
CE# = VIL, OE# = VIH,
F=5MHz
5
10
mA
5
10
mA
0.2
5.0
µA
0.2
15
µA
0.2
5.0
µA
0.2
15
µA
15
25
mA
0.2
5.0
µA
0.2
15
µA
Active Read Current (Word mode)
Supply Current (Standby)
ICC2
Supply Current (Standby)
For Automotive (-45°C to +125°C)
VCC , Reset Current
ICC3
ICC4
VCC , Reset Current
For Automotive (-45°C to +125°C)
Supply Current (Program or Erase)
CE# = RESET# = Vcc
(Note 1)
CE# = RESET# = Vcc
(Note 1)
CE# = RESET# =
Vss ± 0.2 V
(Note 1)
CE# = RESET# =
Vss ± 0.2 V
(Note 1)
Program or Erase in
progress
VIH = Vcc ± 0.2 V
Automatic Sleep Mode
ICC5
Min
VIL = Vss ± 0.2 V
Automatic Sleep Mode
For Automotive (-45°C to +125°C)
VIH = Vcc ± 0.2 V
VIL = Vss ± 0.2 V
VIL
Input Low Voltage
-0.5
VIH
Input High Voltage
0.7 x
Vcc
VOL
Output Low Voltage
IOL = 100 μA
VOH
Output High Voltage
IOH = -100 μA,
VID
A9 Voltage (Electronic Signature)
IID
A9 Current (Electronic Signature)
VLKO
Supply voltage (Erase and
Program lock-out)
Typ
0.3 x
VCC
Vcc +
0.3
0.1
Vcc 0.1
9.0
V
V
V
V
10.0
A9 = VID
1.2
11.0
V
50
µA
1.5
V
Notes
1. RESET# pin input buffers are always enabled so that they draw power if not at full CMOS supply voltages.
2. Maximum ICC specifications are tested with Vcc = Vcc max.
B
B
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
30
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Test Conditions
Test Specifications
Test Conditions
-70
Output Load Capacitance, CL
-90
Unit
30
pF
Input Rise and Fall times
5
ns
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
0.0-2.0
V
1/2 Vcc
V
1/2 Vcc
V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
31
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
AC CHARACTERISTICS
Hardware Reset (Reset#)
(Ta = - 40°C to 85°C or - 45°C to 125°C; VCC = 1.65-1.95V)
Parameter
Std
tRP1
tRP2
tRH
tREADY1
tREADY2
Description
RESET# Pulse Width (During Embedded Algorithms)
RESET# Pulse Width (NOT During Embedded Algorithms)
Reset# High Time Before Read
Reset# Pin Low (During Embedded Algorithms)
to Read or Write
Reset# Pin Low (NOT During Embedded Algorithms)
to Read or Write
Test
Setup
Min
Min
Min
Speed
-70
-90
10
500
50
Max
20
us
Max
500
ns
Unit
us
ns
ns
Figure 2. AC Waveforms for RESET#
Reset# Timings
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
32
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
AC CHARACTERISTICS
Table 12. AC CHARACTERISTICS
(Ta = - 40°C to 85°C or - 45°C to 125°C; VCC = 1.65-1.95 V)
Read-only Operations Characteristics
Parameter
Symbols
Test Setup
Description
JEDEC
Standard
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable To Output Delay
tGLQV
tOE
tEHQZ
Speed Options
Unit
-70
-90
Min
70
90
ns
CE# = VIL
OE# = VIL
Max
70
90
ns
OE# = VIL
Max
70
90
ns
Output Enable to Output Delay
Max
30
35
ns
tDF
Chip Enable to Output High Z
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
20
ns
tAXQX
tOH
Output Hold Time from
Addresses, CE# or OE#,
whichever occurs first
Min
0
ns
tOEH
Output Enable
Hold Time
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Notes:
1. High Z is Not 100% tested.
2. For – 70, 90
Vcc =1.65 – 1.95V
Output Load : 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1/2 Vcc
Figure 3. AC Waveforms for READ Operations
tBRCB
Addresses
Addresses Stable
tBACC
CE#
OE#
WE#
tBDF
tBOEB
tBOEHB
tBCEB
Outputs
tBOH
HIGH Z
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Output Valid
33
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
HIGH Z
www.eonssi.com
EN39SL160AH/L
Table 13. AC CHARACTERISTICS
(Ta = - 40°C to 85°C or - 45°C to 125°C; VCC = 1.65-1.95V)
Write (Erase/Program) Operations
Parameter
Symbols
Speed Options
Description
JEDEC
Standard
-70
-90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time before Write
(OE# High to WE# Low)
Min
0
ns
30
40
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
45
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
25
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
8
µs
Sector
Typ
0.09
s
Block
Typ
0.18
s
Chip
Typ
4
s
Min
50
µs
tWHWH2
tWHWH2
tVCS
Erase Operation (Note 2)
Vcc Setup Time (Note 1)
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance for more information.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
34
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 14. AC CHARACTERISTICS
(Ta = - 40°C to 85°C or - 45°C to 125°C; VCC = 1.65-1.95V)
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
JEDEC
Speed Options
Description
Standard
-70
-90
Unit
70
90
ns
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time before Write
(OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
8
µs
Sector
Typ
0.09
s
Block
Typ
0.18
s
Chip
Typ.
4
s
tWHWH2
tWHWH2
Erase Operation
(Note 2)
30
40
35
45
ns
ns
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance for more information.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
35
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Table 15. ERASE AND PROGRAMMING PERFORMANCE
Typ
Limits
Max
Unit
Sector Erase Time
0.09
0.4
sec
Block Erase Time
0.18
2
sec
Chip Erase Time
4
35
sec
Word Programming Time
8
200
µs
Chip Programming Time
8
11
sec
Erase/Program Endurance
100K
Parameter
cycles
Comments
Excludes 00H programming prior
to erasure
Excludes system level overhead
Minimum 100K cycles
Table 16. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Data Retention Time
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
36
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
AC CHARACTERISTICS
Figure 4. AC Waveforms for Chip Erase Operations Timings
Erase Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x2AA
Read Status Data (last two cycles)
tAH
0x555
VA
VA
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
0x55
Data
tDS
VCC
tWHWH2
0x10
Status
DOUT
tDH
tVCS
Notes:
1. VA=Valid Address for reading status, Dout = true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
37
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
AC CHARACTERISTICS
Figure 5. AC Waveforms for Block Erase Operations Timings
Erase Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x2AA
Read Status Data (last two cycles)
tAH
BA
VA
VA
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
0x55
Data
tDS
VCC
tWHWH2
0x50
Status
DOUT
tDH
tVCS
Notes:
1. BA=Block Address (for block erase), VA=Valid Address for reading status, Dout=true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
38
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 6. AC Waveforms for Sector Erase Operations Timings
Erase Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x2AA
Read Status Data (last two cycles)
tAH
SA
VA
VA
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
0x55
Data
tDS
tWHWH2
0x30
Status
DOUT
tDH
VCC
tVCS
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout =true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
39
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 7. Program Operation Timings
Program Command Sequence (last 2 cycles)
tAS
tWC
Addresses
0x555
Program Command Sequence (last 2 cycles)
tAH
PA
PA
PA
CE#
tGHWL
OE#
tCH
tWP
WE#
tWPH
tCS
Data
OxA0
tDS
VCC
tWHWH1
Status
PD
DOUT
tDH
tVCS
Notes:
1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address.
2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
40
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm
Operations
tRC
Addresses
VA
tCH
VA
VA
tACC
tCE
CE#
tOE
OE#
tOEH
tDF
WE#
tOH
DQ[7]
Complement
DQ[6:0]
Status Data
Comple
-ment
Status
Data
Valid Data
True
True
Valid Data
Notes:
1. VA=Valid Address for reading Data# Polling status data
2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array
data read cycle.
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations
tRC
VA
Addresses
tCH
VA
VA
VA
tACC
tCE
CE#
tOE
OE#
WE#
DQ6, DQ2
tOEH
tDF
tOH
Valid Status
(first read)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Valid Status
(second read)
41
Valid Status
(stops toggling)
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
Valid Data
www.eonssi.com
EN39SL160AH/L
Figure 10. Alternate CE# Controlled Write Operation Timings
PA for Program
SA for Sector Erase
BA for Block Erase
0x555 for Chip Erase
0x555 for Program
0x2AA for Erase
Addresses
VA
tWC
tAS
tAH
WE#
tWH
tGHEL
OE#
tCP
tCPH
tWS
CE#
tDS
tWHWH1 / tWHWH2
tBUSY
tDH
Status
Data
0xA0 for
Program
0x55 for Erase
DOUT
PD for Program
0x30 for Sector Erase
0x50 for Block Erase
0x10 for Chip Erase
tRH
Reset#
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
Dout = array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command sequence.
Figure 11. DQ2 vs. DQ6
Enter
Embedded
Erase
WE#
Enter Erase
Suspend
Program
Erase
Suspend
Erase
Erase
Resume
Enter
Suspend
Program
Enter
Suspend
Read
Erase
Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
42
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 12. Block Group Protect and Chip Unprotect Timing Diagram
VID
RESET#
Vcc
0V
0V
tVIDR
tVIDR
SA,
A6,A1,A0
Data
60h
Valid
Valid
Valid
60h
40h
Status
Block Protect/Unprotect
Verify
CE#
>0.4μS
WE#
>1μS
Block Protect: 150 uS
Chip Unprotect: 15 mS
OE#
Notes:
Use standard microprocessor timings for this device for read and write cycles.
For Block Group Protect, use A6=0, A1=1, A0=0. For Chip Unprotect, use A6=1, A1=1, A0=0.
Temporary Block Unprotect
Parameter
Std
Description
tVIDR
Speed Option
-70
-90
Unit
VID Rise and Fall Time
RESET# Setup Time for Temporary
tRSP
Block Unprotect(Note)
Notes: tRSP is Not 100% tested.
Min
500
ns
Min
4
µs
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
43
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 13. Temporary Block Unprotect Timing Diagram
VID
RESET#
0 or 2 V
0 or 2 V
tVIDR
tVIDR
CE#
WE#
tRSP
Write Protect / Accelerated Program
Figure 14. Accelerated Program Timing Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
44
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 15. 48L TFBGA 6mm x 8mm package outline
SYMBOL
DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
1.30
A1
0.23
0.29
---
A2
0.84
0.91
---
D
7.90
8.00
8.10
E
5.90
6.00
6.10
D1
---
5.60
---
E1
---
4.00
---
e
---
0.80
---
b
0.35
0.40
Note : 1. Coplanarity: 0.1 mm
0.45
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
45
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Figure 16. 48L WFBGA 4mm x 6mm package outline
Note : Controlling dimensions are in millimeters (mm).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
46
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Storage Temperature
-65 to +150
℃
Plastic Packages
-65 to +125
℃
Ambient Temperature
With Power Applied
-55 to +125
℃
Output Short Circuit Current1
200
mA
A9, OE#, Reset# 2
-0.5 to +11.0
V
All other pins 3
-0.5 to Vcc+0.5
V
Vcc
-0.5 to + Vcc+0.5
V
Voltage with
Respect to Ground
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC input voltage on A9, OE#, RESET# pins is –0.5V. During voltage transitions, A9, OE#, RESET# pins may undershoot
Vss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on A9,
OE#, and RESET# is 9.0V which may overshoot to 11V for periods up to 20ns.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for periods of up
to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V.
During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure below.
4.
Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating
only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the
maximum rating values for extended periods of time may adversely affect the device reliability.
RECOMMENDED OPERATING RANGES1
Parameter
Value
Unit
-40 to 85
-45 to 125
℃
Full Voltage Range:
1.65 to 1.95
V
Ambient Operating Temperature
Industrial Devices
Automotive Devices
Operating Supply Voltage
Vcc
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+2.0V
0
0
Maximum Negative Overshoot Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Maximum Positive Overshoot Waveform
47
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the same
as that of Eon delivered before. Please be advised with the change and appreciate your kindly
cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code:
XXXXX
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
48
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
ORDERING INFORMATION
EN39SL160A
H
-
70
B
I
P
PACKAGING CONTENT
P = RoHS compliant
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
A = Automotive (-45°C to +125°C)
PACKAGE
B = 48-Ball Thin Fine Pitch Ball Grid Array (TFBGA)
0.8mm pitch, 6mm x 8mm package
N = 48-Ball Very-Very-Thin-Profile Fine Pitch
Ball Grid Array (WFBGA)
0.5mm pitch, 4mm x 6mm package
SPEED
70 = 70ns
90 = 90ns
SECTOR for WRITE PROTECT (WP#/ACC=L)
H = Highest address block protected
L = Lowest address block protected
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
39SL = 1.8V Serial 4KByte Uniform-Sector FLASH
160 = 16 Megabit (1024K x 16)
A = version identifier
The valid combinations of EN39SL160A.
Base Part Number
EN39SL160A
EN39SL160A
Sector for Write Protect
(WP#/ACC=L)
Speed
Package
Temperature
Packaging
Content
H
70
B, N
I
P
L
70
B, N
I
P
H
90
B, N
A
P
L
90
B, N
A
P
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
49
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
www.eonssi.com
EN39SL160AH/L
Revisions List
Revision No Description
Date
A
2010/10/15
B
C
Initial Release
1. Add Speed option of 90ns.
2. Add Temperature option of Automotive (-45°C to +125°C).
3. Update ORDERING INFORMATION on page 49.
Correct the typo for the connection diagrams of WFBGA on page 3.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
50
©2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/09/15
2011/02/23
2011/09/15
www.eonssi.com