MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSC010N04LS DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,40V BSC010N04LS 1Description TDSON-8FL(enlargedsourceinterconnection) 8 Features •Optimizedforsychronousrectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters 1 2 7 6 5 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D Parameter Value Unit VDS 40 V S3 6D RDS(on),max 1.0 mΩ G4 5D ID 100 A Qoss 84 nC Qg(0V..10V) 95 nC Type/OrderingCode Package BSC010N04LS TDSON-8 FL 1) Marking 010N04LS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 3 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 100 100 100 38 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 50 A TC=25°C EAS - - 330 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 139 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.9 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.0 0.85 1.3 1.0 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance1) RG - 0.8 1.6 Ω - Transconductance gfs 140 270 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 6800 9520 pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 1900 2660 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 160 320 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Rise time tr - 12 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 46 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Fall time tf - 9 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=20V,ID=50A,VGS=0to10V 11 - nC VDD=20V,ID=50A,VGS=0to10V - 15 21 nC VDD=20V,ID=50A,VGS=0to10V Qsw - 21 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 95 133 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 49 69 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 84 - nC VDS=0.1V,VGS=0to10V Qoss - 84 118 nC VDD=20V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 16 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Min. Typ. Max. IS - - 100 A TC=25°C IS,pulse - - 400 A TC=25°C VSD - 0.81 1 V VGS=0V,IF=50A,Tj=25°C Reverse recovery time trr - 36 72 ns VR=20V,IF=50A,diF/dt=400A/µs Reverse recovery charge Qrr - 50 - nC VR=20V,IF=50A,diF/dt=400A/µs Diode forward voltage 2) 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 6 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 140 100 120 80 ID[A] Ptot[W] 100 80 60 60 40 40 20 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 10 µs 102 1 µs 100 100 µs 0.5 ZthJC[K/W] 1 ms ID[A] 160 TC[°C] 10 ms 1 10 DC 0.2 10 -1 0.1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 1.5 4.5 V 4V 350 3.2 V 5 V 3.5 V 3.5 V 3.2 V 10 V 300 4V 4.5 V 1.0 3V 200 2.8 V 150 5V 7V RDS(on)[mΩ] ID[A] 250 10 V 8V 0.5 100 50 0 0 1 0.0 2 0 20 40 VDS[V] 60 80 100 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 °C 80 0 0 1 25 °C 80 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 8 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.00 2.5 1.80 1.60 2.0 1.20 1.5 VGS(th)[V] RDS(on)[mΩ] 1.40 max 1.00 typ 0.80 1.0 0.60 0.40 0.5 0.20 0.00 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 103 Ciss 25 °C 150 °C 25 °C, max 150 °C, max Coss IF[A] 102 C[pF] 103 Crss 102 101 180 Tj[°C] 101 0 10 20 30 40 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 9 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 20 V 10 8V 25 °C 100 °C 8 VGS[V] 125 °C IAV[A] 32 V 101 6 4 2 100 100 101 102 103 0 0 20 tAV[µs] 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS 6PackageOutlines Figure1OutlineTDSON-8FL,dimensionsinmm/inches Final Data Sheet 11 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS Figure2OutlineFootprintTDSON-8FL Final Data Sheet 12 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS Figure3OutlineTDSON-8FLTape Final Data Sheet 13 Rev.2.2,2014-06-27 OptiMOSTMPower-MOSFET,40V BSC010N04LS RevisionHistory BSC010N04LS Revision:2014-06-27,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2014-06-27 Rev. 2.2 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.2,2014-06-27