DMN2990UFO 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits 20V ID max RDS(ON) max TA = +25°C 0.99Ω @ VGS = 4.5V 750mA 1.2Ω @ VGS = 2.5V 680mA 1.8Ω @ VGS = 1.8V 555mA 2.4Ω @ VGS = 1.5V 471mA Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low Package Profile 0.6mm x 0.4mm Package Footprint Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) General Purpose Interfacing Switch Power Management Functions Analog Switch Case: X2-DFN0604-3 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) X2-DFN0604-3 D S G ESD PROTECTED Top View Package Pin Configuration Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMN2990UFO-7B X2-DFN0604-3 10k/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 4N 4N = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMN2990UFO Document number: DS39088 Rev. 4 - 2 1 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN2990UFO Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Value 20 Unit V VGSS ±8 V ID 750 600 mA IDM 1.5 A Value 840 150 Unit mW °C/W -55 to +150 °C VDSS Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +85°C Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol Steady State Steady State PD RθJA TJ, TSTG Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max BVDSS Unit Test Condition — V VGS = 0V, ID = 250μA IDSS 20 — — Zero Gate Voltage Drain Current — 1 μA VDS = 16V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS — — ±10 μA VGS = ±5V, VDS = 0V VGS(TH) 0.4 — — 0.75 0.5 1.0 0.99 V VDS = VGS, ID = 250μA 0.6 1.2 — 0.8 1.8 — 1.0 2.4 0.6 1.0 V Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD — Ciss Output Capacitance Reverse Transfer Capacitance Coss — — Gate Resistance Crss RG Total Gate Charge Gate-Source Charge — Ω 31 — pF 3.6 2.6 — — pF pF 113 Qg — — 0.41 — — nC Qgs — 0.06 — nC Ω Qgd — 0.05 — nC tD(ON) — — tR ns ns Turn-Off Delay Time tD(OFF) — — 4.5 3.4 tF — Turn-Off Fall Time Notes: 24 — — 12 — VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA Turn-On Delay Time Turn-On Rise Time Gate-Drain Charge VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA ns VGS = 0V, IS = 150mA VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 15V, VGS = 4.5V, RG = 2Ω, ID = 200mA ns 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2990UFO Document number: DS39088 Rev. 4 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN2990UFO 1.0 1 VDS = 5V 0.8 0.8 VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V VGS = 2.5V 0.6 VGS = 3.0V VGS = 4.5V 0.4 VGS = 1.5V 0.2 0.6 0.4 TJ = 150oC 0.2 VGS = 1.2V TJ = -55oC 0 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2 0.9 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic VGS = 1.8V 0.8 0.7 0.6 VGS = 2.5V 0.5 VGS = 4.5V 0.4 ID = 100mA 1.8 ID = 50mA 1.6 ID = 20mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 1 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 6 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = 25oC VGS = 1.0V 0.0 0 TJ = 85oC TJ = 125oC VGS = 10V 0.9 TJ = 150oC 0.8 0.7 TJ = 125oC 0.6 TJ = 85oC 0.5 TJ = 25oC 0.4 0.3 TJ = -55oC 0.2 VGS = 4.5V, ID = 100mA 1.6 VGS = 2.5V, ID = 50mA 1.4 1.2 1 VGS = 1.8V, ID = 20mA 0.8 0.6 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN2990UFO Document number: DS39088 Rev. 4 - 2 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Junction Temperature 3 of 7 www.diodes.com April 2017 © Diodes Incorporated 1.2 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN2990UFO VGS = 1.8V, ID = 20mA 1 VGS = 2.5V, ID = 50mA 0.8 0.6 0.4 VGS = 4.5V, ID = 100mA 0.9 ID = 1mA 0.8 0.7 ID = 250µA 0.6 0.5 0.4 0.2 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 1 100 VGS = 0V f = 1MHz CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 150 0.8 0.6 0.4 TJ = 150oC TJ = 125oC 0.2 TJ = 25oC TJ = 85oC Ciss 10 Coss Crss TJ = -55oC 0 1 0 0.3 0.6 0.9 1.2 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 8 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 10 RDS(ON) Limited 7 PW = 10ms PW = 1ms ID, DRAIN CURRENT (A) 6 5 VGS (V) 2 4 3 2 VDS = 10V, ID = 250mA PW = 100µs 1 DC 0.1 TJ(Max) = 150℃ TC = 25℃ P = 10s W Single Pulse DUT on 1*MRP PW = 1s Board PW = 100ms VGS = 4.5V 1 0 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Qg (nC) 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMN2990UFO Document number: DS39088 Rev. 4 - 2 4 of 7 www.diodes.com 0.1 100 April 2017 © Diodes Incorporated DMN2990UFO r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 304℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN2990UFO Document number: DS39088 Rev. 4 - 2 5 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN2990UFO Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN0604-3 A A1 A3 Seating Plane D b(2x) D2 z1 e E E2 X2-DFN0604-3 Dim Min Max Typ A -- 0.40 0.36 A1 0.00 0.03 0.02 A3 --0.10 b 0.07 0.15 0.10 D 0.55 0.65 0.60 D2 0.15 0.25 0.20 E 0.35 0.45 0.40 E2 0.15 0.25 0.20 e --0.30 k 0.15 --L 0.10 0.18 0.13 z --0.045 z1 --0.10 All Dimensions in mm z L(2x k Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN0604-3 X2 G1 X1 Y2 G Y1 Dimensions G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.075 0.035 0.180 0.260 0.590 0.160 0.270 0.470 Y(2x) X(2x) DMN2990UFO Document number: DS39088 Rev. 4 - 2 6 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN2990UFO IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMN2990UFO Document number: DS39088 Rev. 4 - 2 7 of 7 www.diodes.com April 2017 © Diodes Incorporated