Z ibo Seno Electronic Engineering Co., Ltd. 1N4448/LL4448 Silicon Epitaxial Planar Switching Diode Applications • High-speed switching A A B C This diode is also available in MiniMELF case with the type designation LL4448. A D C DO-35 Dim Min Max A 25.40 — B — 4.00 C — 0.60 D — 2.00 All Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter B LL-34/MiniMELF Dim MIn Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 150 mA Surge Forward Current at t < 1 s IFSM 500 mA Power Dissipation Ptot Junction Temperature Storage Temperature Range 1) 500 1) mW Tj 200 O C Tstg - 65 to + 200 O C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω 1N4448 / LL4448 1 of 3 Symbol Min. Max. Unit VF 0.62 - 0.72 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R 100 - V Ctot - 4 pF trr - 4 ns www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 1N4448/LL4448 Silicon Epitaxial Planar Switching Diode Dynamic forward resistance versus forward current Forward characteristics mA 10 1N 4448 1N 4448 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 1 0 2V 1 10 -1 10 -2 10 2 mA 10 1 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 1N 4448 1N 4448 Tj=25 oC f=1MHz 900 1.1 800 P tot Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 0.7 100 0 0 0 200 oC 100 0 Tamb 1N4448 / LL4448 2 4 8 6 10 V VR 2 of 3 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 1N4448/LL4448 Silicon Epitaxial Planar Switching Diode Leakage current versus junction temperature nA 10 4 1N 4448 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR =20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duratin A 100 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1N 4448 v=tp/T I 5 4 3 T=1/fp I FRM 2 v=0 tp 10 t I FRM 0.1 5 4 3 2 0.2 1 0.5 T 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp 1N4448 / LL4448 3 of 3 www.senocn.com Alldatasheet