SUNMATE ES1EF Surface mount super fast rectifier diode Datasheet

ES1AF - ES1JF
SURFACE MOUNT SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 1.0 A
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Super-Fast Recovery Time
B
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
E
Mechanical Data
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Case: SMAF,Molded Plastic
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Terminals: Solder Plated, Solderable
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per MIL-STD-750, Method 2026
Polarity:Color band denotes cathode end
Mounting Position:Any
Weight:0.0018 ounce, 0.064 grams
SMAF
Dim Min Max Typ
A 4.75 4.85 4.80
B 3.68 3.72 3.70
C 2.57 2.63 2.60
D 0.097 1.03 1.00
E 1.38 1.42 1.40
H 0.13 0.17 0.15
L 0.63 0.67 0.65
All Dimensions in mm
D
H
L
E
A
Maximum Ratings and Electrical Characteristics
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
ES1DF ES1EF ES1GF
ES1JF
Unit
VRRM
VRWM
VR
50
100
150
200
300
400
600
V
VR(RMS)
35
70
105
140
210
280
420
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
5.0
500
µA
Reverse Recovery Time (Note 1)
trr
35
nS
Typical Junction Capacitance (Note 2)
Cj
10
pF
RJL
35
°C/W
Tj, TSTG
-65 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 120°C
ES1AF ES1BF ES1CF
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
0.95
1.25
1.7
V
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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IF, INSTANTANEOUS FORWARD CURRENT (A)
Tj = 25°C
Pulse width = 300µs
10
ES1EF - ES1GF
ES1AF- ES1DF
1.0
ES1JF
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
30
100
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
20
10
10
1
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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