Order this document by MPSA70/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –40 — Vdc Emitter – Base Breakdown Voltage (IE = –100 µAdc, IC = 0) V(BR)EBO –4.0 — Vdc ICBO — –100 nAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = –30 Vdc, IE = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSA70 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) hFE 40 400 — Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) VCE(sat) — –0.25 Vdc fT 125 — MHz Cobo — 4.0 pF ON CHARACTERISTICS SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA70 TYPICAL NOISE CHARACTERISTICS (VCE = – 5.0 Vdc, TA = 25°C) ā 10 7.0 IC = 10 µA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 µA 3.0 100 µA 300 µA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 µA 1.0 0.7 0.5 100 µA 30 µA 0.3 0.2 1.0 10 µA 0.1 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 10 k 20 50 Figure 1. Noise Voltage 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k Figure 2. Noise Current NOISE FIGURE CONTOURS (VCE = – 5.0 Vdc, TA = 25°C) 1.0 M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 k 10 k 0.5 dB 5.0 k 1.0 dB 2.0 k 1.0 k 500 2.0 dB 3.0 dB 200 100 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) ā 1.0 M 500 k 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 k 10 k 0.5 dB 5.0 k 1.0 dB 2.0 k 1.0 k 500 2.0 dB 3.0 dB 200 100 500 700 1.0 k 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0 M 500 k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0 k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200 k 100 k 50 k ƪ Noise Figure is Defined as: 20 k 10 k NF 0.5 dB 5.0 k 2.0 k 1.0 k 500 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 + 20 log10 en2 ƫ ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 500 700 1.0 k IC, COLLECTOR CURRENT (µA) Figure 5. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSA70 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 – 55°C 100 80 MPSA70 VCE = 1.0 V VCE = 10 V 60 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TA = 25°C MPSA70 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 150 µA 40 100 µA 50 µA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages 4 40 Figure 8. Collector Characteristics 1.4 0.2 250 µA 60 Figure 7. Collector Saturation Region 0.1 IB = 400 µA 350 µA 50 100 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 25°C to 125°C 0 – 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 qVB for VBE 0.2 – 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 10. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA70 TYPICAL DYNAMIC CHARACTERISTICS 1000 700 500 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 300 ā ts 300 200 100 70 50 t, TIME (ns) t, TIME (ns) 200 30 tr 20 10 7.0 5.0 1.0 100 70 50 tf 30 td @ VBE(off) = 0.5 V 20 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 10 –1.0 100 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA) ā ā ā ā ā – 50 – 70 –100 ā ā ā Figure 12. Turn–Off Time 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 11. Turn–On Time 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance 10 MPSA70 hfe ≈ 200 @ IC = –1.0 mA 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 VCE = –10 Vdc f = 1.0 kHz TA = 25°C hoe, OUTPUT ADMITTANCE (m mhos) 20 hie , INPUT IMPEDANCE (k Ω ) VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 100 70 50 30 20 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPSA70 hfe ≈ 200 @ IC = 1.0 mA 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 15. Input Impedance Motorola Small–Signal Transistors, FETs and Diodes Device Data 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 16. Output Admittance 5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA70 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 400 200 The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon T J(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 100 µs 100 TC = 25°C dc 60 1.0 s TA = 25°C 40 dc 20 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 10 µs 1.0 ms 2.0 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 Figure 18. Active–Region Safe Operating Area 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 V 10–1 A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find Z θJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 10–2 The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 –4 0 –2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) For more information, see AN–569. Figure 19. Typical Collector Leakage Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA70 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7 MPSA70 Motorola reserves the right to make changes without further notice to any products herein. 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