Elpida MC-4516DA726XFC-A10 16 m-word by 72-bit synchronous dynamic ram module registered type Datasheet

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516DA726
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
REGISTERED TYPE
EO
Description
The MC-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of
128M SDRAM: µPD45128841 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
L
Features
• 16,777,216 words by 72 bits organization (ECC type)
• Clock frequency and access time from CLK
Part number
MC-4516DA726EFC-A10
Clock frequency
Pr
MC-4516DA726EFC-A80
/CAS latency
CL = 3
Access time from CLK
(MAX.)
(MAX.)
125 MHz
6 ns
PC100 Registered DIMM
Rev. 1.2 Compliant
CL = 2
100 MHz
6 ns
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
CL = 3
MC-4516DA726PFC-A10
CL = 3
CL = 2
CL = 2
CL = 3
MC-4516DA726XFC-A10
CL = 3
CL = 2
125 MHz
6 ns
100 MHz
6 ns
100 MHz
6 ns
77 MHz
7 ns
125 MHz
6 ns
100 MHz
6 ns
100 MHz
6 ns
CL = 2
77 MHz
t
uc
MC-4516DA726XFC-A80
od
MC-4516DA726PFC-A80
Module type
7 ns
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0074N10 (1st edition)
(Previous No. M13203EJ8V0DS00)
Date Published January 2001 CP(K)
Printed in Japan
This product became EOL in March, 2004.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
MC-4516DA726
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles / 64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
EO
• Registered type
• Serial PD
Ordering Information
Part number
Clock frequency
Package
Mounted devices
(MAX.)
MC-4516DA726EFC-A80
125 MHz
168-pin Dual In-line Memory Module 9 pieces of µPD45128841G5 (Rev. E)
MC-4516DA726EFC-A10
100 MHz
(Socket Type)
L
MC-4516DA726PFC-A80
125 MHz
Edge connector: Gold plated
MC-4516DA726PFC-A10
100 MHz
38.1 mm height
MC-4516DA726XFC-A80
125 MHz
MC-4516DA726XFC-A10
100 MHz
(10.16 mm (400) TSOP (II))
9 pieces of µPD45128841G5 (Rev. P)
(10.16 mm (400) TSOP (II))
9 pieces of µPD45128841G5 (Rev. X)
(10.16 mm (400) TSOP (II))
od
Pr
t
uc
2
Data Sheet E0074N10
MC-4516DA726
Pin Configuration
168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
/xxx indicates active low signal.
EO
85
86
87
88
89
90
91
92
93
94
VSS
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
CB4
CB5
VSS
NC
NC
Vcc
/CAS
DQMB4
DQMB5
NC
/RAS
VSS
A1
A3
A5
A7
A9
BA0 (A13)
A11
Vcc
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
CLK1
NC
VSS
CKE0
NC
DQMB6
DQMB7
NC
Vcc
NC
NC
CB6
CB7
VSS
DQ48
DQ49
DQ50
DQ51
Vcc
DQ52
NC
NC
REGE
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
VSS
CLK3
NC
SA0
SA1
SA2
Vcc
1
2
3
4
5
6
7
8
9
10
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
CB0
CB1
VSS
NC
NC
Vcc
/WE
DQMB0
DQMB1
/CS0
NC
VSS
A0
A2
A4
A6
A8
A10
BA1(A12)
Vcc
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Vcc
CLK0
VSS
NC
/CS2
DQMB2
DQMB3
NC
Vcc
NC
NC
CB2
CB3
VSS
DQ16
DQ17
DQ18
DQ19
Vcc
DQ20
NC
NC
NC
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
VSS
CLK2
NC
WP
SDA
SCL
Vcc
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
L
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
VSS
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
Pr
A0 - A11
: Address Inputs
[Row: A0 - A11, Column: A0 - A9]
BA0 (A13), BA1 (A12) : SDRAM Bank Select
DQ0 - DQ63, CB0 - CB7 : Data Inputs/Outputs
: Clock Input
CKE0
: Clock Enable Input
WP
: Write Protect
/CS0, /CS2
: Chip Select Input
/RAS
: Row Address Strobe
od
CLK0 - CLK3
: Column Address Strobe
/WE
: Write Enable
DQMB0 - DQMB7
: DQ Mask Enable
t
uc
Data Sheet E0074N10
/CAS
SA0 - SA2
: Address Input for EEPROM
SDA
: Serial Data I/O for PD
SCL
VCC
VSS
: Clock Input for PD
: Power Supply
: Ground
REGE
: Register / Buffer Enable
NC
: No Connection
3
MC-4516DA726
Block Diagram
/RCS0
RDQMB4
RDQMB0
30 pF
10 Ω
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
DQ 7 DQM
DQ 6
DQ 5
DQ 4
D0
DQ 3
DQ 2
DQ 1
DQ 0
/CS
DQ 7 DQM
DQ 6
DQ 5
DQ 4
D1
DQ 3
DQ 2
DQ 1
DQ 0
/CS
DQ 2 DQM
DQ 0
DQ 7
DQ 5
D2
DQ 3
DQ 1
DQ 6
DQ 4
/CS
RDQMB1
10 Ω
30 pF
DQ 32
DQ 33
DQ 34
DQ 35
DQ 36
DQ 37
DQ 38
DQ 39
DQ 0 DQM
DQ 1
DQ 2
DQ 3
D5
DQ 4
DQ 5
DQ 6
DQ 7
RDQMB5
EO
15 pF
10 Ω
DQ 8
DQ 9
DQ 10
DQ 11
DQ 12
DQ 13
DQ 14
DQ 15
15 pF
L
/RCS2
RDQMB2
10 Ω
30 pF
10 Ω
30 pF
/CS
DQ 0DQM
DQ 1
DQ 2
DQ 3
D6
DQ 4
DQ 5
DQ 6
DQ 7
DQ 40
DQ 41
DQ 42
DQ 43
DQ 44
DQ 45
DQ 46
DQ 47
10 Ω
CB 0
CB 1
CB 2
CB 3
CB 4
CB 5
CB 6
CB 7
RDQMB3
10 Ω
CLK0
CLK : D2,D3,D6
10 Ω
30 pF
DQ 7 DQM
DQ 6
DQ 5
DQ 4
D3
DQ 3
DQ 2
DQ 1
DQ 0
/CS
DQ 48
DQ 49
DQ 50
DQ 51
DQ 52
DQ 53
DQ 54
DQ 55
PLL
CLK : D4,D7,D8
/CS
DQ 0 DQM
DQ 1
DQ 2
DQ 3
D7
DQ 4
DQ 5
DQ 6
DQ 7
10 Ω
A0 - A9
/CS
RA0 - RA9
DQ 56
DQ 57
DQ 58
DQ 59
DQ 60
DQ 61
DQ 62
DQ 63
SERIAL PD
A0 - A9 : D0 - D8
DQ 0 DQM
DQ 1
DQ 2
DQ 3
D8
DQ 4
DQ 5
DQ 6
DQ 7
/RRAS
/RAS : D0 - D8
/RCAS
/CAS : D0 - D8
/RWE
/WE : D0 - D8
Register1
A1
47 kΩ
VCC
Register2
LE
10 kΩ
Remarks 1. The value of all resistors of DQs is 10 Ω.
2. D0 - D18: µPD45128841 (4M words × 8 bits × 4 banks)
3. REGE ≤ VIL: Buffer mode
REGE ≥ VIH: Register mode
4. Register: HD74ALVC162835
PLL: HD74CDC2509B
Data Sheet E0074N10
D0 - D8,
Register1, Register2, PLL
RA10, RA11,
RBA0, RBA1
A10, A11,
BA0, BA1 : D0 - D8
RCKE0
CKE : D0 - D8
/RCS2
15 pF
VCC
D0 - D8,
Register1, Register2, PLL
C
RDQMB2, 3, 6, 7
/CS2
15 pF
WP
A2
SA0 SA1 SA2
CKE0
DQMB2, 3, 6, 7
/RCS0
LE
/CS
A10 - A11, BA0, BA1
RDQMB0, 1, 4, 5
/CS0
A0
t
uc
/RAS
DQMB0, 1, 4, 5
SDA
SCL
V SS
/CAS
/WE
REGE
DQ 7 DQM
DQ 6
DQ 5
DQ 4
D4
DQ 3
DQ 2
DQ 1
DQ 0
CLK : Register 1,
Register 2
12 pF
od
DQ 24
DQ 25
DQ 26
DQ 27
DQ 28
DQ 29
DQ 30
DQ 31
10 Ω
30 pF
10 Ω
CLK1
CLK2
CLK3
RDQMB7
30 pF
CLK : D0,D1,D5
RDQMB6
Pr
DQ 16
DQ 17
DQ 18
DQ 19
DQ 20
DQ 21
DQ 22
DQ 23
4
/CS
MC-4516DA726
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
VCC
–0.5 to +4.6
V
Voltage on input pin relative to GND
VT
–0.5 to +4.6
V
EO
Voltage on power supply pin relative to GND
Short circuit output current
IO
50
mA
Power dissipation
PD
12
W
Operating ambient temperature
TA
0 to 70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
L
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
High level input voltage
Low level input voltage
Operating ambient temperature
Input capacitance
TYP.
Symbol
VCC
3.0
3.3
3.6
V
VIH
2.0
VCC + 0.3
V
VIL
–0.3
+0.8
V
TA
0
70
°C
MAX.
Unit
pF
Test condition
MIN.
TYP.
MAX.
CI1
A0 – A11, BA0 (A13), BA1 (A12),
/RAS, /CAS, /WE
4
10
CI2
CLK0
15
25
CI3
CKE0
4
10
CI4
/CS0, /CS2
4
10
CI5
DQMB0 - DQMB7
CI/O
DQ0 - DQ63, CB0 - CB7
Data Sheet E0074N10
Unit
t
uc
Data input/output capacitance
MIN.
od
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Condition
Pr
Supply voltage
Symbol
3
10
5
13
pF
5
MC-4516DA726
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter
Operating current
Symbol
ICC1
Test condition
Burst length = 1
Grade
/CAS latency = 2
tRC ≥ tRC (MIN.), IO = 0 mA
/CAS latency = 3
Precharge standby current in
EO
power down mode
Precharge standby current in
ICC2P
ICC2PS
ICC2N
non power down mode
Active standby current in
power down mode
MAX.
Unit Notes
-A80
1,200
mA
-A10
1,200
-A80
1,200
-A10
1,200
CKE ≤ VIL (MAX.), tCK = 15 ns
259
CKE ≤ VIL (MAX.), tCK = ∞
89
CKE ≥ VIH (MIN.), tCK = 15 ns, /CS ≥ VIH (MIN.),
430
1
mA
mA
Input signals are changed one time during 30 ns.
ICC2NS
CKE ≥ VIH (MIN.), tCK = ∞ ,
152
Input signals are stable.
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL (MAX.), tCK = 15 ns
295
CKE ≤ VIL (MAX.), tCK = ∞
116
CKE ≥ VIH (MIN.), tCK = 15 ns, /CS ≥ VIH (MIN.),
520
L
Active standby current in
MIN.
non power down mode
mA
mA
Input signals are changed one time during 30 ns.
ICC3NS
CKE ≥ VIH (MIN.), tCK = ∞ ,
260
Input signals are stable.
(Burst mode)
ICC4
tCK ≥ tCK (MIN.), IO = 0 mA
/CAS latency = 2
Pr
Operating current
/CAS latency = 3
CBR (Auto) Refresh current
ICC5
tRC ≥ tRC (MIN.)
/CAS latency = 2
-A80
1,380
-A10
1,155
-A80
1,605
-A10
1,425
-A80
2,370
-A10
2,370
od
/CAS latency = 3
Self refresh current
ICC6
CKE ≤ 0.2 V
Input leakage current
II (L)
VI = 0 to 3.6 V, All other pins not under test = 0 V
Output leakage current
IO (L)
High level output voltage
Low level output voltage
-A80
2,370
-A10
2,370
mA
2
mA
3
268
mA
–10
+10
µA
DOUT is disabled, VO = 0 to 3.6 V
–1.5
+1.5
µA
VOH
IO = –4.0 mA
2.4
VOL
IO = +4.0 mA
t
uc
V
0.4
V
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open.
In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
6
Data Sheet E0074N10
MC-4516DA726
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Test Conditions
Parameter
AC high level input voltage / low level input voltage
Input timing measurement reference level
Transition time (Input rise and fall time)
Unit
2.4 / 0.4
V
1.4
V
1
ns
1.4
V
tCK
tCH
CLK
tCL
2.4 V
1.4 V
0.4 V
tSETUP tHOLD
2.4 V
1.4 V
L
EO
Output timing measurement reference level
Value
Input
0.4 V
tAC
tOH
Output
od
Pr
t
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Data Sheet E0074N10
7
MC-4516DA726
Synchronous Characteristics
Parameter
Symbol
-A80
MIN.
Clock cycle time
Access time from CLK
-A10
MAX.
Unit
MIN.
MAX.
/CAS latency = 3
tCK3
8
(125 MHz)
10
(100 MHz)
ns
/CAS latency = 2
tCK2
10
(100 MHz)
13
(77 MHz)
ns
/CAS latency = 3
tAC3
6
6
ns
1
/CAS latency = 2
tAC2
6
7
ns
1
50
125
50
100
MHz
Input CLK duty cycle
40
60
40
60
%
EO
Input clock frequency
Data-out hold time
Note
/CAS latency = 3
tOH3
3
3
ns
1
/CAS latency = 2
tOH2
3
3
ns
1
Data-out low-impedance time
tLZ
0
0
ns
Data-out high- impedance time
/CAS latency = 3
tHZ3
3
6
3
6
ns
/CAS latency = 2
tHZ2
3
6
3
7
ns
tDS
2
2
ns
tDH
1
1
ns
Address setup time
tAS
2
2
ns
Address hold time
tAH
1
1
ns
CKE setup time
tCKS
2
2
ns
CKE hold time
tCKH
1
1
ns
CKE setup time (Power down exit)
tCKSP
2
2
ns
Command (/CS0, /CS2, /RAS, /CAS, /WE, DQMB0 -
tCMS
2
2
ns
tCMH
1
1
ns
Data-in setup time
L
Data-in hold time
Command (/CS0, /CS2, /RAS, /CAS, /WE, DQMB0 DQMB7) hold time
Note 1. Output load
od
Pr
DQMB7) setup time
Z = 50 Ω
Output
50 pF
8
Data Sheet E0074N10
t
uc
Remark These specifications are applied to the monolithic device.
MC-4516DA726
Asynchronous Characteristics
Parameter
Symbol
-A 80
MIN.
-A 10
MAX.
MIN.
Unit
MAX.
tRC
70
ACT to PRE command period
tRAS
48
PRE to ACT command period
tRP
20
20
ns
Delay time ACT to READ/WRITE command
tRCD
20
20
ns
ACT(one) to ACT(another) command period
tRRD
16
20
ns
Data-in to PRE command period
tDPL
−1CLK+8
−1CLK+10
ns
EO
REF to REF/ACT command period
70
120,000
50
ns
120,000
ns
Data-in to ACT(REF) command
/CAS latency = 3
tDAL3
20
20
ns
period (Auto precharge)
/CAS latency = 2
tDAL2
20
20
ns
Mode register set cycle time
Transition time
Refresh time (4,096 refresh cycles)
tRSC
2
tT
0.5
tREF
2
30
Note
1
64
CLK
30
ns
64
ms
L
od
Pr
t
uc
Data Sheet E0074N10
9
MC-4516DA726
Serial PD
(1/2)
Byte No.
0
Function Described
Defines the number of bytes written into
serial PD memory
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
80H
1
0
0
0
0
0
0
0
Notes
128 bytes
Total number of bytes of serial PD memory
08H
0
0
0
0
1
0
0
0
256 bytes
2
Fundamental memory type
04H
0
0
0
0
0
1
0
0
SDRAM
3
Number of rows
0CH
0
0
0
0
1
1
0
0
12 rows
4
Number of columns
0AH
0
0
0
0
1
0
1
0
10 columns
5
Number of banks
01H
0
0
0
0
0
0
0
1
1 bank
EO
1
6
Data width
48H
0
1
0
0
1
0
0
0
72 bits
7
Data width (continued)
00H
0
0
0
0
0
0
0
0
0
8
Voltage interface
01H
0
0
0
0
0
0
0
1
LVTTL
9
CL = 3 Cycle time
-A80
80H
1
0
0
0
0
0
0
0
8 ns
-A10
A0H
1
0
1
0
0
0
0
0
10 ns
10
CL = 3 Access time
-A80
60H
0
1
1
0
0
0
0
0
6 ns
11
DIMM configuration type
-A10
L
60H
0
1
1
0
0
0
0
0
6 ns
02H
0
0
0
0
0
0
1
0
ECC
Refresh rate/type
80H
1
0
0
0
0
0
0
0
Normal
13
SDRAM width
08H
0
0
0
0
1
0
0
0
x8
14
Error checking SDRAM width
08H
0
0
0
0
1
0
0
0
x8
15
Minimum clock delay
01H
0
0
0
0
0
0
0
1
1 clock
16
Burst length supported
8FH
1
0
0
0
1
1
1
1
1, 2, 4, 8, F
17
Number of banks on each SDRAM
04H
0
0
0
0
0
1
0
0
4 banks
18
/CAS latency supported
06H
0
0
0
0
0
1
1
0
2, 3
19
/CS latency supported
20
/WE latency supported
Pr
12
01H
0
0
0
0
0
0
0
1
0
01H
0
0
0
0
0
0
0
1
0
Registered
SDRAM module attributes
1FH
0
0
0
1
1
1
1
1
22
SDRAM device attributes : General
0EH
0
0
0
0
1
1
1
0
23
CL = 2 Cycle time
-A80
A0H
1
0
1
0
0
0
0
0
10 ns
-A10
D0H
1
1
0
1
0
0
0
0
13 ns
-A80
60H
0
1
1
0
0
0
0
0
6 ns
-A10
70H
0
1
1
1
0
0
0
0
7 ns
00H
0
0
0
0
0
0
0
0
14H
0
0
0
1
0
1
0
0
CL = 2 Access time
25-26
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21
24
tRP(MIN.)
-A80
-A10
14H
0
0
0
1
0
1
0
0
20 ns
28
tRRD(MIN.)
-A80
10H
0
0
0
1
0
0
0
0
16 ns
-A10
14H
0
0
0
1
0
1
0
0
20 ns
29
tRCD(MIN.)
-A80
14H
0
0
0
1
0
1
0
0
20 ns
-A10
14H
0
0
0
1
0
1
0
0
20 ns
-A80
30H
0
0
1
1
0
0
0
0
48 ns
-A10
32H
0
0
1
1
0
0
1
0
50 ns
20H
0
0
1
0
0
0
0
0
128M bytes
31
tRAS(MIN.)
Module bank density
Data Sheet E0074N10
20 ns
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27
30
10
Hex
MC-4516DA726
(2/2)
Byte No.
Hex
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
32
Command and address signal input
setup time
Function Described
20H
0
0
1
0
0
0
0
0
2 ns
Notes
33
Command and address signal input hold
time
10H
0
0
0
1
0
0
0
0
1 ns
34
Data signal input setup time
20H
0
0
1
0
0
0
0
0
2 ns
35
Data signal input hold time
10H
0
0
0
1
0
0
0
0
1 ns
36-61
EO
62
SPD revision
63
Checksum for bytes 0 - 62
64-71
72
73-90
91
00H
0
0
0
0
0
0
0
0
12H
0
0
0
1
0
0
1
0
-A80
21H
0
0
1
0
0
0
0
1
-A10
87H
1
0
0
0
0
1
1
1
1.2 A
Manufacture’s JEDEC ID code
Manufacturing location
Manufacture’s P/N
Revision Code
Manufacturing date
95-98
Assembly serial number
99-125
Mfg specific
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93-94
126
Intel specification frequency
64H
0
1
1
0
0
1
0
0
127
Intel specification /CAS
-A80
87H
1
0
0
0
0
1
1
1
latency support
-A10
85H
1
0
0
0
0
1
0
1
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Timing Chart
100 MHz
Refer to the µPD45128441, 45128841, 45128163 Data sheet (E0031N).
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Data Sheet E0074N10
11
MC-4516DA726
Package Drawing
168-PIN DUAL IN-LINE MODULE (SOCKET TYPE)
A (AREA B)
Z
Y
M1 (AREA B)
N
EO
R
M2 (AREA A)
Q
L
A
B
H
S
B
G
U
(OPTIONAL HOLES)
K
C
J
E
T
D
L
I
M
A1 (AREA A)
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ITEM
detail of A part
V
D2
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W
detail of B part
P
D1
133.35
A1
133.35±0.13
B
11.43
C
36.83
D
6.35
D1
2.0
D2
3.125
E
G
54.61
6.35
H
1.27 (T.P.)
I
J
8.89
24.495
K
L
42.18
17.78
M
38.1±0.13
M1
18.32
M2
19.78
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X
MILLIMETERS
A
N
4.0 MAX.
P
1.0
Q
R
R2.0
4.0±0.10
S
φ 3.0
T
U
1.27±0.1
4.0 MIN.
V
W
0.2±0.15
1.0±0.05
X
Y
2.54±0.10
3.0 MIN.
Z
3.0 MIN.
M168S-50A106
12
Data Sheet E0074N10
MC-4516DA726
[MEMO]
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Data Sheet E0074N10
13
MC-4516DA726
[MEMO]
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14
Data Sheet E0074N10
MC-4516DA726
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
EO
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
L
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
3
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related specifications governing the devices.
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
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not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
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Data Sheet E0074N10
15
MC-4516DA726
CAUTION FOR HANDLING MEMORY MODULES
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When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these
components to prevent damaging them.
When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact
with other modules may cause excessive mechanical stress, which may damage the modules.
L
• The information in this document is current as of September, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of Elpida's data sheets or
data books, etc., for the most up-to-date specifications of Elpida semiconductor products. Not all
products and/or types are available in every country. Please check with an Elpida Memory, Inc. for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of Elpida. Elpida assumes no responsibility for any errors that may appear in this document.
• Elpida does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of Elpida semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of Elpida or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. Elpida assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While Elpida endeavours to enhance the quality, reliability and safety of Elpida semiconductor products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in Elpida
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• Elpida semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of Elpida semiconductor products is "Standard" unless otherwise expressly specified in
Elpida's data sheets or data books, etc. If customers wish to use Elpida semiconductor products in
applications not intended by Elpida, they must contact an Elpida Memory, Inc. in advance to determine
Elpida's willingness to support a given application.
(Note)
(1) "Elpida" as used in this statement means Elpida Memory, Inc. and also includes its majority-owned
subsidiaries.
(2) "Elpida semiconductor products" means any semiconductor product developed or manufactured by or
for Elpida (as defined above).
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M8E 00. 4
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