Foshan BTB20 Triac in a to-220 plastic package Datasheet

BTB20
Rev.E Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-220 塑封封装双向可控硅。Triac in a TO-220 Plastic Package.

特征
/ Features
中电流可控硅,低通态压降,高可靠性和稳定性,低热敏电阻特性,高转换性能。
Medium current triac, Low on state voltage drop,High reliability and stability,Low thermal resistance,
High commutation performances.
用途
/
Applications
用于电源交流开关转换,如感应或电阻负载的相位控制和静态切换电路等。
For power AC switching operations.Such as phase control and static switching on inductive or
resistive load,etc.
内部等效电路
引脚排列
1
2
/ Equivalent Circuit
/ Pinning
3
PIN1:Main Terminal 1
放大及印章代码
PIN 2:Main Terminal 2
PIN 3:Gate
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BTB20
Rev.E Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
On-state rms current(full sine wave
TC=70℃)
Non repetitive surge peak on-state
current(full cycle, Tj initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, Tj initial = 25 °C)
I2t value for fusing
Critical rate of rise of on-state current
IG =2xIGT, tr≤100 ns(F=50Hz Tj=125℃)
Critical rate of rise of on-state current
IG =2xIGT, tr≤100 ns(Tj=125℃)
Non repetitive peak off-state
Voltage(tp = 10 ms Tj = 25° C)
Peak gate current(tp =20μs Tj=125℃)
Peak positive gate voltage(tp =20μs)
Average gate power dissipation(Tj=125℃)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case for AC
Junction to case for DC
电性能参数
符号
Symbol
IGT(1)
IH(2)
IL
dV/dt (2)
(dV /dt)c (2)
数值
Rating
600/700
单位
Unit
V
IT(RMS)
20
A
210
A
200
A
200
A2s
ITSM(F=50Hz
t=10ms)
ITSM(F=60Hz
2
t=8.3ms)
I t(tp=10ms)
50
dI/dt
A/μs
100
VDSM/VRSM
IGM
VGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-c)
Rth(j-c)
VDRM/VRRM
+ 100
4.0
16
1.0
-40~125
-40~150
60
2.1
2.8
V
A
V
W
℃
℃
℃/W
/ Electrical Characteristics(Ta=25℃)
测试条件
Test Conditions
ALL
Min.
Max.
Max.
ALL
Min.
ALL
VD=12V RL=33Ω
VD=VDRM RL=3.3KΩ
Tj=125℃
IT=500mA,gate open
IG=1.2IGT
Max.
I-III
II
I- II -III
VD = 67 % VDRM ,gate open
Tj = 125° C
(dI/dt)c = 20A/ms
BTB20
信号区
Quadrant
VGT
VGD
符号
Symbol
VDRM/VRRM
Tj = 125° C
Typ.
Max.
Typ.
Min.
Typ.
Min.
BW
2.0
50
75
50
90
750
500
36
18
CW
1.0
35
单位
Unit
mA
1.5
V
0.2
V
50
80
500
250
22
11
mA
mA
V/μs
V/μs
Note 1:minimum IGT is guaranted at 5% of IGT max.
Note 2:for both polarities of A2 referenced to A1.
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BTB20
Rev.E Mar.-2016
电性能参数
符号
Symbol
VTM(1)
IDRM
IRRM
DATA SHEET
/ Electrical Characteristics(Ta=25℃)
ITM=28A
测试条件
Test Conditions
tp =380μs
Tj=125℃
VDRM = VRRM
Max.
数值
Value
1.7
单位
Unit
V
Tj=25℃
Max.
10
μA
Tj=125℃
Max.
3.0
mA
Note1. for both polarities of A2 referenced to A1
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BTB20
Rev.E Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BTB20
Rev.E Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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BTB20
Rev.E Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
60B
****
BTB20

说明:
BR: 

为公司代码
BTB20: 
为产品型号
60B: 

为 VRRM 和 IGT 分档代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
BTB20:
Product Type.
60B:
VRRM/IGT Bracket code
****:
http://www.fsbrec.com

Lot No. Code, code change with Lot No.
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BTB20
Rev.E Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
TO-220/F
套管包装
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
散件包装
TO-220/F
时间:10±1 sec.
/ BULK
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
Inner Box 盒
Outer Box 箱
200
10
2,000
5
10,000
135×190
237×172×102
560×245×195
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
50
20
1,000
5
5,000
532×31.4×5.5
555×164×50
575×290×180
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
/ Notices
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