BSS308PE OptiMOS™ P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS(on),max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101 3 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -2.0 T A=70 °C -1.6 Pulsed drain current I D,pulse T A=25 °C -8.0 Avalanche energy, single pulse E AS I D=-2 A, R GS=25 Ω -10.7 Reverse diode dv /dt dv /dt I D=-2 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 [email protected] www.zpsemi.com 6 Unit A mJ kV/µs ±20 V 0.5 W -55 ... 150 °C 2 (2kV to 4kV) 260 °C °C 55/150/56 °C 1 of 3 BSS308PE Parameter Values Symbol Conditions Unit min. typ. max. - - 250 -30 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA Gate threshold voltage V GS(th) V DS=VGS, I D=-11µA -2.0 -1.5 -1.0 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C - - -1 V DS=-30V, V GS=0V, T j=150 °C - - -100 V μA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 μA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-1.7 A - 88 130 mΩ V GS=-10 V, I D=-2 A - 62 80 4.6 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.6 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. [email protected] www.zpsemi.com 2 of 3 BSS308PE Parameter Values Symbol Conditions Unit min. typ. max. - 376 500 - 196 261 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 12 18 Turn-on delay time t d(on) - 5.6 - Rise time tr - 7.7 - Turn-off delay time t d(off) - 15.3 - Fall time tf - 2.8 - Gate to source charge Q gs - -1.2 - Gate to drain charge Q gd - -0.6 - Gate charge total Qg - -5.0 - Gate plateau voltage V plateau - -3.1 - V - - -0.4 A - - -8.4 - -0.8 -1.1 V - 14 - ns - -5.9 - nC V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-2 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=-15 V, I D=-2 A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr [email protected] T A=25 °C V GS=0 V, I F=-2 A, T j=25 °C V R=10 V, I F=-2 A, di F/dt =100 A/µs www.zpsemi.com 3 of 3