ON CM1213A-04S7 1, 2 and 4-channel low capacitance esd protection array Datasheet

CM1213A, SZCM1213A
1, 2 and 4-Channel
Low Capacitance
ESD Protection Arrays
Product Description
The CM1213A family of diode arrays has been designed to provide
ESD protection for electronic components or subsystems requiring
minimal capacitive loading. These devices are ideal for protecting
systems with high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a pair of diodes in
series which steer the positive or negative ESD current pulse to either
the positive (VP) or negative (VN) supply rail. A Zener diode is
embedded between VP and VN, offering two advantages. First, it
protects the VCC rail against ESD strikes, and second, it eliminates the
need for a bypass capacitor that would otherwise be needed for
absorbing positive ESD strikes to ground. The CM1213A will protect
against ESD pulses up to 8 kV per the IEC 61000−4−2 standard.
These devices are particularly well−suited for protecting systems
using high−speed ports such as USB 2.0, IEEE1394 (Firewire®,
iLinkt), Serial ATA, DVI, HDMI and corresponding ports in
removable storage, digital camcorders, DVD−RW drives and other
applications where extremely low loading capacitance with ESD
protection are required in a small package footprint.
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SOT23−3
SO SUFFIX
CASE 318
SC70−6
S7 SUFFIX
CASE 419AD
•
•
•
•
•
•
Note: For 6 and 8−channel Devices, See the CM1213 Datasheet
Provides ESD Protection to IEC61000−4−2 Level 4
♦ ±8 kV Contact Discharge
Low Channel Input Capacitance of 0.85 pF Typical
Minimal Capacitance Change with Temperature and Voltage
Channel Input Capacitance Matching of 0.02 pF Typical is Ideal for
Differential Dignals
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
• USB2.0 Ports at 480 Mbps in Desktop PCs, Notebooks and Peripherals
• IEEE1394 Firewire® Ports at 400 Mbps/800 Mbps
• DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs,
•
•
•
MSOP−10
MR SUFFIX
CASE 846AE
XXXMG
G
XXXMG
G
• One, Two, and Four Channels of ESD Protection
LCD Displays
Serial ATA Ports in Desktop PCs and Hard Disk Drives
PCI Express Ports
General Purpose High−Speed Data Line ESD Protection
SC−74
SO SUFFIX
CASE 318F
MARKING DIAGRAM
Features
•
SOT−143
SR SUFFIX
CASE 318A
1
1
XXX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
CM1213A−01SO,
SZCM1213A−01SO
SOT23−3
(Pb−Free)
3,000 /
Tape & Reel
CM1213A−02SR,
SZCM1213A−02SR
SOT143−4
(Pb−Free)
3,000 /
Tape & Reel
CM1213A−02SO
SC−74
(Pb−Free)
3,000 /
Tape & Reel
CM1213A−04S7
SC70−6
(Pb−Free)
MSOP−10
(Pb−Free)
3,000 /
Tape & Reel
4,000 /
Tape & Reel
CM1213A−04MR
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges
are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production
test to verify that all of the tested parameters are within spec after the 1000 strikes.
© Semiconductor Components Industries, LLC, 2011
October, 2016 − Rev. 11
1
Publication Order Number:
CM1213A/D
CM1213A, SZCM1213A
BLOCK DIAGRAM
VP
CH1
VN
CM1213A−01SO
VP
CH4
CH1
VP
CH3
CH2
VN
CM1213A−02SR
CM1213A−02SO
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2
CH1 VN CH2
CM1213A−04MR
CM1213A−04S7
CM1213A, SZCM1213A
PACKAGE/PINOUT DIAGRAMS
Table 1. PIN DESCRIPTIONS
1−Channel, 3−Lead SOT23−3 Package (CM1213A−01SO)
Top View
Pin
Name
Type
Description
1
CH1
I/O
2
VP
PWR
Positive Voltage Supply Rail
3
VN
GND
Negative Voltage Supply Rail
CH1 (1)
ESD Channel
231
VP (2)
Name
Type
1
VN
GND
2
CH1
I/O
ESD Channel
3
CH2
I/O
ESD Channel
4
VP
PWR
VN (3)
2
Description
Negative Voltage Supply Rail
Top View
1
CH1 (2)
2
Pin
Name
1
NC
−
2
VN
GND
3
CH1
I/O
ESD Channel
4
CH2
I/O
ESD Channel
5
NC
−
6
VP
PWR
4
VP (4)
3
CH2 (3)
D232
VN (1)
Positive Voltage Supply Rail
2−Channel, SC−74 Package (CM1213A−02SO)
Type
3
3−Lead SOT23−3
2−Channel, 4−Lead SOT143−4 Package (CM1213A−02SR)
Pin
1
4−Lead SOT143−4
Description
No Connect
Negative Voltage Supply Rail
Top View
Positive Voltage Supply Rail
NC (1)
1
VN (2)
2
CH1 (3)
3
Name
Type
1
CH1
I/O
2
VN
GND
3
CH2
I/O
ESD Channel
4
CH3
I/O
ESD Channel
5
VP
PWR
6
CH4
I/O
6
VP (6)
5
NC (5)
4
CH2 (4)
6−Lead SC−74
4−Channel, 6−Lead SC70−6 (CM1213A−04S7)
Pin
233
No Connect
Description
ESD Channel
Negative Voltage Supply Rail
Top View
ESD Channel
1
VN
2
CH2
3
D38
Positive Voltage Supply Rail
CH1
6
CH4
5
VP
4
CH3
6−Lead SC70−6
4−Channel, 10−Lead MSOP−10 Package (CM1213A04MR)
Pin
Name
Type
1
CH1
I/O
2
NC
−
3
VP
PWR
CH2
I/O
NC
−
6
CH3
I/O
7
NC
−
8
VN
GND
9
CH4
I/O
10
NC
−
ESD Channel
No Connect
Top View
Positive Voltage Supply Rail
CH1
NC
VP
CH2
NC
ESD Channel
No Connect
ESD Channel
1
2
3
4
5
10
9
8
7
6
D238
4
5
Description
NC
CH4
VN
NC
CH3
10−Lead MSOP−10
No Connect
Negative Voltage Supply Rail
ESD Channel
No Connect
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3
CM1213A, SZCM1213A
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
6.0
V
Operating Temperature Range
–40 to +85
°C
Storage Temperature Range
–65 to +150
°C
(VN − 0.5) to (VP + 0.5)
V
Operating Supply Voltage (VP − VN)
DC Voltage at any channel input
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Package Power Rating
SOT23−3, SOT143−4, SC−74, and SC70−6 Packages
MSOP−10 Package
Rating
Units
–40 to +85
°C
mW
225
400
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)
Symbol
Parameter
Conditions
VP
Operating Supply Voltage (VP−VN)
IP
Operating Supply Current
(VP−VN) = 3.3 V
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8 mA; TA = 25°C
Channel Leakage Current
Min
Max
Units
3.3
5.5
V
8.0
mA
V
0.80
0.80
0.95
0.95
TA = 25°C; VP = 5 V, VN = 0 V
0.1
1.0
mA
Channel Input Capacitance
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
(Note 2)
0.85
1.2
pF
DCIN
Channel Input Capacitance Matching
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
(Note 2)
0.02
VESD
ESD Protection − Peak Discharge
Voltage at any channel input, in system
Contact discharge per
IEC 61000−4−2 standard
ILEAK
CIN
0.60
0.60
Typ
pF
kV
TA = 25°C (Notes 2 and 3)
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25°C, IPP = 1A, tP = 8/20 mS
(Note 2)
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1A, tP = 8/20 mS
Any I/O pin to Ground
(Note 2)
8
+10
–1.7
0.9
0.5
V
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. All parameters specified at TA = –40°C to +85°C unless otherwise noted.
2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.
3. These measurements performed with no external capacitor on VP (VP floating).
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4
CM1213A, SZCM1213A
PERFORMANCE INFORMATION
Input Channel Capacitance Performance Curves
Figure 1. Typical Variation of CIN vs. VIN
(f = 1 MHz, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN, 255C)
Figure 2. Typical Variation of CIN vs. Temp
(f = 1 MHz, VIN = 30 mV, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN)
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5
CM1213A, SZCM1213A
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (nominal conditions unless specified otherwise, 50 Ohm Environment)
Figure 3. Insertion Loss (S21) vs. Frequency (0 V DC Bias, VP=3.3 V)
Figure 4. Insertion Loss (S21) vs. Frequency (2.5 V DC Bias, VP=3.3 V)
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6
CM1213A, SZCM1213A
APPLICATION INFORMATION
Design Considerations
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic
series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically
a connector) and the ESD protection device. Refer to Application of Positive ESD Pulse between Input Channel and Ground,
which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to the power
supply is represented by L1 and L2. The voltage VCL on the line being protected is:
VCL = Fwd Voltage Drop of D1 + VSUPPLY + L1 x d(IESD) / dt + L2 x d(IESD) / dt
where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage.
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge
per the IEC61000−4−2 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(IESD)/dt can be
approximated by DIESD/Dt, or 30/(1x10−9). So just 10 nH of series inductance (L1 and L2 combined) will lead to a 300 V
increment in VCL!
Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically
increased negative voltage on the line being protected.
The CM1213A has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail inductance
L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when
VP is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 mF ceramic chip
capacitor be connected between VP and the ground plane.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the
ESD device to minimize stray series inductance.
Additional Information
See also ON Semiconductor Application Note “Design Considerations for ESD Protection”, in the Applications section.
L2
VP
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
D1
0.22 mF
ONE
CHANNEL
D2 OF
CM1213
VN
POSITIVE SUPPLY RAIL
VCC
PATH OF ESD CURRENT PULSE IESO
LINE BEING
PROTECTED
L1
CHANNEL
INPUT
25 A
0A
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
SYSTEM OR
CIRCUITRY
BEING
PROTECTED
VCL
GROUND RAIL
CHASSIS GROUND
Figure 5. Application of Positive ESD Pulse between Input Channel and Ground
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7
CM1213A, SZCM1213A
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
CM1213A, SZCM1213A
PACKAGE DIMENSIONS
SOT−143
CASE 318A−06
ISSUE U
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIM­
UM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO­
TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
AND GATE BURRS SHALL NOT EXCEED 0.25 PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH AND PROTRUSION SHALL
NOT EXCEED 0.25 PER SIDE.
5. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H.
6. DATUMS A AND B ARE DETERMINED AT DATUM H.
e
D
A
GAUGE
PLANE
E
DETAIL A
b1
e1
B
3X
b
0.20
TOP VIEW
SIDE VIEW
C A-B D
M
H
c
A1
L
L2
E1
A
SEATING
PLANE
c
0.10 C
C
DETAIL A
SEATING
PLANE
END VIEW
DIM
A
A1
b
b1
c
D
E
E1
e
e1
L
L2
MILLIMETERS
MIN
MAX
0.80
1.12
0.01
0.15
0.30
0.51
0.76
0.94
0.08
0.20
2.80
3.05
2.10
2.64
1.20
1.40
1.92 BSC
0.20 BSC
0.35
0.70
0.25 BSC
RECOMMENDED
SOLDERING FOOTPRINT*
1.92
4X
0.75
2.70
0.20
3X
0.96
0.54
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
CM1213A, SZCM1213A
PACKAGE DIMENSIONS
SC−88 (SC−70 6 Lead), 1.25x2
CASE 419AD
ISSUE A
D
e
e
E1 E
SYMBOL
MIN
A
0.80
MAX
1.10
A1
0.00
0.10
A2
0.80
1.00
b
0.15
0.30
c
0.10
0.18
D
1.80
2.00
2.20
E
1.80
2.10
2.40
E1
1.15
1.25
1.35
0.65 BSC
e
L
TOP VIEW
NOM
0.26
0.36
L1
0.42 REF
L2
0.15 BSC
0.46
θ
0º
8º
θ1
4º
10º
q1
A2 A
q
q1
b
L
L1
A1
SIDE VIEW
c
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
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10
L2
CM1213A, SZCM1213A
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW
STANDARD 318F−05.
D
6
HE
1
5
4
2
3
E
DIM
A
A1
b
c
D
E
e
L
HE
b
e
C
A
0.05 (0.002)
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
−
10°
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
CM1213A, SZCM1213A
PACKAGE DIMENSIONS
MSOP 10, 3x3
CASE 846AE
ISSUE O
SYMBOL
MIN
NOM
A
E
E1
MAX
1.10
A1
0.00
0.05
0.15
A2
0.75
0.85
0.95
b
0.17
0.27
c
0.13
0.23
D
2.90
3.00
3.10
E
4.75
4.90
5.05
E1
2.90
3.00
3.10
e
L
0.50 BSC
0.40
L1
L2
θ
0.60
0.80
0.95 REF
0.25 BSC
0º
8º
DETAIL A
TOP VIEW
D
A
END VIEW
A2
A1
c
e
b
q
SIDE VIEW
L2
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-187.
L
L1
DETAIL A
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CM1213A/D