IRF740 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL D TO-220 G ATE DRAIN SOU RCE Top View 1 2 3 G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit ID 10 A IDM 40 VGS ±20 V VGSM ±40 V PD 125 W 1.0 W/к Derate above 25к Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к TJ, TSTG -55 to 150 к EAS 300 mJ șJC 1.7 к/W șJA 62.5 TL 260 (VDD = 100V, VGS = 10V, IL = 10A, L = 6mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к Page 1 IRF740 ! POWER MOSFET ORDERING INFORMATION Part Number Package .....................IRF740................................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF740 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 400 Typ Max Units V mA Drain-Source Leakage Current (VDS = 400 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR ...............-100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.0A) * RDS(on) ................0.4...............0.55 ȍ Drain-Source On-Voltage (VGS = 10 V) (ID = 5.0 A) VDS(on) 6.0 V 0.25 1.0 2.0 Forward Transconductance (VDS = 50 V, ID = 5.0A) * gFS ..4.0................ Input Capacitance Ciss 1570 Coss 230 pF pF Crss 55 pF td(on) 25 tr 37 ns ns td(off) 75 ns tf 31 ns (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (VDD = 200 V, ID = 10.0 A, VGS = 10 V, RG = 10ȍ) * Qg 46 Qgs 10 nC nC Qgd 23 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 320 V, ID = 10.0 A, VGS = 10 V)* 63 mhos SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 10.0 A, VGS = 0 V, dIS/dt = 100A/µs) VSD .................2.0.................. V ton ** ns trr 250 ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 ! IRF740 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3