Suntac IRF740 Power mosfet Datasheet

IRF740
!
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
‹ Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
‹ Avalanche Energy Specified
without degrading performance over time. In addition, this
‹ Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
‹ Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
‹ IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
D
TO-220
G ATE
DRAIN
SOU RCE
Top View
1
2
3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
ID
10
A
IDM
40
VGS
±20
V
VGSM
±40
V
PD
125
W
1.0
W/к
Derate above 25к
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
TJ, TSTG
-55 to 150
к
EAS
300
mJ
șJC
1.7
к/W
șJA
62.5
TL
260
(VDD = 100V, VGS = 10V, IL = 10A, L = 6mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
к
Page 1
IRF740
!
POWER MOSFET
ORDERING INFORMATION
Part Number
Package
.....................IRF740................................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
CIRF740
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Symbol
Min
V(BR)DSS
400
Typ
Max
Units
V
mA
Drain-Source Leakage Current
(VDS = 400 V, VGS = 0 V)
(VDS = 400 V, VGS = 0 V, TJ = 125к)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
...............-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.0A) *
RDS(on)
................0.4...............0.55
ȍ
Drain-Source On-Voltage (VGS = 10 V)
(ID = 5.0 A)
VDS(on)
6.0
V
0.25
1.0
2.0
Forward Transconductance (VDS = 50 V, ID = 5.0A) *
gFS
..4.0................
Input Capacitance
Ciss
1570
Coss
230
pF
pF
Crss
55
pF
td(on)
25
tr
37
ns
ns
td(off)
75
ns
tf
31
ns
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(VDD = 200 V, ID = 10.0 A,
VGS = 10 V,
RG = 10ȍ) *
Qg
46
Qgs
10
nC
nC
Qgd
23
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
Gate-Source Charge
Gate-Drain Charge
(VDS = 320 V, ID = 10.0 A,
VGS = 10 V)*
63
mhos
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 10.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
VSD
.................2.0..................
V
ton
**
ns
trr
250
ns
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
Page 2
!
IRF740
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Page 3
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