CPH5902 Ordering number : ENN6962A CPH5902 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package. Drain and emitter are shared. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS 15 V --15 V IG ID 10 mA Drain Current 50 mA Allowable Power Dissipation PD 350 mW Collector-to-Base Voltage VCBO 55 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Gate-to-Drain Voltage Gate Current [TR] Collector Current 150 mA 300 mA Base Current IC ICP IB 30 mA Collector Dissipation PC 350 mW mW Collector Current (Pulse) [Common Ratings] Total Dissipation PT 500 Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IMNo.6962-1/6 22004 TS IM TA-101143 / 52501 TS IM TA-3247 CPH5902 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit [FET] Gate-to-Drain Breakdown Voltage` V(BR)GDS Gate Cutoff Current IG=--10µA, VDS=0 VGS=--10V, VDS=0 VDS=5V, ID=100µA --15 V Cutoff Voltage IGSS VGS(off) Drain Current IDSS VDS=5V, VGS=0 Forward Transfer Admittance yfs Ciss VDS=5V, VGS=0, f=1kHz 38 mS Input Capacitance VDS=5V, VGS=0, f=1MHz 10.0 pF Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz 2.9 pF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB Noise Figure NF --1.0 --0.4 --0.7 10.0* 24 nA --1.5 V 32.0* mA [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product fT VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA 135 0.1 µA 0.1 µA 400 VCE=6V, IC=10mA 200 Cob VCB=6V, f=1MHz 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) 0.08 0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA IC=50mA, IB=5mA 0.8 1.0 V Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=10µA, IE=0 IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 See specified Test Circuit Turn-ON Time ton tstg Storage Time Fall Time tf MHz pF 55 V 50 V 6 V 0.15 µs See specified Test Circuit 0.75 µs See specified Test Circuit 0.20 µs Marking : RB * : The CPH5902 is classified by IDSS as follows : (unit : mA) Rank G H IDSS 10.0 to 20.0 16.0 to 32.0 The specifications shown above are for each individual FET or transistor. Package Dimensions Electrical Connection unit : mmm 2196 2.9 4 0.15 3 3 2.8 0.05 1 2 1 : Collector 2 : Gate 3 : Source 4 : Emitter / Drain 5 : Base Top view 0.6 1.6 0.6 5 4 0.2 5 2 0.2 0.4 0.4 0.9 0.95 0.7 1 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CPH5 No.6962-2/6 CPH5902 Switching Time Test Circuit IB1 PC=20µs D.C.≤1% OUTPUT IB2 INPUT 1kΩ RL 2kΩ VR 50Ω + 470µF + 220µF VBE= --5V VCC=20V 10IB1= --10IB2=IC=10mA ID -- VDS 20 [FET] ID -- VDS 20 [FET] VGS=0 16 VGS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V --0.4V 4 0 0.8 8 --0.3V --0.4V 0 1.2 1.6 0 2.0 2 4 6 8 Drain-to-Source Voltage, VDS -- V ITR10364 ID -- VGS 10 ITR10365 ID -- VGS [FET] 16 [FET] VDS=5V IDSS=15mA VDS=5V 20 --0.5V --0.6V --0.7V Drain-to-Source Voltage, VDS -- V 22 --0.2V 4 --0.6V 0.4 12 --0.5V --0.7V 0 --0.1V 14 A 6 4 m 10 2 25 2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 100 A m =15 I DSS 3 A 30m 2 10 7 5 3 --0.8 --0.6 --0.4 --0.2 yfs -- IDSS [FET] VDS=5V f=1kHz 5 --1.0 Gate-to-Source Voltage, VGS -- V IT03287 yfs -- ID 7 0 --1.2 0 Forward Transfer Admittance, yfs -- mS 0 --1.4 Forward Transfer Admittance, yfs -- mS C °C 4 15 6 mA S =2 0m 8 8 75° A 10 10 °C 12 --2 5 14 12 Ta = Drain Current, ID -- mA 16 ID S Drain Current, ID -- mA 18 0 ITR10367 [FET] VDS=5V VGS=0 f=1kHz 7 5 3 2 10 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- mA 2 3 5 IT03288 7 10 3 5 Drain Current, IDSS -- mA 2 IT03289 No.6962-3/6 CPH5902 VGS(off) -- IDSS 2 3 --1.0 7 5 3 2 --0.1 2 3 5 Drain Current, IDSS -- mA IT03290 10 Crss -- VDS 7 5 3 2 2 1.0 3 5 7 2 10 [FET] 7 [FET] VDS=5V ID=1mA Rg=1kΩ 8 5 3 2 1.0 3 ITR10371 NF -- f 10 VGS=0 f=1MHz 6 4 2 7 2 1.0 3 5 7 2 10 0 0.01 Drain-to-Source Voltage, VDS -- V NF -- Rg 10 3 [FET] VDS=5V ID=1mA f=1kHz 8 6 4 2 2 3 5 7 1.0 Signal Source Resistance, Rg -- kΩ 5 71000 ITR10374 IC -- VCE [TR] µ 450 5 7 10 A 2 3 A 400µ 50 0µ A 50 2 3 5 7 100 20 100µA 10 50µA 0 IB=0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 2 3 5 7100 ITR10373 PD -- Ta [FET] 20 40 60 80 100 120 140 160 IT07500 IC -- VCE [TR] 50µA 45µA 40µA 35µA 8 30µA 6 25µA 20µA 4 15µA 10µA 5µA IB=0 0 ITR10376 2 3 100 2 1.0 5 7 10 200 10 150µA 5 7 1.0 300 12 200µA Frequency, f -- kHz Ambient Temperature, Ta -- °C 350µA 30 2 3 350 0 0 2 3 300µA 250µA 40 5 7 0.1 400 Collector Current, IC -- mA 0 0.1 2 3 ITR10372 Allowable Power Dissipation, PD -- mW 7 Noise Figure, NF -- dB 10 Drain-to-Source Voltage, VDS -- V 5 Collector Current, IC -- mA VGS=0 f=1MHz 1.0 7 Noise Figure, NF -- dB Reverse Transfer Capacitance, Crss -- pF 10 [FET] 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V VDS=5V ID=100µA 7 Ciss -- VDS [FET] 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR10377 No.6962-4/6 CPH5902 IC -- VBE 160 [TR] hFE -- IC 2 [TR] VCE=6V VCE=6V 140 DC Current Gain, hFE 120 100 80 60 Ta=75 °C 25°C --25°C Collector Current, IC -- mA 1000 40 20 7 5 0.2 0.4 0.6 25°C --25°C 5 0.8 1.0 1.2 3 0.1 1.4 2 3 5 f T -- IC 1.0 2 3 5 2 10 3 5 100 2 3 ITR10379 Collector Current, IC -- mA ITR10378 [TR] cib -- VEB 5 [TR] VCE=6V 5 f=1MHz 3 Input Capacitance, cib -- pF Gain-Bandwidth Product, fT -- MHz 2 7 Base-to-Emitter Voltage, VBE -- V 7 Ta=75°C 100 0 0 3 3 2 100 7 5 7 5 3 2 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 2 100 ITR10380 Cob -- VCB 5 5 [TR] 10 7 5 3 2 2 1.0 1.0 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10382 1.0 7 5 3 2 0.1 5°C Ta=7 °C --25 7 5 [TR] 3 5 7 2 10 3 5 7 2 100 ITR10383 PC -- Ta 400 7 [TR] Collector Dissipation, PC -- mW 350 5 3 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 1.0 2 °C 25 Collector Current, IC -- mA IC / IB=10 7 10 ITR10381 [TR] 2 2 1.0 5 7 5 IC / IB=10 3 7 5 3 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 Emitter-to-Base Voltage, VEB -- V f=1MHz 3 Output Capacitance, Cob -- pF 10 3 2 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 300 200 100 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10384 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07501 No.6962-5/6 CPH5902 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.6962-6/6