Freescale ATC100B3R0CT500XT Rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Device has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
• Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @
±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB--T (8k OFDM)
125 Avg.
860
19.3
30.0
--60.5
--12
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
470--860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
• Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pulsed Width = 100 μsec, Duty Cycle = 10%
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulsed
600 Peak
470
19.3
47.1
650
20.0
53.1
860
18.8
48.9
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP8600HR6
Features
• Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated Pout)
• Exceptional Efficiency for Class AB Analog or Digital Television Operation
• Full Performance across Complete UHF TV Spectrum, 470--860 MHz
• Capable of 600 Watt CW Output Power with Adequate Thermal Management
• Integrated Input Matching
• Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V
− Improves Class C Performance, e.g. in a Doherty Peaking Stage
− Enables Fast, Easy and Complete Shutdown of the Amplifier
• Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
• Excellent Thermal Characteristics
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP8600HSR6
PARTS ARE PUSH--PULL
Gate 1 3
1 Drain 1
Gate 2 4
2 Drain 2
Table 1. Maximum Ratings
Rating
Symbol
Drain--Source Voltage
VDSS
Gate--Source Voltage
Storage Temperature Range
Value
Unit
--0.5, +130
Vdc
VGS
--6.0, +10
Vdc
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1052
5.26
W
W/°C
Operating Junction Temperature (1,2)
TJ
225
°C
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
MRFE6VP8600HR6
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz
RθJC
0.19
(3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
μAdc
130
140
—
Vdc
(4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
20
μAdc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 980 μAdc)
VGS(th)
1.5
2.07
2.5
Vdc
Gate Quiescent Voltage (5)
(VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.1
2.65
3.1
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.24
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 20 Adc)
gfs
—
15.6
—
S
Reverse Transfer Capacitance (6)
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.49
—
pF
Output Capacitance (6)
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
79.9
—
pF
Input Capacitance (7)
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
264
—
pF
On Characteristics
Dynamic Characteristics (4)
Functional Tests (5) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
Gps
18.0
19.3
21.0
dB
Drain Efficiency
ηD
29.0
30.0
—
%
ACPR
—
--60.5
--58.5
dBc
IRL
—
--12
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact
resistance of this TIM.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching.
(continued)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz,
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
Pout = 125 W Avg.
Load Mismatch
VSWR >65:1 at all Phase Angles, 3 dB Overdrive from
Rated Pout (240 W Avg.)
PAR
Ψ
—
7.8
—
dB
No Degradation in Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
3
R1
C1
C2
C13
C12
L1
C11
COAX3
COAX1
C19
C23*
C7
C5
C14* C16*
L2
C3 C4
C8*
CUT OUT AREA
C6
C15*
COAX2
C18*
C21 C20
C17*
C22
COAX4
C24
MRFE6VP8600H
Rev. 1
C9
C10
L3
C25
C26
R2
*C8, C14, C15, C16, C17, C18 and C23 are mounted vertically.
Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB--T (8k OFDM)
Table 5. MRFE6VP8600HR6(HSR6) Test Circuit Component Designations and Values — 860 MHz, DVB--T (8k OFDM)
Part
Description
Part Number
Manufacturer
C1, C9
10 μF, 50 V, Chip Capacitors
GRM55DR61H106KA88L
Murata
C2, C10
2.2 μF, 50 V, Chip Capacitors
C3225X7R1H225K
TDK
C3, C4, C20, C21, C23
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C5, C6
24 pF Chip Capacitors
ATC100B240JT500XT
ATC
C7
0.8--8.0 pF Variable Capacitor
27291SL
Johanson Components
C8
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C11, C24
2.2 μF, 100 V, Chip Capacitors
C3225X7R2A225KT
TDK
C12, C25
4.7 μF, 100 V, Chip Capacitors
GRM55ER72A475KA01B
Murata
C13, C26
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C14
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C15
3.0 pF Chip Capacitor
ATC100B3R0CT500XT
ATC
C16
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C17
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C18
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C19, C22
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
Coax1, 2, 3, 4
25 Ω SemiRigid Coax, Length 2.0”
UT--141C--25
Micro--Coax
L1, L3
5.0 nH, 2 Turn Inductors
A02TKLC
Coilcraft
L2
2.5 nH, 1 Turn Inductor
A01TKLC
Coilcraft
R1, R2
10 Ω, 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
PCB
0.030″, εr = 3.5
RO4350B
Rogers
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
4
RF Device Data
Freescale Semiconductor
COAX1
Z19
L1
VBIAS
R1
C2
C1
Z17
RF
INPUT Z1
Z5
Z3
C3
Z2
Z7
Z9
Z11 Z13
Z15
Z12 Z14
Z16
C5
L2
Z6
C4
Z8
C7
Z10
C8
C6
Z4
Z18
R2
COAX2
C10
C9
+
Z46
Z20
L3
VBIAS
C12
VSUPPLY
C13
C11
COAX3
Z44
Z21
Z23 Z25
Z27
Z29
Z31
Z33
Z35 Z37
C19
Z39
C20
DUT
C14
C15
C16
C17
Z41
C18
C21
Z22
Z24 Z26
Z28
Z30
Z32
Z34
Z36 Z38
RF
OUTPUT
Z42 Z43
C23
Z40
C22
Z45
COAX4
C24
Z47
+
C25
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
0.204″ x 0.062″ Microstrip
0.245″ x 0.080″ Microstrip
0.445″ x 0.060″ Microstrip
0.019″ x 0.100″ Microstrip
0.415″ x 0.400″ Microstrip
0.083″ x 0.400″ Microstrip
0.022″ x 0.400″ Microstrip
0.208″ x 0.850″ Microstrip
0.242″ x 0.960″ Microstrip
Z17, Z18
Z19*, Z20*
Z21, Z22
Z23, Z24
Z25, Z26
Z27, Z28
Z29, Z30
Z31, Z32
Z33, Z34
VSUPPLY
C26
0.780″ x 0.080″ Microstrip
0.354″ x 0.080″ Microstrip
0.164″ x 0.520″ Microstrip
0.186″ x 0.520″ Microstrip
0.088″ x 0.420″ Microstrip
0.072″ x 0.420″ Microstrip
0.072″ x 0.420″ Microstrip
0.259″ x 0.420″ Microstrip
0.075″ x 0.420″ Microstrip
Z35, Z36
Z37, Z38
Z39, Z40
Z41
Z42
Z43
Z44*, Z45*
Z46, Z47
0.052″ x 0.420″ Microstrip
0.211″ x 0.100″ Microstrip
0.389″ x 0.060″ Microstrip
0.070″ x 0.080″ Microstrip
0.018″ x 0.080″ Microstrip
0.204″ x 0.062″ Microstrip
0.850″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
* Line length includes microstrip bends
Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB--T (8k OFDM)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
5
10
1.06
1.05
1.04 1400 mA
1.03
VDD = 50 Vdc
IDS(Q) = 100 mA
1.02 1900 mA
1.01
2400 mA
1
0.99
0.98
0.97
0.96
0.95
0.94
40 Vdc
8
30 Vdc
20 Vdc
10 Vdc
7
6
5
4
3
2
1
--50
--25
0
25
50
75
0
2.1
100
2.2
2.4 2.5
2.3
2.6
2.7
2.8
2.9
3
3.1 3.2
3.3
TC, CASE TEMPERATURE (°C)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 4. Normalized VGS Quiescent versus
Case Temperature
Note: Measured with both sides of the transistor tied together.
1000
Figure 5. Drain Current versus Gate--Source Voltage
64
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Coss
100
P3dB = 59.0 dBm (794 W)
P2dB = 58.8 dBm (759 W)
62
Pout, OUTPUT POWER (dBm)
10
Crss
1
60
Ideal
P1dB = 58.4 dBm (692 W)
Actual
58
56
54
VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
52
50
0
10
20
30
40
32
50
33
34
35
36
37
38
39
40
41
42
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (dBm)
Note: Each side of device measured separately.
Figure 7. Pulsed CW Output Power versus
Input Power
Figure 6. Capacitance versus Drain--Source Voltage
60
22
VDD = 50 Vdc, IDQ = 1400 mA
f = 860 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
21
Gps, POWER GAIN (dB)
43
20
50
Gps
40
30
19
ηD
18
20
10
17
16
10
100
ηD, DRAIN EFFICIENCY (%)
C, CAPACITANCE (pF)
VDD = 50 Vdc
9
IDD, DRAIN CURRENT (AMPS)
NORMALIZED VGS(Q)
TYPICAL CHARACTERISTICS — 860 MHz
0
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
--20
7.61 MHz
--30
10
--50
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
0.01
4 kHz BW
ACPR Measured at 4 MHz Offset
from Center Frequency
--70
--80
--90
0.001
0.0001
4 kHz BW
--60
0.1
(dB)
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
--100
--110
0
2
4
6
8
10
12
--5
--4
--3
--2
--1
0
1
2
3
4
f, FREQUENCY (MHz)
Figure 9. Source Peak--to--Average DVB--T (8k OFDM)
Figure 10. DVB--T (8k OFDM) Spectrum
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
PEAK--TO--AVERAGE (dB)
40
ACPR
VDD = 50 Vdc, IDQ = 1400 mA
f = 860 MHz, DVB--T (8k OFDM)
35
64 QAM Data Carrier Modulation
5 Symbols
30
--58
ηD
--60
--62
25
Gps
20
--64
--66
15
10
20
--56
40
60
80
100
120
140
160
180
--68
200
5
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
PROBABILITY (%)
--40
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Single--Carrier DVB--T (8k OFDM) Drain
Efficiency, Power Gain and ACPR versus Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
109
VDD = 50 Vdc
Pout = 125 W CW
MTTF (HOURS)
108
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Note: The MTTF calculation for this graph is based on the thermal
resistance of the part using thermal grease TIM mounting.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature -- CW
VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
860
1.14 + j0.88
2.61 + j1.84
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
8
RF Device Data
Freescale Semiconductor
470--860 MHz REFERENCE CIRCUIT
VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF, TC = 50°C.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output
PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
125 Avg.
470
19.0
27.2
8.2
--31.1
650
20.3
30.6
7.6
--30.3
860
19.0
27.9
7.7
--30.4
C1
C2
C17
C16
R1
COAX1
C3
COAX3
C20
C22*
C6
C12*
C10
C8
C7
C23*
C33*
C28*
C27*
C25*
C34 C32
C26*
C24*
C9*
C31
C21*
C6
C4 C5
C19
C18
L1
C29* C30*
C11*
C35
C15
COAX2
Q1
C36
COAX4
MRFE6VP8600H
Rev. 1
C13
C14
L2
C39
R2
C37
C40
C38
*C9, C11, C12, C21, C22, C23, C24, C25, C26, C27, C28, C29, C30 and C33 are mounted vertically.
Figure 14. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Layout — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
9
470--860 MHz REFERENCE CIRCUIT
Table 6. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Designations and Values — 470--860 MHz
Part
Description
Part Number
Manufacturer
C1, C13
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C2, C14
2.2 μF, 50 V Chip Capacitors
C3225X7R1H225K
TDK
C3, C15
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C4, C5
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C6, C7
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C8, C10
0.8--8.0 pF Variable Capacitors
27291SL
Johanson Components
C9, C28
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C11, C12
6.8 pF Chip Capacitors
ATC800B6R8BT500XT
ATC
C16, C37
39,000 pF Chip Capacitors
ATC200B393KT50XT
ATC
C17, C38
2.2 μF, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C18, C39
4.7 μF, 100 V Chip Capacitors
GRM55ER72A475KA01B
Murata
C19, C40
220 μF, 100 V Electrolytic Capacitors
EEV--FK2A221M
Panasonic--ECG
C20, C36
56 pF Chip Capacitors
ATC100B560CT500XT
ATC
C21, C25, C29
7.5 pF Chip Capacitors
ATC800B7R5CT500XT
ATC
C22, C30
8.2 pF Chip Capacitors
ATC800B8R2CT500XT
ATC
C23
13 pF Chip Capacitor
ATC800B130JT500XT
ATC
C24
9.1 pF Chip Capacitor
ATC800B9R1CT500XT
ATC
C26
3.3 pF Chip Capacitor
ATC800B3R3CT500XT
ATC
C27
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C31, C35
1,000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C32, C33, C34
120 pF Chip Capacitors
ATC100B121JT500XT
ATC
L1, L2
5.0 nH, 2 Turn Inductors
A02TKLC
Coilcraft
R1, R2
10 Ω, 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
Coax1, 2, 3, 4
25 Ω SemiRigid Coax, Length 2.0″
UT--141C--25
Micro--Coax
Q1
RF Power LDMOS Transistor
MRFE6VP8600HR6
Freescale
PCB
0.030″, εr = 3.5
RO4350B
Rogers
Table 7. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Microstrips — 470--860 MHz
Microstrip
Description
Microstrip
Description
Z1
0.204″ x 0.062″ Microstrip
Z33, Z34
0.038″ x 0.520″ Microstrip
Z2
0.245″ x 0.080″ Microstrip
Z35, Z36
0.170″ x 0.420″ Microstrip
Z3, Z4
0.445″ x 0.060″ Microstrip
Z37, Z38
0.269″ x 0.420″ Microstrip
Z5, Z6
0.019″ x 0.100″ Microstrip
Z39, Z40
0.069″ x 0.420″ Microstrip
Z7, Z8
0.305″ x 0.400″ Microstrip
Z41, Z42
0.075″ x 0.420″ Microstrip
Z9, Z10
0.083″ x 0.400″ Microstrip
Z43, Z44
0.038″ x 0.420″ Microstrip
Z11, Z12
0.095″ x 0.400″ Microstrip
Z45, Z46
0.038″ x 0.100″ Microstrip
Z13, Z14
0.055″ x 0.850″ Microstrip
Z47, Z48
0.075″ x 0.100″ Microstrip
Z15, Z16
0.083″ x 0.850″ Microstrip
Z49, Z50
0.169″ x 0.100″ Microstrip
Z17, Z18
0.071″ x 0.850″ Microstrip
Z51, Z52
0.389″ x 0.060″ Microstrip
Z19, Z20
0.187″ x 0.960″ Microstrip
Z53
0.070″ x 0.080″ Microstrip
Z21, Z22
0.055″ x 0.960″ Microstrip
Z54
0.018″ x 0.080″ Microstrip
Z23, Z24
0.780″ x 0.080″ Microstrip
Z55
0.204″ x 0.062″ Microstrip
Z25*, Z26*
0.354″ x 0.080″ Microstrip
Z56, Z57
0.278″ x 0.080″ Microstrip
Z27, Z28
0.164″ x 0.520″ Microstrip
Z58*, Z59*
0.886″ x 0.080″ Microstrip
Z29, Z30
0.074″ x 0.520″ Microstrip
Z31, Z32
0.075″ x 0.520″ Microstrip
* Line length includes microstrip bends
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
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RF Device Data
Freescale Semiconductor
470--860 MHz REFERENCE CIRCUIT
COAX1
Z25
L1
VBIAS
C1
C2
R1
C3
Z23
RF
INPUT Z1
Z5
Z3
C4
Z2
Z7
Z9
Z11 Z13
Z15
Z17
Z19
Z21
Z8
C8
Z10
C9
Z12 Z14
C10
Z16
C11
Z18
C12
Z20
Z22
C6
Z6
C5
C7
Z4
Z24
C15
R2
COAX2
L2
VBIAS
C13
Z58
C16
C17
C18
Z56
Z29
Z31
Z33 Z35
Z37
C14
+ VSUPPLY
C19
C20
Z27
Z26
Z39
C21
C22
Z41
Z43 Z45
COAX3
Z47
Z49
C31
Z51
C32
Q1
C23
C24
C25
C26
C27
C28
C34
Z28
Z30
Z32
Z34 Z36
Z38
Z40
Z42
Z44 Z46
Z48
Z50
RF
Z54 Z55 OUTPUT
Z53
C33
Z52
C35
Z57
C29
C30
COAX4
C36
Z59
+ VSUPPLY
C37
C38
C39
C40
Figure 15. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Schematic — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
11
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
21
60
19
50
40
Gps
665 MHz
18
30
860 MHz
665 MHz
860 MHz
470 MHz
17
20
470 MHz
16
10
ηD
15
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
VDD = 50 Vdc, IDQ = 1400 mA
Pulse Width = 100 μsec
20
Duty Cycle = 10%
0
10
100
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 16. Broadband Pulsed Power Gain and Drain
Efficiency versus Output Power — 470--860 MHz
21
66
Gps
58
Gps, POWER GAIN (dB)
19
ηD
18
54
17
50
16
46
IRL
42
15
14
13
400
VDD = 50 Vdc, Pout = 600 W Peak, IDQ = 1400 mA
Pulse Width = 100 μsec, Duty Cycle = 10%
450
500
550
600
650
700
750
800
850
--5
--7
--6
38
--11
34
900
--13
IRL, INPUT RETURN LOSS (dB)
62
ηD, DRAIN EFFICIENCY (%)
20
f, FREQUENCY (MHz)
35
VDD = 50 Vdc, IDQ = 1400 mA
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
30
665 MHz
860 MHz
470 MHz
ηD
25
--10
--15
Gps
20
665 MHz
860 MHz
ηD, DRAIN
EFFICIENCY (%)
--5
15
860 MHz
5
40
--25
--30
665 MHz
0
470 MHz
IMD(1)
470 MHz
10
--20
80
120
160
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
Gps, POWER GAIN (dB)
Figure 17. Broadband Pulsed Power Gain, Drain
Efficiency and IRL versus Frequency
--35
200
Pout, OUTPUT POWER (WATTS) AVG.
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
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RF Device Data
Freescale Semiconductor
40
35
665 MHz
ηD
0
860 MHz
470 MHz
30
--5
--10
25
Gps
20
ηD, DRAIN
EFFICIENCY (%)
5
VDD = 50 Vdc, IDQ = 700 mA
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
665 MHz
860 MHz
470 MHz
15
665 MHz
470 MHz
10
--15
IMD(1)
--
860 MHz
5
0
40
80
120
--20
--25
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
--30
200
160
Pout, OUTPUT POWER (WATTS) AVG.
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 19. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
22
0
--1
--2
TC = 35°C
19
18
Gps
--3
--4
75°C
50°C --5
--6
--7
17
IRL
16
15
14
13
12
11
10
450
VDD = 50 Vdc, Pout = 125 W Avg.
IDQ = 1400 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
500
550
600
650
700
750
75°C
800
--8
--9
50°C --10
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
21
20
--11
35°C --12
850 900
f, FREQUENCY (MHz)
Figure 20. Broadband Power Gain and IRL versus Frequency
--15
VDD = 50 Vdc, Pout = 125 W Avg., IDQ = 1400 mA
DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols
35
--17
--19
ηD, DRAIN EFFICIENCY (%)
33
31
ηD
--21
TC = 35°C
29
--23
75°C
27
--25
25
50°C --27
23
75°C
IMD(1)
21
--29
--31
35°C
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
37
50°C --33
19
17
450
500
550
600
650
700
750
800
850
--35
900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
13
470--860 MHz REFERENCE CIRCUIT
Zo = 10 Ω
f = 860 MHz
f = 470 MHz
Zload
f = 860 MHz
Zsource
f = 470 MHz
VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
470
1.96 -- j3.13
5.30 + j1.92
500
1.91 -- j2.46
4.65 + j1.95
530
1.88 -- j1.86
4.50 + j2.35
560
1.91 -- j1.37
4.71 + j2.66
590
1.93 -- j0.94
5.40 + j2.75
620
1.99 -- j0.49
5.93 + j2.29
650
2.11 -- j0.14
6.03 + j1.81
680
2.17 + j0.02
6.04 + j1.45
710
2.14 + j0.26
5.58 + j0.95
740
2.11 + j0.32
5.37 + j0.80
770
1.92 + j0.56
4.80 + j0.56
800
1.65 + j0.91
4.78 + j0.55
830
1.50 + j1.07
4.59 + j0.45
860
0.95 + j1.72
3.93 + j0.11
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 22. Broadband Series Equivalent Source and Load Impedance — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
15
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
16
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
17
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
18
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents to aid your design process.
Application Notes
• AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2011
• Initial Release of Data Sheet
1
Sept. 2011
• Added Fig. 19, DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power -470--860 MHz @ 700 mA to indicate efficiency gains with appropriate precorrection systems, p. 13
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
19
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MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
20
RF Device Data
Freescale Semiconductor
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