SUNMATE EGP10B 1.0a axial leaded high efficiency rectifier Datasheet

EGP10A-EGP10G
1.0A Axial Leaded High Efficiency Rectifier
Features
·
·
·
·
·
·
Low cost
Diffused junction
Low leakage
Low forward voltage
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
· The plastic material carries U/L recognition 94V-0
B
A
A
C
D
Mechanical Data
DO-41
· Case:JEDEC DO--41,molded plastic
· Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
· Polarity: Color band denotes cathode
· Weight: 0.012 ounces,0.34 grams
· Mounting position: Any
Dim
Min
A
25.40
Max
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length
@TA=75
VRRM
VRMS
VDC
EGP
10A
EGP
10B
EGP
10C
EGP
10D
EGP
10F
EGP
10G
UNITS
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
V
V
V
IF(AV)
1.0
A
IFSM
30.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
Maximum reverse recovery time (Note1)
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
0.95
VF
1.25
5.0
100.0
50
IR
trr
CJ
RθJA
TJ
TSTG
22
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC.
3.Thermal resistance f rom junction to ambient.
1 of 2
A
15
50
- 55 ---- + 150
- 55 ---- + 150
V
ns
pF
/W
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
t rr
10
N 1.
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
(+)
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-0.25A
(-)
-1.0A
1cm
SET TIMEBASEFOR 20/30 ns/cm
NOTES:1.RISETIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50Ω.
FIG.4--TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
100
10
T J =25
Pulse Width=300 µ S
1.0
50\100\150\200V
300\400V
0.1
0.04
0.01
0
0.2
0.4
0.6 0.8 1
1.2 1.4
1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
15
10
EGP10A-EGP10D
EGP10F&EGP10G
0.1
1
4
10
0.375"(9.5mm)LEAD LENGTH
0
0
25
50
75
100 125
150
175
100
REVERSE VOLTAGE,VOLTS
30
T J = 1 25
8 .3 m s S in g le H a lf
S in e-W ave
25
AMPERES
20
AVERAGE FORWARD CURRENT
JUNCTION CAPACITANCE,pF
TJ =25
25
0
0.5
FIG.6--FORWARD DERATING CURVE
35
5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
30
1.0
20
E G P 10 A -E G P 10 G
15
10
5
0
1
10
AMBIENT TEMPERATURE,
2of2
100
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