NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04M1618L1A
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx16 bit
Overview
Features
The N04M1618L1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device is a 4
megabit memory organized as 262,144 words by
16 bits. The device is designed and fabricated
using NanoAmp’s advanced CMOS technology
with reliability inhancements for medical users. The
base design is the same as NanoAmp’s
N04M1618L2A, which has further reliability
processing for life-support (Class 3) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. Byte
controls (UB and LB) allow the upper and lower
bytes to be accessed independently and can also
be used to deselect the device. This device is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package
• Dual Power Supply for lowest power
1.4 to 2.3 Volts - VCC
1.4 to 3.6 Volts - VCCQ
• Very low standby current
400nA at 2.0V and 37 deg C Maximum
• Very low operating current
0.7mA at 1.8V and 1µs (Typical)
• Low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Automatic power down to standby mode
• Special Processing to reduce Soft Error Rate
(SER)
• Space saving BGA package available
Product Family
Part Number
Package Type
N04M1618L1AB
48 - BGA
N04M1618L1AT
44 - TSOP II
Operating
Temperature
-40oC to +85oC
Power
Supply
(Vcc)/(VccQ)
Speed
1.4V - 2.3V 85ns @ 1.7V
1.4V - 3.6V 150ns @ 1.4V
Standby
Operating
Current (ISB), Current (Icc),
Max
Max
10 µA
3 mA @ 1MHz
N04M1618L1AD Known Good Die
Pin Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
N04M1618L2AT
TSOP
A4
A3
A2
A1
A0
CE1#
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O15
I/O14
I/O13
I/O12
WE#
A16
A15
A14
A13
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
I/O4
I/O5
I/O6
I/O7
VSS
VCCQ
I/O11
I/O10
I/O9
I/O8
CE2
A8
A9
A10
A11
A17
Pin Descriptions
A
1
2
3
4
5
6
LB#
OE#
A0
A1
A2
CE2
A3
A4
CE1#
I/O0
Pin Name
Pin Function
A0-A17
Address Inputs
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
B
I/O8
UB#
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
A17
A7
I/O3
VCCQ
E
VCC
I/O12
NC
A16
I/O4
VSS
F
I/O14 I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE#
I/O7
VCC
Power
H
NC
A8
A9
A10
A11
NC
VCCQ
Input/Output Power
48 Pin BGA (top)
6 x 8 mm
Data Inputs/Outputs
VSS
Ground
NC
Not Connected
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N04M1618L1A
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A17
Address
Decode
Logic
256K x 16
Input/
Output
Mux
and
Buffers
Memory
Array
I/O0 - I/O7
I/O8 - I/O15
CE1
WE
OE
UB
LB
Control
Logic
Functional Description
CE1
CE2
WE
OE
I/O0 - I/O7
MODE
POWER
H
X
X
X
High Z
Standby1
Standby
Standby
X
L
X
X
High Z
Standby1
Data In
Write2
Active
L
H
L
X2
L
H
H
L
Data Out
Read
Active
L
H
H
H
High Z
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
CIN
I/O Capacitance
CI/O
Min
Max
Unit
VIN = 0V, f = 1 MHz, TA = 25oC
8
pF
VIN = 0V, f = 1 MHz, TA = 25oC
8
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N04M1618L1A
NanoAmp Solutions, Inc.
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
o
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
10sec(Lead only)
oC
240oC,
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Min.
Typ1
Max
Unit
1.4
1.8
2.3
V
VCCQ > or = VCC
1.4
1.8
3.6
V
Chip Disabled3
1.2
Item
Symbol
Core Supply Voltage
VCC
I/O Supply Voltage
VCCQ
Data Retention Voltage
VDR
Input High Voltage
VIH
VCCQ-0.6
VCCQ+0.3
V
Input Low Voltage
VIL
–0.3
0.6
V
Output High Voltage
VOH
IOH = 0.2mA
Output Low Voltage
VOL
IOL = -0.2mA
0.2
V
Input Leakage Current
ILI
VIN = 0 to VCC
0.1
µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
0.1
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
1.5
2.5
mA
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
ICC2
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
10.0
13.0
mA
Page Mode Operating Supply Current
@ 85 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
ICC3
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
3.5
mA
Read/Write Quiescent Operating Supply Current3
ICC4
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
0.2
µA
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 2.3 V
0.2
20.0
µA
0.1
1.0
µA
Standby
Current3
Data Retention Current3
IDR
Test Conditions
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
V
VCCQ–0.2
V
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N04M1618L1A
NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A17)
Word Address (A0 - A3)
Open page
Word 1
Word 2
...
Word 16
CE1
CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N04M1618L1A
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
-40 to +85 oC
Timing VCCQ > or = VCC
Item
Symbol
Read Cycle Time
tRC
VCC = 1.4 - 2.3 V
Min.
Max.
150
VCC = 1.7 - 2.3 V
Min.
Max.
Units
85
ns
Address Access Time
tAA
150
85
ns
Chip Enable to Valid Output
tCO
150
85
ns
Output Enable to Valid Output
tOE
50
40
ns
Chip Enable to Low-Z output
tLZ
20
10
ns
Output Enable to Low-Z Output
tOLZ
20
5
ns
Chip Disable to High-Z Output
tHZ
0
30
0
15
ns
Output Disable to High-Z Output
tOHZ
0
30
0
15
ns
Output Hold from Address Change
tOH
20
10
ns
Write Cycle Time
tWC
150
85
ns
Chip Enable to End of Write
tCW
75
50
ns
Address Valid to End of Write
tAW
75
50
ns
Write Pulse Width
tWP
50
40
ns
Address Setup Time
tAS
0
0
ns
Write Recovery Time
tWR
0
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
50
40
ns
Data Hold from Write Time
tDH
0
0
ns
End Write to Low-Z Output
tOW
10
5
ns
30
15
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
ns
5
N04M1618L1A
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA
tHZ(1,2)
CE1#
tCO
CE2
tLZ(2)
tOHZ(1)
tOE
OE#
tOLZ
tLB, tUB
LB#, UB#
tLBLZ, tUBLZ
Data Out
High-Z
tLBHZ, tUBHZ
Data Valid
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
N04M1618L1A
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
CE1#
tCW
CE2
tLBW, tUBW
LB#, UB#
tAS
tWP
WE#
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tAW
CE1#
(for CE2 Control, use
inverted signal)
tWR
tCW
tAS
tLBW, tUBW
LB#, UB#
tWP
WE#
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N04M1618L1A
NanoAmp Solutions, Inc.
Ball Grid Array Package
BOTTOM VIEW
6 mm
0.75 mm
8 mm
0.75 mm
32-Lead STSOP-I Package (N32)44-Lead TSOP II Package (T44)
18.41mm
10.16mm
0.80mm REF
Ordering Information
N04M1618L1AX-XX X
Temperature
Performance
Package Type
I = Industrial, -40°C to 85°C
85 = 85ns @ 1.7V
T = 44-pin TSOP II
B = 48-ball BGA
D = Known Good Die
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
NanoAmp Solutions, Inc.
N04M1618L1A
Revision History
Revision #
Date
Change Description
01
11/01/02
Initial Release
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9