Diode Semiconductor Korea MBRB2030CT - - - MBRB2060CT VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A SCHOTTKY BARRIER RECTIFIERS FEATURES High s urge capacity. D 2 PAK 4.5± 0.2 1.3± 0.2 For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 10.2± 0.2 1.4± 0.2 4 PIN Guard ring for over voltage protection. 1 2 0.5± 0.2 8.9± 0.3 High current capacity, low forward voltage drop. 13.2± 0.5 Metal s ilicon junction, m ajority carrier conduction. 3 0.1± 0.1 1.3± 0.1 0.8± 0.1 MECHANICAL DATA 0.4± 0.1 5.0± 0.5 Cas e:JEDEC D2PAK,m olded plas tic body 1 1 Term inals :Solderable per MIL-STD-750, 1 Method 2026 Polarity: As m arked 3 2 Pos ition: Any Dimensions in millimeters Weight: 0.087 ounces,2.2 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBRB 2030CT MBRB 2035CT MBRB 2040CT MBRB 2045CT MBRB 2050CT MBRB 2060CT UNITS Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 V Maximum average forw ard total device m rectified current @TC = 135°C IF(AV) 20 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 150 A Maximum forw ard (IF=10A,TC=25 voltage (IF=10A,TC=125 (Note 1) (IF=20A,TC=25 (I F =20A,T C =125 Maximum reverse current at rated DC blocking voltage ) ) ) VF ) @TC =25 @TC =125 IR 0.57 0.80 0.70 0.84 0.72 0.95 0.85 0.1 0.15 15 150 mA Maximum thermal resistance (Note2) R θJC 2.0 Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range V /W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance from junction to case. www.diode.kr Diode Semiconductor Korea MBRB2030CT - - - MBRB2060CT FIG.2 -- FORWARD DERATING CURVE AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 -- PEAK FORWARD SURGE CURRENT 150 120 8.3ms Single Half Sine Wave TJ=125 90 60 30 0 1 10 100 20 16 12 8 4 0 0 30 NUMBER OF CYCLES AT 60HZ MBRB2050CT-MBRB2060CT .2 .4 .6 .8 1.0 1 .2 1 .4 1 .6 1 .8 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 2.2 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES MBRB2030CT-MBRB2045CT TJ =25 Pulse width=300 S 1% Duty Cycle 1 120 150 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 200 10 90 CASE TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 100 60 10 Tc=100℃ MBRB2050CT-MBRB2060CT MBRB2030CT- MBRB2045CT 1.0 MBRB2050CT-MBRB2060CT 0.1 TC=25℃ MBRB2030CT -MBRB2045CT .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr