BC 846W ... BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW Plastic case Kunststoffgehäuse SOT-323 Weight approx. – Gewicht ca. 2 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 846W BC 847W BC 850W BC 848W BC 849W Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 5V 1 Power dissipation – Verlustleistung Ptot 200 mW ) Collector current – Kollektorstrom (DC) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Group A Group B Group C 2 DC current gain – Kollektor-Basis-Stromverhältnis ) VCE = 5 V, IC = 10 :A hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800 Small signal current gain – Stromverstärkung hfe typ. 220 typ. 330 typ. 600 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz 1 Input impedance – Eingangs-Impedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance – Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 12 01.11.2003 General Purpose Transistors BC 846W ... BC 850W Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. – Kollektor-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA VCEsat – 90 mV 250 mV IC = 100 mA, IB = 5 mA VCEsat – 200 mV 600 mV VBEsat – 700 mV – VBEsat – 900 mV – VCE = 5 V, IC = 2 mA VBEon 580 mV 660 mV 700 mV VCE = 5 V, IC = 10 mA VBEon – – 770 mV IE = 0, VCB = 30 V ICB0 – – 15 nA IE = 0, VCB = 30 V, Tj = 150/C ICB0 – – 5 :A IEB0 – – 100 nA 1 Base saturation voltage – Basis-Sättigungsspannung ) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 Base-Emitter voltage – Basis-Emitter-Spannung ) Collector-Base cutoff current – Kollektorreststrom Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 3.5 pF 6 pF – 9 pF – – 2 dB 10 dB 1.2 dB 4 dB Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, f = 30 ... 15000 Hz BC 846W... F BC 848W BC 849W... F BC 850W BC 849W F – 1.4 dB 4 dB BC 850W F – 1.4 dB 4 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ 620 K/W 2) RthA BC 856W ... BC 860W BC 846AW = 1A BC 846BW = 1B BC 847AW = 1E BC 847BW = 1F BC 847CW = 1G BC 848AW = 1J BC 848BW = 1K BC 848CW = 1L BC 849BW = 2B BC 849CW = 2C BC 850BW = 2F BC 850CW = 2G ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 13