Infineon BGA734L16 Low power tri-band umts lna (2100, 1900, 800 mhz) Datasheet

Data Sheet, V1.0, January 2008
BGA734L16
Low Power Tri-Band UMTS LNA
(2100, 1900, 800 MHz)
RF & Protection Devices
Edition 2008-01-25
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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BGA734L16 - Low Power Tri-Band UMTS LNA
BGA734L16
Revision History: 2008-01-25, V1.0
Previous Version: V1.2, 2007-07-18
Page
Subjects (major changes since last revision)
8-10
Improved low gain mode IIP3
8-10
Improved low gain mode P1dB
Data Sheet
3
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Description
1
Description
The BGA734L16 is a highly flexible tri-band (2100, 1900, 850/800 MHz) low noise amplifier MMIC for worldwide
use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA734L16 features dynamic gain
control, temperature stabilization, standby mode, and 1 kV ESD protection on-chip and matching off chip. Because
the matching is off chip, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing
the input and output matching network. This document specifies device performance for the most common band
combination - UMTS bands I, II, and V.
Features
• Gain: 15 / -8 dB in high / low gain
• Noise figure: 1.2 dB in high gain mode
• Low Band (5, 6, 8, FOMA800)
• Mid Band (2, 3, 9, FOMA1700)
• High Band (1, 4, 10)
• High and low gain modes support
• Supply current: 3.5 / 0.65 mA in high / low gain modes
• Standby mode (<10 µA typ)
• 1 kV HBM ESD protection
• Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
• Pb-free (RoHS compliant) package
TSLP-16-1 package
5 n/c
4 RFGNDH
3 VCC
2 VGS
6
n/c
1
16
RFINM
RFOUTM
7
15
RFINH
RFOUTH
14
8
RFOUTL
RFGNDM
Biasing & Logic
Circuitry
9
Figure 1
n/c
10 RFINL
11 VEN2
12 VEN1
n/c 13
Block diagram of triple-band LNA
Type
Package
Marking
Chip
BGA734L16
TSLP-16-1
BGA734
T1520
Data Sheet
4
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Absolute Maximum Ratings
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings
Parameter
Symbol
VCC
Supply current
ICC
Pin voltage
VPIN
Pin voltage RF input pins
VRFIN
RF input power
PRFIN
Junction temperature
Tj
Ambient temperature range TA
Storage temperature range TSTG
Supply voltage
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
Thermal resistance junction RthJS
to soldering point
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
Symbol
Values
Unit
Min.
Max.
-0.3
3.6
V
5
mA
-0.3
VCC +0.3
V
-0.3
0.9
V
4
dBm
150
°C
-30
85
°C
-65
150
°C
Note / Test Condition
All pins except RF input pins
Value
Unit
Note / Test Conditions
≤ 110
K/W
Value
Unit
Note / Test Conditions
V
All pins
Typ.
ESD hardness HBM
1)
VESD-HBM
1000
1) According to JESD22-A114
Data Sheet
5
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
DC Characteristics
2.4
DC Characteristics
Table 4
DC Characteristics, TA = 25 °C
Parameter
Symbol
Supply voltage
VCC
ICCHG
Supply current high gain
mode
Values
Min.
Typ.
Max.
2.7
2.8
3.0
All bands
µA
All bands
650
Supply current standby
mode
ICCOFF
0.1
Logic level high
VHI
VLOW
IENL
IENH
IGSL
IGSH
Logic currents VEN
Logic currents VGS
V
mA
ICCLG
1.5
Note / Test Condition
3.5
Supply current low gain
mode
Logic level low
Unit
µA
2
2.8
V
0.0
0.5
V
0.2
µA
10.0
µA
0.1
µA
5.0
µA
2.5
Band Select / Gain Control Truth Table
Table 5
Band Select Truth Table
VEN1 and VEN2
VEN1 and VEN2
VGS
Band I
Band II
Band V
Power Down
VCC
H
H
H
H
VEN1
H
H
L
L
VEN2
H
L
H
L
Table 6
VGS
Data Sheet
Gain Control Truth Table
High Gain
Low Gain
H
L
6
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Logic Signal Characteristics; TA = 25 °C
Logic Signal Characteristics; TA = 25 °C
2.6
Current consumption of logic inputs VEN1, VEN2, VGS
Logic currents IEN1,2 = f(VEN1,2)
VCC = 2.8 V
Logic currents IGS = f(VGS)
VCC = 2.8 V
12
6
10
4
IGS [µA]
IEN1,2 [µA]
8
6
4
2
2
0
0
0.5
1
1.5
2
2.5
0
3
0
0.5
1
VEN1,2 [V]
2.7
Switching Times
Table 7
Typical switching times; TA = -30... 85 °C
Parameter
1.5
2
2.5
3
VGS [V]
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Settling time gainstep
tGS
1.2
µs
Switching LG ↔ HG all
bands
Settling time bandselect
tBS
1.2
µs
Switching from any band
to a different band
Data Sheet
7
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics Low Band (UMTS Band V)
2.8
Measured RF Characteristics Low Band (UMTS Band V)
Table 8
Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Pass band range
869
894
MHz
Input power range
-100
0
dBm
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -25 dBm
Note / Test Condition
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
S11LG
S22HG
S22LG
k
3.5
mA
High gain mode
0.65
mA
Low gain mode
15.2
dB
High gain mode
-6.8
dB
Low gain mode
-34
dB
High gain mode
-6.8
dB
Low gain mode
1.2
dB
High gain mode
6.9
dB
Low gain mode
-13
dB
50 Ω, high gain mode
-18
dB
50 Ω, low gain mode
-24
dB
50 Ω, high gain mode
-11
dB
50 Ω, low gain mode
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-12
dBm
High gain mode
-6
dBm
Low gain mode
-6
5
dBm
High gain mode
Low gain mode
>2.1
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
8
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics Mid Band (UMTS Band II)
2.9
Measured RF Characteristics Mid Band (UMTS Band II)
Table 9
Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Pass band range
1930
1990
MHz
Input power range
-100
0
dBm
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -26 dBm
Note / Test Condition
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
S11LG
S22HG
S22LG
k
3.4
mA
High gain mode
0.65
mA
Low gain mode
16.5
dB
High gain mode
-6.9
dB
Low gain mode
-35
dB
High gain mode
-7
dB
Low gain mode
1.0
dB
High gain mode
6.8
dB
Low gain mode
-13
dB
50 Ω, high gain mode
-12
dB
50 Ω, low gain mode
-20
dB
50 Ω, high gain mode
-17
dB
50 Ω, low gain mode
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-10
dBm
High gain mode
-4
dBm
Low gain mode
-5
6
dBm
High gain mode
Low gain mode
>2.0
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
9
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics High Band (UMTS Band I)
2.10
Measured RF Characteristics High Band (UMTS Band I)
Table 10
Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Pass band range
2110
2170
MHz
Input power range
-100
0
dBm
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -27 dBm
Note / Test Condition
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
S11LG
S22HG
S22LG
k
3.5
mA
High gain mode
0.65
mA
Low gain mode
16.5
dB
High gain mode
-7.7
dB
Low gain mode
-36
dB
High gain mode
-8
dB
Low gain mode
1.1
dB
High gain mode
7.4
dB
Low gain mode
-13
dB
50 Ω, high gain mode
-27
dB
50 Ω, low gain mode
-18
dB
50 Ω, high gain mode
-9
dB
50 Ω, low gain mode
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-11
dBm
High gain mode
-4
dBm
Low gain mode
-6
7
dBm
High gain mode
Low gain mode
>1.8
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
10
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Low Band High Gain Mode vs. Frequency
2.11
Measured Performance Low Band High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V
Power Gain |S21| = f ( f )
Power Gain Wideband |S21| = f ( f )
18
20
17.5
10
16.5
Power Gain [dB]
Power Gain [dB]
17
−30°C
16
15.5
25°C
15
14.5
0
−10
−20
85°C
14
−30
13.5
13
0.86
0.87
0.88
0.89
−40
0.9
0
Frequency [GHz]
24
−5
23.5
−10
8
23
S
11
Delta Gain [dB]
|S11|, |S22| [dB]
6
Gainstep HG - LG |∆S21| = f ( f )
0
−15
S
−20
22
−25
22.5
−30°C
21.5
21
−35
20.5
0.87
0.88
0.89
20
0.86
0.9
Frequency [GHz]
25°C
85°C
22
−30
Data Sheet
4
Frequency [GHz]
Matching |S11| = f ( f ), |S22| = f ( f )
−40
0.86
2
0.87
0.88
0.89
0.9
Frequency [GHz]
11
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Low Band High Gain Mode vs. Temperature
Noise Figure NF = f ( f )
Input Compression P1dB = f ( f )
1.5
−8
1.4
−9
1.3
−10
P1dB [dBm]
NF [dB]
1.2
1.1
1
0.9
−11
−12
0.8
−13
0.7
0.6
0.86
0.87
0.88
0.89
−14
0.86
0.9
0.87
Frequency [GHz]
2.12
0.88
0.89
0.9
Frequency [GHz]
Measured Performance Low Band High Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
19
4
3.9
3.8
3.7
17
ICC [mA]
Power Gain [dB]
18
16
15
3.6
3.5
3.4
3.3
3.2
14
3.1
13
−40
−20
0
20
40
60
80
3
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
12
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Low Band Low Gain Mode vs. Frequency
Noise Figure NF = f (TA)
Input Compression P1dB = f (TA)
1.8
−4
1.6
−6
1.4
P1dB [dBm]
NF [dB]
−8
1.2
1
−10
−12
0.8
−14
0.6
0.4
−40
−20
0
20
40
60
80
−16
−40
100
−20
0
TA [°C]
2.13
20
40
60
80
100
TA [°C]
Measured Performance Low Band Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V
Power Gain |S21| = f ( f )
Power Gain Wideband |S21| = f ( f )
−5
0
−5.5
−10
−30°C
Power Gain [dB]
Power Gain [dB]
−6
−6.5
25°C
−7
85°C
−7.5
−20
−30
−40
−8
−50
−8.5
−9
0.86
0.87
0.88
0.89
−60
0.9
Frequency [GHz]
Data Sheet
0
2
4
6
8
Frequency [GHz]
13
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Low Band Low Gain Mode vs. Frequency
Matching |S11| = f ( f ), |S22| = f ( f )
Noise Figure NF = f ( f )
0
9
−5
8.5
S
8
22
−15
7.5
S
11
NF [dB]
|S11|, |S22| [dB]
−10
−20
7
−25
6.5
−30
6
−35
5.5
−40
0.86
0.87
0.88
0.89
5
0.86
0.9
Frequency [GHz]
0.87
0.88
0.89
0.9
Frequency [GHz]
Input Compression P1dB = f ( f )
−2
−3
P1dB [dBm]
−4
−5
−6
−7
−8
0.86
0.87
0.88
0.89
0.9
Frequency [GHz]
Data Sheet
14
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Low Band Low Gain Mode vs. Temperature
2.14
Measured Performance Low Band Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
−5
0.8
−5.5
0.75
−6.5
0.7
−7
ICC [mA]
Power Gain [dB]
−6
−7.5
−8
0.65
0.6
−8.5
−9
0.55
−9.5
−10
−40
−20
0
20
40
60
80
0.5
−40
100
−20
0
TA [°C]
9.5
−1
9
−2
8.5
−3
P1dB [dBm]
NF [dB]
0
8
7.5
7
100
−5
−6
−7
6
−8
5.5
−9
20
40
60
80
−10
−40
100
T [°C]
−20
0
20
40
60
80
100
T [°C]
A
Data Sheet
80
−4
6.5
0
60
Input Compression P1dB = f (TA)
10
−20
40
TA [°C]
Noise Figure NF = f (TA)
5
−40
20
A
15
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Mid Band High Gain Mode vs. Frequency
2.15
Measured Performance Mid Band High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V
Power Gain |S21| = f ( f )
Power Gain Wideband |S21| = f ( f )
18
20
−30°C
17.5
10
16.5
Power Gain [dB]
Power Gain [dB]
17
25°C
16
15.5
85°C
15
14.5
14
0
−10
−20
−30
13.5
13
1.93
1.94
1.95
1.96
1.97
1.98
−40
1.99
0
2
Frequency [GHz]
26
−5
25.5
−10
25
S11
−15
Delta Gain [dB]
|S11|, |S22| [dB]
0
S
22
−20
−25
24
−30°C
23.5
25°C
23
−35
22.5
1.95
1.96
1.97
1.98
22
1.93
1.99
Frequency [GHz]
Data Sheet
8
24.5
−30
1.94
6
Gainstep HG - LG |∆S21| = f ( f )
Matching |S11| = f ( f ), |S22| = f ( f )
−40
1.93
4
Frequency [GHz]
85°C
1.94
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
16
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Mid Band High Gain Mode vs. Temperature
Noise Figure NF = f ( f )
Input Compression P1dB = f ( f )
1.5
−8
1.4
−9
1.3
−10
P1dB [dBm]
NF [dB]
1.2
1.1
1
0.9
−11
−12
0.8
−13
0.7
0.6
1.93
1.94
1.95
1.96
1.97
1.98
−14
1.93
1.99
1.94
Frequency [GHz]
2.16
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
Measured Performance Mid Band High Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
19
4
3.9
3.8
3.7
17
ICC [mA]
Power Gain [dB]
18
16
15
3.6
3.5
3.4
3.3
3.2
14
3.1
13
−40
−20
0
20
40
60
80
3
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
17
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Mid Band Low Gain Mode vs. Frequency
Noise Figure NF = f (TA)
Input Compression P1dB = f (TA)
1.8
−4
1.6
−6
1.4
P1dB [dBm]
NF [dB]
−8
1.2
1
−10
−12
0.8
−14
0.6
0.4
−40
−20
0
20
40
60
80
−16
−40
100
−20
0
TA [°C]
2.17
20
40
60
80
100
TA [°C]
Measured Performance Mid Band Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V
Power Gain |S21| = f ( f )
Power Gain Wideband |S21| = f ( f )
−5
0
−5.5
−10
−30°C
Power Gain [dB]
Power Gain [dB]
−6
−6.5
25°C
−7
85°C
−7.5
−20
−30
−40
−8
−50
−8.5
−9
1.93
1.94
1.95
1.96
1.97
1.98
−60
1.99
Frequency [GHz]
Data Sheet
0
2
4
6
8
Frequency [GHz]
18
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Mid Band Low Gain Mode vs. Frequency
Noise Figure NF = f ( f )
0
9
−5
8.5
−10
S
8
−15
S
7.5
11
22
NF [dB]
|S11|, |S22| [dB]
Matching |S11| = f ( f ), |S22| = f ( f )
−20
7
−25
6.5
−30
6
−35
5.5
−40
1.93
1.94
1.95
1.96
1.97
1.98
5
1.93
1.99
Frequency [GHz]
1.94
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
Input Compression P1dB = f ( f )
−2
−3
P1dB [dBm]
−4
−5
−6
−7
−8
1.93
1.94
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
Data Sheet
19
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance Mid Band Low Gain Mode vs. Temperature
2.18
Measured Performance Mid Band Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V
Input Compression P1dB = f (TA)
10
0
9.5
−1
9
−2
8.5
−3
P1dB [dBm]
NF [dB]
Noise Figure NF = f (TA)
8
7.5
7
−4
−5
−6
6.5
−7
6
−8
5.5
−9
5
−40
−20
0
20
40
60
80
−10
−40
100
TA [°C]
Data Sheet
−20
0
20
40
60
80
100
TA [°C]
20
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band High Gain Mode vs. Frequency
2.19
Measured Performance High Band High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V
Power Gain |S21| = f ( f )
Power Gain Wideband |S21| = f ( f )
20
18
17.5
−30°C
10
16.5
Power Gain [dB]
Power Gain [dB]
17
25°C
16
15.5
85°C
15
14.5
14
0
−10
−20
−30
13.5
13
2.11
−40
2.12
2.13
2.14
2.15
2.16
2.17
0
2
4
6
8
Frequency [GHz]
Frequency [GHz]
Gainstep HG - LG |∆S21| = f ( f )
Matching |S11| = f ( f ), |S22| = f ( f )
0
28
27.5
−5
27
26.5
S
11
−15
Delta Gain [dB]
|S11|, |S22| [dB]
−10
S22
−20
−25
−30
26
25.5
25
24.5
−30°C
24
25°C
85°C
23.5
23
−35
22.5
−40
2.11
2.12
2.13
2.14
2.15
2.16
22
2.11
2.17
Frequency [GHz]
Data Sheet
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
21
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band High Gain Mode vs. Temperature
Noise Figure NF = f ( f )
Input Compression P1dB = f ( f )
1.5
−8
1.4
−9
1.3
−10
P1dB [dBm]
NF [dB]
1.2
1.1
1
0.9
−11
−12
0.8
−13
0.7
0.6
2.11
2.12
2.13
2.14
2.15
2.16
−14
2.11
2.17
2.12
Frequency [GHz]
2.20
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
Measured Performance High Band High Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
19
4
3.9
3.8
3.7
17
ICC [mA]
Power Gain [dB]
18
16
15
3.6
3.5
3.4
3.3
3.2
14
3.1
13
−40
−20
0
20
40
60
80
3
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
22
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band Low Gain Mode vs. Frequency
Noise Figure NF = f (TA)
Input Compression P1dB = f (TA)
1.8
−4
1.6
−6
1.4
P1dB [dBm]
NF [dB]
−8
1.2
1
−10
−12
0.8
−14
0.6
0.4
−40
−20
0
20
40
60
80
−16
−40
100
−20
0
TA [°C]
2.21
20
40
60
80
100
TA [°C]
Measured Performance High Band Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V
Power Gain |S21| = f ( f )
Power Gain Wideband |S21| = f ( f )
−5
0
−5.5
−10
Power Gain [dB]
Power Gain [dB]
−6
−6.5
−30°C
−7
25°C
−7.5
−40
−50
−8.5
2.12
2.13
2.14
2.15
2.16
−60
2.17
Frequency [GHz]
Data Sheet
−30
85°C
−8
−9
2.11
−20
0
2
4
6
8
Frequency [GHz]
23
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band Low Gain Mode vs. Frequency
Matching |S11| = f ( f ), |S22| = f ( f )
Noise Figure NF = f ( f )
0
9
−5
8.5
S
22
8
−15
7.5
NF [dB]
|S11|, |S22| [dB]
−10
−20
S11
7
−25
6.5
−30
6
−35
5.5
−40
2.11
2.12
2.13
2.14
2.15
2.16
5
2.11
2.17
Frequency [GHz]
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
Input Compression P1dB = f ( f )
−2
−3
P1dB [dBm]
−4
−5
−6
−7
−8
2.11
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
Data Sheet
24
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band Low Gain Mode vs. Temperature
2.22
Measured Performance High Band Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
−5
0.8
−5.5
0.75
−6.5
0.7
−7
ICC [mA]
Power Gain [dB]
−6
−7.5
−8
0.65
0.6
−8.5
−9
0.55
−9.5
−10
−40
−20
0
20
40
60
80
0.5
−40
100
−20
0
TA [°C]
9.5
−1
9
−2
8.5
−3
P1dB [dBm]
NF [dB]
0
8
7.5
7
100
−5
−6
−7
6
−8
5.5
−9
20
40
60
80
−10
−40
100
T [°C]
−20
0
20
40
60
80
100
T [°C]
A
Data Sheet
80
−4
6.5
0
60
Input Compression P1dB = f (TA)
10
−20
40
TA [°C]
Noise Figure NF = f (TA)
5
−40
20
A
25
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Application Circuit and Block Diagram
UMTS bands I, II and V Application Circuit Schematic
3
Application Circuit and Block Diagram
3.1
UMTS bands I, II and V Application Circuit Schematic
VCC= 2.8 V
VGS= 0 / 2.8 V
C7
10nF
0 GND
5 n/c
RFIN
1900 MHz
3 VCC
2 VGS
n/c
1
C1
10pF
6
C2
22pF
RFIN
2100 MHz
4 RFGNDH
16
L1
RFINM
L1
3.9nH
3.9nH
RFOUTM
C3
10pF
L2
2.7nH
7
15
RFINH
RFOUTH
RFOUT
1900 MHz
RFOUT
2100 MHz
C4
22pF
14
8
RFOUTL
RFGNDM
RFOUT
800 MHz
Biasing & Logic
Circuitry
9 n/c
10 RFINL
11 VEN2
12 VEN1
n/c 13
C5
3.0pF
RFIN
800 MHz
C6
22pF
Figure 2
L3
9.1nH
VEN= 0 / 2.8 V
VEN= 0 / 2.8 V
Application circuit with chip outline (top view)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 11
Parts List
Part Number
Part Type
Manufacturer
Size
Comment
L1 ... L3
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C7
Chip capacitor
Various
0402
Data Sheet
26
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Application Circuit and Block Diagram
Pin Definition
3.2
Pin Definition
Table 12
Pin Definition and Function
Pin Number
Symbol
Function
0
GND
Ground connection for low band (800 MHz) LNA and control circuity
(package paddle)
1
n/c
Not connected
2
VGS
Gain step control
3
VCC
Supply voltage
4
RFGNDH
High band (2100 MHz) LNA emitter ground
5
n/c
Not connected
6
RFINM
Mid band (1900 MHz) LNA input
7
RFINH
High band (2100 MHz) LNA input
8
RFGNDM
Mid band (1900 MHz) LNA emitter ground
9
n/c
Not connected
10
RFINL
Low band (800 MHz) LNA input
11
VEN2
Band select control
12
VEN1
Band select control
13
n/c
Not connected
14
RFOUTL
Low band (800 MHz) LNA output
15
RFOUTH
High band (2100 MHz) LNA output
16
RFOUTM
Mid band (1900 MHz) LNA output
Data Sheet
27
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Application Circuit and Block Diagram
Application Board
3.3
Application Board
Top layer (top view)
Figure 3
Figure 4
Data Sheet
Middle layer (top view)
Bottom layer (top view)
Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness:
0.8 mm, 35 µm Cu metallization, gold plated. Board size: 21 x 50 mm
0.017 mm
0.100 mm
Copper
Prepreg FR4
0.100 mm
0.035 mm
Prepreg FR4
Copper
0.460 mm
FR4
0.100 mm
Prepreg FR4
0.100 mm
0.017 mm
Prepreg FR4
Copper
Cross-section view of application board
28
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Application Circuit and Block Diagram
RFINM
5
4
3
GS
VCC
RFGNDH
Application Board
2
6
RFINH
GND
7
RFOUTM
15
RFOUTH
11
12
RFOUTL
13
EN1
10
EN2
9
16
14
RFINL
8
1
RFGNDM
Figure 5
Detail of application board layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
29
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Physical Characteristics
Package Footprint
4
Physical Characteristics
4.1
Package Footprint
Figure 6
Recommended footprint and stencil layout for the TSLP-16-1 package.
Data Sheet
30
V1.0, 2008-01-25
BGA734L16 - Low Power Tri-Band UMTS LNA
Physical Characteristics
Package Dimensions
4.2
Package Dimensions
Top view
Bottom view
2.3 ±0.05
0.39 +0.01
-0.03
2 ±0.05
0.05 MAX.
1±0.05
9
10
11
12
16
4
3
2
2.3 ±0.05
6
1
1 6 x 0.2 ±0.035
1) Dimension applies to plated terminals
Data Sheet
15
1 6 x 0.2 ±0.035
7
5
Pin 1 marking
Figure 7
14
1.4 ±0.035 1)
0 . 0 5 x 45˚
8
1±0.05
1.4 ±0.035
2 ±0.05
13
GPC01203
Package outline (top, side and bottom view)
31
V1.0, 2008-01-25