Diode Semiconductor Korea BYV36A(Z)---BYV36E(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.5-1.6 A FAST RECOVERY RECTIFIERS FEATURES Low cos t DO-15 Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces ,0.39 gram s Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYV 36A BYV 36B BYV 36C BYV 36D BYV 36E UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Maximum RMS voltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 200 600 800 1000 V Maximum average forw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 1.6 A IFSM 30.0 A Peak forw ard surge current 10ms single half-sine-w ave @TJ =125 superimposed on rated load Maximum instantaneous forw ard voltage @ 1.0A Maximum reverse current @TA =25 at rated DC blocking voltage @TA =100 VF 1.35 1.45 5.0 IR 100 150 t rr Typical junction capacitance (Note2) CJ 18 Typical thermal resistance (Note3) Rθ JA 45 TJ -55 ---- + 150 TSTG -55 ---- + 150 Storage temperature range A 100.0 Maximum reverse recovery time (Note1) Operating junction temperature range V ns pF /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr BYV36A(Z)---BYV36E(Z) Diode Semiconductor Korea FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 --PEAK FORWARD SURGE CURRENT 1.75 1.50 1.25 1.00 0.75 0.50 Single Phase Half W ave 60Hz 0.25 Resistive or Inductive Load 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.2 --FORWARD DERATING CURVE 0 30 25 20 TJ=125 8.3ms Single Half Sine-Wave 15 10 5 1 100 10 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.4--TYPICAL JUNCTION CAPACITANCE 100 100 10 T J =25 Pulse W idth=300 µ S 4 BYV36A ~ BYV36C 2 1.0 0.4 BYV36D BYV36E 0.2 0.1 0.06 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT AMPERES 1cm SET TIMEBASEFOR 50/100 ns /cm 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr