ASI CBSL30 Npn silicon rf power transistor Datasheet

CBSL30
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .230 6L FLG
The ASI CBSL30 is Designed for
A
.040x45°
B
C
2XØ.130
4X .025 R
FEATURES:
.115
.430 D
•
•
• Omnigold™ Metalization System
E
F
.125
G
H
I
J K
MAXIMUM RATINGS
7.5 A
IC
48V
VCBO
25 V
VCEO
3.5 V
VEBO
PDISS
O
88 W @ TC = 25 C
O
O
-65 C to +200 C
TJ
O
-65 C to +150 C
θ JC
3.0 OC/W
CHARACTERISTICS
BVCBO
BVCER
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.355 / 9.02
.365 / 9.27
B
.115 / 2.92
.125 / 3.18
C
.075 / 1.91
.085 / 2.16
D
.225 / 5.72
.235 / 5.97
E
.090 / 2.29
.110 / 2.79
F
.720 / 18.29
.730 / 18.54
G
.970 / 24.64
.980 / 24.89
H
.355 / 9.02
.365 / 9.27
I
.004 / 0.10
.006 / 0.15
J
.120 / 3.05
.130 / 3.30
K
.160 / 4.06
.180 / 4.57
L
.230 / 5.84
.260 / 6.60
O
TSTG
SYMBOL
L
ORDER CODE: ASI10582
O
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA
RBE = 150 Ω
MINIMUM TYPICAL MAXIMUM
UNITS
48
55
---
V
30
40
---
V
25
28
---
BVCEO
IC = 40 mA
IC = 40 mA
BVEBO
IE = 10 mA
3.5
5.0
---
V
ICBO
VCE = 24 V
10
---
---
mA
hFE
VCE = 20 V
15
40
100
---
COB
VCB = 25 V
50
pF
PG
IMD3
VCE = 25 V
POUT = 30 W
---
dB
dBc
IC = 2.0 A
f = 1.0 MHz
ICQ = 150 mA
f1 = 860.0 MHz
f = 860 MHz
f2 = 860.1 MHz
7.5
-35
VSWR1
VCE = 25 V
VCE = 25 V ± 20%
VSWR = 20:1
VSWR = 10:1
No Degradation in
Output Device
Typ.
VSWR2
VCE = 25 V ± 20%
PIN = PIN (norm) +3 dB
VSWR = 5:1
No Degradation in
Output Device
Typ.
No Degradation in
Output Device
Typ.
OVD
VCE = 25 V
VCE = 25 V ± 20%
PIN (norm) = +5 Db
PIN (norm) = +3 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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