Diode Semiconductor Korea FAST RECOVERY RECT IFIERS BYT77---BYT78 VOLTAGE RANGE: 800 --- 1000 V CURRENT: 3.0 A FEATURES Low cos t DO - 27 Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e: JEDEC DO--27,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041ounces , 1.15 gram s Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYT 7 7 BYT 7 8 UNITS Maximum recurrent peak reverse voltage VR R M 800 1000 V Maximum RMS voltage V R MS 560 700 V Maximum DC blocking voltage VD C 800 1000 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF (AV) 3.0 A IF SM 100 A VF 1.1 V Peak f orw ard surge current 10ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 IR 5.0 A 150 Maximum reverse recovery time (Note1) t rr 300 ns Typical junction capacitance (Note2) CJ 32 pF Typical thermal resistance (Note3) Rθ JA 25 TJ -55-----+150 TSTG -55-----+150 Operating junction temperature range Storage temperature range /W N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.diode.kr Diode Semiconductor Korea BYT77---BYT78 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 10 N.1. 50 N.1. +0.5A D.U.T. ( - ) 0 (+) 50VDC (APPROX) (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 --PEAK FORWARD SURGE CURRENT 3.0 2.4 1.8 Single Phase Half Walf 50Hz Resistive or Inductive Load 0.6 0 0 25 50 100 75 150 125 175 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT AMPERES FIG.2 --FORWARD DERATING CURVE 1.2 100 TJ =125 10ms Single Half Sine-Wave 80 60 40 20 0 1 AMBIENT TEMPERATURE, 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 50 Hz FIG.5-- TYPICAL JUNCTION CAPACITANCE FIG.4--TYPICAL FORWARD CHARACTERISTIC 200 100 TJ =25 Pulse Width=300 µS 40 20 10 4.0 2.0 1.0 0.6 0.4 0.2 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS JUNCTION CAPACITANCE pF INSTANTANEOUS REVERSE CURRENT AMPERES 1 cm SET TIME BASE FOR 50/100 ns /cm 100 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr