DSK BYT77 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
FAST RECOVERY RECT IFIERS
BYT77---BYT78
VOLTAGE RANGE: 800 --- 1000 V
CURRENT: 3.0 A
FEATURES
Low cos t
DO - 27
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces , 1.15 gram s
Dimensions in millimeters
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYT 7 7
BYT 7 8
UNITS
Maximum recurrent peak reverse voltage
VR R M
800
1000
V
Maximum RMS voltage
V R MS
560
700
V
Maximum DC blocking voltage
VD C
800
1000
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA =75
IF (AV)
3.0
A
IF SM
100
A
VF
1.1
V
Peak f orw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =125
IR
5.0
A
150
Maximum reverse recovery time (Note1)
t rr
300
ns
Typical junction capacitance
(Note2)
CJ
32
pF
Typical thermal resistance
(Note3)
Rθ JA
25
TJ
-55-----+150
TSTG
-55-----+150
Operating junction temperature range
Storage temperature range
/W
N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
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Diode Semiconductor Korea
BYT77---BYT78
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
0
(+)
50VDC
(APPROX)
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.3 --PEAK FORWARD SURGE CURRENT
3.0
2.4
1.8
Single Phase
Half Walf 50Hz
Resistive or
Inductive Load
0.6
0
0
25
50
100
75
150
125
175
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
FIG.2 --FORWARD DERATING CURVE
1.2
100
TJ =125
10ms Single
Half
Sine-Wave
80
60
40
20
0
1
AMBIENT TEMPERATURE,
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 50 Hz
FIG.5-- TYPICAL JUNCTION CAPACITANCE
FIG.4--TYPICAL FORWARD CHARACTERISTIC
200
100
TJ =25
Pulse Width=300 µS
40
20
10
4.0
2.0
1.0
0.6
0.4
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
JUNCTION CAPACITANCE pF
INSTANTANEOUS REVERSE CURRENT
AMPERES
1 cm
SET TIME BASE FOR 50/100 ns /cm
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
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