MT60C18T1 Thyristor Modules VRRM / VDRM 800 to 1800V ITAV 60A Applications Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control y y y y Circuit Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate UL recognized applied for file no. E360040 Module Type TYPE VRRM VRSM MT60C08T1 MT60C12T1 MT60C16T1 MT60C18T1 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Values Units ITAV o Sine 180 ;Tc=85℃ 60 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1250 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 11000 8000 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V Tvj -40 to 125 Tstg -40 to 125 Mt To terminals(M5) 3±15% ℃ ℃ Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.57/0.29 ℃/W Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W Thermal Characteristics Document Number: S-M0035 Rev.1.0, May.31, 2013 www.apt-semi.com 1 MT60C18T1 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25℃ ITM =200A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.65 V 15 mA For power-loss calculations only (TVJ =125℃) TVJ =TVJM 0.9 V rT 3.5 mΩ VGT TVJ =25℃ , VD =6V 3.0 V IGT VGD TVJ =25℃ , VD =6V TVJ =125℃ , VD =2/3VDRM 150 0.25 mA V IGD TVJ =125℃ , VD =2/3VDRM IL TVJ =25℃ , RG = 33 Ω TVJ =25℃ , VD =6V IRRM/IDRM VTO IH tgd tq Document Number: S-M0035 Rev.1.0, May.31, 2013 Min. TVJ =25℃, IG=1A, diG/dt=1A/us TVJ =TVJM Max. Units 6 mA 300 600 mA 150 250 1 mA us 80 us www.apt-semi.com 2 MT60C18T1 Performance Curves 90 100 A sin.180 W rec.120 72 DC 75 DC rec.60 sin.180 54 rec.120 rec.30 50 rec.60 36 rec.30 25 18 PTAV ITAVM 0 0 ITAV 25 25 0 A 75 0 Tc Fig1. Power dissipation 50 100 ℃ 130 Fig2.Forward Current Derating Curve 2000 1.0 50HZ A ℃/ W Zth(j-S) Zth(j-C) 0.5 0 0.001 t 0.01 0.1 1 10 1000 0 S 100 Fig3. Transient thermal impedance 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 250 A 10 Typ. 200 150 max. 100 25 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics Document Number: S-M0035 Rev.1.0, May.31, 2013 www.apt-semi.com 3 MT60C18T1 100 1/2·MT60C18T1 V 20V;20Ω 10 VGT ∧ 1 VG Tvj PG(tp) -40℃ 25℃ 125℃ IGT VGD125℃ IGD125℃ 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 Dimensions in mm Document Number: S-M0035 Rev.1.0, May.31, 2013 www.apt-semi.com 4