Yea Shin GBJ1008 10a glass passivated bridge rectifier Datasheet

DATA SHEET
GBJ10005 THRU GBJ1010
SEMICONDUCTOR
10A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
GBJ
•Glass Passivated Die Construction
Dim
Min
Max
A
29.70
30.30
L
B
19.70
20.30
M
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
•Surge Overload Rating to 170A Peak
A
K
•Ideal for Printed Circuit Board Applications
•Plastic Material - UL Flammability
Classification 94V-0
_
•UL Listed Under Recognized Component
J
Index, File Number E94661
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
B
S
N
P
D
H
C
R
I
environment substance directive request
MECHANICAL DATA
G
•Case: Molded Plastic
E
E
•Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity: Molded on Body
3.0 X 45°
K
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Weight: 6.6 grams (approx.)
•Marking: Type Number
Maximum Ratings and Electrical Characteristics @ TA = 25_C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Characteristic
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Rectified Output Current
@ TC= 100℃
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
10005
1001
1002
1004
1006
1008
1010
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
Unit
IO
10
A
IFSM
170
A
VFM
1.05
V
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element @ IF = 5.0A
Peak Reverse Current @TC = 25℃
at Rated DC Blocking Voltage @ TC = 125℃
IR
10
500
μA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
120
Typical Junction Capacitance per Element (Note 2)
Cj
55
pF
R_JC
1.4
℃/W
Tj, TSTG
-55 to +150
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
A2s
℃
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
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1
REV.02 20120305
DEVICE CHARACTERISTICS
10
FORWARD SURGE CURRENT, AMPERES pk
(HALF SINE-WAVE)
AVERAGE FORWARD CURRENT
AMPERES
GBJ10005 THRU GBJ1010
HEAT-SINK
MOUNTING, TC
(4X4X0.15) INCH
COPPER PLATE
8
6
4
60Hz RESISTIVE OR
INDUCTIVE LOAD
MOUNTED ON 0.5X0.5 INCH
COPPER PC BOARD, TA
0.5"(12.7mm) LEAD LENGTH
2
0
0
50
100
150
200
160
120
80
40
0
1
Fig.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
INSTANTANEOUS FORWARD CURRENT, AMPERES
REVERSE CURRENT,uA
10 3
O
10
T J =150 C
10 1
10
0
O
T J =25 C
10
10
-1
-2
0
10
20
30
40
50
60
70
80
90
100 110
40
60
100
100
40
20
10
4.0
2.0
1.0
O
TJ=25 C
Pulse Width = 300us
1% DULY Cycle
0.4
0.2
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF PEAK REVERE VOLTAGE,%
Fig.4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER ELEMENT
Fig.3 - TYPICAL REVERSE CHARACTERISTICS
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Fig.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
4
2
10
NO. OF CYCLES AT 60Hz
O
TEMPERATURE, C
10
6
2
2
REV.02 20120305
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