DATA SHEET GBJ10005 THRU GBJ1010 SEMICONDUCTOR 10A GLASS PASSIVATED BRIDGE RECTIFIER FEATURES GBJ •Glass Passivated Die Construction Dim Min Max A 29.70 30.30 L B 19.70 20.30 M C 17.00 18.00 D 3.80 4.20 E 7.30 7.70 G 9.80 10.20 H 2.00 2.40 I 0.90 1.10 J 2.30 2.70 •High Case Dielectric Strength of 1500VRMS •Low Reverse Leakage Current •Surge Overload Rating to 170A Peak A K •Ideal for Printed Circuit Board Applications •Plastic Material - UL Flammability Classification 94V-0 _ •UL Listed Under Recognized Component J Index, File Number E94661 •High temperature soldering : 260OC / 10 seconds at terminals •Pb free product at available : 99% Sn above meet RoHS B S N P D H C R I environment substance directive request MECHANICAL DATA G •Case: Molded Plastic E E •Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 •Polarity: Molded on Body 3.0 X 45° K L 4.40 4.80 M 3.40 3.80 N 3.10 3.40 P 2.50 2.90 R 0.60 0.80 S 10.80 11.20 All Dimensions in mm •Mounting: Through Hole for #6 Screw •Mounting Torque: 5.0 in-lbs Maximum •Weight: 6.6 grams (approx.) •Marking: Type Number Maximum Ratings and Electrical Characteristics @ TA = 25_C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Characteristic Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Average Forward Rectified Output Current @ TC= 100℃ GBJ GBJ GBJ GBJ GBJ GBJ GBJ 10005 1001 1002 1004 1006 1008 1010 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Unit IO 10 A IFSM 170 A VFM 1.05 V Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF = 5.0A Peak Reverse Current @TC = 25℃ at Rated DC Blocking Voltage @ TC = 125℃ IR 10 500 μA I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 120 Typical Junction Capacitance per Element (Note 2) Cj 55 pF R_JC 1.4 ℃/W Tj, TSTG -55 to +150 Typical Thermal Resistance, Junction to Case (Note 3) Operating and Storage Temperature Range A2s ℃ Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS 10 FORWARD SURGE CURRENT, AMPERES pk (HALF SINE-WAVE) AVERAGE FORWARD CURRENT AMPERES GBJ10005 THRU GBJ1010 HEAT-SINK MOUNTING, TC (4X4X0.15) INCH COPPER PLATE 8 6 4 60Hz RESISTIVE OR INDUCTIVE LOAD MOUNTED ON 0.5X0.5 INCH COPPER PC BOARD, TA 0.5"(12.7mm) LEAD LENGTH 2 0 0 50 100 150 200 160 120 80 40 0 1 Fig.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT INSTANTANEOUS FORWARD CURRENT, AMPERES REVERSE CURRENT,uA 10 3 O 10 T J =150 C 10 1 10 0 O T J =25 C 10 10 -1 -2 0 10 20 30 40 50 60 70 80 90 100 110 40 60 100 100 40 20 10 4.0 2.0 1.0 O TJ=25 C Pulse Width = 300us 1% DULY Cycle 0.4 0.2 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF PEAK REVERE VOLTAGE,% Fig.4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER ELEMENT Fig.3 - TYPICAL REVERSE CHARACTERISTICS http://www.yeashin.com 20 Fig.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 4 2 10 NO. OF CYCLES AT 60Hz O TEMPERATURE, C 10 6 2 2 REV.02 20120305